CN1225005C - 用于控制等离子体体积的方法和设备 - Google Patents

用于控制等离子体体积的方法和设备 Download PDF

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Publication number
CN1225005C
CN1225005C CNB008184089A CN00818408A CN1225005C CN 1225005 C CN1225005 C CN 1225005C CN B008184089 A CNB008184089 A CN B008184089A CN 00818408 A CN00818408 A CN 00818408A CN 1225005 C CN1225005 C CN 1225005C
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CN
China
Prior art keywords
plasma
magnetic
magnetic field
processing
barrel
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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CNB008184089A
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English (en)
Chinese (zh)
Other versions
CN1423828A (zh
Inventor
A·D·拜利三世
A·M·舍普
N·布赖特
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Lam Research Corp
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Lam Research Corp
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Publication of CN1423828A publication Critical patent/CN1423828A/zh
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Publication of CN1225005C publication Critical patent/CN1225005C/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32688—Multi-cusp fields

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
CNB008184089A 1999-11-15 2000-11-14 用于控制等离子体体积的方法和设备 Expired - Lifetime CN1225005C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/439,759 US6322661B1 (en) 1999-11-15 1999-11-15 Method and apparatus for controlling the volume of a plasma
US09/439,759 1999-11-15

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CNB2005101036618A Division CN100437897C (zh) 1999-11-15 2000-11-14 用于控制等离子体体积的设备

Publications (2)

Publication Number Publication Date
CN1423828A CN1423828A (zh) 2003-06-11
CN1225005C true CN1225005C (zh) 2005-10-26

Family

ID=23746030

Family Applications (2)

Application Number Title Priority Date Filing Date
CNB008184089A Expired - Lifetime CN1225005C (zh) 1999-11-15 2000-11-14 用于控制等离子体体积的方法和设备
CNB2005101036618A Expired - Lifetime CN100437897C (zh) 1999-11-15 2000-11-14 用于控制等离子体体积的设备

Family Applications After (1)

Application Number Title Priority Date Filing Date
CNB2005101036618A Expired - Lifetime CN100437897C (zh) 1999-11-15 2000-11-14 用于控制等离子体体积的设备

Country Status (10)

Country Link
US (1) US6322661B1 (https=)
EP (1) EP1230667B1 (https=)
JP (1) JP5331283B2 (https=)
KR (1) KR100778258B1 (https=)
CN (2) CN1225005C (https=)
AT (1) ATE420455T1 (https=)
AU (1) AU3082201A (https=)
DE (1) DE60041350D1 (https=)
TW (1) TW530523B (https=)
WO (1) WO2001037311A2 (https=)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2575293Y2 (ja) 1992-03-09 1998-06-25 豊政 與那覇 電線一括巻取装置
US6558504B1 (en) * 1998-12-21 2003-05-06 Research Triangle Institute Plasma processing system and method
US6744213B2 (en) * 1999-11-15 2004-06-01 Lam Research Corporation Antenna for producing uniform process rates
US6320320B1 (en) 1999-11-15 2001-11-20 Lam Research Corporation Method and apparatus for producing uniform process rates
US6518705B2 (en) 1999-11-15 2003-02-11 Lam Research Corporation Method and apparatus for producing uniform process rates
AU1606101A (en) * 1999-11-15 2001-05-30 Lam Research Corporation Materials and gas chemistries for processing systems
US20020142612A1 (en) * 2001-03-30 2002-10-03 Han-Ming Wu Shielding plate in plasma for uniformity improvement
US7374636B2 (en) * 2001-07-06 2008-05-20 Applied Materials, Inc. Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactor
US7422654B2 (en) * 2003-02-14 2008-09-09 Applied Materials, Inc. Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactor
KR100988085B1 (ko) * 2003-06-24 2010-10-18 삼성전자주식회사 고밀도 플라즈마 처리 장치
EP2087778A4 (en) 2006-08-22 2010-11-17 Mattson Tech Inc INDUCTIVE PLASMA SOURCE WITH HIGH COUPLING EFFICIENCY
US8992725B2 (en) * 2006-08-28 2015-03-31 Mattson Technology, Inc. Plasma reactor with inductie excitation of plasma and efficient removal of heat from the excitation coil
US8092605B2 (en) * 2006-11-28 2012-01-10 Applied Materials, Inc. Magnetic confinement of a plasma
US7824519B2 (en) * 2007-05-18 2010-11-02 Lam Research Corporation Variable volume plasma processing chamber and associated methods
MX350703B (es) 2009-05-13 2017-09-14 Sio2 Medical Products Inc Metodo de gasificacion para inspeccionar una superficie revestida.
WO2013170052A1 (en) 2012-05-09 2013-11-14 Sio2 Medical Products, Inc. Saccharide protective coating for pharmaceutical package
US9458536B2 (en) 2009-07-02 2016-10-04 Sio2 Medical Products, Inc. PECVD coating methods for capped syringes, cartridges and other articles
WO2011022612A2 (en) * 2009-08-21 2011-02-24 Mattson Technology, Inc. Inductive plasma source
JP5367522B2 (ja) 2009-09-24 2013-12-11 東京エレクトロン株式会社 プラズマ処理装置及びシャワーヘッド
US11624115B2 (en) 2010-05-12 2023-04-11 Sio2 Medical Products, Inc. Syringe with PECVD lubrication
US9878101B2 (en) 2010-11-12 2018-01-30 Sio2 Medical Products, Inc. Cyclic olefin polymer vessels and vessel coating methods
CN102573258B (zh) * 2010-12-15 2014-11-05 北京北方微电子基地设备工艺研究中心有限责任公司 感应耦合等离子体装置
JP5661513B2 (ja) 2011-03-03 2015-01-28 東京エレクトロン株式会社 プラズマ処理装置
US9272095B2 (en) 2011-04-01 2016-03-01 Sio2 Medical Products, Inc. Vessels, contact surfaces, and coating and inspection apparatus and methods
JP5870568B2 (ja) * 2011-05-12 2016-03-01 東京エレクトロン株式会社 成膜装置、プラズマ処理装置、成膜方法及び記憶媒体
US11116695B2 (en) 2011-11-11 2021-09-14 Sio2 Medical Products, Inc. Blood sample collection tube
EP2776603B1 (en) 2011-11-11 2019-03-06 SiO2 Medical Products, Inc. PASSIVATION, pH PROTECTIVE OR LUBRICITY COATING FOR PHARMACEUTICAL PACKAGE, COATING PROCESS AND APPARATUS
US20150297800A1 (en) 2012-07-03 2015-10-22 Sio2 Medical Products, Inc. SiOx BARRIER FOR PHARMACEUTICAL PACKAGE AND COATING PROCESS
CA2890066C (en) 2012-11-01 2021-11-09 Sio2 Medical Products, Inc. Coating inspection method
US9903782B2 (en) 2012-11-16 2018-02-27 Sio2 Medical Products, Inc. Method and apparatus for detecting rapid barrier coating integrity characteristics
US9764093B2 (en) 2012-11-30 2017-09-19 Sio2 Medical Products, Inc. Controlling the uniformity of PECVD deposition
JP6382830B2 (ja) 2012-11-30 2018-08-29 エスアイオーツー・メディカル・プロダクツ・インコーポレイテッド 医療シリンジ、カートリッジ等上でのｐｅｃｖｄ堆積の均一性制御
JP5939147B2 (ja) 2012-12-14 2016-06-22 東京エレクトロン株式会社 成膜装置、基板処理装置及び成膜方法
US9662450B2 (en) 2013-03-01 2017-05-30 Sio2 Medical Products, Inc. Plasma or CVD pre-treatment for lubricated pharmaceutical package, coating process and apparatus
US9937099B2 (en) 2013-03-11 2018-04-10 Sio2 Medical Products, Inc. Trilayer coated pharmaceutical packaging with low oxygen transmission rate
EP2971228B1 (en) 2013-03-11 2023-06-21 Si02 Medical Products, Inc. Coated packaging
US20160017490A1 (en) 2013-03-15 2016-01-21 Sio2 Medical Products, Inc. Coating method
WO2015148471A1 (en) 2014-03-28 2015-10-01 Sio2 Medical Products, Inc. Antistatic coatings for plastic vessels
EP3337915B1 (en) 2015-08-18 2021-11-03 SiO2 Medical Products, Inc. Pharmaceutical and other packaging with low oxygen transmission rate
US12374531B2 (en) * 2020-09-25 2025-07-29 Tokyo Electron Limited Plasma processing apparatus
JP7607512B2 (ja) * 2020-09-25 2024-12-27 東京エレクトロン株式会社 プラズマ処理装置
CN113735632B (zh) * 2021-09-03 2022-05-17 重庆大学 一种磁控式空气等离子体制备氮肥系统

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5874084A (ja) * 1981-10-29 1983-05-04 Fujitsu Ltd 半導体装置
JPS6348826A (ja) * 1986-08-19 1988-03-01 Toshiba Corp ドライエツチング装置
KR920002864B1 (ko) * 1987-07-20 1992-04-06 가부시기가이샤 히다찌세이사꾸쇼 플라즈마 처리방법 및 그 장치
US5032205A (en) * 1989-05-05 1991-07-16 Wisconsin Alumni Research Foundation Plasma etching apparatus with surface magnetic fields
US4990229A (en) 1989-06-13 1991-02-05 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US5122251A (en) 1989-06-13 1992-06-16 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US5429070A (en) 1989-06-13 1995-07-04 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US5421891A (en) 1989-06-13 1995-06-06 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US5091049A (en) 1989-06-13 1992-02-25 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US4948458A (en) 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
JP3126405B2 (ja) * 1991-04-30 2001-01-22 株式会社日立製作所 スパッタデポジション装置
US5226967A (en) 1992-05-14 1993-07-13 Lam Research Corporation Plasma apparatus including dielectric window for inducing a uniform electric field in a plasma chamber
US5401350A (en) 1993-03-08 1995-03-28 Lsi Logic Corporation Coil configurations for improved uniformity in inductively coupled plasma systems
US5484485A (en) * 1993-10-29 1996-01-16 Chapman; Robert A. Plasma reactor with magnet for protecting an electrostatic chuck from the plasma
FR2715019B1 (fr) * 1994-01-13 1996-04-05 Plasmion Dispositif pour former un plasma par application de micro-ondes afin de produire un faisceau d'ions.
JP3365067B2 (ja) 1994-02-10 2003-01-08 ソニー株式会社 プラズマ装置およびこれを用いたプラズマ処理方法
US5587038A (en) 1994-06-16 1996-12-24 Princeton University Apparatus and process for producing high density axially extending plasmas
US5540800A (en) 1994-06-23 1996-07-30 Applied Materials, Inc. Inductively coupled high density plasma reactor for plasma assisted materials processing
US5811022A (en) * 1994-11-15 1998-09-22 Mattson Technology, Inc. Inductive plasma reactor
JP3585578B2 (ja) * 1995-05-30 2004-11-04 アネルバ株式会社 プラズマ処理装置
US5810932A (en) 1995-11-22 1998-09-22 Nec Corporation Plasma generating apparatus used for fabrication of semiconductor device
TW303480B (en) * 1996-01-24 1997-04-21 Applied Materials Inc Magnetically confined plasma reactor for processing a semiconductor wafer
US6054013A (en) 1996-02-02 2000-04-25 Applied Materials, Inc. Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density
US5669975A (en) 1996-03-27 1997-09-23 Sony Corporation Plasma producing method and apparatus including an inductively-coupled plasma source
US6048435A (en) * 1996-07-03 2000-04-11 Tegal Corporation Plasma etch reactor and method for emerging films
US5824607A (en) * 1997-02-06 1998-10-20 Applied Materials, Inc. Plasma confinement for an inductively coupled plasma reactor
US6189484B1 (en) 1999-03-05 2001-02-20 Applied Materials Inc. Plasma reactor having a helicon wave high density plasma source
JP2001093699A (ja) * 1999-09-22 2001-04-06 Hitachi Kokusai Electric Inc プラズマ処理装置
US6341574B1 (en) 1999-11-15 2002-01-29 Lam Research Corporation Plasma processing systems

Also Published As

Publication number Publication date
CN1423828A (zh) 2003-06-11
AU3082201A (en) 2001-05-30
DE60041350D1 (de) 2009-02-26
EP1230667A2 (en) 2002-08-14
EP1230667B1 (en) 2009-01-07
JP2003514386A (ja) 2003-04-15
WO2001037311A3 (en) 2001-10-11
TW530523B (en) 2003-05-01
CN100437897C (zh) 2008-11-26
JP5331283B2 (ja) 2013-10-30
WO2001037311A2 (en) 2001-05-25
CN1747133A (zh) 2006-03-15
KR100778258B1 (ko) 2007-11-22
US6322661B1 (en) 2001-11-27
KR20020053854A (ko) 2002-07-05
ATE420455T1 (de) 2009-01-15

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Granted publication date: 20051026