JP5455299B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5455299B2
JP5455299B2 JP2007290447A JP2007290447A JP5455299B2 JP 5455299 B2 JP5455299 B2 JP 5455299B2 JP 2007290447 A JP2007290447 A JP 2007290447A JP 2007290447 A JP2007290447 A JP 2007290447A JP 5455299 B2 JP5455299 B2 JP 5455299B2
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layer
substrate
semiconductor
bonding
release layer
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JP2009117688A5 (enExample
JP2009117688A (ja
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健吾 秋元
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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JP2007290447A 2007-11-08 2007-11-08 半導体装置の作製方法 Expired - Fee Related JP5455299B2 (ja)

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JP2007290447A JP5455299B2 (ja) 2007-11-08 2007-11-08 半導体装置の作製方法

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JP2007290447A JP5455299B2 (ja) 2007-11-08 2007-11-08 半導体装置の作製方法

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JP2009117688A JP2009117688A (ja) 2009-05-28
JP2009117688A5 JP2009117688A5 (enExample) 2010-12-09
JP5455299B2 true JP5455299B2 (ja) 2014-03-26

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101944477B (zh) * 2009-07-03 2012-06-20 清华大学 柔性半导体器件的制造方法
KR101845480B1 (ko) * 2010-06-25 2018-04-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US9324449B2 (en) 2012-03-28 2016-04-26 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, signal processing unit having the driver circuit, method for manufacturing the signal processing unit, and display device
KR102309244B1 (ko) 2013-02-20 2021-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2015087192A1 (en) 2013-12-12 2015-06-18 Semiconductor Energy Laboratory Co., Ltd. Peeling method and peeling apparatus
TWI695525B (zh) 2014-07-25 2020-06-01 日商半導體能源研究所股份有限公司 剝離方法、發光裝置、模組以及電子裝置
CN105304816B (zh) * 2015-11-18 2017-11-10 上海大学 柔性基底剥离方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4746262B2 (ja) * 2003-09-17 2011-08-10 Ｏｋｉセミコンダクタ株式会社 半導体装置の製造方法

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