JP5408583B2 - 発光装置及び発光装置の製造方法 - Google Patents
発光装置及び発光装置の製造方法 Download PDFInfo
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- JP5408583B2 JP5408583B2 JP2008170388A JP2008170388A JP5408583B2 JP 5408583 B2 JP5408583 B2 JP 5408583B2 JP 2008170388 A JP2008170388 A JP 2008170388A JP 2008170388 A JP2008170388 A JP 2008170388A JP 5408583 B2 JP5408583 B2 JP 5408583B2
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- JP
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- Prior art keywords
- light emitting
- wiring pattern
- emitting element
- insulating layer
- metal substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000002184 metal Substances 0.000 claims description 72
- 229910052751 metal Inorganic materials 0.000 claims description 72
- 239000000758 substrate Substances 0.000 claims description 49
- 238000000034 method Methods 0.000 claims description 29
- 238000007747 plating Methods 0.000 claims description 20
- 238000009713 electroplating Methods 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 5
- 238000009413 insulation Methods 0.000 description 7
- 239000010949 copper Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Description
絶縁層103としては、プリプレグ、ガラスエポキシ板、セラミックなどを用いることができる。絶縁層103としてガラスエポキシ板を用いる場合、ガラスエポキシ板は、接着剤によって金属基板102に接着することができる。
102 金属基板
102a 端面
103 絶縁層
103a 端辺
103b 開口部
104 配線パターン
105 ワイヤ
Claims (6)
- 発光素子が搭載された金属基板を有する発光装置の製造方法であって、
一面に絶縁層が形成された金属基板であって、該金属基板の少なくとも端辺に前記絶縁層の端辺が接している前記金属基板を準備する準備工程と、
前記絶縁層の前記金属基板と反対側の面に、一端が前記絶縁層の端辺まで延びている配線パターンを形成する配線パターン形成工程と、
電解めっき法によって、前記配線パターンに電流を流しつつ前記配線パターンの表面にめっき金属を形成するめっき工程と、
前記めっき工程の後に、前記配線パターンの一端から前記絶縁層の表面を経て前記金属基板の端面に到達するまでの最短距離が前記絶縁層の厚みよりも長くなるように、前記配線パターンの一端側を除去する除去工程と、
前記発光素子を搭載し、前記発光素子と前記配線パターンとを、電気的に接続する発光素子搭載工程と、を有する発光装置の製造方法。 - 前記除去工程において、前記配線パターンの前記一端が前記絶縁層の前記端辺に到達しないように、前記配線パターンを形成する、請求項1に記載の発光装置の製造方法。
- 前記除去工程において、エッチングによって前記配線パターンの前記一端側を除去する、請求項1または2に記載の発光装置の製造方法。
- 前記発光素子搭載工程において、ワイヤボンディングによって、前記発光素子と前記配線パターンとを電気的に接続する、請求項1から3のいずれか1項に記載の発光装置の製造方法。
- 前記金属基板の一部が露出するように、前記絶縁層は開口部を有しており、
前記発光素子搭載工程において、前記開口部から露出している前記金属基板に前記発光素子を配置する、請求項1から4のいずれか1項に記載の発光装置の製造方法。 - 前記発光素子が発光ダイオードであることを特徴とする、請求項1から5のいずれか1項に記載の発光装置の製造方法。
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JP2008170388A JP5408583B2 (ja) | 2008-06-30 | 2008-06-30 | 発光装置及び発光装置の製造方法 |
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JP2008170388A JP5408583B2 (ja) | 2008-06-30 | 2008-06-30 | 発光装置及び発光装置の製造方法 |
Related Child Applications (1)
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JP2013167996A Division JP2013229639A (ja) | 2013-08-13 | 2013-08-13 | 発光装置及び発光装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010010558A JP2010010558A (ja) | 2010-01-14 |
JP5408583B2 true JP5408583B2 (ja) | 2014-02-05 |
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JP2008170388A Active JP5408583B2 (ja) | 2008-06-30 | 2008-06-30 | 発光装置及び発光装置の製造方法 |
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Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101773045B1 (ko) * | 2011-01-21 | 2017-08-30 | 삼성전자 주식회사 | 금속 기판 및 그 제조 방법 |
JP5198638B2 (ja) * | 2011-09-21 | 2013-05-15 | 株式会社東芝 | 発光素子モジュール基板の製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2003030274A1 (fr) * | 2001-09-27 | 2003-04-10 | Nichia Corporation | Dispositif emetteur de lumiere et procede de fabrication associe |
JP2003309292A (ja) * | 2002-04-15 | 2003-10-31 | Citizen Electronics Co Ltd | 表面実装型発光ダイオードのメタルコア基板及びその製造方法 |
JP4360858B2 (ja) * | 2003-07-29 | 2009-11-11 | シチズン電子株式会社 | 表面実装型led及びそれを用いた発光装置 |
JP4127220B2 (ja) * | 2004-02-24 | 2008-07-30 | 松下電工株式会社 | Led実装用プリント基板及びその製造方法 |
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