JP5398537B2 - 逆行性炭素プロファイルを有する低欠陥Si:C層 - Google Patents
逆行性炭素プロファイルを有する低欠陥Si:C層 Download PDFInfo
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- 229910052799 carbon Inorganic materials 0.000 title claims description 291
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims description 290
- 230000007547 defect Effects 0.000 title description 64
- 239000000758 substrate Substances 0.000 claims description 61
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 54
- 239000004065 semiconductor Substances 0.000 claims description 35
- 239000012212 insulator Substances 0.000 claims description 5
- 230000003247 decreasing effect Effects 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 172
- 229910052710 silicon Inorganic materials 0.000 description 167
- 239000010703 silicon Substances 0.000 description 167
- 238000002513 implantation Methods 0.000 description 42
- 238000000348 solid-phase epitaxy Methods 0.000 description 29
- 238000000137 annealing Methods 0.000 description 19
- 238000000034 method Methods 0.000 description 19
- 238000003917 TEM image Methods 0.000 description 17
- 238000005280 amorphization Methods 0.000 description 12
- 239000013078 crystal Substances 0.000 description 12
- 238000005468 ion implantation Methods 0.000 description 12
- 230000007423 decrease Effects 0.000 description 10
- 125000004432 carbon atom Chemical group C* 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000006467 substitution reaction Methods 0.000 description 7
- 239000007943 implant Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000005669 field effect Effects 0.000 description 5
- 238000005224 laser annealing Methods 0.000 description 5
- 239000002210 silicon-based material Substances 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 238000004151 rapid thermal annealing Methods 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000010348 incorporation Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 241000894007 species Species 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
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Description
低欠陥の高炭素濃度のSi:C層を電界効果トランジスタ内にエピタキシャルに局所的に組み入れるための半導体構造体及び方法に対する別の必要性が存在する
136、236、636:深さプロファイル
300、700:透過電子顕微鏡写真(TEM)
310:シリコン基板
320:埋込み酸化物(BOX)層
330、730:炭素置換型単結晶シリコン(Si:C)層
349:結晶欠陥
360、760:クロム層
400:バルク・シリコン基板
410:シリコン層
432、532:第4の体積部分
433、533:第2の体積部分
434、534:第3の体積部分
435、535:第1の体積部分
436:炭素注入シリコン層
500:SOIシリコン基板
510、710、810:下層のシリコン層
520、720、820:埋込み酸化物層
536:上層のシリコン層
632:深さプロファイル636の第4の部分
633:深さプロファイル636の第2の部分
634:深さプロファイル636の第3の部分
635:深さプロファイル636の第1の部分
636:深さプロファイル
800:トランジスタ構造体
830:トランジスタ本体
832:FET延長部
834:ソース/ドレーン電気的ドーピングを含まない埋込みSi:C層
836:ソース/ドレーン電気的ドーピングを含む埋込みSi:C層
838:炭素注入領域
842:ゲート誘電体
844:ゲート導電体スタック
852:第1のスペーサ
854:第2のスペーサ
Claims (7)
- 半導体基板の表面直下に位置し、一定の厚さを有し、炭素置換型単結晶シリコン層を備えた半導体構造体であって、
前記炭素置換型単結晶シリコン層は、第1の体積部分と、第2の体積部分と、第3の体積部分と、第4の体積部分とを含み、
第1の体積部分は、前記半導体基板の表面と前記表面から厚さの2%距離に対応する2%線との間の前記単結晶シリコン層内に位置して、
第3の体積部分は、前記2%線と前記表面から厚さの30%距離に対応する30%線との間の前記単結晶シリコン層内に位置して、
第2の体積部分は、前記表面から前記厚さの30%距離に対応する30%線と60%距離に対応する60%線との間の前記単結晶シリコン層内に位置して、
第4の体積部分は、前記60%線と前記炭素置換型単結晶シリコン層の底面との間の前記単結晶シリコン層内に位置して、
前記第1の体積部分内の平均炭素濃度は、前記第2の体積部分内の平均炭素濃度の25%又はそれ以下であり、
前記第2の体積部分内の平均炭素濃度は、原子濃度で0.8%又はそれ以上であり、前記炭素濃度は、前記炭素置換型単結晶シリコン層の前記厚さの30%における深さから、前記炭素置換型単結晶シリコン層の前記厚さの2%における深さまで単調に減少し、
前記半導体基板は、絶縁体上シリコン(SOI)基板であり、
前記炭素置換型単結晶シリコン層は、前記炭素置換型単結晶シリコン層の底面の位置で埋込み酸化物層に接触し、
前記前記第3の体積部分内の平均炭素濃度は、前記第2の体積部分内の前記平均炭素濃度の50%と100%の間の範囲にある、半導体構造体。 - 半導体基板上のソース及びドレーンを有する少なくとも1つのトランジスタを備えた半導体構造体であって、
前記ソース及び前記ドレーンの各々は、半導体基板の表面の直下に位置し、一定の厚さを有し、炭素置換型単結晶シリコン層を含み、
前記炭素置換型単結晶シリコン層は、第1の体積部分と、第2の体積部分と、第3の体積部分と、第4の体積部分とを含み、
第1の体積部分は、前記半導体基板の表面と前記表面から厚さの2%距離に対応する2%線との間の前記単結晶シリコン層内に位置して、
第3の体積部分は、前記2%線と前記表面から厚さの30%距離に対応する30%線との間の前記単結晶シリコン層内に位置して、
第2の体積部分は、前記表面から前記厚さの30%距離に対応する30%線と60%距離に対応する60%線との間の前記単結晶シリコン層内に位置して、
第4の体積部分は、前記60%線と前記炭素置換型単結晶シリコン層の底面との間の前記単結晶シリコン層内に位置して、
前記第1の体積部分内の平均炭素濃度は、前記第2の体積部分内の平均炭素濃度の25%又はそれ以下であり、
前記第2の体積部分内の平均炭素濃度は、原子濃度で0.8%又はそれ以上であり、前記炭素濃度は、前記炭素置換型単結晶シリコン層の前記厚さの30%における深さから、前記炭素置換型単結晶シリコン層の前記厚さの2%における深さまで単調に減少し、
前記半導体基板は、絶縁体上シリコン(SOI)基板であり、
前記炭素置換型単結晶シリコン層は、前記炭素置換型単結晶シリコン層の底面の位置で埋込み酸化物層に接触し、
前記前記第3の体積部分内の平均炭素濃度は、前記第2の体積部分内の前記平均炭素濃度の50%と100%の間の範囲にある、半導体構造体。 - 前記第2の体積部分内の前記平均炭素濃度は、原子濃度で5%又はそれ以下である、請求項2に記載の半導体構造体。
- 前記第2の体積部分内の前記平均炭素濃度は、原子濃度で4%又はそれ以下である、請求項3に記載の半導体構造体。
- 前記第2の体積部分内の前記平均炭素濃度は、原子濃度で3%又はそれ以下である、請求項4に記載の半導体構造体。
- 前記炭素置換型単結晶シリコン層の前記厚さは、10nmと300nmの間の範囲にある、請求項2に記載の半導体構造体。
- 前記炭素置換型単結晶シリコン層の前記厚さは、30nmと100nmの間の範囲にある、請求項6に記載の半導体構造体。
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