JP5438104B2 - 前面および後面に形成された導電層を有するフロントコンタクト型太陽電池 - Google Patents

前面および後面に形成された導電層を有するフロントコンタクト型太陽電池 Download PDF

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JP5438104B2
JP5438104B2 JP2011516531A JP2011516531A JP5438104B2 JP 5438104 B2 JP5438104 B2 JP 5438104B2 JP 2011516531 A JP2011516531 A JP 2011516531A JP 2011516531 A JP2011516531 A JP 2011516531A JP 5438104 B2 JP5438104 B2 JP 5438104B2
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solar cell
doped polysilicon
substrate
polysilicon layer
layer
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JP2011527112A (ja
JP2011527112A5 (enExample
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カズンズ、ピーター、ジョン
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サンパワー コーポレイション
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H10F77/1642—Polycrystalline semiconductors including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/215—Geometries of grid contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/48—Back surface reflectors [BSR]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
JP2011516531A 2008-07-01 2009-06-23 前面および後面に形成された導電層を有するフロントコンタクト型太陽電池 Active JP5438104B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/166,266 2008-07-01
US12/166,266 US8207444B2 (en) 2008-07-01 2008-07-01 Front contact solar cell with formed electrically conducting layers on the front side and backside
PCT/US2009/048295 WO2010002635A1 (en) 2008-07-01 2009-06-23 Front contact solar cell with formed electrically conducting layers on the front side and backside

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013257321A Division JP5763159B2 (ja) 2008-07-01 2013-12-12 太陽電池

Publications (3)

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JP2011527112A JP2011527112A (ja) 2011-10-20
JP2011527112A5 JP2011527112A5 (enExample) 2012-06-14
JP5438104B2 true JP5438104B2 (ja) 2014-03-12

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JP2011516531A Active JP5438104B2 (ja) 2008-07-01 2009-06-23 前面および後面に形成された導電層を有するフロントコンタクト型太陽電池
JP2013257321A Active JP5763159B2 (ja) 2008-07-01 2013-12-12 太陽電池
JP2015117741A Active JP6111290B2 (ja) 2008-07-01 2015-06-10 太陽電池

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JP2013257321A Active JP5763159B2 (ja) 2008-07-01 2013-12-12 太陽電池
JP2015117741A Active JP6111290B2 (ja) 2008-07-01 2015-06-10 太陽電池

Country Status (7)

Country Link
US (5) US8207444B2 (enExample)
EP (2) EP2311102B1 (enExample)
JP (3) JP5438104B2 (enExample)
KR (1) KR101481858B1 (enExample)
CN (2) CN202487587U (enExample)
ES (1) ES2923117T3 (enExample)
WO (1) WO2010002635A1 (enExample)

Families Citing this family (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
JP5442453B2 (ja) * 2007-02-15 2014-03-12 マサチューセッツ インスティテュート オブ テクノロジー 凹凸化された表面を備えた太陽電池
US8222516B2 (en) * 2008-02-20 2012-07-17 Sunpower Corporation Front contact solar cell with formed emitter
US12074240B2 (en) * 2008-06-12 2024-08-27 Maxeon Solar Pte. Ltd. Backside contact solar cells with separated polysilicon doped regions
US7851698B2 (en) * 2008-06-12 2010-12-14 Sunpower Corporation Trench process and structure for backside contact solar cells with polysilicon doped regions
US8207444B2 (en) 2008-07-01 2012-06-26 Sunpower Corporation Front contact solar cell with formed electrically conducting layers on the front side and backside
US8183081B2 (en) * 2008-07-16 2012-05-22 Applied Materials, Inc. Hybrid heterojunction solar cell fabrication using a metal layer mask
EP2359410A4 (en) 2008-12-10 2014-09-24 Applied Materials Inc IMPROVED VISIBILITY SYSTEM FOR ALIGNMENT OF SCREEN PRINT PATTERNS
US12168748B2 (en) 2009-04-24 2024-12-17 Terralithium Llc Treated geothermal brine compositions with reduced concentration of silica, iron and lithium
US9034294B1 (en) 2009-04-24 2015-05-19 Simbol, Inc. Preparation of lithium carbonate from lithium chloride containing brines
US10190030B2 (en) 2009-04-24 2019-01-29 Alger Alternative Energy, Llc Treated geothermal brine compositions with reduced concentrations of silica, iron and lithium
US8741256B1 (en) 2009-04-24 2014-06-03 Simbol Inc. Preparation of lithium carbonate from lithium chloride containing brines
US8637428B1 (en) 2009-12-18 2014-01-28 Simbol Inc. Lithium extraction composition and method of preparation thereof
US9051827B1 (en) 2009-09-02 2015-06-09 Simbol Mining Corporation Selective removal of silica from silica containing brines
US10683563B2 (en) 2009-06-24 2020-06-16 Terralithium Llc Treated geothermal brine compositions with reduced concentrations of silica, iron and manganese
US10935006B2 (en) 2009-06-24 2021-03-02 Terralithium Llc Process for producing geothermal power, selective removal of silica and iron from brines, and improved injectivity of treated brines
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
CA3172956A1 (en) 2010-02-17 2011-08-25 Terralithium Llc Method of producing high purity lithium carbonate
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
DE102010028189B4 (de) * 2010-04-26 2018-09-27 Solarworld Industries Gmbh Solarzelle
US20120111396A1 (en) * 2010-05-04 2012-05-10 Sionyx, Inc. Photovoltaic Devices and Associated Methods
FR2959872B1 (fr) * 2010-05-05 2013-03-15 Commissariat Energie Atomique Cellule photovoltaique a face arriere structuree et procede de fabrication associe.
US20120146172A1 (en) 2010-06-18 2012-06-14 Sionyx, Inc. High Speed Photosensitive Devices and Associated Methods
DE102010054370A1 (de) * 2010-12-13 2012-06-14 Centrotherm Photovoltaics Ag Verfahren zur Herstellung von Siliziumsolarzellen mit vorderseitiger Textur und glatter Rückseitenoberfläche
JP5541139B2 (ja) * 2010-12-16 2014-07-09 日立化成株式会社 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池セルの製造方法
JP5541138B2 (ja) * 2010-12-16 2014-07-09 日立化成株式会社 ｐ型拡散層形成組成物、ｐ型拡散層の製造方法及び太陽電池セルの製造方法
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
US20130016203A1 (en) 2011-07-13 2013-01-17 Saylor Stephen D Biometric imaging devices and associated methods
KR101223033B1 (ko) 2011-07-29 2013-01-17 엘지전자 주식회사 태양 전지
US20130125968A1 (en) * 2011-11-18 2013-05-23 Sunpreme, Ltd. Low-cost solar cell metallization over tco and methods of their fabrication
US9166074B2 (en) * 2011-12-09 2015-10-20 The Board Of Trustees Of The Leland Stanford Junior University Metal silicide nanowire arrays for anti-reflective electrodes in photovoltaics
KR101860919B1 (ko) * 2011-12-16 2018-06-29 엘지전자 주식회사 태양 전지 및 이의 제조 방법
WO2013105603A1 (ja) * 2012-01-10 2013-07-18 日立化成株式会社 バリア層形成用組成物、バリア層、太陽電池用基板の製造方法及び太陽電池素子の製造方法
KR101329855B1 (ko) * 2012-01-31 2013-11-14 현대중공업 주식회사 양면수광형 태양전지의 제조방법
DE102012204346A1 (de) * 2012-03-19 2013-09-19 Gebr. Schmid Gmbh Verfahren zur Herstellung eines beidseitig unterschiedlich dotierten Halbleiterwafers
US9064764B2 (en) 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
JP5546616B2 (ja) * 2012-05-14 2014-07-09 セリーボ， インコーポレイテッド トンネル酸化物を有する後面接合太陽電池
MY184055A (en) * 2012-05-29 2021-03-17 Solexel Inc Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells
US20140130854A1 (en) * 2012-11-12 2014-05-15 Samsung Sdi Co., Ltd. Photoelectric device and the manufacturing method thereof
US9312406B2 (en) 2012-12-19 2016-04-12 Sunpower Corporation Hybrid emitter all back contact solar cell
JP6466346B2 (ja) 2013-02-15 2019-02-06 サイオニクス、エルエルシー アンチブルーミング特性を有するハイダイナミックレンジｃｍｏｓ画像センサおよび関連づけられた方法
WO2014151093A1 (en) 2013-03-15 2014-09-25 Sionyx, Inc. Three dimensional imaging utilizing stacked imager devices and associated methods
EP4092757A1 (en) * 2013-04-03 2022-11-23 Lg Electronics Inc. Method for fabricating a solar cell
CN103413859B (zh) * 2013-06-27 2016-03-16 友达光电股份有限公司 太阳能电池与其制作方法
US9209345B2 (en) 2013-06-29 2015-12-08 Sionyx, Inc. Shallow trench textured regions and associated methods
US9577134B2 (en) * 2013-12-09 2017-02-21 Sunpower Corporation Solar cell emitter region fabrication using self-aligned implant and cap
WO2015095820A1 (en) * 2013-12-20 2015-06-25 Sunpower Corporation Single-step metal bond and contact formation for solar cells
US9246046B1 (en) * 2014-09-26 2016-01-26 Sunpower Corporation Etching processes for solar cell fabrication
DE102014220121A1 (de) * 2014-10-02 2016-04-07 Gebr. Schmid Gmbh Bifaciale Solarzelle und Verfahren zur Herstellung
US9520507B2 (en) * 2014-12-22 2016-12-13 Sunpower Corporation Solar cells with improved lifetime, passivation and/or efficiency
US9882070B2 (en) * 2016-06-10 2018-01-30 Aalto University Foundation Photodetector structures and manufacturing the same
USD822890S1 (en) 2016-09-07 2018-07-10 Felxtronics Ap, Llc Lighting apparatus
NL2017872B1 (en) 2016-11-25 2018-06-08 Stichting Energieonderzoek Centrum Nederland Photovoltaic cell with passivating contact
US10775030B2 (en) 2017-05-05 2020-09-15 Flex Ltd. Light fixture device including rotatable light modules
US10604414B2 (en) 2017-06-15 2020-03-31 Energysource Minerals Llc System and process for recovery of lithium from a geothermal brine
USD872319S1 (en) 2017-08-09 2020-01-07 Flex Ltd. Lighting module LED light board
USD846793S1 (en) 2017-08-09 2019-04-23 Flex Ltd. Lighting module locking mechanism
USD832494S1 (en) 2017-08-09 2018-10-30 Flex Ltd. Lighting module heatsink
USD833061S1 (en) 2017-08-09 2018-11-06 Flex Ltd. Lighting module locking endcap
USD877964S1 (en) 2017-08-09 2020-03-10 Flex Ltd. Lighting module
USD862777S1 (en) 2017-08-09 2019-10-08 Flex Ltd. Lighting module wide distribution lens
USD832495S1 (en) 2017-08-18 2018-10-30 Flex Ltd. Lighting module locking mechanism
USD862778S1 (en) 2017-08-22 2019-10-08 Flex Ltd Lighting module lens
USD888323S1 (en) 2017-09-07 2020-06-23 Flex Ltd Lighting module wire guard
JP7206660B2 (ja) * 2018-07-17 2023-01-18 セイコーエプソン株式会社 光電変換素子、光電変換モジュールおよび電子機器
JP2020167243A (ja) 2019-03-29 2020-10-08 パナソニック株式会社 太陽電池セル集合体、及び、太陽電池セルの製造方法
DE102019114498A1 (de) * 2019-05-29 2020-12-03 Hanwha Q Cells Gmbh Wafer-Solarzelle, Solarmodul und Verfahren zur Herstellung der Wafer-Solarzelle
US20230161243A1 (en) 2021-11-09 2023-05-25 Sumitomo Chemical Company, Limited Salt, acid generator, resin, resist composition and method for producing resist pattern
TW202337882A (zh) 2022-03-24 2023-10-01 日商住友化學股份有限公司 鹽、酸產生劑、樹脂、抗蝕劑組成物及抗蝕劑圖案的製造方法
CN117637892B (zh) * 2024-01-26 2024-04-30 隆基绿能科技股份有限公司 一种背接触太阳能电池和光伏组件

Family Cites Families (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3961997A (en) * 1975-05-12 1976-06-08 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Fabrication of polycrystalline solar cells on low-cost substrates
US4427839A (en) 1981-11-09 1984-01-24 General Electric Company Faceted low absorptance solar cell
JPS61121425A (ja) * 1984-11-19 1986-06-09 Nippon Telegr & Teleph Corp <Ntt> シリコンへの水素添加方法
US4665277A (en) 1986-03-11 1987-05-12 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Floating emitter solar cell
US4927770A (en) * 1988-11-14 1990-05-22 Electric Power Research Inst. Corp. Of District Of Columbia Method of fabricating back surface point contact solar cells
US5217539A (en) * 1991-09-05 1993-06-08 The Boeing Company III-V solar cells and doping processes
US5479018A (en) 1989-05-08 1995-12-26 Westinghouse Electric Corp. Back surface illuminated infrared detector
US5053083A (en) * 1989-05-08 1991-10-01 The Board Of Trustees Of The Leland Stanford Junior University Bilevel contact solar cells
US5030295A (en) * 1990-02-12 1991-07-09 Electric Power Research Institut Radiation resistant passivation of silicon solar cells
US5057439A (en) * 1990-02-12 1991-10-15 Electric Power Research Institute Method of fabricating polysilicon emitters for solar cells
US5164019A (en) * 1991-07-31 1992-11-17 Sunpower Corporation Monolithic series-connected solar cells having improved cell isolation and method of making same
US5356488A (en) 1991-12-27 1994-10-18 Rudolf Hezel Solar cell and method for its manufacture
US5266125A (en) 1992-05-12 1993-11-30 Astropower, Inc. Interconnected silicon film solar cell array
JP3203076B2 (ja) * 1992-11-30 2001-08-27 シャープ株式会社 宇宙用シリコン太陽電池
US5360990A (en) * 1993-03-29 1994-11-01 Sunpower Corporation P/N junction device having porous emitter
US5369291A (en) * 1993-03-29 1994-11-29 Sunpower Corporation Voltage controlled thyristor
JPH0786271A (ja) * 1993-09-17 1995-03-31 Fujitsu Ltd シリコン酸化膜の作製方法
JP2661676B2 (ja) * 1994-09-06 1997-10-08 株式会社日立製作所 太陽電池
DE19522539C2 (de) * 1995-06-21 1997-06-12 Fraunhofer Ges Forschung Solarzelle mit einem, eine Oberflächentextur aufweisenden Emitter sowie Verfahren zur Herstellung derselben
US5641362A (en) * 1995-11-22 1997-06-24 Ebara Solar, Inc. Structure and fabrication process for an aluminum alloy junction self-aligned back contact silicon solar cell
US5620904A (en) * 1996-03-15 1997-04-15 Evergreen Solar, Inc. Methods for forming wraparound electrical contacts on solar cells
US6552414B1 (en) 1996-12-24 2003-04-22 Imec Vzw Semiconductor device with selectively diffused regions
US6262359B1 (en) * 1999-03-17 2001-07-17 Ebara Solar, Inc. Aluminum alloy back junction solar cell and a process for fabrication thereof
US6632730B1 (en) * 1999-11-23 2003-10-14 Ebara Solar, Inc. Method for self-doping contacts to a semiconductor
US6274402B1 (en) * 1999-12-30 2001-08-14 Sunpower Corporation Method of fabricating a silicon solar cell
US6423568B1 (en) * 1999-12-30 2002-07-23 Sunpower Corporation Method of fabricating a silicon solar cell
US6337283B1 (en) * 1999-12-30 2002-01-08 Sunpower Corporation Method of fabricating a silicon solar cell
US6387726B1 (en) * 1999-12-30 2002-05-14 Sunpower Corporation Method of fabricating a silicon solar cell
JP3732993B2 (ja) * 2000-02-09 2006-01-11 シャープ株式会社 太陽電池セルおよびその製造方法
US6313395B1 (en) * 2000-04-24 2001-11-06 Sunpower Corporation Interconnect structure for solar cells and method of making same
US6333457B1 (en) * 2000-08-29 2001-12-25 Sunpower Corporation Edge passivated silicon solar/photo cell and method of manufacture
DE10042733A1 (de) * 2000-08-31 2002-03-28 Inst Physikalische Hochtech Ev Multikristalline laserkristallisierte Silicium-Dünnschicht-Solarzelle auf transparentem Substrat
JP3490964B2 (ja) * 2000-09-05 2004-01-26 三洋電機株式会社 光起電力装置
DE10045249A1 (de) * 2000-09-13 2002-04-04 Siemens Ag Photovoltaisches Bauelement und Verfahren zum Herstellen des Bauelements
KR100366349B1 (ko) * 2001-01-03 2002-12-31 삼성에스디아이 주식회사 태양 전지 및 그의 제조 방법
CA2370731A1 (en) * 2001-02-07 2002-08-07 Ebara Corporation Solar cell and method of manufacturing same
US6524880B2 (en) 2001-04-23 2003-02-25 Samsung Sdi Co., Ltd. Solar cell and method for fabricating the same
US7217883B2 (en) * 2001-11-26 2007-05-15 Shell Solar Gmbh Manufacturing a solar cell with backside contacts
AU2003272986A1 (en) * 2002-10-15 2004-05-04 Sharp Kabushiki Kaisha Solar cell and solar cell module using same
JP2004140087A (ja) * 2002-10-16 2004-05-13 Canon Inc 太陽電池用多結晶シリコン基板とその製造法、及びこの基板を用いた太陽電池の製造法
DK1421968T3 (da) 2002-11-19 2010-03-01 Pajunk Gmbh & Co Kg Besitzverwaltung Indretning til fiksering af et kateter og et filter
US7388147B2 (en) * 2003-04-10 2008-06-17 Sunpower Corporation Metal contact structure for solar cell and method of manufacture
US6998288B1 (en) * 2003-10-03 2006-02-14 Sunpower Corporation Use of doped silicon dioxide in the fabrication of solar cells
WO2005083799A1 (en) 2004-02-24 2005-09-09 Bp Corporation North America Inc Process for manufacturing photovoltaic cells
US20080000519A1 (en) * 2004-07-29 2008-01-03 Kyocera Corporation Solar Cell Device and Method for Manufacturing the Same
US7838868B2 (en) 2005-01-20 2010-11-23 Nanosolar, Inc. Optoelectronic architecture having compound conducting substrate
US20060130891A1 (en) 2004-10-29 2006-06-22 Carlson David E Back-contact photovoltaic cells
TW200635090A (en) * 2004-11-10 2006-10-01 Daystar Technologies Inc Process and photovoltaic device using an alkali-containing layer
EP1693903B1 (en) * 2005-02-18 2011-05-18 Clean Venture 21 Corporation Array of spherical solar cells and its method of fabrication
US7494607B2 (en) * 2005-04-14 2009-02-24 E.I. Du Pont De Nemours And Company Electroconductive thick film composition(s), electrode(s), and semiconductor device(s) formed therefrom
US7375378B2 (en) * 2005-05-12 2008-05-20 General Electric Company Surface passivated photovoltaic devices
US20070023081A1 (en) * 2005-07-28 2007-02-01 General Electric Company Compositionally-graded photovoltaic device and fabrication method, and related articles
US7468485B1 (en) * 2005-08-11 2008-12-23 Sunpower Corporation Back side contact solar cell with doped polysilicon regions
US7339728B2 (en) 2005-10-11 2008-03-04 Cardinal Cg Company Low-emissivity coatings having high visible transmission and low solar heat gain coefficient
DE602005026059D1 (de) * 2005-11-28 2011-03-03 Mitsubishi Electric Corp Solarbatteriezelle und verfahren zu ihrer herstellung
US7737357B2 (en) * 2006-05-04 2010-06-15 Sunpower Corporation Solar cell having doped semiconductor heterojunction contacts
US7928317B2 (en) * 2006-06-05 2011-04-19 Translucent, Inc. Thin film solar cell
KR100880946B1 (ko) * 2006-07-03 2009-02-04 엘지전자 주식회사 태양전지 및 그 제조방법
US8975172B2 (en) * 2006-09-27 2015-03-10 Kyocera Corporation Solar cell element and method for manufacturing solar cell element
US20080092944A1 (en) * 2006-10-16 2008-04-24 Leonid Rubin Semiconductor structure and process for forming ohmic connections to a semiconductor structure
US20080173347A1 (en) * 2007-01-23 2008-07-24 General Electric Company Method And Apparatus For A Semiconductor Structure
JP2007281530A (ja) * 2007-07-31 2007-10-25 Sanyo Electric Co Ltd 太陽電池モジュール
US20100275982A1 (en) * 2007-09-04 2010-11-04 Malcolm Abbott Group iv nanoparticle junctions and devices therefrom
US20090159111A1 (en) * 2007-12-21 2009-06-25 The Woodside Group Pte. Ltd Photovoltaic device having a textured metal silicide layer
US8222516B2 (en) 2008-02-20 2012-07-17 Sunpower Corporation Front contact solar cell with formed emitter
US8207444B2 (en) 2008-07-01 2012-06-26 Sunpower Corporation Front contact solar cell with formed electrically conducting layers on the front side and backside
US20110132444A1 (en) * 2010-01-08 2011-06-09 Meier Daniel L Solar cell including sputtered reflective layer and method of manufacture thereof

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