JP5368478B2 - レーザ生成プラズマ源の斜入射集光光学系 - Google Patents

レーザ生成プラズマ源の斜入射集光光学系 Download PDF

Info

Publication number
JP5368478B2
JP5368478B2 JP2010543446A JP2010543446A JP5368478B2 JP 5368478 B2 JP5368478 B2 JP 5368478B2 JP 2010543446 A JP2010543446 A JP 2010543446A JP 2010543446 A JP2010543446 A JP 2010543446A JP 5368478 B2 JP5368478 B2 JP 5368478B2
Authority
JP
Japan
Prior art keywords
axis
mirror
optical system
along
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010543446A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011512647A5 (enExample
JP2011512647A (ja
Inventor
ウォールヘッド，イアン
ツォッチ，ファビオ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Media Lario SRL
Original Assignee
Media Lario SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Media Lario SRL filed Critical Media Lario SRL
Publication of JP2011512647A publication Critical patent/JP2011512647A/ja
Publication of JP2011512647A5 publication Critical patent/JP2011512647A5/ja
Application granted granted Critical
Publication of JP5368478B2 publication Critical patent/JP5368478B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70166—Capillary or channel elements, e.g. nested extreme ultraviolet [EUV] mirrors or shells, optical fibers or light guides
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/067—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators using surface reflection, e.g. grazing incidence mirrors, gratings
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/061—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements characterised by a multilayer structure
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/064—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements having a curved surface
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/065—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements provided with cooling means
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/067—Construction details

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Nanotechnology (AREA)
  • General Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Environmental & Geological Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • X-Ray Techniques (AREA)
JP2010543446A 2008-01-28 2009-01-28 レーザ生成プラズマ源の斜入射集光光学系 Expired - Fee Related JP5368478B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP08001536.5 2008-01-28
EP08001536.5A EP2083328B1 (en) 2008-01-28 2008-01-28 Grazing incidence collector for laser produced plasma sources
PCT/EP2009/000539 WO2009095220A2 (en) 2008-01-28 2009-01-28 Grazing incidence collector for laser produced plasma sources

Publications (3)

Publication Number Publication Date
JP2011512647A JP2011512647A (ja) 2011-04-21
JP2011512647A5 JP2011512647A5 (enExample) 2012-03-15
JP5368478B2 true JP5368478B2 (ja) 2013-12-18

Family

ID=39766873

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010543446A Expired - Fee Related JP5368478B2 (ja) 2008-01-28 2009-01-28 レーザ生成プラズマ源の斜入射集光光学系

Country Status (5)

Country Link
US (1) US8411815B2 (enExample)
EP (1) EP2083328B1 (enExample)
JP (1) JP5368478B2 (enExample)
DE (1) DE112009000120T5 (enExample)
WO (1) WO2009095220A2 (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI457715B (zh) 2008-12-27 2014-10-21 Ushio Electric Inc Light source device
DE102009047712A1 (de) * 2009-12-09 2011-06-16 Carl Zeiss Smt Gmbh EUV-Lichtquelle für eine Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage
US8330131B2 (en) 2010-01-11 2012-12-11 Media Lario, S.R.L. Source-collector module with GIC mirror and LPP EUV light source
JP5093267B2 (ja) * 2010-03-11 2012-12-12 ウシオ電機株式会社 集光鏡アッセンブリおよびこの集光鏡アッセンブリを用いた極端紫外光光源装置
JP5670174B2 (ja) * 2010-03-18 2015-02-18 ギガフォトン株式会社 チャンバ装置および極端紫外光生成装置
US8587768B2 (en) 2010-04-05 2013-11-19 Media Lario S.R.L. EUV collector system with enhanced EUV radiation collection
US8810775B2 (en) * 2010-04-16 2014-08-19 Media Lario S.R.L. EUV mirror module with a nickel electroformed curved mirror
DE102010028655A1 (de) 2010-05-06 2011-11-10 Carl Zeiss Smt Gmbh EUV-Kollektor
US9057962B2 (en) * 2010-06-18 2015-06-16 Media Lario S.R.L. Source-collector module with GIC mirror and LPP EUV light source
US8686381B2 (en) * 2010-06-28 2014-04-01 Media Lario S.R.L. Source-collector module with GIC mirror and tin vapor LPP target system
US20120050706A1 (en) * 2010-08-30 2012-03-01 Media Lario S.R.L Source-collector module with GIC mirror and xenon ice EUV LPP target system
US8258485B2 (en) * 2010-08-30 2012-09-04 Media Lario Srl Source-collector module with GIC mirror and xenon liquid EUV LPP target system
US20120050707A1 (en) * 2010-08-30 2012-03-01 Media Lario S.R.L Source-collector module with GIC mirror and tin wire EUV LPP target system
US8344339B2 (en) 2010-08-30 2013-01-01 Media Lario S.R.L. Source-collector module with GIC mirror and tin rod EUV LPP target system
DE102010039965B4 (de) 2010-08-31 2019-04-25 Carl Zeiss Smt Gmbh EUV-Kollektor
CN102621815B (zh) * 2011-01-26 2016-12-21 Asml荷兰有限公司 用于光刻设备的反射光学部件及器件制造方法
NL2009352A (en) 2011-09-22 2013-03-25 Asml Netherlands Bv Radiation source.
NL2010274C2 (en) 2012-02-11 2015-02-26 Media Lario Srl Source-collector modules for euv lithography employing a gic mirror and a lpp source.
JP2013211517A (ja) * 2012-03-01 2013-10-10 Gigaphoton Inc Ｅｕｖ光集光装置
DE102012220465A1 (de) 2012-11-09 2014-05-15 Carl Zeiss Smt Gmbh EUV-Kollektor
EP2746850B1 (en) 2012-12-20 2015-03-18 USHIO Denki Kabushiki Kaisha Method of manufacturing mirror shells of a nested shells grazing incidence mirror
US8872143B2 (en) * 2013-03-14 2014-10-28 Asml Netherlands B.V. Target for laser produced plasma extreme ultraviolet light source
DE102014006265B4 (de) 2013-05-03 2017-08-24 Media Lario S.R.L. Sn-dampf-euv-llp-quellsystem für die euv-lithographie
US9585236B2 (en) 2013-05-03 2017-02-28 Media Lario Srl Sn vapor EUV LLP source system for EUV lithography
DE102013107192A1 (de) 2013-07-08 2015-01-08 Carl Zeiss Laser Optics Gmbh Reflektives optisches Element für streifenden Einfall im EUV-Wellenlängenbereich
IT202000017086A1 (it) * 2020-07-14 2022-01-14 Istituto Naz Di Astrofisica Procedimento per la realizzazione di elementi ottici per ottiche di telescopi utilizzabili in missioni spaziali

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6586757B2 (en) * 1997-05-12 2003-07-01 Cymer, Inc. Plasma focus light source with active and buffer gas control
US6566668B2 (en) * 1997-05-12 2003-05-20 Cymer, Inc. Plasma focus light source with tandem ellipsoidal mirror units
US6278764B1 (en) 1999-07-22 2001-08-21 The Regents Of The Unviersity Of California High efficiency replicated x-ray optics and fabrication method
US6831963B2 (en) * 2000-10-20 2004-12-14 University Of Central Florida EUV, XUV, and X-Ray wavelength sources created from laser plasma produced from liquid metal solutions
EP1152555A1 (en) 2000-05-03 2001-11-07 Media Lario S.r.L. Telescope mirror for high bandwidth free space optical data transmission
US7180081B2 (en) * 2000-06-09 2007-02-20 Cymer, Inc. Discharge produced plasma EUV light source
US7410265B2 (en) 2000-09-13 2008-08-12 Carl Zeiss Smt Ag Focusing-device for the radiation from a light source
US6633048B2 (en) 2001-05-03 2003-10-14 Northrop Grumman Corporation High output extreme ultraviolet source
US7916388B2 (en) * 2007-12-20 2011-03-29 Cymer, Inc. Drive laser for EUV light source
DE10158216A1 (de) 2001-11-28 2003-06-18 Carlos Alberto Valenzuela Spiegel, optisches Abbildungssystem und deren Verwendung
DE10214259A1 (de) * 2002-03-28 2003-10-23 Zeiss Carl Semiconductor Mfg Kollektoreinheit für Beleuchtungssysteme mit einer Wellenlänge <193 nm
CN1495528B (zh) * 2002-08-15 2011-10-12 Asml荷兰有限公司 光刻投射装置及用于所述装置中的反射器组件
AU2003266975A1 (en) * 2002-12-19 2004-07-14 Carl Zeiss Smt Ag Illumination system having a more efficient collector optic
US7217940B2 (en) * 2003-04-08 2007-05-15 Cymer, Inc. Collector for EUV light source
US7075713B2 (en) * 2003-05-05 2006-07-11 University Of Central Florida Research Foundation High efficiency collector for laser plasma EUV source
US6841322B1 (en) 2003-06-30 2005-01-11 Intel Corporation Detecting erosion in collector optics with plasma sources in extreme ultraviolet (EUV) lithography systems
US7230258B2 (en) 2003-07-24 2007-06-12 Intel Corporation Plasma-based debris mitigation for extreme ultraviolet (EUV) light source
FR2860385B1 (fr) * 2003-09-26 2007-06-01 Cit Alcatel Source euv
JP4584261B2 (ja) 2003-11-25 2010-11-17 メディア ラリオ ソシエタ ア レスポンサビリタ リミタータ 電鋳による冷却および熱交換システムの製造
US7423275B2 (en) 2004-01-15 2008-09-09 Intel Corporation Erosion mitigation for collector optics using electric and magnetic fields
US7164144B2 (en) 2004-03-10 2007-01-16 Cymer Inc. EUV light source
US7196342B2 (en) * 2004-03-10 2007-03-27 Cymer, Inc. Systems and methods for reducing the influence of plasma-generated debris on the internal components of an EUV light source
US7483223B2 (en) * 2004-05-06 2009-01-27 Carl Zeiss Smt Ag Optical component having an improved transient thermal behavior and method for improving the transient thermal behavior of an optical component
FR2871622B1 (fr) * 2004-06-14 2008-09-12 Commissariat Energie Atomique Dispositif de generation de lumiere dans l'extreme ultraviolet et application a une source de lithographie par rayonnement dans l'extreme ultraviolet
US7868304B2 (en) * 2005-02-07 2011-01-11 Asml Netherlands B.V. Method for removal of deposition on an optical element, lithographic apparatus, device manufacturing method, and device manufactured thereby
DE102005014433B3 (de) * 2005-03-24 2006-10-05 Xtreme Technologies Gmbh Verfahren und Anordnung zur effizienten Erzeugung von kurzwelliger Strahlung auf Basis eines lasererzeugten Plasmas
DE102005052257B4 (de) 2005-11-02 2013-11-14 Symrise Ag Verfahren zur Herstellung von C1-C8-Alkancarbonsäure-C1-C4-alkylestern
DE102005053415A1 (de) * 2005-11-04 2007-05-10 Carl Zeiss Laser Optics Gmbh Optisches Bauelement mit verbessertem thermischen Verhalten
US7372049B2 (en) * 2005-12-02 2008-05-13 Asml Netherlands B.V. Lithographic apparatus including a cleaning device and method for cleaning an optical element
DE102006027856B3 (de) * 2006-06-13 2007-11-22 Xtreme Technologies Gmbh Anordnung zur Erzeugung von extrem ultravioletter Strahlung mittels elektrischer Entladung an regenerierbaren Elektroden
EP1882984B1 (en) * 2006-07-28 2011-10-12 Media Lario s.r.l. Multi-reflection optical systems and their fabrication
TW200808134A (en) * 2006-07-28 2008-02-01 Ushio Electric Inc Light source device for producing extreme ultraviolet radiation and method of generating extreme ultraviolet radiation
EP1901126B1 (en) * 2006-09-15 2011-10-12 Media Lario s.r.l. A collector optical system
WO2008043577A1 (en) * 2006-10-13 2008-04-17 Media Lario S.R.L. Coated mirrors and their fabication

Also Published As

Publication number Publication date
US20100303199A1 (en) 2010-12-02
WO2009095220A2 (en) 2009-08-06
JP2011512647A (ja) 2011-04-21
EP2083328B1 (en) 2013-06-19
US8411815B2 (en) 2013-04-02
DE112009000120T5 (de) 2011-03-17
WO2009095220A3 (en) 2009-11-26
EP2083328A1 (en) 2009-07-29

Similar Documents

Publication Publication Date Title
JP5368478B2 (ja) レーザ生成プラズマ源の斜入射集光光学系
US7843632B2 (en) EUV optics
NL2014254B1 (en) Source-Collector modules for EUV lithography employing a GIC mirror and a LPP source.
JP5694784B2 (ja) Ｇｉｃミラー及びｌｐｐ・ｅｕｖ光源を備えた光源集光モジュール
JP5856382B2 (ja) Ｅｕｖの集光を強化したｅｕｖ集光器システム
JP5631049B2 (ja) ゾーン最適化ミラー及び同ミラーを用いた光学系
EP1882984B1 (en) Multi-reflection optical systems and their fabrication
WO2005091879A2 (en) Euv light source
KR20110015660A (ko) 방사 시스템, 방사선 콜렉터, 방사 빔 컨디셔닝 시스템, 방사 시스템용 스펙트럼 퓨리티 필터, 및 스펙트럼 퓨리티 필터 형성 방법
US7211810B2 (en) Method for the protection of an optical element, lithographic apparatus, and device manufacturing method
JP4799620B2 (ja) 放射システムおよびリソグラフィ装置
JP2010506224A (ja) コーティングされたミラー及びその製造
WO2004090957A1 (ja) 光源ユニット、照明光学装置、露光装置および露光方法
JP2005294087A (ja) 光源ユニット、照明光学装置、露光装置および露光方法
US12028958B2 (en) High-brightness laser produced plasma source and method of generation and collection radiation
WO2023079042A1 (en) High-brightness laser produced plasma source and method of generating and collecting radiation
JP6926227B2 (ja) 極端紫外光生成装置及び電子デバイスの製造方法
Kubiak et al. High‐power laser plasma sources: Soft x‐ray projection lithography and other applications
CN118140598A (zh) 高亮度激光等离子体光源及产生和收集辐射的方法
Tichenor et al. Application of laser plasma sources in soft x-ray projection lithography

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120124

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120124

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20121227

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130129

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130412

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130514

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130719

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130903

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130912

R150 Certificate of patent or registration of utility model

Ref document number: 5368478

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees