JP5386874B2 - 半導体ウェーハ周辺部の研磨装置及びその方法 - Google Patents

半導体ウェーハ周辺部の研磨装置及びその方法 Download PDF

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JP5386874B2
JP5386874B2 JP2008197159A JP2008197159A JP5386874B2 JP 5386874 B2 JP5386874 B2 JP 5386874B2 JP 2008197159 A JP2008197159 A JP 2008197159A JP 2008197159 A JP2008197159 A JP 2008197159A JP 5386874 B2 JP5386874 B2 JP 5386874B2
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polishing
wafer
roller
rotating
semiconductor wafer
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JP2010034429A (ja
JP2010034429A5 (https=
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哲也 角
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Sumco Corp
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Sumco Corp
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  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2008197159A 2008-07-31 2008-07-31 半導体ウェーハ周辺部の研磨装置及びその方法 Active JP5386874B2 (ja)

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JP2008197159A JP5386874B2 (ja) 2008-07-31 2008-07-31 半導体ウェーハ周辺部の研磨装置及びその方法

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JP2008197159A JP5386874B2 (ja) 2008-07-31 2008-07-31 半導体ウェーハ周辺部の研磨装置及びその方法

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JP2010034429A JP2010034429A (ja) 2010-02-12
JP2010034429A5 JP2010034429A5 (https=) 2011-09-15
JP5386874B2 true JP5386874B2 (ja) 2014-01-15

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2359390A1 (en) * 2008-11-19 2011-08-24 MEMC Electronic Materials, Inc. Method and system for stripping the edge of a semiconductor wafer
KR101089480B1 (ko) * 2010-06-01 2011-12-07 주식회사 엘지실트론 웨이퍼 연마장치

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04129656A (ja) * 1990-09-19 1992-04-30 Kawasaki Steel Corp 半導体ウエハの面取加工装置
JP3256808B2 (ja) * 1991-04-30 2002-02-18 東芝セラミックス株式会社 半導体ウエーハの周縁ポリシング装置
JP2542445Y2 (ja) * 1992-07-14 1997-07-30 信越半導体株式会社 バフ溝加工装置
JPH11297665A (ja) * 1998-04-06 1999-10-29 Takahiro Oishi ウエハ端面処理装置
JPH11300587A (ja) * 1998-04-15 1999-11-02 Mitsubishi Materials Corp 半導体ウエハー研磨装置
JP4743951B2 (ja) * 2000-11-13 2011-08-10 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体ウエハのノッチ部分の研磨装置及び研磨加工方法
JP2007248812A (ja) * 2006-03-16 2007-09-27 Bridgestone Corp 導電性ローラ
JP2008023603A (ja) * 2006-07-18 2008-02-07 Nippon Seimitsu Denshi Co Ltd ２層構造のリテーナリング

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