JP5377839B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5377839B2
JP5377839B2 JP2007194010A JP2007194010A JP5377839B2 JP 5377839 B2 JP5377839 B2 JP 5377839B2 JP 2007194010 A JP2007194010 A JP 2007194010A JP 2007194010 A JP2007194010 A JP 2007194010A JP 5377839 B2 JP5377839 B2 JP 5377839B2
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Japan
Prior art keywords
layer
conductive layer
memory element
semiconductor
metal oxide
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JP2007194010A
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Japanese (ja)
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JP2008053701A5 (enExample
JP2008053701A (ja
Inventor
幹央 湯川
希 杉澤
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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JP2007194010A 2006-07-28 2007-07-26 半導体装置 Expired - Fee Related JP5377839B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007194010A JP5377839B2 (ja) 2006-07-28 2007-07-26 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006206685 2006-07-28
JP2006206685 2006-07-28
JP2007194010A JP5377839B2 (ja) 2006-07-28 2007-07-26 半導体装置

Related Child Applications (1)

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JP2013197741A Division JP5632945B2 (ja) 2006-07-28 2013-09-25 半導体装置

Publications (3)

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JP2008053701A JP2008053701A (ja) 2008-03-06
JP2008053701A5 JP2008053701A5 (enExample) 2010-08-12
JP5377839B2 true JP5377839B2 (ja) 2013-12-25

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JP2007194010A Expired - Fee Related JP5377839B2 (ja) 2006-07-28 2007-07-26 半導体装置

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JP (1) JP5377839B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010032602A1 (en) 2008-09-18 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4485605B2 (ja) * 2008-09-30 2010-06-23 パナソニック株式会社 抵抗変化素子の駆動方法、初期処理方法、及び不揮発性記憶装置
JP2021082653A (ja) * 2019-11-15 2021-05-27 富士通株式会社 スイッチ素子及びスイッチ素子の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6847047B2 (en) * 2002-11-04 2005-01-25 Advanced Micro Devices, Inc. Methods that facilitate control of memory arrays utilizing zener diode-like devices
JP4912671B2 (ja) * 2004-11-26 2012-04-11 株式会社半導体エネルギー研究所 半導体装置
JP4869613B2 (ja) * 2005-03-25 2012-02-08 株式会社半導体エネルギー研究所 記憶装置、及び記憶装置の作製方法
JP5201853B2 (ja) * 2006-03-10 2013-06-05 株式会社半導体エネルギー研究所 半導体装置

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JP2008053701A (ja) 2008-03-06

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