JP5354884B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5354884B2
JP5354884B2 JP2007268777A JP2007268777A JP5354884B2 JP 5354884 B2 JP5354884 B2 JP 5354884B2 JP 2007268777 A JP2007268777 A JP 2007268777A JP 2007268777 A JP2007268777 A JP 2007268777A JP 5354884 B2 JP5354884 B2 JP 5354884B2
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layer
substrate
electrode layer
electrode
insulating layer
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JP2007268777A
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Japanese (ja)
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JP2008124448A (ja
JP2008124448A5 (https=
Inventor
亮二 野村
貴章 永田
直人 楠本
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
JP2007268777A 2006-10-19 2007-10-16 半導体装置の作製方法 Expired - Fee Related JP5354884B2 (ja)

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JP2007268777A JP5354884B2 (ja) 2006-10-19 2007-10-16 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006285378 2006-10-19
JP2006285378 2006-10-19
JP2007268777A JP5354884B2 (ja) 2006-10-19 2007-10-16 半導体装置の作製方法

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JP2008124448A JP2008124448A (ja) 2008-05-29
JP2008124448A5 JP2008124448A5 (https=) 2010-09-30
JP5354884B2 true JP5354884B2 (ja) 2013-11-27

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JP2007268777A Expired - Fee Related JP5354884B2 (ja) 2006-10-19 2007-10-16 半導体装置の作製方法

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5042163B2 (ja) * 2008-08-20 2012-10-03 株式会社半導体エネルギー研究所 発光装置の作製方法
EP2178133B1 (en) * 2008-10-16 2019-09-18 Semiconductor Energy Laboratory Co., Ltd. Flexible Light-Emitting Device, Electronic Device, and Method for Manufacturing Flexible-Light Emitting Device
TWI607670B (zh) 2009-01-08 2017-12-01 半導體能源研究所股份有限公司 發光裝置及電子裝置
JP5523510B2 (ja) * 2012-07-10 2014-06-18 株式会社半導体エネルギー研究所 発光装置の作製方法
JP5802302B2 (ja) * 2014-04-08 2015-10-28 株式会社半導体エネルギー研究所 発光装置の作製方法
EP3864388B1 (en) * 2018-10-10 2024-10-09 JOANNEUM RESEARCH Forschungsgesellschaft mbH Piezoelectric sensor
CN115585849B (zh) * 2022-11-06 2025-05-27 浙江工业大学 一种基于钼及其氧化物的纳米团簇点阵的柔性温湿度传感器及其应用

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3253740B2 (ja) * 1993-04-05 2002-02-04 パイオニア株式会社 有機エレクトロルミネッセンス素子
JP3674973B2 (ja) * 1995-02-08 2005-07-27 住友化学株式会社 有機エレクトロルミネッセンス素子
JPH0935871A (ja) * 1995-07-24 1997-02-07 Sumitomo Chem Co Ltd 有機エレクトロルミネッセンス素子
JP4345278B2 (ja) * 2001-09-14 2009-10-14 セイコーエプソン株式会社 パターニング方法、膜形成方法、パターニング装置、有機エレクトロルミネッセンス素子の製造方法、カラーフィルタの製造方法、電気光学装置の製造方法、及び電子装置の製造方法
JP2004349543A (ja) * 2003-05-23 2004-12-09 Seiko Epson Corp 積層体の剥離方法、薄膜装置の製造法、薄膜装置、電子機器
JP2005085705A (ja) * 2003-09-10 2005-03-31 Seiko Epson Corp 電気デバイス及びその製造方法、電子機器
JP2005136324A (ja) * 2003-10-31 2005-05-26 Osaka Kyoiku Univ 不揮発性メモリ及び消去方法
US7199394B2 (en) * 2004-08-17 2007-04-03 Spansion Llc Polymer memory device with variable period of retention time
JP2006165535A (ja) * 2004-11-11 2006-06-22 Semiconductor Energy Lab Co Ltd 半導体装置
KR100990291B1 (ko) * 2004-12-28 2010-10-26 삼성전자주식회사 덴드리머를 이용하는 메모리소자

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JP2008124448A (ja) 2008-05-29

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