JP2009242238A5 - - Google Patents
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- Publication number
- JP2009242238A5 JP2009242238A5 JP2009168189A JP2009168189A JP2009242238A5 JP 2009242238 A5 JP2009242238 A5 JP 2009242238A5 JP 2009168189 A JP2009168189 A JP 2009168189A JP 2009168189 A JP2009168189 A JP 2009168189A JP 2009242238 A5 JP2009242238 A5 JP 2009242238A5
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline silicon
- gas
- silane trichloride
- reaction furnace
- raw material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007789 gas Substances 0.000 claims description 22
- 238000006243 chemical reaction Methods 0.000 claims description 14
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 13
- 229910000077 silane Inorganic materials 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 9
- 239000001257 hydrogen Substances 0.000 claims description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 239000002994 raw material Substances 0.000 claims description 9
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims description 5
- 239000005049 silicon tetrachloride Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000000197 pyrolysis Methods 0.000 claims description 2
- 239000006227 byproduct Substances 0.000 claims 2
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 claims 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 3
- 239000005052 trichlorosilane Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000005046 Chlorosilane Substances 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000010517 secondary reaction Methods 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009168189A JP5321827B2 (ja) | 2009-07-16 | 2009-07-16 | 多結晶シリコンの製造方法および製造装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009168189A JP5321827B2 (ja) | 2009-07-16 | 2009-07-16 | 多結晶シリコンの製造方法および製造装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004136567A Division JP4780271B2 (ja) | 2004-04-30 | 2004-04-30 | 多結晶シリコンの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009242238A JP2009242238A (ja) | 2009-10-22 |
| JP2009242238A5 true JP2009242238A5 (enExample) | 2010-09-16 |
| JP5321827B2 JP5321827B2 (ja) | 2013-10-23 |
Family
ID=41304593
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009168189A Expired - Fee Related JP5321827B2 (ja) | 2009-07-16 | 2009-07-16 | 多結晶シリコンの製造方法および製造装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5321827B2 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0371157B1 (de) | 1988-11-28 | 1994-03-02 | Siemens Aktiengesellschaft | Leitungstransformator |
| CN102897766A (zh) * | 2011-07-26 | 2013-01-30 | 王春龙 | 一种多晶硅还原装置 |
| CN103754881A (zh) * | 2013-12-17 | 2014-04-30 | 内蒙古同远企业管理咨询有限责任公司 | 一种多晶硅还原节能生产工艺 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4792460A (en) * | 1986-07-15 | 1988-12-20 | Electric Power Research Institute, Inc. | Method for production of polysilanes and polygermanes, and deposition of hydrogenated amorphous silicon, alloys thereof, or hydrogenated amorphous germanium |
| JPH1149508A (ja) * | 1997-06-03 | 1999-02-23 | Tokuyama Corp | 多結晶シリコンの廃棄物の少ない製造方法 |
| JP2002068727A (ja) * | 2000-08-29 | 2002-03-08 | Jgc Corp | 高純度シリカの製造方法 |
| JP4038110B2 (ja) * | 2001-10-19 | 2008-01-23 | 株式会社トクヤマ | シリコンの製造方法 |
-
2009
- 2009-07-16 JP JP2009168189A patent/JP5321827B2/ja not_active Expired - Fee Related
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