JP5329142B2 - イメージセンサ - Google Patents
イメージセンサ Download PDFInfo
- Publication number
- JP5329142B2 JP5329142B2 JP2008190041A JP2008190041A JP5329142B2 JP 5329142 B2 JP5329142 B2 JP 5329142B2 JP 2008190041 A JP2008190041 A JP 2008190041A JP 2008190041 A JP2008190041 A JP 2008190041A JP 5329142 B2 JP5329142 B2 JP 5329142B2
- Authority
- JP
- Japan
- Prior art keywords
- doped region
- photodiode
- image sensor
- conductivity type
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000009792 diffusion process Methods 0.000 claims description 11
- 125000006850 spacer group Chemical group 0.000 claims description 10
- 238000007667 floating Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 description 23
- 238000012546 transfer Methods 0.000 description 17
- 238000005468 ion implantation Methods 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 13
- 239000000758 substrate Substances 0.000 description 12
- 238000002955 isolation Methods 0.000 description 8
- 238000009826 distribution Methods 0.000 description 7
- 238000005421 electrostatic potential Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
101 エピ層
103 ゲート絶縁膜
104 ゲート導電膜
105 ゲート電極
106 第1ドープ領域
107 第2ドープ領域
108 スペーサ
109 第3ドープ領域
110 第4ドープ領域
PD フォトダイオード
Tx トランスファトランジスタ
Claims (17)
- エピ層に配置されているフォトダイオードと、
前記フォトダイオードから分離され、前記フォトダイオードの下部に配置され、前記エピ層の内部に配置されている第1ドープ領域と、
前記フォトダイオードの内部に配置された第2ドープ領域と
を備えるイメージセンサであって、前記エピ層が第1導電型を有し、前記第1ドープ領域及び前記第2ドープ領域の両方が第2導電型を有し、前記第1ドープ領域のドーピング濃度が前記第2ドープ領域のドーピング濃度より低い、イメージセンサ。 - 前記フォトダイオードが前記第2ドープ領域上に配置された第3ドープ領域を備え、前記第3ドープ領域が前記第1導電型を含む請求項1に記載のイメージセンサ。
- 前記フォトダイオードに接触するスペーサを有するゲート電極をさらに備える請求項2に記載のイメージセンサ。
- 前記第1ドープ領域が前記ゲート電極に整列されている請求項3に記載のイメージセンサ。
- 前記第1ドープ領域が前記エピ層の内部に島状部を備える請求項1に記載のイメージセンサ。
- 前記第1導電型がp型であり、前記第2導電型がn型である請求項1に記載のイメージセンサ。
- エピ層と、
前記エピ層に配置されているフォトダイオードと、
前記フォトダイオードから分離され、前記フォトダイオードの下に配列され、前記エピ層の内部に配置された第1ドープ領域と、
前記フォトダイオード内部に配置された第2ドープ領域と
を備え、前記第1ドープ領域が前記フォトダイオードの空乏領域を広げるように構成されており、前記エピ層が第1導電型を含み、前記第1ドープ領域及び前記第2ドープ領域が第2導電型を含んでおり、前記第1ドープ領域のドーピング濃度が前記第2ドープ領域のドーピング濃度より低いものである、イメージセンサ。 - 前記第1導電型がp型であり、前記第2導電型がn型である請求項7に記載のイメージセンサ。
- フローティング拡散領域をさらに備え、
前記フローティング拡散領域が前記第2導電型を含み、前記フローティング拡散領域のドーピング濃度が前記第2ドープ領域のドーピング濃度より高い、請求項7に記載のイメージセンサ。 - 前記フォトダイオードに整列されているゲート電極をさらに備える請求項7に記載のイメージセンサ。
- 前記第1ドープ領域が前記フォトダイオードの下だけに配置され、ゲート電極の下に配置されていない請求項7に記載のイメージセンサ。
- 前記第1ドープ領域が前記エピ層の内部に島状部を備える請求項7に記載のイメージセンサ。
- エピ層内部に配置された第1ドープ領域と、
フォトダイオード内部に配置され、前記第1ドープ領域から分離された第2ドープ領域と、
フローティング拡散領域と、
前記第1ドープ領域から分離され、前記フォトダイオードと前記フローティング拡散領域との間に配列されたゲート電極と
を備え、前記第1ドープ領域が前記フォトダイオードの空乏領域を広げるように構成されており、前記エピ層が第1導電型を含み、前記第1ドープ領域及び前記第2ドープ領域が第2導電型を含んでおり、前記第1ドープ領域のドーピング濃度が、前記第2ドープ領域のドーピング濃度より低いものである、イメージセンサ。 - 前記ゲート電極及び前記第1ドープ領域が、互いに離隔するように形成される請求項13に記載のイメージセンサ。
- 前記第1導電型がp型であり、前記第2導電型がn型である請求項13に記載のイメージセンサ。
- 前記フローティング拡散領域が前記第2導電型を含み、前記フローティング拡散領域のドーピング濃度が、前記第2ドープ領域のドーピング濃度より高い請求項13に記載のイメージセンサ。
- 前記第1ドープ領域が、前記エピ層内部に島状部を有する請求項13に記載のイメージセンサ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2007-0074105 | 2007-07-24 | ||
KR1020070074105A KR101019279B1 (ko) | 2007-07-24 | 2007-07-24 | 이미지 센서 및 그 제조방법 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012251178A Division JP2013042178A (ja) | 2007-07-24 | 2012-11-15 | イメージセンサ及びその製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009033167A JP2009033167A (ja) | 2009-02-12 |
JP2009033167A5 JP2009033167A5 (ja) | 2010-12-16 |
JP5329142B2 true JP5329142B2 (ja) | 2013-10-30 |
Family
ID=40294480
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008190041A Active JP5329142B2 (ja) | 2007-07-24 | 2008-07-23 | イメージセンサ |
JP2012251178A Pending JP2013042178A (ja) | 2007-07-24 | 2012-11-15 | イメージセンサ及びその製造方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012251178A Pending JP2013042178A (ja) | 2007-07-24 | 2012-11-15 | イメージセンサ及びその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US7999252B2 (ja) |
JP (2) | JP5329142B2 (ja) |
KR (1) | KR101019279B1 (ja) |
TW (2) | TWI470779B (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101543664B1 (ko) * | 2008-12-08 | 2015-08-12 | 삼성전자주식회사 | 픽셀 어레이 및 이를 포함하는 입체 영상 센서 |
KR102009931B1 (ko) * | 2012-07-06 | 2019-08-13 | 에스케이하이닉스 주식회사 | 씨모스 이미지센서 및 그 제조 방법 |
US9665604B2 (en) * | 2012-07-31 | 2017-05-30 | Schlumberger Technology Corporation | Modeling and manipulation of seismic reference datum (SRD) in a collaborative petro-technical application environment |
TWI538175B (zh) * | 2013-12-24 | 2016-06-11 | 光引研創股份有限公司 | 以慢光增強吸收之鍺光偵測器 |
US10918650B2 (en) | 2016-06-02 | 2021-02-16 | University Of South Florida | Method of treating melanoma using an inhibitor of an atypical protein kinase C |
US11348955B2 (en) * | 2018-06-05 | 2022-05-31 | Brillnics Singapore Pte. Ltd. | Pixel structure for image sensors |
US11409823B2 (en) * | 2018-07-09 | 2022-08-09 | Shiseido Company, Ltd. | Information processing apparatus, coating material generator, and computer program |
CN109979955B (zh) * | 2019-04-03 | 2021-06-18 | 上海华力微电子有限公司 | 一种半导体结构及其制造方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6489643B1 (en) | 1998-06-27 | 2002-12-03 | Hynix Semiconductor Inc. | Photodiode having a plurality of PN junctions and image sensor having the same |
JP4419238B2 (ja) * | 1999-12-27 | 2010-02-24 | ソニー株式会社 | 固体撮像素子及びその製造方法 |
KR20020020086A (ko) * | 2000-09-07 | 2002-03-14 | 박용 | 씨모스 이미지 센서 |
KR20020022931A (ko) * | 2000-09-21 | 2002-03-28 | 박종섭 | 씨모스 이미지 센서의 포토다이오드 및 그의 제조방법 |
KR100677044B1 (ko) * | 2001-06-26 | 2007-01-31 | 매그나칩 반도체 유한회사 | 이미지센서 제조 방법 |
JP4972838B2 (ja) * | 2001-09-12 | 2012-07-11 | ソニー株式会社 | 固体撮像素子及びその製造方法 |
JP4882207B2 (ja) * | 2004-04-28 | 2012-02-22 | ソニー株式会社 | 固体撮像素子 |
KR101069103B1 (ko) | 2004-07-29 | 2011-09-30 | 크로스텍 캐피탈, 엘엘씨 | 전하운송효율을 향상시키기 위한 이미지센서 및 제조 방법 |
KR100660275B1 (ko) * | 2004-12-29 | 2006-12-20 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 화소의 전달 트랜지스터 및 그 제조방법 |
US7728330B2 (en) * | 2005-08-24 | 2010-06-01 | Aptina Imaging Corporation | CMOS imager with nitrided gate oxide and method of fabrication |
JP4951898B2 (ja) * | 2005-08-26 | 2012-06-13 | ソニー株式会社 | 固体撮像素子、固体撮像素子の製造方法および固体撮像素子を用いた画像撮影装置 |
KR100723137B1 (ko) * | 2005-11-24 | 2007-05-30 | 삼성전기주식회사 | 포토다이오드 소자 및 이를 이용한 광센서용 포토다이오드어레이 |
-
2007
- 2007-07-24 KR KR1020070074105A patent/KR101019279B1/ko active IP Right Grant
-
2008
- 2008-07-23 TW TW101146681A patent/TWI470779B/zh active
- 2008-07-23 TW TW097128012A patent/TWI397172B/zh active
- 2008-07-23 US US12/219,499 patent/US7999252B2/en active Active
- 2008-07-23 JP JP2008190041A patent/JP5329142B2/ja active Active
-
2011
- 2011-07-29 US US13/194,142 patent/US8828775B2/en active Active
-
2012
- 2012-11-15 JP JP2012251178A patent/JP2013042178A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
KR101019279B1 (ko) | 2011-03-07 |
TWI397172B (zh) | 2013-05-21 |
TW201320319A (zh) | 2013-05-16 |
US7999252B2 (en) | 2011-08-16 |
KR20090010747A (ko) | 2009-01-30 |
JP2009033167A (ja) | 2009-02-12 |
US20090026510A1 (en) | 2009-01-29 |
US20120028394A1 (en) | 2012-02-02 |
TW200924181A (en) | 2009-06-01 |
JP2013042178A (ja) | 2013-02-28 |
US8828775B2 (en) | 2014-09-09 |
TWI470779B (zh) | 2015-01-21 |
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