JP5426494B2 - プローブカードの製造方法 - Google Patents
プローブカードの製造方法 Download PDFInfo
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- JP5426494B2 JP5426494B2 JP2010162545A JP2010162545A JP5426494B2 JP 5426494 B2 JP5426494 B2 JP 5426494B2 JP 2010162545 A JP2010162545 A JP 2010162545A JP 2010162545 A JP2010162545 A JP 2010162545A JP 5426494 B2 JP5426494 B2 JP 5426494B2
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- Prior art keywords
- probe
- substrate
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- 239000000523 sample Substances 0.000 title claims description 238
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims description 117
- 230000015572 biosynthetic process Effects 0.000 claims description 28
- 238000010438 heat treatment Methods 0.000 claims description 14
- 238000009713 electroplating Methods 0.000 claims description 12
- 238000000137 annealing Methods 0.000 claims description 5
- 238000007747 plating Methods 0.000 description 37
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000002184 metal Substances 0.000 description 21
- 238000000034 method Methods 0.000 description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 17
- 239000011651 chromium Substances 0.000 description 14
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 13
- 239000000463 material Substances 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 13
- 230000008569 process Effects 0.000 description 12
- 229910000990 Ni alloy Inorganic materials 0.000 description 8
- 229910052804 chromium Inorganic materials 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 229910052759 nickel Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 6
- 238000007689 inspection Methods 0.000 description 6
- 229910000599 Cr alloy Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910001120 nichrome Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Measuring Leads Or Probes (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
2 サブ基板
3 プローブ基板
10 外部端子
11 コンタクトプローブ
111 コンタクト部
112 ビーム部
113 ベース部
114 ベース脚部
115 プローブ電極
12 ボンディング電極
14 抵抗膜
16 配線パターン
17〜19 下地膜
21 ボンディング電極
22 導電性ワイヤ
51,54 金属膜(スパッタリングによるもの)
52,53,61〜66 めっき層
70〜73 犠牲層
100 プローブカード
Claims (1)
- プローブ基板上に互いに離間した第1導電層及び第2導電層を形成するステップと、
第1導電層及び第2導電層の形成後のプローブ基板上に、第1導電層及び第2導電層よりも電気抵抗率の高い導電部材によって第1導電層及び第2導電層を接続する抵抗膜を形成するステップと、
上記抵抗膜の形成後のプローブ基板を加熱し、上記抵抗膜を一定温度でアニールするステップと、
上記抵抗膜のアニール処理後、電気めっきにより第1導電層上にプローブを形成するステップと、
上記プローブの形成後のプローブ基板を配線基板上に配設するステップとからなることを特徴とするプローブカードの製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010162545A JP5426494B2 (ja) | 2010-07-20 | 2010-07-20 | プローブカードの製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010162545A JP5426494B2 (ja) | 2010-07-20 | 2010-07-20 | プローブカードの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012026741A JP2012026741A (ja) | 2012-02-09 |
JP5426494B2 true JP5426494B2 (ja) | 2014-02-26 |
Family
ID=45779871
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010162545A Active JP5426494B2 (ja) | 2010-07-20 | 2010-07-20 | プローブカードの製造方法 |
Country Status (1)
Country | Link |
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JP (1) | JP5426494B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI454710B (zh) * | 2012-09-19 | 2014-10-01 | Mpi Corp | Probe card and its manufacturing method |
CN105319400B (zh) * | 2014-07-29 | 2018-03-23 | 中华大学 | 垂直式探针卡及其工艺方法 |
JP6301243B2 (ja) * | 2014-12-11 | 2018-03-28 | 三菱電機株式会社 | 半導体評価装置および半導体評価方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5012191B2 (ja) * | 2007-05-14 | 2012-08-29 | 株式会社日本マイクロニクス | 多層配線板およびその製造方法並びにプローブ装置 |
JP2010045100A (ja) * | 2008-08-11 | 2010-02-25 | Ngk Spark Plug Co Ltd | 配線基板、ic電気特性検査用配線基板、及び配線基板の製造方法 |
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2010
- 2010-07-20 JP JP2010162545A patent/JP5426494B2/ja active Active
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JP2012026741A (ja) | 2012-02-09 |
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