JP5304062B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP5304062B2
JP5304062B2 JP2008178864A JP2008178864A JP5304062B2 JP 5304062 B2 JP5304062 B2 JP 5304062B2 JP 2008178864 A JP2008178864 A JP 2008178864A JP 2008178864 A JP2008178864 A JP 2008178864A JP 5304062 B2 JP5304062 B2 JP 5304062B2
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JP
Japan
Prior art keywords
wall surface
plasma processing
processing container
processing apparatus
seal
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Expired - Fee Related
Application number
JP2008178864A
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English (en)
Japanese (ja)
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JP2010021244A5 (https=
JP2010021244A (ja
Inventor
直樹 松本
和行 加藤
政史 四方
和人 高井
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2008178864A priority Critical patent/JP5304062B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to US13/003,102 priority patent/US8800484B2/en
Priority to CN200980125715.7A priority patent/CN102084469B/zh
Priority to KR1020107028917A priority patent/KR101174277B1/ko
Priority to PCT/JP2009/060916 priority patent/WO2010004836A1/ja
Priority to TW098123004A priority patent/TWI425883B/zh
Publication of JP2010021244A publication Critical patent/JP2010021244A/ja
Publication of JP2010021244A5 publication Critical patent/JP2010021244A5/ja
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Publication of JP5304062B2 publication Critical patent/JP5304062B2/ja
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  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2008178864A 2008-07-09 2008-07-09 プラズマ処理装置 Expired - Fee Related JP5304062B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2008178864A JP5304062B2 (ja) 2008-07-09 2008-07-09 プラズマ処理装置
CN200980125715.7A CN102084469B (zh) 2008-07-09 2009-06-16 等离子体处理装置
KR1020107028917A KR101174277B1 (ko) 2008-07-09 2009-06-16 플라즈마 처리 장치
PCT/JP2009/060916 WO2010004836A1 (ja) 2008-07-09 2009-06-16 プラズマ処理装置
US13/003,102 US8800484B2 (en) 2008-07-09 2009-06-16 Plasma processing apparatus
TW098123004A TWI425883B (zh) 2008-07-09 2009-07-08 Plasma processing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008178864A JP5304062B2 (ja) 2008-07-09 2008-07-09 プラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2010021244A JP2010021244A (ja) 2010-01-28
JP2010021244A5 JP2010021244A5 (https=) 2012-03-01
JP5304062B2 true JP5304062B2 (ja) 2013-10-02

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ID=41705874

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008178864A Expired - Fee Related JP5304062B2 (ja) 2008-07-09 2008-07-09 プラズマ処理装置

Country Status (1)

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JP (1) JP5304062B2 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5837793B2 (ja) 2010-11-30 2015-12-24 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び基板処理装置のバッフル構造
JP7281968B2 (ja) * 2019-05-30 2023-05-26 東京エレクトロン株式会社 アリ溝加工方法及び基板処理装置
CN117427792A (zh) * 2022-07-14 2024-01-23 中微半导体设备(上海)股份有限公司 等离子体处理设备、气体喷淋头及其制造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5082229B2 (ja) * 2005-11-29 2012-11-28 東京エレクトロン株式会社 プラズマ処理装置
JP4833778B2 (ja) * 2006-02-13 2011-12-07 東京エレクトロン株式会社 基板処理装置及び基板処理方法

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JP2010021244A (ja) 2010-01-28

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