JP5306283B2 - 不揮発性記憶装置及びその駆動方法 - Google Patents

不揮発性記憶装置及びその駆動方法 Download PDF

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Publication number
JP5306283B2
JP5306283B2 JP2010116499A JP2010116499A JP5306283B2 JP 5306283 B2 JP5306283 B2 JP 5306283B2 JP 2010116499 A JP2010116499 A JP 2010116499A JP 2010116499 A JP2010116499 A JP 2010116499A JP 5306283 B2 JP5306283 B2 JP 5306283B2
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Japan
Prior art keywords
wiring
current
voltage
bit line
upper limit
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Expired - Fee Related
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JP2010116499A
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English (en)
Japanese (ja)
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JP2011243265A5 (enExample
JP2011243265A (ja
Inventor
隆之 塚本
貴文 霜鳥
裕士 菅野
洋一 峯村
夏紀 菊地
充 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
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Toshiba Corp
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Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2010116499A priority Critical patent/JP5306283B2/ja
Priority to US13/018,757 priority patent/US8274822B2/en
Publication of JP2011243265A publication Critical patent/JP2011243265A/ja
Publication of JP2011243265A5 publication Critical patent/JP2011243265A5/ja
Application granted granted Critical
Publication of JP5306283B2 publication Critical patent/JP5306283B2/ja
Expired - Fee Related legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0038—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0064—Verifying circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0097—Erasing, e.g. resetting, circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/71—Three dimensional array
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
JP2010116499A 2010-05-20 2010-05-20 不揮発性記憶装置及びその駆動方法 Expired - Fee Related JP5306283B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2010116499A JP5306283B2 (ja) 2010-05-20 2010-05-20 不揮発性記憶装置及びその駆動方法
US13/018,757 US8274822B2 (en) 2010-05-20 2011-02-01 Nonvolatile memory device and method for driving same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010116499A JP5306283B2 (ja) 2010-05-20 2010-05-20 不揮発性記憶装置及びその駆動方法

Publications (3)

Publication Number Publication Date
JP2011243265A JP2011243265A (ja) 2011-12-01
JP2011243265A5 JP2011243265A5 (enExample) 2012-10-04
JP5306283B2 true JP5306283B2 (ja) 2013-10-02

Family

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Family Applications (1)

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JP2010116499A Expired - Fee Related JP5306283B2 (ja) 2010-05-20 2010-05-20 不揮発性記憶装置及びその駆動方法

Country Status (2)

Country Link
US (1) US8274822B2 (enExample)
JP (1) JP5306283B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120063136A (ko) * 2010-12-07 2012-06-15 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그 구동방법
JP5911814B2 (ja) * 2012-09-12 2016-04-27 株式会社東芝 抵抗変化メモリ
TWI688957B (zh) * 2014-11-06 2020-03-21 日商索尼半導體解決方案公司 非揮發性記憶體裝置、及非揮發性記憶體裝置之控制方法
JP2017168173A (ja) * 2016-03-17 2017-09-21 株式会社東芝 集積回路
JP2018160294A (ja) * 2017-03-22 2018-10-11 東芝メモリ株式会社 メモリデバイス
JP2018195365A (ja) 2017-05-19 2018-12-06 ソニーセミコンダクタソリューションズ株式会社 メモリ装置およびメモリ装置の制御方法
US10297316B2 (en) * 2017-08-28 2019-05-21 Macronix International Co., Ltd. Phase change memory apparatus and read control method to reduce read disturb and sneak current phenomena
CN111542882B (zh) * 2017-12-29 2023-04-04 松下控股株式会社 电阻变化型非易失性存储装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100558548B1 (ko) * 2003-11-27 2006-03-10 삼성전자주식회사 상변화 메모리 소자에서의 라이트 드라이버 회로 및라이트 전류 인가방법
TWI288931B (en) * 2004-06-19 2007-10-21 Samsung Electronics Co Ltd Phase-change memory element driver circuits using measurement to control current and methods of controlling drive current of phase-change memory elements using measurement
KR100690914B1 (ko) * 2005-08-10 2007-03-09 삼성전자주식회사 상변화 메모리 장치
US8134866B2 (en) * 2006-04-06 2012-03-13 Samsung Electronics Co., Ltd. Phase change memory devices and systems, and related programming methods
US7522448B2 (en) * 2006-07-31 2009-04-21 Sandisk 3D Llc Controlled pulse operations in non-volatile memory
US7391638B2 (en) 2006-10-24 2008-06-24 Sandisk 3D Llc Memory device for protecting memory cells during programming
TWI517156B (zh) * 2008-02-29 2016-01-11 Toshiba Kk Semiconductor memory device
JP4719233B2 (ja) * 2008-03-11 2011-07-06 株式会社東芝 不揮発性半導体記憶装置
JP5044617B2 (ja) * 2009-08-31 2012-10-10 株式会社東芝 不揮発性半導体記憶装置
JP5322974B2 (ja) * 2010-02-25 2013-10-23 株式会社東芝 半導体記憶装置

Also Published As

Publication number Publication date
US20110286260A1 (en) 2011-11-24
JP2011243265A (ja) 2011-12-01
US8274822B2 (en) 2012-09-25

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