JP5321827B2 - 多結晶シリコンの製造方法および製造装置 - Google Patents

多結晶シリコンの製造方法および製造装置 Download PDF

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JP5321827B2
JP5321827B2 JP2009168189A JP2009168189A JP5321827B2 JP 5321827 B2 JP5321827 B2 JP 5321827B2 JP 2009168189 A JP2009168189 A JP 2009168189A JP 2009168189 A JP2009168189 A JP 2009168189A JP 5321827 B2 JP5321827 B2 JP 5321827B2
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reactor
gas
primary
hydrogen
raw material
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JP2009242238A (ja
JP2009242238A5 (enExample
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守 中野
敏由記 石井
久典 森
昌晃 坂口
匡希 縄田
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Mitsubishi Materials Corp
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Mitsubishi Materials Corp
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JP2009168189A 2009-07-16 2009-07-16 多結晶シリコンの製造方法および製造装置 Expired - Fee Related JP5321827B2 (ja)

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JP2004136567A Division JP4780271B2 (ja) 2004-04-30 2004-04-30 多結晶シリコンの製造方法

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JP2009242238A JP2009242238A (ja) 2009-10-22
JP2009242238A5 JP2009242238A5 (enExample) 2010-09-16
JP5321827B2 true JP5321827B2 (ja) 2013-10-23

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3120985B2 (ja) 1988-11-28 2000-12-25 シーメンス、アクチエンゲゼルシヤフト 線路変成器

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102897766A (zh) * 2011-07-26 2013-01-30 王春龙 一种多晶硅还原装置
CN103754881A (zh) * 2013-12-17 2014-04-30 内蒙古同远企业管理咨询有限责任公司 一种多晶硅还原节能生产工艺

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4792460A (en) * 1986-07-15 1988-12-20 Electric Power Research Institute, Inc. Method for production of polysilanes and polygermanes, and deposition of hydrogenated amorphous silicon, alloys thereof, or hydrogenated amorphous germanium
JPH1149508A (ja) * 1997-06-03 1999-02-23 Tokuyama Corp 多結晶シリコンの廃棄物の少ない製造方法
JP2002068727A (ja) * 2000-08-29 2002-03-08 Jgc Corp 高純度シリカの製造方法
JP4038110B2 (ja) * 2001-10-19 2008-01-23 株式会社トクヤマ シリコンの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3120985B2 (ja) 1988-11-28 2000-12-25 シーメンス、アクチエンゲゼルシヤフト 線路変成器

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