JP5297584B2 - 半導体装置、半導体装置を用いた温度センサー及び半導体装置の作製方法 - Google Patents

半導体装置、半導体装置を用いた温度センサー及び半導体装置の作製方法 Download PDF

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JP5297584B2
JP5297584B2 JP2006271889A JP2006271889A JP5297584B2 JP 5297584 B2 JP5297584 B2 JP 5297584B2 JP 2006271889 A JP2006271889 A JP 2006271889A JP 2006271889 A JP2006271889 A JP 2006271889A JP 5297584 B2 JP5297584 B2 JP 5297584B2
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film
semiconductor
semiconductor film
conductive film
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JP2007134684A5 (enExample
JP2007134684A (ja
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剛久 波多野
肇 徳永
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2006271889A 2005-10-14 2006-10-03 半導体装置、半導体装置を用いた温度センサー及び半導体装置の作製方法 Expired - Fee Related JP5297584B2 (ja)

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JP2006271889A JP5297584B2 (ja) 2005-10-14 2006-10-03 半導体装置、半導体装置を用いた温度センサー及び半導体装置の作製方法

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JP2005300741 2005-10-14
JP2005300741 2005-10-14
JP2006271889A JP5297584B2 (ja) 2005-10-14 2006-10-03 半導体装置、半導体装置を用いた温度センサー及び半導体装置の作製方法

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JP2007134684A JP2007134684A (ja) 2007-05-31
JP2007134684A5 JP2007134684A5 (enExample) 2009-11-19
JP5297584B2 true JP5297584B2 (ja) 2013-09-25

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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5171232B2 (ja) * 2006-12-15 2013-03-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2009049287A (ja) * 2007-08-22 2009-03-05 Funai Electric Advanced Applied Technology Research Institute Inc スイッチング素子、スイッチング素子の製造方法及びメモリ素子アレイ
US8399356B2 (en) * 2008-03-28 2013-03-19 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US9111751B2 (en) 2010-12-21 2015-08-18 Mitsubishi Electric Corporation Silicon carbide semiconductor device and method of fabricating same
JP5666319B2 (ja) 2011-01-12 2015-02-12 東京エレクトロン株式会社 温度センサ、温度センサの製造方法、半導体装置及び半導体装置の製造方法
CN102231424B (zh) * 2011-06-24 2014-04-30 清华大学 相变存储单元及相变存储器
GB2569196B (en) * 2017-12-11 2022-04-20 Pragmatic Printing Ltd Schottky diode
DE112020002974B4 (de) 2019-06-21 2024-12-24 Rohm Co., Ltd. Halbleiterbauteil und verfahren zur herstellung eines solchen
JP7388015B2 (ja) * 2019-07-02 2023-11-29 セイコーエプソン株式会社 集積回路装置、発振器、電子機器及び移動体

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5109256A (en) * 1990-08-17 1992-04-28 National Semiconductor Corporation Schottky barrier diodes and Schottky barrier diode-clamped transistors and method of fabrication
JP3254113B2 (ja) * 1994-08-30 2002-02-04 セイコーインスツルメンツ株式会社 加速度センサ
JPH09135387A (ja) * 1995-11-08 1997-05-20 Nikon Corp 熱型赤外線イメージセンサ
JPH09318436A (ja) * 1996-05-28 1997-12-12 Nikon Corp 熱型赤外線センサ及びその製造方法並びにこれを用いたイメージセンサ
JP2005209710A (ja) * 2004-01-20 2005-08-04 Hitachi Ulsi Systems Co Ltd 半導体集積回路装置の製造方法

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