JP5444233B2 - パターン基板の洗浄を最適化する装置および方法 - Google Patents

パターン基板の洗浄を最適化する装置および方法 Download PDF

Info

Publication number
JP5444233B2
JP5444233B2 JP2010529950A JP2010529950A JP5444233B2 JP 5444233 B2 JP5444233 B2 JP 5444233B2 JP 2010529950 A JP2010529950 A JP 2010529950A JP 2010529950 A JP2010529950 A JP 2010529950A JP 5444233 B2 JP5444233 B2 JP 5444233B2
Authority
JP
Japan
Prior art keywords
cleaning
wafer
cleaning head
pattern
cleaning material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010529950A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011501434A5 (https=
JP2011501434A (ja
Inventor
デラリオス・ジョン・エム．
フリーア・エリック・エム．
ラヴキン・マイケル
マークス・ジェフリー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of JP2011501434A publication Critical patent/JP2011501434A/ja
Publication of JP2011501434A5 publication Critical patent/JP2011501434A5/ja
Application granted granted Critical
Publication of JP5444233B2 publication Critical patent/JP5444233B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
JP2010529950A 2007-10-18 2008-10-15 パターン基板の洗浄を最適化する装置および方法 Expired - Fee Related JP5444233B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US98106007P 2007-10-18 2007-10-18
US60/981,060 2007-10-18
PCT/US2008/011830 WO2009051763A2 (en) 2007-10-18 2008-10-15 Apparatus and methods for optimizing cleaning of patterned substrates

Publications (3)

Publication Number Publication Date
JP2011501434A JP2011501434A (ja) 2011-01-06
JP2011501434A5 JP2011501434A5 (https=) 2011-12-01
JP5444233B2 true JP5444233B2 (ja) 2014-03-19

Family

ID=40562222

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010529950A Expired - Fee Related JP5444233B2 (ja) 2007-10-18 2008-10-15 パターン基板の洗浄を最適化する装置および方法

Country Status (6)

Country Link
US (1) US20090101166A1 (https=)
JP (1) JP5444233B2 (https=)
KR (1) KR20100076032A (https=)
CN (1) CN101828252B (https=)
TW (1) TWI443721B (https=)
WO (1) WO2009051763A2 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8105997B2 (en) * 2008-11-07 2012-01-31 Lam Research Corporation Composition and application of a two-phase contaminant removal medium
CN111370298A (zh) * 2020-04-16 2020-07-03 上海华虹宏力半导体制造有限公司 半导体衬底清洗方法及调整方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2956494A (en) * 1956-01-13 1960-10-18 Kelvin & Hughes Ltd Application of liquid to surfaces
JP3511442B2 (ja) * 1996-12-18 2004-03-29 忠弘 大見 洗浄やエッチング、現像、剥離等を含むウエット処理に用いる省液型の液体供給ノズル、省液型の液体供給ノズル装置及びウエット処理装置
JPH10294261A (ja) * 1997-04-18 1998-11-04 Sony Corp レジスト塗布装置
US5870793A (en) * 1997-05-02 1999-02-16 Integrated Process Equipment Corp. Brush for scrubbing semiconductor wafers
US7389783B2 (en) * 2002-09-30 2008-06-24 Lam Research Corporation Proximity meniscus manifold
US8236382B2 (en) * 2002-09-30 2012-08-07 Lam Research Corporation Proximity substrate preparation sequence, and method, apparatus, and system for implementing the same
US7392815B2 (en) * 2003-03-31 2008-07-01 Lam Research Corporation Chamber for wafer cleaning and method for making the same
US7799141B2 (en) * 2003-06-27 2010-09-21 Lam Research Corporation Method and system for using a two-phases substrate cleaning compound
US8522801B2 (en) * 2003-06-27 2013-09-03 Lam Research Corporation Method and apparatus for cleaning a semiconductor substrate
US20050126605A1 (en) * 2003-12-15 2005-06-16 Coreflow Scientific Solutions Ltd. Apparatus and method for cleaning surfaces
US8522799B2 (en) * 2005-12-30 2013-09-03 Lam Research Corporation Apparatus and system for cleaning a substrate

Also Published As

Publication number Publication date
KR20100076032A (ko) 2010-07-05
TW200929343A (en) 2009-07-01
WO2009051763A3 (en) 2009-06-04
WO2009051763A2 (en) 2009-04-23
CN101828252B (zh) 2012-11-14
JP2011501434A (ja) 2011-01-06
US20090101166A1 (en) 2009-04-23
TWI443721B (zh) 2014-07-01
CN101828252A (zh) 2010-09-08

Similar Documents

Publication Publication Date Title
CN101351282B (zh) 从基片去除污染的方法和设备
CN100517586C (zh) 处理衬底的方法和设备
US8555903B2 (en) Method and apparatus for removing contamination from substrate
US8716210B2 (en) Material for cleaning a substrate
US7799141B2 (en) Method and system for using a two-phases substrate cleaning compound
US10512946B2 (en) Gigasonic cleaning techniques
JP5444233B2 (ja) パターン基板の洗浄を最適化する装置および方法
CN101711423A (zh) 通过向清洁溶液施加周期性的切变应力清洁半导体晶片表面的方法
US20110195579A1 (en) Scribe-line draining during wet-bench etch and clean processes

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111017

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20111017

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120730

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120807

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20121107

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20121114

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121206

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130312

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130612

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130820

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131118

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20131210

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20131220

R150 Certificate of patent or registration of utility model

Ref document number: 5444233

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees