JP5292263B2 - 成膜方法及び発光素子の作製方法 - Google Patents

成膜方法及び発光素子の作製方法 Download PDF

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Publication number
JP5292263B2
JP5292263B2 JP2009266210A JP2009266210A JP5292263B2 JP 5292263 B2 JP5292263 B2 JP 5292263B2 JP 2009266210 A JP2009266210 A JP 2009266210A JP 2009266210 A JP2009266210 A JP 2009266210A JP 5292263 B2 JP5292263 B2 JP 5292263B2
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abbreviation
film
layer
substrate
elastic substrate
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JP2009266210A
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Japanese (ja)
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JP2010157494A (ja
JP2010157494A5 (https=
Inventor
幸一郎 田中
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2009266210A priority Critical patent/JP5292263B2/ja
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Publication of JP2010157494A5 publication Critical patent/JP2010157494A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/114—Poly-phenylenevinylene; Derivatives thereof

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
JP2009266210A 2008-12-05 2009-11-24 成膜方法及び発光素子の作製方法 Expired - Fee Related JP5292263B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009266210A JP5292263B2 (ja) 2008-12-05 2009-11-24 成膜方法及び発光素子の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008310491 2008-12-05
JP2008310491 2008-12-05
JP2009266210A JP5292263B2 (ja) 2008-12-05 2009-11-24 成膜方法及び発光素子の作製方法

Publications (3)

Publication Number Publication Date
JP2010157494A JP2010157494A (ja) 2010-07-15
JP2010157494A5 JP2010157494A5 (https=) 2012-10-11
JP5292263B2 true JP5292263B2 (ja) 2013-09-18

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JP2009266210A Expired - Fee Related JP5292263B2 (ja) 2008-12-05 2009-11-24 成膜方法及び発光素子の作製方法

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US (1) US8383193B2 (https=)
JP (1) JP5292263B2 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7994021B2 (en) * 2006-07-28 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
JP2010153813A (ja) 2008-11-18 2010-07-08 Semiconductor Energy Lab Co Ltd 発光装置及びその作製方法、並びに、携帯電話機
US8576209B2 (en) 2009-07-07 2013-11-05 Semiconductor Energy Laboratory Co., Ltd. Display device
JP6642999B2 (ja) * 2015-08-06 2020-02-12 株式会社ブイ・テクノロジー 有機ｅｌ素子の製造方法
KR102270021B1 (ko) * 2016-03-16 2021-06-28 엔씨씨 나노, 엘엘씨 기판 상에 기능성 재료를 증착하기 위한 방법
US11387384B2 (en) * 2019-04-16 2022-07-12 Samsung Electronics Co., Ltd. LED transferring method and display module manufactured by the same

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US5998085A (en) * 1996-07-23 1999-12-07 3M Innovative Properties Process for preparing high resolution emissive arrays and corresponding articles
KR100195175B1 (ko) 1996-12-23 1999-06-15 손욱 유기전자발광소자 유기박막용 도너필름, 이를 이용한 유기전자발광소자의 제조방법 및 그 방법에 따라 제조된 유기전자발광소자
US6562442B2 (en) * 1998-08-20 2003-05-13 Fijicopian Co., Ltd. Metallic thermal transfer recording medium
DE60003281T2 (de) * 1999-01-15 2004-05-06 3M Innovative Properties Co., Saint Paul Thermisches Übertragungsverfahren.
JP2002272460A (ja) * 2001-03-16 2002-09-24 Lead Medic Kk 衝撃波発生方法および装置、粒子加速方法、粒子加速器、薬剤導入装置ならびに遺伝子導入方法および装置
US6695029B2 (en) 2001-12-12 2004-02-24 Eastman Kodak Company Apparatus for permitting transfer of organic material from a donor to form a layer in an OLED device
US6688365B2 (en) 2001-12-19 2004-02-10 Eastman Kodak Company Method for transferring of organic material from a donor to form a layer in an OLED device
US6703179B2 (en) 2002-03-13 2004-03-09 Eastman Kodak Company Transfer of organic material from a donor to form a layer in an OLED device
JP2004103406A (ja) 2002-09-10 2004-04-02 Sony Corp 薄膜パターン形成方法および装置並びに有機ｅｌ表示装置の製造方法
KR100552964B1 (ko) * 2003-08-28 2006-02-15 삼성에스디아이 주식회사 평판표시소자용 도너필름 및 그를 이용한유기전계발광소자의 제조방법
US6929048B2 (en) 2003-09-05 2005-08-16 Eastman Kodak Company Laser transfer of organic material from a donor to form a layer in an OLED device
KR100611756B1 (ko) 2004-06-18 2006-08-10 삼성에스디아이 주식회사 유기 전계 발광 소자 및 그의 제조 방법
WO2006045085A1 (en) * 2004-10-20 2006-04-27 E.I. Dupont De Nemours And Company Donor element for thermal transfer
KR100700831B1 (ko) * 2005-11-16 2007-03-28 삼성에스디아이 주식회사 레이저 열 전사법 및 이를 이용한 유기 발광소자의제조방법
US8080811B2 (en) * 2007-12-28 2011-12-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing evaporation donor substrate and light-emitting device
WO2009099002A1 (en) * 2008-02-04 2009-08-13 Semiconductor Energy Laboratory Co., Ltd. Deposition method and method for manufacturing light-emitting device
JP2009231277A (ja) * 2008-02-29 2009-10-08 Semiconductor Energy Lab Co Ltd 製造装置
JP5416987B2 (ja) * 2008-02-29 2014-02-12 株式会社半導体エネルギー研究所 成膜方法及び発光装置の作製方法
WO2009107548A1 (en) * 2008-02-29 2009-09-03 Semiconductor Energy Laboratory Co., Ltd. Deposition method and manufacturing method of light-emitting device
JP5238544B2 (ja) * 2008-03-07 2013-07-17 株式会社半導体エネルギー研究所 成膜方法及び発光装置の作製方法
JP5079722B2 (ja) * 2008-03-07 2012-11-21 株式会社半導体エネルギー研究所 発光装置の作製方法
US8182863B2 (en) * 2008-03-17 2012-05-22 Semiconductor Energy Laboratory Co., Ltd. Deposition method and manufacturing method of light-emitting device
US7932112B2 (en) * 2008-04-14 2011-04-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting device
JP5538642B2 (ja) * 2008-04-15 2014-07-02 株式会社半導体エネルギー研究所 成膜方法および発光素子の作製方法
US8409672B2 (en) * 2008-04-24 2013-04-02 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing evaporation donor substrate and method of manufacturing light-emitting device
JP5159689B2 (ja) * 2008-04-25 2013-03-06 株式会社半導体エネルギー研究所 発光装置の作製方法
JP2010040380A (ja) * 2008-08-06 2010-02-18 Hitachi Displays Ltd 有機ｅｌパネルの製造方法

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JP2010157494A (ja) 2010-07-15
US20100143610A1 (en) 2010-06-10
US8383193B2 (en) 2013-02-26

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