JP5278376B2 - 熱処理装置及び熱処理方法 - Google Patents
熱処理装置及び熱処理方法 Download PDFInfo
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- JP5278376B2 JP5278376B2 JP2010124651A JP2010124651A JP5278376B2 JP 5278376 B2 JP5278376 B2 JP 5278376B2 JP 2010124651 A JP2010124651 A JP 2010124651A JP 2010124651 A JP2010124651 A JP 2010124651A JP 5278376 B2 JP5278376 B2 JP 5278376B2
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- reaction tube
- gas
- gas supply
- heat treatment
- supply duct
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 60
- 238000000034 method Methods 0.000 title claims description 27
- 238000006243 chemical reaction Methods 0.000 claims abstract description 147
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 238000012545 processing Methods 0.000 claims description 71
- 238000003860 storage Methods 0.000 claims description 6
- 230000014759 maintenance of location Effects 0.000 abstract description 8
- 230000008021 deposition Effects 0.000 abstract description 4
- 230000002093 peripheral effect Effects 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 105
- 235000012431 wafers Nutrition 0.000 description 58
- 210000000078 claw Anatomy 0.000 description 19
- 239000011810 insulating material Substances 0.000 description 12
- 230000000694 effects Effects 0.000 description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 239000000047 product Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910003818 SiH2Cl2 Inorganic materials 0.000 description 3
- 208000037998 chronic venous disease Diseases 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 3
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
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- 238000009792 diffusion process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010124651A JP5278376B2 (ja) | 2010-05-31 | 2010-05-31 | 熱処理装置及び熱処理方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010124651A JP5278376B2 (ja) | 2010-05-31 | 2010-05-31 | 熱処理装置及び熱処理方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007016848A Division JP4553263B2 (ja) | 2007-01-26 | 2007-01-26 | 熱処理装置及び熱処理方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010239142A JP2010239142A (ja) | 2010-10-21 |
| JP2010239142A5 JP2010239142A5 (enExample) | 2011-07-07 |
| JP5278376B2 true JP5278376B2 (ja) | 2013-09-04 |
Family
ID=43093154
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010124651A Active JP5278376B2 (ja) | 2010-05-31 | 2010-05-31 | 熱処理装置及び熱処理方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5278376B2 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5549552B2 (ja) | 2010-11-12 | 2014-07-16 | 東京エレクトロン株式会社 | 真空処理装置の組み立て方法及び真空処理装置 |
| JP5702657B2 (ja) * | 2011-04-18 | 2015-04-15 | 東京エレクトロン株式会社 | 熱処理装置 |
| KR101629366B1 (ko) * | 2012-03-22 | 2016-06-21 | 가부시키가이샤 히다치 고쿠사이 덴키 | 기판 처리 장치, 반도체 장치의 제조 방법 및 기판 처리 방법 |
| JP6255267B2 (ja) * | 2014-02-06 | 2017-12-27 | 株式会社日立国際電気 | 基板処理装置、加熱装置、天井断熱体及び半導体装置の製造方法 |
| JP6472356B2 (ja) * | 2015-09-11 | 2019-02-20 | 東京エレクトロン株式会社 | 熱処理装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01135734U (enExample) * | 1988-03-08 | 1989-09-18 | ||
| JPH0468522A (ja) * | 1990-07-10 | 1992-03-04 | Tokyo Electron Sagami Ltd | 縦型熱処理装置 |
| JPH06188238A (ja) * | 1992-12-02 | 1994-07-08 | Toshiba Corp | 熱処理装置と熱処理方法 |
| JP2000150526A (ja) * | 1998-11-05 | 2000-05-30 | Komatsu Electronic Metals Co Ltd | ウェーハの熱処理炉 |
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2010
- 2010-05-31 JP JP2010124651A patent/JP5278376B2/ja active Active
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| Publication number | Publication date |
|---|---|
| JP2010239142A (ja) | 2010-10-21 |
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