JP5391162B2 - 電力用半導体装置 - Google Patents

電力用半導体装置 Download PDF

Info

Publication number
JP5391162B2
JP5391162B2 JP2010182086A JP2010182086A JP5391162B2 JP 5391162 B2 JP5391162 B2 JP 5391162B2 JP 2010182086 A JP2010182086 A JP 2010182086A JP 2010182086 A JP2010182086 A JP 2010182086A JP 5391162 B2 JP5391162 B2 JP 5391162B2
Authority
JP
Japan
Prior art keywords
semiconductor device
power semiconductor
heat
package
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2010182086A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012043875A5 (https=
JP2012043875A (ja
Inventor
志織 井高
靖 中山
健史 大井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2010182086A priority Critical patent/JP5391162B2/ja
Publication of JP2012043875A publication Critical patent/JP2012043875A/ja
Publication of JP2012043875A5 publication Critical patent/JP2012043875A5/ja
Application granted granted Critical
Publication of JP5391162B2 publication Critical patent/JP5391162B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5473—Dispositions of multiple bond wires multiple bond wires connected to a common bond pad
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5475—Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2010182086A 2010-08-17 2010-08-17 電力用半導体装置 Active JP5391162B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010182086A JP5391162B2 (ja) 2010-08-17 2010-08-17 電力用半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010182086A JP5391162B2 (ja) 2010-08-17 2010-08-17 電力用半導体装置

Publications (3)

Publication Number Publication Date
JP2012043875A JP2012043875A (ja) 2012-03-01
JP2012043875A5 JP2012043875A5 (https=) 2012-11-29
JP5391162B2 true JP5391162B2 (ja) 2014-01-15

Family

ID=45899873

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010182086A Active JP5391162B2 (ja) 2010-08-17 2010-08-17 電力用半導体装置

Country Status (1)

Country Link
JP (1) JP5391162B2 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016009556A1 (ja) 2014-07-18 2016-01-21 三菱電機株式会社 車両用補助電源装置
JP6381453B2 (ja) * 2015-01-27 2018-08-29 三菱電機株式会社 半導体装置
WO2017168756A1 (ja) * 2016-04-01 2017-10-05 三菱電機株式会社 半導体装置
JP6852513B2 (ja) * 2017-03-30 2021-03-31 株式会社オートネットワーク技術研究所 回路装置
JP6877600B1 (ja) * 2020-01-16 2021-05-26 三菱電機株式会社 半導体装置
JP7706463B2 (ja) * 2020-02-18 2025-07-11 ラム リサーチ コーポレーション ヒートスプレッダを備えた高温基板支持体
JP7830242B2 (ja) * 2022-06-15 2026-03-16 Ａｓｔｅｍｏ株式会社 電力変換装置
JPWO2024018810A1 (https=) * 2022-07-21 2024-01-25
JP7675786B1 (ja) * 2023-11-24 2025-05-13 株式会社東芝 半導体装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03126055U (https=) * 1990-03-30 1991-12-19
JP3130239B2 (ja) * 1995-08-02 2001-01-31 松下電子工業株式会社 樹脂封止型半導体装置およびその製造方法
JP2004095670A (ja) * 2002-08-29 2004-03-25 Toshiba Corp 半導体装置
US7786565B2 (en) * 2003-09-04 2010-08-31 Panasonic Corporation Semiconductor apparatus including power semiconductor device constructed by using wide band gap semiconductor
JP2008060430A (ja) * 2006-08-31 2008-03-13 Daikin Ind Ltd 電力変換装置
WO2011086896A1 (ja) * 2010-01-15 2011-07-21 三菱電機株式会社 電力用半導体モジュール

Also Published As

Publication number Publication date
JP2012043875A (ja) 2012-03-01

Similar Documents

Publication Publication Date Title
JP5391162B2 (ja) 電力用半導体装置
CN107170714B (zh) 一种低寄生电感功率模块及双面散热低寄生电感功率模块
CN107195623B (zh) 一种双面散热高可靠功率模块
JP2007251076A (ja) パワー半導体モジュール
JPWO2016136457A1 (ja) パワーモジュール
JP5217884B2 (ja) 半導体装置
JP6308780B2 (ja) パワーモジュール
WO2014097798A1 (ja) 半導体装置
CN206864452U (zh) 一种低寄生电感功率模块及双面散热低寄生电感功率模块
CN105849899A (zh) 防水型电子设备以及其制造方法
CN101587870A (zh) 半导体器件
JP2015095560A (ja) パワーモジュール
CN107408554A (zh) 功率半导体组件和电力转换装置
CN113782504A (zh) 一种集成散热器的功率模块简化封装结构及制作方法
CN207165543U (zh) 一种低寄生电感双面散热功率模块
JP7822266B2 (ja) 半導体装置、半導体装置の製造方法および電力変換装置
WO2013171946A1 (ja) 半導体装置の製造方法および半導体装置
CN119050076A (zh) 半导体封装结构
KR102829692B1 (ko) 파워모듈 및 그 제조방법
KR102792456B1 (ko) 파워모듈 및 그 제조방법
CN117981483A (zh) 功率半导体模块和用于具有这种功率半导体模块的运输工具的传动系
KR102795539B1 (ko) 파워모듈
KR20210141370A (ko) 파워모듈 및 그 제조방법
KR20180087330A (ko) 파워 모듈의 양면 냉각을 위한 금속 슬러그
KR102768833B1 (ko) 세라믹기판 및 이를 포함하는 파워모듈

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121016

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20121016

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130808

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130917

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20131011

R150 Certificate of patent or registration of utility model

Ref document number: 5391162

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250