JP5383501B2 - 低エネルギーの高用量ヒ素、リン、ホウ素注入ウエハの安全な取り扱い - Google Patents

低エネルギーの高用量ヒ素、リン、ホウ素注入ウエハの安全な取り扱い Download PDF

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JP5383501B2
JP5383501B2 JP2009541642A JP2009541642A JP5383501B2 JP 5383501 B2 JP5383501 B2 JP 5383501B2 JP 2009541642 A JP2009541642 A JP 2009541642A JP 2009541642 A JP2009541642 A JP 2009541642A JP 5383501 B2 JP5383501 B2 JP 5383501B2
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layer
exposing
plasma
implanted
film
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JP2010514166A5 (cg-RX-API-DMAC10.html
JP2010514166A (ja
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マジード エー． フォード，
マノージ ヴェライカル，
カルティク サンタナム，
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Applied Materials Inc
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Applied Materials Inc
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    • H10P30/20—
    • H10P95/94—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H10P14/6304—
    • H10P14/6319—
    • H10P14/6336—
    • H10P14/6682—
    • H10P14/69215—
    • H10P32/1204—

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
JP2009541642A 2006-12-18 2007-12-18 低エネルギーの高用量ヒ素、リン、ホウ素注入ウエハの安全な取り扱い Expired - Fee Related JP5383501B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US87057506P 2006-12-18 2006-12-18
US60/870,575 2006-12-18
PCT/US2007/087894 WO2008077020A2 (en) 2006-12-18 2007-12-18 Safe handling of low energy, high dose arsenic, phosphorus, and boron implanted wafers

Publications (3)

Publication Number Publication Date
JP2010514166A JP2010514166A (ja) 2010-04-30
JP2010514166A5 JP2010514166A5 (cg-RX-API-DMAC10.html) 2010-12-09
JP5383501B2 true JP5383501B2 (ja) 2014-01-08

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JP2009541642A Expired - Fee Related JP5383501B2 (ja) 2006-12-18 2007-12-18 低エネルギーの高用量ヒ素、リン、ホウ素注入ウエハの安全な取り扱い

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US (3) US20080153271A1 (cg-RX-API-DMAC10.html)
JP (1) JP5383501B2 (cg-RX-API-DMAC10.html)
KR (1) KR101369993B1 (cg-RX-API-DMAC10.html)
CN (1) CN101548190A (cg-RX-API-DMAC10.html)
TW (1) TWI508142B (cg-RX-API-DMAC10.html)
WO (1) WO2008077020A2 (cg-RX-API-DMAC10.html)

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US7858503B2 (en) * 2009-02-06 2010-12-28 Applied Materials, Inc. Ion implanted substrate having capping layer and method
JP2013534712A (ja) * 2010-06-23 2013-09-05 東京エレクトロン株式会社 プラズマドーピング装置、プラズマドーピング方法、半導体素子の製造方法、および半導体素子
US8501605B2 (en) 2011-03-14 2013-08-06 Applied Materials, Inc. Methods and apparatus for conformal doping
WO2012154373A2 (en) * 2011-05-11 2012-11-15 Applied Materials, Inc. Surface dose retention of dopants by pre-amorphization and post-implant passivation treatments
WO2013164940A1 (ja) * 2012-05-01 2013-11-07 東京エレクトロン株式会社 被処理基体にドーパントを注入する方法、及びプラズマドーピング装置
KR102199525B1 (ko) 2014-05-30 2021-01-08 디디피 스페셜티 일렉트로닉 머티리얼즈 유에스 9 엘엘씨 다이아이소프로필아미노-다이실란의 합성 공정
FR3033079B1 (fr) * 2015-02-19 2018-04-27 Ion Beam Services Procede de passivation d'un substrat et machine pour la mise en oeuvre de ce procede
EP3513426A4 (en) * 2016-09-14 2020-06-10 Applied Materials, Inc. DEGASSING CHAMBER FOR ARSES AND RELATED PROCEDURES
US11501972B2 (en) * 2020-07-22 2022-11-15 Applied Materials, Inc. Sacrificial capping layer for passivation using plasma-based implant process
US12494251B2 (en) * 2022-08-26 2025-12-09 Micron Technology, Inc. Memory circuitry and method used in forming memory circuitry

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Also Published As

Publication number Publication date
US8927400B2 (en) 2015-01-06
KR20090100421A (ko) 2009-09-23
TW200834681A (en) 2008-08-16
WO2008077020A3 (en) 2008-08-28
US20080153271A1 (en) 2008-06-26
CN101548190A (zh) 2009-09-30
TWI508142B (zh) 2015-11-11
JP2010514166A (ja) 2010-04-30
KR101369993B1 (ko) 2014-03-06
US20140248759A1 (en) 2014-09-04
WO2008077020A2 (en) 2008-06-26
US20100173484A1 (en) 2010-07-08

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