JP5442554B2 - 発光ダイオードの製造方法 - Google Patents
発光ダイオードの製造方法 Download PDFInfo
- Publication number
- JP5442554B2 JP5442554B2 JP2010165195A JP2010165195A JP5442554B2 JP 5442554 B2 JP5442554 B2 JP 5442554B2 JP 2010165195 A JP2010165195 A JP 2010165195A JP 2010165195 A JP2010165195 A JP 2010165195A JP 5442554 B2 JP5442554 B2 JP 5442554B2
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- JP
- Japan
- Prior art keywords
- emitting diode
- light
- light emitting
- substrate
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- Led Device Packages (AREA)
Description
Claims (9)
- 発光ダイオード素子が実装され、前記発光ダイオード素子の少なくとも光を取り出す側の面が導電性を有する基板を用意するステップと、
前記基板の前記発光ダイオード素子が実装された面に対向する対向電極を、少なくとも未硬化樹脂または樹脂前駆体及び蛍光体粒子を含む液体を挟んで配置するステップと、
前記光を取り出す側の面及び前記対向電極間に電圧を印加し、前記光を取り出す側の面上に前記蛍光体粒子を含む硬化樹脂層を形成するステップと、
を有する発光ダイオードの製造方法。 - 導電性を有する素子基板上に複数の半導体層が積層された構造の前記発光ダイオード素子を、前記素子基板が光を取り出す側となるよう配置することにより、前記光を取り出す側の面が導電性を有する請求項1記載の発光ダイオードの製造方法。
- 素子基板上に複数の半導体層が積層された素子を、前記素子基板が光を取り出す側となるよう基板に実装した後、前記素子基板を剥離することにより、前記発光ダイオード素子の前記光を取り出す側の面が導電性を有する請求項1記載の発光ダイオードの製造方法。
- 素子基板上に複数の半導体層が積層された素子を、前記素子基板が光を取り出す側となるよう基板に実装した後、前記素子基板上に導電性の被覆層を形成することにより、前記発光ダイオード素子の前記光を取り出す側の面が導電性を有する請求項1記載の発光ダイオードの製造方法。
- 素子基板上に複数の半導体層が積層された素子を、前記複数の半導体層が光を取り出す側となるよう基板に実装することにより、前記発光ダイオード素子の前記光を取り出す側の面が導電性を有する請求項1記載の発光ダイオードの製造方法。
- 前記硬化樹脂層は、前記複数の半導体層に接続されるボンディングワイヤーの表面にも形成される請求項5記載の発光ダイオードの製造方法。
- 前記液体は、さらに分散材を含む請求項1乃至6のいずれかに記載の発光ダイオードの製造方法。
- 前記硬化樹脂層を形成するステップにおいて、前記基板の光を取り出す側の面の少なくとも一部分がマスクされる請求項1乃至7のいずれかに記載の発光ダイオードの製造方法。
- 前記基板の光を取り出す側の面には、前記発光ダイオード素子と電気的に接続される導電層が部分的に形成される請求項1乃至7のいずれかに記載の発光ダイオードの製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010165195A JP5442554B2 (ja) | 2010-07-22 | 2010-07-22 | 発光ダイオードの製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010165195A JP5442554B2 (ja) | 2010-07-22 | 2010-07-22 | 発光ダイオードの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012028525A JP2012028525A (ja) | 2012-02-09 |
JP5442554B2 true JP5442554B2 (ja) | 2014-03-12 |
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JP2010165195A Expired - Fee Related JP5442554B2 (ja) | 2010-07-22 | 2010-07-22 | 発光ダイオードの製造方法 |
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JP (1) | JP5442554B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110176438A (zh) * | 2019-06-11 | 2019-08-27 | 厦门市三安光电科技有限公司 | 发光二极管 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6287204B2 (ja) * | 2013-12-27 | 2018-03-07 | 日亜化学工業株式会社 | 半導体光源装置 |
DE102015214360A1 (de) * | 2015-04-29 | 2016-11-03 | Tridonic Jennersdorf Gmbh | Verfahren zum Herstellen eines LED-Moduls |
TW201725763A (zh) * | 2015-06-26 | 2017-07-16 | 億光電子工業股份有限公司 | 發光裝置及其製造方法 |
JP6597135B2 (ja) * | 2015-09-30 | 2019-10-30 | 日亜化学工業株式会社 | 発光装置 |
-
2010
- 2010-07-22 JP JP2010165195A patent/JP5442554B2/ja not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110176438A (zh) * | 2019-06-11 | 2019-08-27 | 厦门市三安光电科技有限公司 | 发光二极管 |
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JP2012028525A (ja) | 2012-02-09 |
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