JP5437551B2 - 導電性高分子組成物及びこれを採用した有機光電素子 - Google Patents
導電性高分子組成物及びこれを採用した有機光電素子 Download PDFInfo
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- JP5437551B2 JP5437551B2 JP2006037233A JP2006037233A JP5437551B2 JP 5437551 B2 JP5437551 B2 JP 5437551B2 JP 2006037233 A JP2006037233 A JP 2006037233A JP 2006037233 A JP2006037233 A JP 2006037233A JP 5437551 B2 JP5437551 B2 JP 5437551B2
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- 125000002510 isobutoxy group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])O* 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 150000003854 isothiazoles Chemical class 0.000 description 1
- 150000002545 isoxazoles Chemical class 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N o-biphenylenemethane Natural products C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical compound C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 description 1
- 150000002916 oxazoles Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 125000004115 pentoxy group Chemical group [*]OC([H])([H])C([H])([H])C([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 229920003936 perfluorinated ionomer Polymers 0.000 description 1
- 150000005041 phenanthrolines Chemical class 0.000 description 1
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 1
- 125000000109 phenylethoxy group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])O* 0.000 description 1
- 125000000286 phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 125000002572 propoxy group Chemical group [*]OC([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- 150000003233 pyrroles Chemical class 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 150000003413 spiro compounds Chemical class 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000011593 sulfur Chemical group 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 125000001712 tetrahydronaphthyl group Chemical group C1(CCCC2=CC=CC=C12)* 0.000 description 1
- 150000004867 thiadiazoles Chemical class 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- 125000005580 triphenylene group Chemical group 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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Description
特に、バイエル株式会社(Bayer AG)で製造されてバイトロンP(Baytron−P)という製品名で市販されているPEDOT(ポリ(3,4−エチレンジオキシチオフェン))−PSS(ポリ(4−スチレンスルホナート))水溶液は、ITO(インジウムスズ酸化物)電極上にスピンコーティングして正孔注入層を形成しようとする目的として有機発光素子の製作時に広く用いられており、正孔注入物質であるPEDOT−PSSは下記の構造を有する。
本発明は、導電性高分子と、下記化学式1で表示されるイオノマーと、を含む導電性高分子組成物を提供する。
0<m≦10,000,000、
0≦n<10,000,000、
0≦a≦20、
0≦b≦20であり、
A、B、A’及びB’は、それぞれ独立してC、Si、Ge、Sn及びPbよりなる群から選択され、
R1、R2、R3、R4、R1’、R2’、R3’及びR4’は、それぞれ独立して水素原子、ハロゲン原子、ニトロ基、置換または非置換のアミノ基、置換または非置換のアミノカルボニル基、置換または非置換のカルボキシル基、シアノ基、置換または非置換のC1−C30のアルキル基、置換または非置換のC1−C30のヘテロアルキル基、置換または非置換のC1−C30のアルコキシ基、置換または非置換のC1−30のヘテロアルコキシ基、置換または非置換のC6−C30のアリール基、置換または非置換のC6−C30のアリールアルキル基、置換または非置換のC6−C30のアリールオキシ基、置換または非置換のC2−C30のヘテロアリール基、置換または非置換のC2−C30のヘテロアリールアルキル基、置換または非置換のC2−C30のヘテロアリールオキシ基、置換または非置換のC5−C30、好ましくはC5−C20のシクロアルキル基、置換または非置換のC2−C30のヘテロシクロアルキル基、置換または非置換のC1−C30のアルキルエステル基、置換または非置換のC1−C30のヘテロアルキルエステル基、置換または非置換のC6−C30のアリールエステル基及び置換または非置換のC2−C30のヘテロアリールエステル基よりなる群から選択され、但し、R1、R2、R3、及びR4のうち少なくとも一つ以上は、イオン基であるか、イオン基を含み、
X及びX’は、それぞれ独立して単純結合(single bond;単結合ないし一重結合ともいう)、O、S、置換または非置換のC1−C30のアルキレン基、置換または非置換のC1−C30のヘテロアルキレン基、置換または非置換のC6−C30のアリーレン基、置換または非置換のC6−C30のアリールアルキレン基、置換または非置換のC2−C30のヘテロアリーレン基、置換または非置換のC2−C30のヘテロアリールアルキレン基、置換または非置換のC5−C20のシクロアルキレン基、置換または非置換のC5−C30のヘテロシクロアルキレン基、置換または非置換のC6−30のアリールエステル基及び、置換または非置換のC2−C30のヘテロアリールエステル基よりなる群から選択され、
但し、nが0である場合、R1、R2、R3、及びR4のうち少なくとも一つ以上は、ハロゲン元素を含む疎水性官能基である。なお、本発明では、炭素数の範囲、例えば、炭素数1〜30であれば、C1−C30として表記するものとする。
下記化学式1で表示される第1イオノマーと、を含む導電性高分子組成物を提供する。
下記化学式14のイオノマーを(株)ダウケミカルから購買して混合溶媒(水:エタノール=4:6(重量比))に1.0wt%で溶解した。その後、PEDOTを既知の合成方法[Greonendaal et al.Advanced Materials,Vol.12,p481,2000]によって重合した。さらに具体的には、商業的に3、4−エチレンジオキシチオフェン(EDOT)を販売しているH.C.Starck社の商品名Baytron Mを購入して、化学的酸化重合法により前記溶液内で化学式14の溶質対比10%の重量比でEDOTを重合させて導電性高分子組成物を完成した。
下記化学式15のイオノマーを(株)デュポンから購買して混合溶媒(水:エタノール=4:6(重量比))に1.0wt%で溶解した。その後、(株)シグマアルドリッチから購入したポリアニリン(PANI)をショウノウスルホン酸(camphor sulfonic acid)でドーピングして導電性高分子を得た。次いで、前記1.0wt%で溶解された化学式15のイオノマーに対して重合されたPANIを重量比10:2で混合して所望の導電性高分子組成物を完成した。
1)イオノマーの合成
下記化学式16の化合物を次の通りに合成した。重量平均分子量230,000(数平均分子量140,000)を有するポリスチレンを(株)シグマアルドリッチから購入した。前記ポリスチレンのスルホン化は、スルホン化補助剤としてアセチルスルファートを使用して1,2−ジクロロエタン溶媒で50℃の温度で行われた。スルホナート高分子は、スチームストリッピングによって得られ、残っている溶媒を除去するために2日間60℃の真空オーブンで乾燥した。得られた高分子のスルホナートの含有量は、ポリスチレン主鎖の50モル%に該当する。
前記で合成したイオノマーを水に1.5wt%で溶解した。その後、前記1.5wt%で溶解された前記イオノマーの溶質の重量に対して実施例1と同じ方法でEDOTを重合させて重量比15:2で混合して所望の導電性高分子組成物を完成した。
コーニング15Ω/cm2(ITO電極の厚さ;1200Å)ITOガラス基板を50mm×50mm×0.7mmのサイズに切ってイソプロピルアルコールと純水中で各5分間超音波洗浄した後、30分間UV、オゾン洗浄して使用した。
正孔注入層形成物質としてBayer社のBatron P 4083であるPEDOT/PSSの水溶液を使用した点を除いては、前記実施例4と同じ方法で有機電界発光素子を製作した。この時、比較例1から製造された有機電界発光素子をサンプルBという。
前記サンプルA及びサンプルBの効率をSpectraScan PR650分光放射計を利用して測定した。
前記サンプルA及びサンプルBに対して寿命特性を評価した。寿命特性評価は、フォトダイオードを利用して経時的に輝度を測定することによって評価するが、初期発光輝度(initial luminance)が50%まで減少する時間として表される。
下記化学式17(いわゆる、NAFION)の構造を有し、5wt%で水とアルコール(2−プロパノール)の4.5:5.5(重量比)混合溶媒に溶解されているイオノマーを(株)シグマ−アルドリッチ社から購入した。その後、(株)スタルク(H.C.Starck)から購買した製品名Baytron P H(PEDOTとPSSとの1:2.5重量比の組成物)を購買して全固形分を水とエタノールとの混合溶媒に1.5wt%になるように混合物を製造した。5wt%で溶解されたNAFIONとBaytron P Hとを4:1、2:1、1:1の比率で調節して所望の導電性高分子組成物をそれぞれ製造した。
コーニング15Ω/cm2(ITO電極の厚さ;1200Å)ITOガラス基板を50mm×50mm×0.7mmのサイズに切ってイソプロピルアルコールと純水中で各5分間超音波洗浄した後、30分間UV、オゾン洗浄して使用した。
正孔注入層形成物質としてBayer社のBatron P 4083であるPEDOT/PSS(1/6の重量比)の水溶液を使用した点を除いては、前記実施例6と同じ方法で有機電界発光素子を製作した。この時、比較例2から製造された有機電界発光素子をサンプルFという。
正孔注入層形成物質としてBayer社のBatron PHであるPEDOT/PSS(1/2.5の重量比)の水溶液を使用した点を除いては、前記実施例6と同じ方法で有機電界発光素子を製作した。この時、比較例3から製造された有機電界発光素子をサンプルGという。
前記サンプルCないしGの効率を評価して図2にそれぞれ示した。効率評価は、SpectraScan PR650分光放射計を利用して測定した。
前記サンプルCないしGに対して寿命特性を評価して図3にそれぞれ示した。寿命特性評価は、フォトダイオードを利用して経時的に輝度を測定することによって評価するが、初期発光輝度が50%まで減少する時間として表される。
11 正孔注入層、
12 発光層、
13 正孔抑制層、
14 第2電極、
15 電子輸送層、
16 正孔輸送層。
Claims (17)
- 導電性高分子と、
下記化学式6、7、10および13よりなる群から選択された反復単位を含む第1イオノマーと、
を含む導電性高分子組成物:
- 前記導電性高分子の100重量部に対して第1イオノマーが100ないし5,000重量部であることを特徴とする請求項1に記載の導電性高分子組成物。
- 前記導電性高分子の100重量部に対して下記化学式1で表示される第2イオノマーを100ないし5,000重量部の範囲で1種以上さらに含み、前記第1イオノマーとこれら第2イオノマーのそれぞれが相異なることを特徴とする請求項1または2に記載の導電性高分子組成物:
0<m≦10,000,000、
0≦n<10,000,000、
0≦a≦20、
0≦b≦20であり、
A、B、A'及びB'は、それぞれ独立してC、Si、Ge、Sn及びPbよりなる群から選択され、
R1、R2、R3、R4、R1'、R2'、R3'及びR4'は、それぞれ独立して水素原子、ハロゲン原子、ニトロ基、置換または非置換のアミノ基、置換または非置換のアミノカルボニル基、置換または非置換のカルボキシル基、シアノ基、置換または非置換のC1−C30のアルキル基、置換または非置換のC1−C30のヘテロアルキル基、置換または非置換のC1−C30のアルコキシ基、置換または非置換のC1−30のヘテロアルコキシ基、置換または非置換のC6−C30のアリール基、置換または非置換のC6−C30のアリールアルキル基、置換または非置換のC6−C30のアリールオキシ基、置換または非置換のC2−C30のヘテロアリール基、置換または非置換のC2−C30のヘテロアリールアルキル基、置換または非置換のC2−C30のヘテロアリールオキシ基、置換または非置換のC5−C20のシクロアルキル基、置換または非置換のC2−C30のヘテロシクロアルキル基、置換または非置換のC1−C30のアルキルエステル基、置換または非置換のC1−C30のヘテロアルキルエステル基、置換または非置換のC6−C30のアリールエステル基及び置換または非置換のC2−C30のヘテロアリールエステル基よりなる群から選択され、但し、R1、R2、R3、及びR4のうち少なくとも一つ以上は、イオン基であるか、イオン基を含み、
X及びX'は、それぞれ独立して単純結合、O、S、置換または非置換のC1−C30のアルキレン基、置換または非置換のC1−C30のヘテロアルキレン基、置換または非置換のC6−C30のアリーレン基、置換または非置換のC6−C30のアリールアルキレン基、置換または非置換のC2−C30のヘテロアリーレン基、置換または非置換のC2−C30のヘテロアリールアルキレン基、置換または非置換のC5−C20のシクロアルキレン基、置換または非置換のC5−C30のヘテロシクロアルキレン基、置換または非置換のC6−30のアリールエステル基及び、置換または非置換のC2−C30のヘテロアリールエステル基よりなる群から選択され、
但し、nが0である場合、R1、R2、R3、及びR4のうち少なくとも一つ以上は、ハロゲン元素を含む疎水性官能基であるか、疎水性官能基を含む。 - 前記第2イオノマーが、前記化学式1においてn=0であり、0<m<10,000,000であり、炭化水素系、炭化フッ素系、またはシリコン系高分子であることを特徴とする請求項3に記載の導電性高分子組成物。
- 前記炭化フッ素系第2イオノマーが、過フッ化炭化フッ素系イオノマーであることを特徴とする請求項4に記載の導電性高分子組成物。
- 前記炭化フッ素系第2イオノマーが、下記化学式6、7、10ないし13のイオノマーを含むことを特徴とする請求項4または5に記載の導電性高分子組成物:
- 前記導電性高分子が、ポリエチレンジオキシチオフェン(PEDOT)、ポリアニリン、ポリピロール、ポリアセチレン、ポリフェニレン、ポリフェニレンビニレン及びポリチオフェンよりなる群から選択された一つ以上の高分子、またはこれらの共重合体であることを特徴とする請求項1〜6のいずれか1項に記載の導電性高分子組成物。
- 前記イオン基が、PO3 2-、SO3-、COO-、I-、CH3COO-よりなる群から選択された陰イオン基及びNa+、K+、Li+、Mg 2+ 、Zn 2+ 、Al 3+ の金属イオン、H+、CH3(CH2)nNH3 +(nは、0ないし50の整数)、NH4 +の有機イオンよりなる群から選択され、前記陰イオン基と対をなす陽イオン基を含むことを特徴とする請求項3〜7のいずれか1項に記載の導電性高分子組成物。
- 前記疎水性官能基が、ハロゲン原子であることを特徴とする請求項3〜8のいずれか1項に記載の導電性高分子組成物。
- 前記疎水性官能基が、フッ素原子であることを特徴とする請求項3〜9のいずれか1項に記載の導電性高分子組成物。
- 物理的架橋剤及び/または化学的架橋剤をさらに含むことを特徴とする請求項1〜10のいずれか1項に記載の導電性高分子組成物。
- 前記物理的架橋剤は、ヒドロキシ基(−OH)を含む低分子または高分子化合物であることを特徴とする請求項11に記載の導電性高分子組成物。
- 前記物理的架橋剤は、グリセロール、ブタノール、ポリビニルアルコール、ポリエチレングリコール、ポリエチレンイミン、ポリビニルピロリドンから選択される化合物であることを特徴とする請求項11に記載の導電性高分子組成物。
- 前記化学的架橋剤は、テトラエチルオキシシラン(TEOS)、ポリアジリジン、メラミン系物質、エポキシ系物質から選択される化合物であることを特徴とする請求項11〜13のいずれか1項に記載の導電性高分子組成物。
- 請求項1ないし請求項14のうち何れか1項に記載の導電性高分子組成物からコーティングして形成された導電性薄膜。
- 請求項15に記載の導電性薄膜を含むことを特徴とする光電素子。
- 前記光電素子が、有機電界発光素子、有機太陽電池、有機トランジスタ及び有機メモリ素子よりなる群から選ばれてなる少なくとも1種であることを特徴とする請求項16に記載の光電素子。
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