JP5429269B2 - ボンディングワイヤの製造方法 - Google Patents
ボンディングワイヤの製造方法 Download PDFInfo
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- JP5429269B2 JP5429269B2 JP2011270442A JP2011270442A JP5429269B2 JP 5429269 B2 JP5429269 B2 JP 5429269B2 JP 2011270442 A JP2011270442 A JP 2011270442A JP 2011270442 A JP2011270442 A JP 2011270442A JP 5429269 B2 JP5429269 B2 JP 5429269B2
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- wire
- bonding wire
- bonding
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- die
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
- H01L24/745—Apparatus for manufacturing wire connectors
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H01L2224/49171—Fan-out arrangements
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85203—Thermocompression bonding
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
Description
前記伸線工程における前記ダイスのリダクション率を下記(1)式で定義したときに、
2つ目以降のダイスのリダクション率が5%以上15%以下の範囲にあり、
前記1つ目のダイスのリダクション率が前記2つ目のダイスのリダクション率よりも小さく設定されたことを特徴とする。
前記2つ目以降のダイスのリダクション率が8%より大きく13%以下の範囲で設定されることが好ましい。
20 被覆層
30 被覆済みワイヤ
31 ボンディングワイヤ
40、41 スプール
50、51 キャプスタン
60〜67 ダイス
70 ボール
80 シリコンチップ
90 アルミニウム電極
100 パラジウムめっき付きリード
Claims (5)
- 銅を主成分とする芯材の周囲に被覆層を形成した被覆済みワイヤを複数のダイスに挿通させて段階的に伸線する伸線工程を有するボンディングワイヤの製造方法であって、
前記伸線工程における前記ダイスのリダクション率を下記(1)式で定義したときに、
2つ目以降のダイスのリダクション率が5%以上15%以下の範囲にあり、
前記1つ目のダイスのリダクション率が前記2つ目のダイスのリダクション率よりも小さく設定されたことを特徴とするボンディングワイヤの製造方法。 - 前記1つ目のダイスのリダクション率が5%以上8%以下の範囲で設定され、
前記2つ目以降のダイスのリダクション率が8%より大きく13%以下の範囲で設定されたことを特徴とする請求項1に記載のボンディングワイヤの製造方法。 - 前記被覆層は、パラジウムを主成分とすることを特徴とする請求項1又は2に記載のボンディングワイヤの製造方法。
- 前記被覆層は、めっきにより形成されるめっき層であることを特徴とする請求項1乃至3のいずれか一項に記載のボンディングワイヤの製造方法。
- 前記芯材は、リンを含有することを特徴とする請求項1乃至4のいずれか一項に記載のボンディングワイヤの製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011270442A JP5429269B2 (ja) | 2011-12-09 | 2011-12-09 | ボンディングワイヤの製造方法 |
Applications Claiming Priority (1)
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JP2011270442A JP5429269B2 (ja) | 2011-12-09 | 2011-12-09 | ボンディングワイヤの製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2013122971A JP2013122971A (ja) | 2013-06-20 |
JP5429269B2 true JP5429269B2 (ja) | 2014-02-26 |
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Application Number | Title | Priority Date | Filing Date |
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JP2011270442A Expired - Fee Related JP5429269B2 (ja) | 2011-12-09 | 2011-12-09 | ボンディングワイヤの製造方法 |
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Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004014884A (ja) * | 2002-06-07 | 2004-01-15 | Sumitomo Electric Wintec Inc | ボンディングワイヤー |
JP4349641B1 (ja) * | 2009-03-23 | 2009-10-21 | 田中電子工業株式会社 | ボールボンディング用被覆銅ワイヤ |
JP5550369B2 (ja) * | 2010-02-03 | 2014-07-16 | 新日鉄住金マテリアルズ株式会社 | 半導体用銅ボンディングワイヤとその接合構造 |
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2011
- 2011-12-09 JP JP2011270442A patent/JP5429269B2/ja not_active Expired - Fee Related
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