JP5340076B2 - 有機発光素子 - Google Patents
有機発光素子 Download PDFInfo
- Publication number
- JP5340076B2 JP5340076B2 JP2009188535A JP2009188535A JP5340076B2 JP 5340076 B2 JP5340076 B2 JP 5340076B2 JP 2009188535 A JP2009188535 A JP 2009188535A JP 2009188535 A JP2009188535 A JP 2009188535A JP 5340076 B2 JP5340076 B2 JP 5340076B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- cathode electrode
- light emitting
- emitting device
- organic light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910044991 metal oxide Inorganic materials 0.000 claims description 65
- 150000004706 metal oxides Chemical class 0.000 claims description 65
- 239000010410 layer Substances 0.000 claims description 64
- 239000012044 organic layer Substances 0.000 claims description 49
- 238000000034 method Methods 0.000 claims description 44
- 239000002184 metal Substances 0.000 claims description 38
- 229910052751 metal Inorganic materials 0.000 claims description 35
- 238000000151 deposition Methods 0.000 claims description 32
- 229910003437 indium oxide Inorganic materials 0.000 claims description 28
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 28
- 238000010884 ion-beam technique Methods 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 23
- 150000002500 ions Chemical class 0.000 claims description 22
- 230000008021 deposition Effects 0.000 claims description 21
- 238000007735 ion beam assisted deposition Methods 0.000 claims description 21
- 229910052791 calcium Inorganic materials 0.000 claims description 18
- 229910052746 lanthanum Inorganic materials 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 238000002207 thermal evaporation Methods 0.000 claims description 16
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 238000007740 vapor deposition Methods 0.000 claims description 11
- 239000012298 atmosphere Substances 0.000 claims description 10
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 9
- 229910052786 argon Inorganic materials 0.000 claims description 8
- 229910052788 barium Inorganic materials 0.000 claims description 8
- 229910052792 caesium Inorganic materials 0.000 claims description 8
- 239000011159 matrix material Substances 0.000 claims description 8
- 229910052712 strontium Inorganic materials 0.000 claims description 8
- 229910052727 yttrium Inorganic materials 0.000 claims description 8
- 238000002834 transmittance Methods 0.000 claims description 7
- 230000007423 decrease Effects 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 239000010408 film Substances 0.000 description 23
- 239000011575 calcium Substances 0.000 description 19
- 239000000463 material Substances 0.000 description 15
- 238000001704 evaporation Methods 0.000 description 12
- 230000008020 evaporation Effects 0.000 description 11
- 239000011521 glass Substances 0.000 description 11
- 239000002245 particle Substances 0.000 description 11
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 7
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 239000000292 calcium oxide Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 239000011368 organic material Substances 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 4
- 230000005525 hole transport Effects 0.000 description 4
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 4
- -1 poly (ethylenedioxy) thiophene Polymers 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- MBPCKEZNJVJYTC-UHFFFAOYSA-N 4-[4-(n-phenylanilino)phenyl]aniline Chemical compound C1=CC(N)=CC=C1C1=CC=C(N(C=2C=CC=CC=2)C=2C=CC=CC=2)C=C1 MBPCKEZNJVJYTC-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- SPDPTFAJSFKAMT-UHFFFAOYSA-N 1-n-[4-[4-(n-[4-(3-methyl-n-(3-methylphenyl)anilino)phenyl]anilino)phenyl]phenyl]-4-n,4-n-bis(3-methylphenyl)-1-n-phenylbenzene-1,4-diamine Chemical compound CC1=CC=CC(N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N(C=2C=C(C)C=CC=2)C=2C=C(C)C=CC=2)C=2C=C(C)C=CC=2)=C1 SPDPTFAJSFKAMT-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- IIBMYPDGXHFYRT-UHFFFAOYSA-N 1-N-[4-(4-aminophenyl)phenyl]-4-N,4-N-bis(3-methylphenyl)benzene-1,4-diamine Chemical compound C1(=CC(=CC=C1)N(C1=CC=C(C=C1)NC1=CC=C(C=C1)C1=CC=C(C=C1)N)C=1C=C(C=CC=1)C)C IIBMYPDGXHFYRT-UHFFFAOYSA-N 0.000 description 1
- YOZHUJDVYMRYDM-UHFFFAOYSA-N 4-(4-anilinophenyl)-3-naphthalen-1-yl-n-phenylaniline Chemical compound C=1C=C(C=2C(=CC(NC=3C=CC=CC=3)=CC=2)C=2C3=CC=CC=C3C=CC=2)C=CC=1NC1=CC=CC=C1 YOZHUJDVYMRYDM-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- KOPBYBDAPCDYFK-UHFFFAOYSA-N caesium oxide Chemical compound [O-2].[Cs+].[Cs+] KOPBYBDAPCDYFK-UHFFFAOYSA-N 0.000 description 1
- 229910001942 caesium oxide Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80524—Transparent cathodes, e.g. comprising thin metal layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3031—Two-side emission, e.g. transparent OLEDs [TOLED]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/917—Electroluminescent
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
Description
実施例1と同一に、ガラス基板上に、ITO 1,500Å/DNTPD 400Å/NPB 150Å/DSA+5%DSAアミン300Å/Bebq2 100Å/LiF 10Å/Al 1,500Åが順に積層された有機発光素子を製作した。これを比較サンプル1とする。
前記比較例1及び実施例1の有機発光素子の電流−電圧特性をKeithley238 source−measure unitを利用して評価し、実施例1の有機発光素子(サンプル1)が比較例1の有機発光素子(比較サンプル1)に比べ、電流密度特性及び効率特性に優れるということが分かる。
41 ソース電極
42 ゲート電極
43 ドレイン電極
44 活性層
50 キャパシタ
51 第1キャパシタ電極
52 第2キャパシタ電極
60 有機発光素子
61 アノード電極
62 カソード電極
62a 第2領域
62b 第1領域
63 有機層
64 画素開口部
65,85 保護層
67 キャッピング層
81,91 基板
82 バッファ層
83 ゲート絶縁膜
83a,84a コンタクトホール
84 中間絶縁膜
86 画素定義膜
92 粒子
93 イオン
95 ビームソース
97 蒸発源
Claims (16)
- アノード電極と、
前記アノード電極上に備えられた発光層を含む有機層と、
前記有機層上に備わり、前記有機層の発光層から発光された光が透過するカソード電極とを含み、
前記カソード電極は、前記有機層上から順次に平行に位置する第1領域及び第2領域からなり、前記第1領域及び前記第2領域は、酸化インジウムマトリックスに金属酸化物がドーピングされて形成され、前記第1領域の金属酸化物のドーピング濃度が第2領域よりも大きく、第1領域の金属酸化物は、濃度勾配を有するように含まれており、前記第1領域と前記第2領域との境界面での金属酸化物の濃度は、連続的であり、
前記金属酸化物での金属がCs、Ca、Sr、Ba、Y、Laまたはランタン系元素であり、
前記カソード電極において、前記第1領域及び前記第2領域の厚さをそれぞれ調整して、これら領域の境界面の位置を設定することを特徴とする有機発光素子。 - 前記第1領域で、前記有機層との距離に対する前記金属酸化物のドーピング濃度の関数が、線形関係であることを特徴とする請求項1に記載の有機発光素子。
- 前記カソード電極の第1領域の厚さが5〜50nmであることを特徴とする請求項1に記載の有機発光素子。
- 前記カソード電極の第2領域の厚さが50〜200nmであることを特徴とする請求項1に記載の有機発光素子。
- 前記カソード電極全体の厚さが70〜200nmであることを特徴とする請求項1に記載の有機発光素子。
- 前記カソード電極の第1領域の仕事関数が3.6ないし4.7eVであることを特徴とする請求項1に記載の有機発光素子。
- 前記カソード電極の第2領域の抵抗が抵抗率2.5ないし4.5Ω・cmであることを特徴とする請求項1に記載の有機発光素子。
- 前記カソード電極の透光度が80〜95%であることを特徴とする請求項1に記載の有機発光素子。
- 基板上にアノード電極を形成する段階と、
アノード電極上に発光層を含む有機層を形成する段階と、
前記有機層上にカソード電極を形成する段階とを含み、
前記カソード電極を形成する段階は、チャンバ内にプラズマを形成させた状態で、金属酸化物と酸化インジウムとを熱蒸着させ、酸化インジウムに金属酸化物がドーピングされた透明導電層を形成する段階であり、まず、グラデーション蒸着方式によって、金属酸化物のドーピング量が減少するように調節して第1領域を形成した後、その後、該金属酸化物のドーピング量を一定に固定して蒸着し、第2領域を形成する段階を含み、前記第1領域及び前記第2領域を有機層上から順に平行した層に形成させ、
前記金属酸化物での金属がCs、Ca、Sr、Ba、Y、Laまたはランタン系元素であり、
前記カソード電極において、前記第1領域及び前記第2領域の厚さをそれぞれ調整して、これら領域の境界面の位置を設定することを特徴とする有機発光素子の製造方法。 - 前記カソード電極を形成する段階は、金属とインジウムとをソースとして、酸素雰囲気で熱蒸着する段階であることを特徴とする請求項9に記載の有機発光素子の製造方法。
- 前記カソード電極を形成する段階は、金属と酸化インジウムとをソースとして、酸素及びアルゴンが混合された雰囲気で熱蒸着する段階であることを特徴とする請求項9に記載の有機発光素子の製造方法。
- 前記熱蒸着は、前記基板の温度が100℃以下で行われることを特徴とする請求項9に記載の有機発光素子の製造方法。
- 前記カソード電極を形成する段階での真空熱蒸着が、イオンビーム補助蒸着法(IBAD)を利用して蒸着されることを特徴とする請求項9に記載の有機発光素子の製造方法。
- 前記イオンビーム補助蒸着法で使われたイオンビームソースから放出されるイオンが、不活性原子のイオンであることを特徴とする請求項13に記載の有機発光素子の製造方法。
- 前記イオンビーム補助蒸着法で使われたイオンビームソースのエネルギーが、50eVないし200eVであることを特徴とする請求項14に記載の有機発光素子の製造方法。
- 前記金属がCs、Ca、Sr、Ba、Y、Laまたはランタン系元素であることを特徴とする請求項9に記載の有機発光素子の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2008-0081363 | 2008-08-20 | ||
KR1020080081363A KR100994116B1 (ko) | 2008-08-20 | 2008-08-20 | 유기 발광 소자 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010050095A JP2010050095A (ja) | 2010-03-04 |
JP5340076B2 true JP5340076B2 (ja) | 2013-11-13 |
Family
ID=41226902
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009188535A Expired - Fee Related JP5340076B2 (ja) | 2008-08-20 | 2009-08-17 | 有機発光素子 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8125140B2 (ja) |
EP (1) | EP2157611A3 (ja) |
JP (1) | JP5340076B2 (ja) |
KR (1) | KR100994116B1 (ja) |
CN (1) | CN101656264A (ja) |
TW (1) | TWI408995B (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101191645B1 (ko) | 2009-11-25 | 2012-10-17 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
TWI555436B (zh) * | 2011-04-08 | 2016-10-21 | 半導體能源研究所股份有限公司 | 發光裝置及其製造方法 |
KR101971102B1 (ko) * | 2011-04-20 | 2019-04-23 | 삼성디스플레이 주식회사 | 유기 전계 발광 장치 |
WO2013006946A1 (en) * | 2011-07-08 | 2013-01-17 | The Governors Of The University Of Alberta | Methods of tailoring electrode work function using interfacial modifiers for use in organic electronics |
KR101925540B1 (ko) * | 2011-08-04 | 2019-02-28 | 삼성디스플레이 주식회사 | 박막 트랜지스터 어레이 기판, 이를 포함하는 유기 발광 표시 장치 및 그 제조 방법 |
CN103165786A (zh) * | 2011-12-12 | 2013-06-19 | 展晶科技(深圳)有限公司 | 发光二极管晶粒及其制造方法 |
US9490441B2 (en) * | 2012-08-02 | 2016-11-08 | Sony Corporation | Semiconductor device, method of manufacturing semiconductor device, solid-state image pickup unit, and electronic apparatus |
CN104022229A (zh) * | 2014-05-30 | 2014-09-03 | 京东方科技集团股份有限公司 | Oled器件及其制备方法、显示装置 |
CN104716162B (zh) * | 2015-03-24 | 2018-04-10 | 京东方科技集团股份有限公司 | 一种有机发光二极管显示面板及其制作方法、显示装置 |
CN106067470B (zh) * | 2015-04-23 | 2019-11-22 | 乐金显示有限公司 | 有机发光显示设备 |
KR102366022B1 (ko) * | 2015-04-23 | 2022-02-25 | 엘지디스플레이 주식회사 | 유기발광표시장치 |
US9508955B2 (en) * | 2015-04-23 | 2016-11-29 | Lg Display Co., Ltd. | Organic light emitting display device |
KR102447308B1 (ko) * | 2015-05-28 | 2022-09-26 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
KR102453921B1 (ko) * | 2015-09-03 | 2022-10-13 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
CN111406306B (zh) * | 2017-12-01 | 2024-03-12 | 三菱电机株式会社 | 半导体装置的制造方法、半导体装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10125469A (ja) * | 1996-10-24 | 1998-05-15 | Tdk Corp | 有機el発光素子 |
EP0845924B1 (en) * | 1996-11-29 | 2003-07-16 | Idemitsu Kosan Company Limited | Organic electroluminescent device |
JPH1126169A (ja) * | 1997-07-04 | 1999-01-29 | Tdk Corp | 有機el素子およびその製造方法 |
JPH1187068A (ja) * | 1997-07-15 | 1999-03-30 | Tdk Corp | 有機el素子およびその製造方法 |
JP4717265B2 (ja) | 2001-06-08 | 2011-07-06 | 三星モバイルディスプレイ株式會社 | 有機el装置及びその製造方法 |
JP3785109B2 (ja) * | 2002-04-08 | 2006-06-14 | 日東電工株式会社 | 透明導電積層体の製造方法 |
KR100544120B1 (ko) | 2003-07-19 | 2006-01-23 | 삼성에스디아이 주식회사 | 전계발광소자 |
KR100527195B1 (ko) | 2003-07-25 | 2005-11-08 | 삼성에스디아이 주식회사 | 유기전계 발광표시장치 |
US7429822B2 (en) * | 2003-10-28 | 2008-09-30 | Sharp Kabushiki Kaisha | Organic electroluminescence device having a cathode with a metal layer that includes a first metal and a low work function metal |
JP2005310637A (ja) * | 2004-04-23 | 2005-11-04 | Canon Inc | 有機el素子 |
JP2006092867A (ja) * | 2004-09-22 | 2006-04-06 | Toshiba Corp | 有機エレクトロルミネッセンス表示装置 |
JP2008108423A (ja) | 2005-02-02 | 2008-05-08 | Takayuki Uchida | 酸化物透明導電膜およびアルカリ金属含有酸化物透明導電膜の成膜方法ならびにその酸化物透明導電膜を利用した有機光装置 |
KR100821068B1 (ko) * | 2006-05-16 | 2008-04-10 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시 장치 및 그 제조방법 |
KR100822217B1 (ko) * | 2007-04-10 | 2008-04-16 | 삼성에스디아이 주식회사 | 유기 발광 소자의 제조방법 및 이를 이용하여 제조된 유기발광 소자 |
KR100813854B1 (ko) * | 2007-04-23 | 2008-03-17 | 삼성에스디아이 주식회사 | 유기 발광 소자 및 그 제조방법 |
-
2008
- 2008-08-20 KR KR1020080081363A patent/KR100994116B1/ko not_active IP Right Cessation
-
2009
- 2009-08-17 JP JP2009188535A patent/JP5340076B2/ja not_active Expired - Fee Related
- 2009-08-18 CN CN200910165924A patent/CN101656264A/zh active Pending
- 2009-08-19 TW TW098127819A patent/TWI408995B/zh not_active IP Right Cessation
- 2009-08-19 US US12/544,210 patent/US8125140B2/en not_active Expired - Fee Related
- 2009-08-20 EP EP09252031A patent/EP2157611A3/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
KR20100022713A (ko) | 2010-03-03 |
JP2010050095A (ja) | 2010-03-04 |
EP2157611A2 (en) | 2010-02-24 |
KR100994116B1 (ko) | 2010-11-15 |
US8125140B2 (en) | 2012-02-28 |
US20100045176A1 (en) | 2010-02-25 |
TW201014454A (en) | 2010-04-01 |
CN101656264A (zh) | 2010-02-24 |
EP2157611A3 (en) | 2011-12-07 |
TWI408995B (zh) | 2013-09-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5340076B2 (ja) | 有機発光素子 | |
JP5124083B2 (ja) | 有機電界発光表示装置及びその製造方法 | |
JP5969450B2 (ja) | 有機発光ディスプレイ装置および有機発光ディスプレイ装置の製造方法 | |
US7902087B2 (en) | Organic electroluminescent display device and method of preparing the same | |
US8962382B2 (en) | Fabrication method for organic light emitting device and organic light emitting device fabricated by the same method | |
Chin | Effective hole transport layer structure for top-emitting organic light emitting devices based on laser transfer patterning | |
EP2375467A2 (en) | Organic light emitting diode display and method for manufacturing the same | |
KR100861640B1 (ko) | 유기발광소자의 제조방법 및 이에 의하여 제조된유기발광소자 | |
JP2011082173A (ja) | 有機発光素子 | |
US9159947B2 (en) | Organic light-emitting device | |
KR100615221B1 (ko) | 유기 전계 발광 표시 장치 및 이의 제조 방법 | |
KR100822217B1 (ko) | 유기 발광 소자의 제조방법 및 이를 이용하여 제조된 유기발광 소자 | |
KR100563066B1 (ko) | 유기 전계 발광 표시 장치 및 이의 제조 방법 | |
WO2000057446A1 (en) | High efficiency electrodes for organic light emitting diode devices | |
KR100553765B1 (ko) | 유기 전계 발광 표시 장치 및 이의 제조 방법 | |
KR100615223B1 (ko) | 유기 전계 발광 표시 장치 및 이의 제조 방법 | |
KR100637165B1 (ko) | 유기 전계 발광 표시 장치 및 이의 제조 방법 | |
CN113725376A (zh) | 有机电致发光器件、制作其的方法及显示面板 | |
JP2005071696A (ja) | 有機el素子 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110518 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110524 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110823 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120717 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20121003 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121017 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130319 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130618 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130709 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130806 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |