JP5448945B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP5448945B2
JP5448945B2 JP2010054744A JP2010054744A JP5448945B2 JP 5448945 B2 JP5448945 B2 JP 5448945B2 JP 2010054744 A JP2010054744 A JP 2010054744A JP 2010054744 A JP2010054744 A JP 2010054744A JP 5448945 B2 JP5448945 B2 JP 5448945B2
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gas
gas supply
electric field
transmission window
plasma processing
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Japanese (ja)
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JP2011187902A (ja
JP2011187902A5 (https=
Inventor
一幸 廣實
良司 西尾
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2010054744A 2010-03-11 2010-03-11 プラズマ処理装置 Active JP5448945B2 (ja)

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JP2010054744A JP5448945B2 (ja) 2010-03-11 2010-03-11 プラズマ処理装置

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JP2010054744A JP5448945B2 (ja) 2010-03-11 2010-03-11 プラズマ処理装置

Publications (3)

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JP2011187902A JP2011187902A (ja) 2011-09-22
JP2011187902A5 JP2011187902A5 (https=) 2013-03-28
JP5448945B2 true JP5448945B2 (ja) 2014-03-19

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Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3372244B2 (ja) * 1994-12-05 2003-01-27 東京エレクトロン株式会社 プラズマ処理装置
JP3935642B2 (ja) * 1999-06-30 2007-06-27 松下電器産業株式会社 プラズマ処理装置及び方法
JP4672113B2 (ja) * 2000-07-07 2011-04-20 東京エレクトロン株式会社 誘導結合プラズマ処理装置
JP3935850B2 (ja) * 2003-01-31 2007-06-27 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP4115337B2 (ja) * 2003-05-30 2008-07-09 俊夫 後藤 プラズマ処理装置
JP4382505B2 (ja) * 2004-01-22 2009-12-16 パナソニック株式会社 プラズマエッチング装置の誘電板の製造方法
JP2007012734A (ja) * 2005-06-29 2007-01-18 Matsushita Electric Ind Co Ltd プラズマエッチング装置及びプラズマエッチング方法

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JP2011187902A (ja) 2011-09-22

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