JP5331283B2 - プラズマの体積を制御する装置 - Google Patents
プラズマの体積を制御する装置 Download PDFInfo
- Publication number
- JP5331283B2 JP5331283B2 JP2001537767A JP2001537767A JP5331283B2 JP 5331283 B2 JP5331283 B2 JP 5331283B2 JP 2001537767 A JP2001537767 A JP 2001537767A JP 2001537767 A JP2001537767 A JP 2001537767A JP 5331283 B2 JP5331283 B2 JP 5331283B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- magnetic
- magnetic field
- processing chamber
- processing apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000012545 processing Methods 0.000 claims description 201
- 239000000758 substrate Substances 0.000 claims description 84
- 230000004907 flux Effects 0.000 claims description 45
- 238000000034 method Methods 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 27
- 230000008569 process Effects 0.000 claims description 19
- 239000006227 byproduct Substances 0.000 claims description 14
- 239000013598 vector Substances 0.000 claims description 8
- 230000008859 change Effects 0.000 claims description 2
- 239000010960 cold rolled steel Substances 0.000 claims description 2
- 230000035699 permeability Effects 0.000 claims description 2
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 claims 1
- 230000002265 prevention Effects 0.000 claims 1
- 210000002381 plasma Anatomy 0.000 description 235
- 239000007789 gas Substances 0.000 description 48
- 230000007935 neutral effect Effects 0.000 description 16
- 238000005530 etching Methods 0.000 description 12
- 230000006698 induction Effects 0.000 description 12
- 238000013461 design Methods 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 10
- 230000008901 benefit Effects 0.000 description 7
- 238000011109 contamination Methods 0.000 description 7
- 230000005684 electric field Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000000696 magnetic material Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 206010067484 Adverse reaction Diseases 0.000 description 1
- 229910052580 B4C Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000006838 adverse reaction Effects 0.000 description 1
- 229910000828 alnico Inorganic materials 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910001172 neodymium magnet Inorganic materials 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229910000938 samarium–cobalt magnet Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000012086 standard solution Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32688—Multi-cusp fields
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/439,759 US6322661B1 (en) | 1999-11-15 | 1999-11-15 | Method and apparatus for controlling the volume of a plasma |
| US09/439,759 | 1999-11-15 | ||
| PCT/US2000/042158 WO2001037311A2 (en) | 1999-11-15 | 2000-11-14 | Method and apparatus for controlling the volume of a plasma |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003514386A JP2003514386A (ja) | 2003-04-15 |
| JP2003514386A5 JP2003514386A5 (https=) | 2008-10-23 |
| JP5331283B2 true JP5331283B2 (ja) | 2013-10-30 |
Family
ID=23746030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001537767A Expired - Fee Related JP5331283B2 (ja) | 1999-11-15 | 2000-11-14 | プラズマの体積を制御する装置 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US6322661B1 (https=) |
| EP (1) | EP1230667B1 (https=) |
| JP (1) | JP5331283B2 (https=) |
| KR (1) | KR100778258B1 (https=) |
| CN (2) | CN1225005C (https=) |
| AT (1) | ATE420455T1 (https=) |
| AU (1) | AU3082201A (https=) |
| DE (1) | DE60041350D1 (https=) |
| TW (1) | TW530523B (https=) |
| WO (1) | WO2001037311A2 (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2575293Y2 (ja) | 1992-03-09 | 1998-06-25 | 豊政 與那覇 | 電線一括巻取装置 |
Families Citing this family (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6558504B1 (en) * | 1998-12-21 | 2003-05-06 | Research Triangle Institute | Plasma processing system and method |
| US6744213B2 (en) * | 1999-11-15 | 2004-06-01 | Lam Research Corporation | Antenna for producing uniform process rates |
| US6320320B1 (en) | 1999-11-15 | 2001-11-20 | Lam Research Corporation | Method and apparatus for producing uniform process rates |
| US6518705B2 (en) | 1999-11-15 | 2003-02-11 | Lam Research Corporation | Method and apparatus for producing uniform process rates |
| AU1606101A (en) * | 1999-11-15 | 2001-05-30 | Lam Research Corporation | Materials and gas chemistries for processing systems |
| US20020142612A1 (en) * | 2001-03-30 | 2002-10-03 | Han-Ming Wu | Shielding plate in plasma for uniformity improvement |
| US7374636B2 (en) * | 2001-07-06 | 2008-05-20 | Applied Materials, Inc. | Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactor |
| US7422654B2 (en) * | 2003-02-14 | 2008-09-09 | Applied Materials, Inc. | Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactor |
| KR100988085B1 (ko) * | 2003-06-24 | 2010-10-18 | 삼성전자주식회사 | 고밀도 플라즈마 처리 장치 |
| EP2087778A4 (en) | 2006-08-22 | 2010-11-17 | Mattson Tech Inc | INDUCTIVE PLASMA SOURCE WITH HIGH COUPLING EFFICIENCY |
| US8992725B2 (en) * | 2006-08-28 | 2015-03-31 | Mattson Technology, Inc. | Plasma reactor with inductie excitation of plasma and efficient removal of heat from the excitation coil |
| US8092605B2 (en) * | 2006-11-28 | 2012-01-10 | Applied Materials, Inc. | Magnetic confinement of a plasma |
| US7824519B2 (en) * | 2007-05-18 | 2010-11-02 | Lam Research Corporation | Variable volume plasma processing chamber and associated methods |
| MX350703B (es) | 2009-05-13 | 2017-09-14 | Sio2 Medical Products Inc | Metodo de gasificacion para inspeccionar una superficie revestida. |
| WO2013170052A1 (en) | 2012-05-09 | 2013-11-14 | Sio2 Medical Products, Inc. | Saccharide protective coating for pharmaceutical package |
| US9458536B2 (en) | 2009-07-02 | 2016-10-04 | Sio2 Medical Products, Inc. | PECVD coating methods for capped syringes, cartridges and other articles |
| WO2011022612A2 (en) * | 2009-08-21 | 2011-02-24 | Mattson Technology, Inc. | Inductive plasma source |
| JP5367522B2 (ja) | 2009-09-24 | 2013-12-11 | 東京エレクトロン株式会社 | プラズマ処理装置及びシャワーヘッド |
| US11624115B2 (en) | 2010-05-12 | 2023-04-11 | Sio2 Medical Products, Inc. | Syringe with PECVD lubrication |
| US9878101B2 (en) | 2010-11-12 | 2018-01-30 | Sio2 Medical Products, Inc. | Cyclic olefin polymer vessels and vessel coating methods |
| CN102573258B (zh) * | 2010-12-15 | 2014-11-05 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 感应耦合等离子体装置 |
| JP5661513B2 (ja) | 2011-03-03 | 2015-01-28 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US9272095B2 (en) | 2011-04-01 | 2016-03-01 | Sio2 Medical Products, Inc. | Vessels, contact surfaces, and coating and inspection apparatus and methods |
| JP5870568B2 (ja) * | 2011-05-12 | 2016-03-01 | 東京エレクトロン株式会社 | 成膜装置、プラズマ処理装置、成膜方法及び記憶媒体 |
| US11116695B2 (en) | 2011-11-11 | 2021-09-14 | Sio2 Medical Products, Inc. | Blood sample collection tube |
| EP2776603B1 (en) | 2011-11-11 | 2019-03-06 | SiO2 Medical Products, Inc. | PASSIVATION, pH PROTECTIVE OR LUBRICITY COATING FOR PHARMACEUTICAL PACKAGE, COATING PROCESS AND APPARATUS |
| US20150297800A1 (en) | 2012-07-03 | 2015-10-22 | Sio2 Medical Products, Inc. | SiOx BARRIER FOR PHARMACEUTICAL PACKAGE AND COATING PROCESS |
| CA2890066C (en) | 2012-11-01 | 2021-11-09 | Sio2 Medical Products, Inc. | Coating inspection method |
| US9903782B2 (en) | 2012-11-16 | 2018-02-27 | Sio2 Medical Products, Inc. | Method and apparatus for detecting rapid barrier coating integrity characteristics |
| US9764093B2 (en) | 2012-11-30 | 2017-09-19 | Sio2 Medical Products, Inc. | Controlling the uniformity of PECVD deposition |
| JP6382830B2 (ja) | 2012-11-30 | 2018-08-29 | エスアイオーツー・メディカル・プロダクツ・インコーポレイテッド | 医療シリンジ、カートリッジ等上でのpecvd堆積の均一性制御 |
| JP5939147B2 (ja) | 2012-12-14 | 2016-06-22 | 東京エレクトロン株式会社 | 成膜装置、基板処理装置及び成膜方法 |
| US9662450B2 (en) | 2013-03-01 | 2017-05-30 | Sio2 Medical Products, Inc. | Plasma or CVD pre-treatment for lubricated pharmaceutical package, coating process and apparatus |
| US9937099B2 (en) | 2013-03-11 | 2018-04-10 | Sio2 Medical Products, Inc. | Trilayer coated pharmaceutical packaging with low oxygen transmission rate |
| EP2971228B1 (en) | 2013-03-11 | 2023-06-21 | Si02 Medical Products, Inc. | Coated packaging |
| US20160017490A1 (en) | 2013-03-15 | 2016-01-21 | Sio2 Medical Products, Inc. | Coating method |
| WO2015148471A1 (en) | 2014-03-28 | 2015-10-01 | Sio2 Medical Products, Inc. | Antistatic coatings for plastic vessels |
| EP3337915B1 (en) | 2015-08-18 | 2021-11-03 | SiO2 Medical Products, Inc. | Pharmaceutical and other packaging with low oxygen transmission rate |
| US12374531B2 (en) * | 2020-09-25 | 2025-07-29 | Tokyo Electron Limited | Plasma processing apparatus |
| JP7607512B2 (ja) * | 2020-09-25 | 2024-12-27 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| CN113735632B (zh) * | 2021-09-03 | 2022-05-17 | 重庆大学 | 一种磁控式空气等离子体制备氮肥系统 |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5874084A (ja) * | 1981-10-29 | 1983-05-04 | Fujitsu Ltd | 半導体装置 |
| JPS6348826A (ja) * | 1986-08-19 | 1988-03-01 | Toshiba Corp | ドライエツチング装置 |
| KR920002864B1 (ko) * | 1987-07-20 | 1992-04-06 | 가부시기가이샤 히다찌세이사꾸쇼 | 플라즈마 처리방법 및 그 장치 |
| US5032205A (en) * | 1989-05-05 | 1991-07-16 | Wisconsin Alumni Research Foundation | Plasma etching apparatus with surface magnetic fields |
| US4990229A (en) | 1989-06-13 | 1991-02-05 | Plasma & Materials Technologies, Inc. | High density plasma deposition and etching apparatus |
| US5122251A (en) | 1989-06-13 | 1992-06-16 | Plasma & Materials Technologies, Inc. | High density plasma deposition and etching apparatus |
| US5429070A (en) | 1989-06-13 | 1995-07-04 | Plasma & Materials Technologies, Inc. | High density plasma deposition and etching apparatus |
| US5421891A (en) | 1989-06-13 | 1995-06-06 | Plasma & Materials Technologies, Inc. | High density plasma deposition and etching apparatus |
| US5091049A (en) | 1989-06-13 | 1992-02-25 | Plasma & Materials Technologies, Inc. | High density plasma deposition and etching apparatus |
| US4948458A (en) | 1989-08-14 | 1990-08-14 | Lam Research Corporation | Method and apparatus for producing magnetically-coupled planar plasma |
| JP3126405B2 (ja) * | 1991-04-30 | 2001-01-22 | 株式会社日立製作所 | スパッタデポジション装置 |
| US5226967A (en) | 1992-05-14 | 1993-07-13 | Lam Research Corporation | Plasma apparatus including dielectric window for inducing a uniform electric field in a plasma chamber |
| US5401350A (en) | 1993-03-08 | 1995-03-28 | Lsi Logic Corporation | Coil configurations for improved uniformity in inductively coupled plasma systems |
| US5484485A (en) * | 1993-10-29 | 1996-01-16 | Chapman; Robert A. | Plasma reactor with magnet for protecting an electrostatic chuck from the plasma |
| FR2715019B1 (fr) * | 1994-01-13 | 1996-04-05 | Plasmion | Dispositif pour former un plasma par application de micro-ondes afin de produire un faisceau d'ions. |
| JP3365067B2 (ja) | 1994-02-10 | 2003-01-08 | ソニー株式会社 | プラズマ装置およびこれを用いたプラズマ処理方法 |
| US5587038A (en) | 1994-06-16 | 1996-12-24 | Princeton University | Apparatus and process for producing high density axially extending plasmas |
| US5540800A (en) | 1994-06-23 | 1996-07-30 | Applied Materials, Inc. | Inductively coupled high density plasma reactor for plasma assisted materials processing |
| US5811022A (en) * | 1994-11-15 | 1998-09-22 | Mattson Technology, Inc. | Inductive plasma reactor |
| JP3585578B2 (ja) * | 1995-05-30 | 2004-11-04 | アネルバ株式会社 | プラズマ処理装置 |
| US5810932A (en) | 1995-11-22 | 1998-09-22 | Nec Corporation | Plasma generating apparatus used for fabrication of semiconductor device |
| TW303480B (en) * | 1996-01-24 | 1997-04-21 | Applied Materials Inc | Magnetically confined plasma reactor for processing a semiconductor wafer |
| US6054013A (en) | 1996-02-02 | 2000-04-25 | Applied Materials, Inc. | Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density |
| US5669975A (en) | 1996-03-27 | 1997-09-23 | Sony Corporation | Plasma producing method and apparatus including an inductively-coupled plasma source |
| US6048435A (en) * | 1996-07-03 | 2000-04-11 | Tegal Corporation | Plasma etch reactor and method for emerging films |
| US5824607A (en) * | 1997-02-06 | 1998-10-20 | Applied Materials, Inc. | Plasma confinement for an inductively coupled plasma reactor |
| US6189484B1 (en) | 1999-03-05 | 2001-02-20 | Applied Materials Inc. | Plasma reactor having a helicon wave high density plasma source |
| JP2001093699A (ja) * | 1999-09-22 | 2001-04-06 | Hitachi Kokusai Electric Inc | プラズマ処理装置 |
| US6341574B1 (en) | 1999-11-15 | 2002-01-29 | Lam Research Corporation | Plasma processing systems |
-
1999
- 1999-11-15 US US09/439,759 patent/US6322661B1/en not_active Expired - Lifetime
-
2000
- 2000-11-14 CN CNB008184089A patent/CN1225005C/zh not_active Expired - Lifetime
- 2000-11-14 AT AT00991021T patent/ATE420455T1/de not_active IP Right Cessation
- 2000-11-14 JP JP2001537767A patent/JP5331283B2/ja not_active Expired - Fee Related
- 2000-11-14 DE DE60041350T patent/DE60041350D1/de not_active Expired - Lifetime
- 2000-11-14 AU AU30822/01A patent/AU3082201A/en not_active Abandoned
- 2000-11-14 WO PCT/US2000/042158 patent/WO2001037311A2/en not_active Ceased
- 2000-11-14 CN CNB2005101036618A patent/CN100437897C/zh not_active Expired - Lifetime
- 2000-11-14 EP EP00991021A patent/EP1230667B1/en not_active Expired - Lifetime
- 2000-11-14 KR KR1020027006164A patent/KR100778258B1/ko not_active Expired - Lifetime
- 2000-11-15 TW TW089124198A patent/TW530523B/zh not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2575293Y2 (ja) | 1992-03-09 | 1998-06-25 | 豊政 與那覇 | 電線一括巻取装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1423828A (zh) | 2003-06-11 |
| AU3082201A (en) | 2001-05-30 |
| DE60041350D1 (de) | 2009-02-26 |
| EP1230667A2 (en) | 2002-08-14 |
| EP1230667B1 (en) | 2009-01-07 |
| JP2003514386A (ja) | 2003-04-15 |
| WO2001037311A3 (en) | 2001-10-11 |
| TW530523B (en) | 2003-05-01 |
| CN100437897C (zh) | 2008-11-26 |
| CN1225005C (zh) | 2005-10-26 |
| WO2001037311A2 (en) | 2001-05-25 |
| CN1747133A (zh) | 2006-03-15 |
| KR100778258B1 (ko) | 2007-11-22 |
| US6322661B1 (en) | 2001-11-27 |
| KR20020053854A (ko) | 2002-07-05 |
| ATE420455T1 (de) | 2009-01-15 |
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