JP5414125B2 - 薄膜太陽電池のコンタクト領域を接続する方法 - Google Patents
薄膜太陽電池のコンタクト領域を接続する方法 Download PDFInfo
- Publication number
- JP5414125B2 JP5414125B2 JP2010532484A JP2010532484A JP5414125B2 JP 5414125 B2 JP5414125 B2 JP 5414125B2 JP 2010532484 A JP2010532484 A JP 2010532484A JP 2010532484 A JP2010532484 A JP 2010532484A JP 5414125 B2 JP5414125 B2 JP 5414125B2
- Authority
- JP
- Japan
- Prior art keywords
- contact
- laser
- back side
- solar cell
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 96
- 239000010409 thin film Substances 0.000 title claims description 60
- 239000010408 film Substances 0.000 claims description 32
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 26
- 229910052802 copper Inorganic materials 0.000 claims description 26
- 239000010949 copper Substances 0.000 claims description 26
- 239000011248 coating agent Substances 0.000 claims description 13
- 238000000576 coating method Methods 0.000 claims description 13
- 238000005553 drilling Methods 0.000 claims description 11
- 238000010521 absorption reaction Methods 0.000 claims description 9
- 238000000608 laser ablation Methods 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 6
- 238000003825 pressing Methods 0.000 claims description 4
- 230000003595 spectral effect Effects 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 2
- 230000002123 temporal effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 102
- 210000004027 cell Anatomy 0.000 description 83
- 229910052751 metal Inorganic materials 0.000 description 71
- 239000002184 metal Substances 0.000 description 71
- 239000000463 material Substances 0.000 description 24
- 238000002679 ablation Methods 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 14
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 13
- 229910052750 molybdenum Inorganic materials 0.000 description 13
- 239000011733 molybdenum Substances 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 7
- 150000002739 metals Chemical class 0.000 description 7
- 229920000642 polymer Polymers 0.000 description 7
- 238000003466 welding Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000005304 joining Methods 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229920006254 polymer film Polymers 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- 239000006096 absorbing agent Substances 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009501 film coating Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 229920000307 polymer substrate Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- CVOFKRWYWCSDMA-UHFFFAOYSA-N 2-chloro-n-(2,6-diethylphenyl)-n-(methoxymethyl)acetamide;2,6-dinitro-n,n-dipropyl-4-(trifluoromethyl)aniline Chemical compound CCC1=CC=CC(CC)=C1N(COC)C(=O)CCl.CCCN(CCC)C1=C([N+]([O-])=O)C=C(C(F)(F)F)C=C1[N+]([O-])=O CVOFKRWYWCSDMA-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229920001646 UPILEX Polymers 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 210000000170 cell membrane Anatomy 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229920005570 flexible polymer Polymers 0.000 description 1
- 229920001002 functional polymer Polymers 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000013532 laser treatment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000012779 reinforcing material Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/93—Interconnections
- H10F77/933—Interconnections for devices having potential barriers
- H10F77/935—Interconnections for devices having potential barriers for photovoltaic devices or modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102007052972.6 | 2007-11-07 | ||
| DE102007052972A DE102007052972A1 (de) | 2007-11-07 | 2007-11-07 | Verfahren und Mittel zum Verbinden dünner Metallschichten |
| PCT/EP2008/009316 WO2009059752A2 (de) | 2007-11-07 | 2008-11-05 | Verfahren und mittel zum verbinden dünner metallschichten |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011503855A JP2011503855A (ja) | 2011-01-27 |
| JP2011503855A5 JP2011503855A5 (https=) | 2011-12-15 |
| JP5414125B2 true JP5414125B2 (ja) | 2014-02-12 |
Family
ID=40530465
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010532484A Expired - Fee Related JP5414125B2 (ja) | 2007-11-07 | 2008-11-05 | 薄膜太陽電池のコンタクト領域を接続する方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20100294347A1 (https=) |
| EP (1) | EP2218104A2 (https=) |
| JP (1) | JP5414125B2 (https=) |
| CN (1) | CN101971351B (https=) |
| DE (1) | DE102007052972A1 (https=) |
| WO (1) | WO2009059752A2 (https=) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2113945A1 (de) * | 2008-04-30 | 2009-11-04 | 3S Swiss Solar Systems AG | Verfahren zur Herstellung einer Kontaktierung von Solarzellen |
| DE102011104159A1 (de) * | 2011-06-14 | 2012-12-20 | Institut Für Solarenergieforschung Gmbh | Verfahren zum elektrischen verbinden mehrerer solarzellen und photovoltaikmodul |
| US8399281B1 (en) * | 2011-08-31 | 2013-03-19 | Alta Devices, Inc. | Two beam backside laser dicing of semiconductor films |
| US8361828B1 (en) * | 2011-08-31 | 2013-01-29 | Alta Devices, Inc. | Aligned frontside backside laser dicing of semiconductor films |
| DE102011117757A1 (de) * | 2011-11-05 | 2013-05-08 | Robert Bosch Gmbh | Lötverfahren zum Herstellen einer elektrisch leitfähigen Verbindung |
| DE102012218369B4 (de) | 2012-10-09 | 2023-08-03 | Robert Bosch Gmbh | Verfahren zum Verbinden von schichtartigen Metallstrukturen auf einem Polymer und Schichtaufbau aus einem Polymer und schichtartigen Metallstrukturen mit integriertem Thermoelement |
| DE102013005139A1 (de) * | 2013-03-26 | 2014-10-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Abtragen von sprödhartem Material mittels Laserstrahlung |
| DE102013217356B4 (de) * | 2013-08-30 | 2024-02-01 | Meyer Burger (Germany) Gmbh | Verfahren zum Herstellen eines Solarzellensegments und Verfahren zum Herstellen einer Solarzelle |
| US20150072515A1 (en) * | 2013-09-09 | 2015-03-12 | Rajendra C. Dias | Laser ablation method and recipe for sacrificial material patterning and removal |
| US9818903B2 (en) | 2014-04-30 | 2017-11-14 | Sunpower Corporation | Bonds for solar cell metallization |
| DE102016203363A1 (de) | 2016-03-02 | 2017-09-07 | Bayerische Motoren Werke Aktiengesellschaft | Verfahren zum stoffschlüssigen Verbinden eines Aluminiumgussbauteils mit einem Fügepartner und Bauteil |
| CN108247205B (zh) * | 2016-12-28 | 2020-02-07 | 富泰华工业(深圳)有限公司 | 激光铆接方法 |
| CN109877454B (zh) * | 2019-04-11 | 2021-02-09 | 武汉华工激光工程有限责任公司 | 薄膜太阳能电池电极的激光焊接方法 |
| DE102019122213A1 (de) | 2019-08-19 | 2021-02-25 | Heliatek Gmbh | Verfahren zur elektrisch leitenden Kontaktierung eines mindestens eine Schutzschicht aufweisenden optoelektronischen Bauelements und optoelektronisches Bauelement mit einer solchen Kontaktierung |
| DE102019215000A1 (de) * | 2019-09-30 | 2021-04-01 | Robert Bosch Gmbh | Mikroschweißverfahren flexibler und dünner Folien, bspw. für den Einsatz in elektrischen und elektronischen Vorrichtungen |
| DE102020131743A1 (de) | 2020-11-30 | 2022-06-02 | Heliatek Gmbh | Photovoltaisches Element mit mindestens einer photovoltaischen Zelle und mit einer Rückseitenbarriere |
| CN114334482B (zh) * | 2021-06-15 | 2023-08-25 | 清华大学 | 器件制造方法、储能器件和能源供应装置 |
| DE102022206270A1 (de) | 2022-06-22 | 2023-12-28 | Robert Bosch Gesellschaft mit beschränkter Haftung | Verbindungsverfahren zum Verbinden zweier metallischer Schichten |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2139850A1 (de) * | 1971-08-09 | 1973-02-15 | Licentia Gmbh | Verfahren und einrichtung zur verbindung von kontakten an solargeneratoren |
| JPS6250125A (ja) * | 1985-08-29 | 1987-03-04 | Toyota Motor Corp | 合成樹脂材料と異種材料の接合方法 |
| DE3619342A1 (de) * | 1986-06-09 | 1987-12-10 | Klaus Dr Rohr | Innenbeschichten, innenlegieren, innenfuellen von durchgangsloechern mit hilfe des lasers |
| US4817020A (en) * | 1987-06-22 | 1989-03-28 | General Electric Company | Cooling rate determination apparatus for laser material processing |
| US4965655A (en) * | 1987-12-10 | 1990-10-23 | Minnesota Mining And Manufacturing Company | Interconnected semiconductor devices |
| DE69122485T2 (de) * | 1990-07-12 | 1997-02-27 | Nippon Denso Co | Verfahren zum schweissen von metallen aus verschiedenen sorten mittels lasers |
| JP3323573B2 (ja) * | 1992-03-31 | 2002-09-09 | キヤノン株式会社 | 太陽電池モジュール及びその製造方法 |
| US5391235A (en) * | 1992-03-31 | 1995-02-21 | Canon Kabushiki Kaisha | Solar cell module and method of manufacturing the same |
| US5877472A (en) * | 1996-02-22 | 1999-03-02 | Pacesetter, Inc. | System for laser-welding components of an implantable device |
| JPH1177348A (ja) | 1997-08-29 | 1999-03-23 | Canon Inc | 溶接方法及び光起電力素子 |
| JPH11243224A (ja) * | 1997-12-26 | 1999-09-07 | Canon Inc | 光起電力素子モジュール及びその製造方法並びに非接触処理方法 |
| DE19814780A1 (de) * | 1998-04-02 | 1999-07-22 | Ver Glaswerke Gmbh | Fotovoltaisches Bauelement |
| DE19913436C1 (de) * | 1999-03-25 | 2000-12-14 | Erbsloeh Ag | Schweißverbindung von Bauteilen aus unterschiedlichen Werkstoffen |
| US6455347B1 (en) * | 1999-06-14 | 2002-09-24 | Kaneka Corporation | Method of fabricating thin-film photovoltaic module |
| JP3477119B2 (ja) * | 1999-09-17 | 2003-12-10 | 日東電工株式会社 | フレキシブル配線板の導体層間の接続方法、およびフレキシブル配線板 |
| US6768754B1 (en) * | 2000-09-13 | 2004-07-27 | National Research Council Of Canada | Quantum dot tunable external cavity lasers (QD-TEC lasers) |
| US20030044539A1 (en) * | 2001-02-06 | 2003-03-06 | Oswald Robert S. | Process for producing photovoltaic devices |
| CN1486289A (zh) * | 2001-05-29 | 2004-03-31 | 皇家菲利浦电子有限公司 | 金属-陶瓷的结合 |
| US20050011551A1 (en) | 2003-07-14 | 2005-01-20 | Simburger Edward J. | Thin film solar cell electrical contacts |
| US7122398B1 (en) * | 2004-03-25 | 2006-10-17 | Nanosolar, Inc. | Manufacturing of optoelectronic devices |
| JP4077456B2 (ja) | 2005-01-14 | 2008-04-16 | 株式会社カネカ | 集積化薄膜太陽電池 |
| JP2006320954A (ja) * | 2005-05-20 | 2006-11-30 | Nichirin Co Ltd | 鉄系合金部材とアルミニウム系合金部材との異種金属溶接接合体 |
| JP2006332453A (ja) | 2005-05-27 | 2006-12-07 | Sharp Corp | 薄膜太陽電池の製造方法および薄膜太陽電池 |
-
2007
- 2007-11-07 DE DE102007052972A patent/DE102007052972A1/de not_active Ceased
-
2008
- 2008-11-05 CN CN200880115931.9A patent/CN101971351B/zh not_active Expired - Fee Related
- 2008-11-05 WO PCT/EP2008/009316 patent/WO2009059752A2/de not_active Ceased
- 2008-11-05 EP EP08846629A patent/EP2218104A2/de not_active Withdrawn
- 2008-11-05 US US12/734,523 patent/US20100294347A1/en not_active Abandoned
- 2008-11-05 JP JP2010532484A patent/JP5414125B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE102007052972A1 (de) | 2009-05-14 |
| WO2009059752A2 (de) | 2009-05-14 |
| US20100294347A1 (en) | 2010-11-25 |
| CN101971351A (zh) | 2011-02-09 |
| EP2218104A2 (de) | 2010-08-18 |
| CN101971351B (zh) | 2013-10-16 |
| WO2009059752A3 (de) | 2009-12-03 |
| JP2011503855A (ja) | 2011-01-27 |
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