JP5264173B2 - レーザ出力光パルスビームパラメータ遷移補正システム - Google Patents

レーザ出力光パルスビームパラメータ遷移補正システム Download PDF

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JP5264173B2
JP5264173B2 JP2007534654A JP2007534654A JP5264173B2 JP 5264173 B2 JP5264173 B2 JP 5264173B2 JP 2007534654 A JP2007534654 A JP 2007534654A JP 2007534654 A JP2007534654 A JP 2007534654A JP 5264173 B2 JP5264173 B2 JP 5264173B2
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wavelength
burst
signal
slow transition
error signal
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Japanese (ja)
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JP2008515230A5 (https=
JP2008515230A (ja
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ロバート エヌ ジャック
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サイマー インコーポレイテッド
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70041—Production of exposure light, i.e. light sources by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H01S3/0085—Modulating the output, i.e. the laser beam is modulated outside the laser cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/10069—Memorized or pre-programmed characteristics, e.g. look-up table [LUT]

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Lasers (AREA)
JP2007534654A 2004-09-28 2005-09-19 レーザ出力光パルスビームパラメータ遷移補正システム Expired - Fee Related JP5264173B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/953,249 2004-09-28
US10/953,249 US7116695B2 (en) 2004-09-28 2004-09-28 Laser output light pulse beam parameter transient correction system
PCT/US2005/033753 WO2006036675A1 (en) 2004-09-28 2005-09-19 Laser output light pulse beam parameter transient correction system

Publications (3)

Publication Number Publication Date
JP2008515230A JP2008515230A (ja) 2008-05-08
JP2008515230A5 JP2008515230A5 (https=) 2008-11-06
JP5264173B2 true JP5264173B2 (ja) 2013-08-14

Family

ID=36119225

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007534654A Expired - Fee Related JP5264173B2 (ja) 2004-09-28 2005-09-19 レーザ出力光パルスビームパラメータ遷移補正システム

Country Status (3)

Country Link
US (1) US7116695B2 (https=)
JP (1) JP5264173B2 (https=)
WO (1) WO2006036675A1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IES20020709A2 (en) * 2002-09-02 2004-03-10 Intune Technologies Ltd Method for optimising non-linear laser control effects
US7525638B2 (en) * 2005-03-23 2009-04-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20120008653A1 (en) * 2010-07-09 2012-01-12 Ipg Photonics Corporation Laser System with Dynamically Stabilized Transient Wavelength and Method of Operating Same
JP5755068B2 (ja) * 2011-07-27 2015-07-29 株式会社小松製作所 狭帯域化レーザのスペクトル幅調整装置
JP5832581B2 (ja) * 2014-04-28 2015-12-16 株式会社小松製作所 狭帯域化レーザのスペクトル幅調整装置
US10816905B2 (en) * 2015-04-08 2020-10-27 Cymer, Llc Wavelength stabilization for an optical source
US10833471B2 (en) 2017-11-17 2020-11-10 Cymer, Llc Lithography system bandwidth control
CN114144731B (zh) * 2019-07-23 2024-04-09 西默有限公司 补偿由重复率偏差引起的波长误差的方法
WO2022157897A1 (ja) * 2021-01-21 2022-07-28 ギガフォトン株式会社 レーザシステムの制御方法、レーザシステム、及び電子デバイスの製造方法
JP7579427B2 (ja) * 2021-03-25 2024-11-07 ギガフォトン株式会社 ガスレーザ装置、及び電子デバイスの製造方法
CN117426030A (zh) * 2021-07-29 2024-01-19 极光先进雷射株式会社 放电激励型激光装置的控制方法、放电激励型激光装置和电子器件的制造方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3413510B2 (ja) * 1995-09-27 2003-06-03 株式会社小松製作所 レーザ装置
US5982800A (en) 1997-04-23 1999-11-09 Cymer, Inc. Narrow band excimer laser
US6192064B1 (en) 1997-07-01 2001-02-20 Cymer, Inc. Narrow band laser with fine wavelength control
US6078599A (en) 1997-07-22 2000-06-20 Cymer, Inc. Wavelength shift correction technique for a laser
US6721340B1 (en) 1997-07-22 2004-04-13 Cymer, Inc. Bandwidth control technique for a laser
US6317447B1 (en) 2000-01-25 2001-11-13 Cymer, Inc. Electric discharge laser with acoustic chirp correction
US6621846B1 (en) 1997-07-22 2003-09-16 Cymer, Inc. Electric discharge laser with active wavelength chirp correction
US6529531B1 (en) * 1997-07-22 2003-03-04 Cymer, Inc. Fast wavelength correction technique for a laser
US6567450B2 (en) 1999-12-10 2003-05-20 Cymer, Inc. Very narrow band, two chamber, high rep rate gas discharge laser system
US6625191B2 (en) * 1999-12-10 2003-09-23 Cymer, Inc. Very narrow band, two chamber, high rep rate gas discharge laser system
US6034978A (en) 1999-05-12 2000-03-07 Cymer, Inc. Gas discharge laser with gas temperature control
US6532247B2 (en) * 2000-02-09 2003-03-11 Cymer, Inc. Laser wavelength control unit with piezoelectric driver
US6650666B2 (en) * 2000-02-09 2003-11-18 Cymer, Inc. Laser wavelength control unit with piezoelectric driver
JP4877692B2 (ja) * 2001-03-21 2012-02-15 株式会社小松製作所 注入同期式又はｍｏｐａ方式のレーザ装置
US6690704B2 (en) 2001-04-09 2004-02-10 Cymer, Inc. Control system for a two chamber gas discharge laser
US6735225B2 (en) * 2001-06-07 2004-05-11 Lambda Physik Ag Chirp compensation method and apparatus
JP3839736B2 (ja) * 2002-02-25 2006-11-01 株式会社小松製作所 半導体露光光源用狭帯域エキシマレーザ装置
KR100545294B1 (ko) * 2002-05-10 2006-01-24 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치, 디바이스 제조방법, 성능측정방법,캘리브레이션 방법 및 컴퓨터 프로그램
JP3771876B2 (ja) * 2002-07-03 2006-04-26 日本電信電話株式会社 マルチキャリア光源

Also Published As

Publication number Publication date
US7116695B2 (en) 2006-10-03
WO2006036675A1 (en) 2006-04-06
JP2008515230A (ja) 2008-05-08
US20060072636A1 (en) 2006-04-06

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