JP5366080B2 - 発光素子形成用複合基板、発光ダイオード素子、その製造方法 - Google Patents

発光素子形成用複合基板、発光ダイオード素子、その製造方法 Download PDF

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JP5366080B2
JP5366080B2 JP2009049922A JP2009049922A JP5366080B2 JP 5366080 B2 JP5366080 B2 JP 5366080B2 JP 2009049922 A JP2009049922 A JP 2009049922A JP 2009049922 A JP2009049922 A JP 2009049922A JP 5366080 B2 JP5366080 B2 JP 5366080B2
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layer
gas
substrate
forming
light
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JP2010205937A5 (https=
JP2010205937A (ja
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泰之 市薗
秀樹 平山
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Ube Corp
RIKEN
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Ube Industries Ltd
RIKEN
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JP2009049922A 2009-03-03 2009-03-03 発光素子形成用複合基板、発光ダイオード素子、その製造方法 Expired - Fee Related JP5366080B2 (ja)

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JP2009049922A JP5366080B2 (ja) 2009-03-03 2009-03-03 発光素子形成用複合基板、発光ダイオード素子、その製造方法

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JP2009049922A JP5366080B2 (ja) 2009-03-03 2009-03-03 発光素子形成用複合基板、発光ダイオード素子、その製造方法

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JP2010205937A JP2010205937A (ja) 2010-09-16
JP2010205937A5 JP2010205937A5 (https=) 2012-03-15
JP5366080B2 true JP5366080B2 (ja) 2013-12-11

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Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003086840A (ja) * 2001-09-10 2003-03-20 Mitsubishi Cable Ind Ltd ＧａＮ系半導体発光ダイオード
JP4269645B2 (ja) * 2001-11-05 2009-05-27 日亜化学工業株式会社 付活剤を含有した基板を用いた窒化物半導体ｌｅｄ素子、及び成長方法

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