JP5280196B2 - 基板を支持するための装置及びこのような装置の製造方法 - Google Patents
基板を支持するための装置及びこのような装置の製造方法 Download PDFInfo
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- JP5280196B2 JP5280196B2 JP2008508770A JP2008508770A JP5280196B2 JP 5280196 B2 JP5280196 B2 JP 5280196B2 JP 2008508770 A JP2008508770 A JP 2008508770A JP 2008508770 A JP2008508770 A JP 2008508770A JP 5280196 B2 JP5280196 B2 JP 5280196B2
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- metal carbide
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- 239000000758 substrate Substances 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims description 25
- 238000005530 etching Methods 0.000 claims description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 239000002131 composite material Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 238000003754 machining Methods 0.000 abstract description 3
- 230000001681 protective effect Effects 0.000 abstract description 3
- 238000010276 construction Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 6
- 238000005553 drilling Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B38/00—Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Jigs For Machine Tools (AREA)
Description
A 炭素コアを供給する工程と、
B 炭素コアに金属カーバイドの層を適用する工程と、
C 少なくとも部分的に金属分子をエッチング除去することにより、金属カーバイドの層を少なくとも部分的に多孔質にする工程と
を含んでいる。
D 金属カーバイド分子を少なくとも部分的にエッチング除去することにより、金属カーバイドの層を少なくとも部分的に多孔質にする工程
によって更に特徴づけられている。
図1は、本発明に係るサセプタの一態様の断面図であり;
図2は、多孔質構造を得るためのエッチング操作前における本発明に係るサセプタの材料を示す写真であり;
図3は、多孔質構造を得るためのエッチング操作後における本発明に係るサセプタの材料を示す写真である。
Claims (7)
- 半導体部品の製造中に基板を支持するための装置であって、前記装置は半導体部品の製造中に基板方向へのプロセスガスの通過のために配置され、前記基板が置かれる上面を有している実質的に平坦なプレートを具備し、前記プレートの前記上面は少なくとも部分的に多孔質であり、前記上面の多孔度は少なくとも金属分子をエッチング除去することにより調節される、装置。
- 前記上面の多孔度は少なくとも金属カーバイド分子をエッチング除去することにより調節されうることを特徴とする請求項1に記載の装置。
- 炭素コアと金属カーバイドの外層とからなる複合材により構成されていることを特徴とする請求項1または2に記載の装置。
- 多孔度は5体積%乃至90体積%の範囲内にあることを特徴とする請求項1乃至3の何れか1項に記載の装置。
- 金属カーバイドはシリコンカーバイドであることを特徴とする請求項1乃至4の何れか1項に記載の装置。
- 半導体部品の製造中に基板を支持するための装置であって、前記装置は半導体部品の製造中に基板方向へのプロセスガスの通過のために配置される装置の製造方法であり、
A 炭素コアを供給する工程と、
B 前記炭素コアに金属カーバイドの層を適用する工程と、
C 金属分子を少なくとも部分的にエッチング除去することにより前記金属カーバイドの層を少なくとも部分的に多孔質にする工程とを具備した方法。 - D 金属カーバイド分子を少なくとも部分的にエッチング除去することにより前記金属カーバイドの層を少なくとも部分的に多孔質にする工程によって更に特徴づけられている請求項6に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL1028867 | 2005-04-26 | ||
NL1028867A NL1028867C2 (nl) | 2005-04-26 | 2005-04-26 | Inrichting voor het ondersteunen van een substraat alsmede een werkwijze voor het vervaardigen van een dergelijke inrichting. |
PCT/NL2006/000226 WO2006115406A1 (en) | 2005-04-26 | 2006-04-26 | Device for supporting a substrate, as well as a method for manufacturing such a device |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008539582A JP2008539582A (ja) | 2008-11-13 |
JP5280196B2 true JP5280196B2 (ja) | 2013-09-04 |
Family
ID=35432576
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008508770A Active JP5280196B2 (ja) | 2005-04-26 | 2006-04-26 | 基板を支持するための装置及びこのような装置の製造方法 |
Country Status (7)
Country | Link |
---|---|
US (2) | US20090272318A1 (ja) |
EP (1) | EP1875495A1 (ja) |
JP (1) | JP5280196B2 (ja) |
KR (1) | KR101408823B1 (ja) |
NL (1) | NL1028867C2 (ja) |
TW (1) | TWI475636B (ja) |
WO (1) | WO2006115406A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
PL3395338T3 (pl) | 2003-09-12 | 2019-10-31 | Amgen Inc | Szybko rozpuszczająca się formulacja zawierająca cynakalcet HCl |
US9870915B1 (en) * | 2016-10-01 | 2018-01-16 | Applied Materials, Inc. | Chemical modification of hardmask films for enhanced etching and selective removal |
EP3835281A1 (de) | 2019-12-13 | 2021-06-16 | Siltronic AG | Verfahren zur herstellung eines plattenförmigen formkörpers mit einer siliziumkarbid-matrix |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6389490A (ja) * | 1986-09-30 | 1988-04-20 | Toshiba Ceramics Co Ltd | ウエ−ハ加熱用治具 |
JPS63210148A (ja) * | 1987-02-26 | 1988-08-31 | Nikko Rika Kk | 真空チヤツク用プラスチツクス焼結体 |
JPH07118466B2 (ja) * | 1988-12-26 | 1995-12-18 | 東芝セラミックス株式会社 | サセプタ |
US5298767A (en) * | 1992-10-06 | 1994-03-29 | Kulite Semiconductor Products, Inc. | Porous silicon carbide (SiC) semiconductor device |
US6596086B1 (en) * | 1998-04-28 | 2003-07-22 | Shin-Etsu Handotai Co., Ltd. | Apparatus for thin film growth |
JP2000007438A (ja) * | 1998-06-23 | 2000-01-11 | Ngk Insulators Ltd | 高抵抗再結晶炭化珪素、耐蝕性部材、高抵抗再結晶炭化珪素の製造方法および耐蝕性部材の製造方法 |
DE10117486A1 (de) * | 2001-04-07 | 2002-10-17 | Bosch Gmbh Robert | Verfahren zur Herstelung eines Halbleiterbauelements sowie ein nach dem Verfahren hergestelltes Halbleiterbauelement |
US20030062734A1 (en) * | 2001-10-02 | 2003-04-03 | Faris Sadeg M. | Device and method for handling fragile objects, and manufacturing method thereof |
DE10157379A1 (de) * | 2001-11-22 | 2003-06-05 | Forschungszentrum Juelich Gmbh | Herstellung von poröser Keramik |
GB0229212D0 (en) * | 2002-12-14 | 2003-01-22 | Koninkl Philips Electronics Nv | Method of manufacture of a trench semiconductor device |
DE10328842B4 (de) * | 2003-06-26 | 2007-03-01 | Siltronic Ag | Suszeptor für eine chemische Gasphasenabscheidung, Verfahren zur Bearbeitung einer Halbleiterscheibe durch chemische Gasphasenabscheidung und nach dem Verfahren bearbeitete Halbleiterscheibe |
US7235139B2 (en) * | 2003-10-28 | 2007-06-26 | Veeco Instruments Inc. | Wafer carrier for growing GaN wafers |
DE10357698A1 (de) * | 2003-12-09 | 2005-07-14 | Schunk Kohlenstofftechnik Gmbh | Träger für zu behandelnde Gegenstände sowie Verfahren zur Herstellung eines solchen |
-
2005
- 2005-04-26 NL NL1028867A patent/NL1028867C2/nl active Search and Examination
-
2006
- 2006-04-26 TW TW095114835A patent/TWI475636B/zh active
- 2006-04-26 US US11/919,324 patent/US20090272318A1/en not_active Abandoned
- 2006-04-26 WO PCT/NL2006/000226 patent/WO2006115406A1/en active Application Filing
- 2006-04-26 JP JP2008508770A patent/JP5280196B2/ja active Active
- 2006-04-26 EP EP06733032A patent/EP1875495A1/en not_active Withdrawn
- 2006-04-26 KR KR1020077025289A patent/KR101408823B1/ko active IP Right Grant
-
2013
- 2013-05-31 US US13/907,525 patent/US20130334678A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
KR20080009197A (ko) | 2008-01-25 |
KR101408823B1 (ko) | 2014-06-19 |
US20130334678A1 (en) | 2013-12-19 |
NL1028867C2 (nl) | 2006-10-27 |
TW200644152A (en) | 2006-12-16 |
JP2008539582A (ja) | 2008-11-13 |
US20090272318A1 (en) | 2009-11-05 |
TWI475636B (zh) | 2015-03-01 |
WO2006115406A1 (en) | 2006-11-02 |
EP1875495A1 (en) | 2008-01-09 |
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