JP5251282B2 - 紫外線センサの製造方法 - Google Patents
紫外線センサの製造方法 Download PDFInfo
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- JP5251282B2 JP5251282B2 JP2008153936A JP2008153936A JP5251282B2 JP 5251282 B2 JP5251282 B2 JP 5251282B2 JP 2008153936 A JP2008153936 A JP 2008153936A JP 2008153936 A JP2008153936 A JP 2008153936A JP 5251282 B2 JP5251282 B2 JP 5251282B2
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- Prior art keywords
- layer
- green
- zno
- laminate
- nio
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 229910052759 nickel Inorganic materials 0.000 claims description 83
- 229910052725 zinc Inorganic materials 0.000 claims description 81
- 238000000034 method Methods 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 11
- 238000010304 firing Methods 0.000 claims description 7
- 238000003825 pressing Methods 0.000 claims description 5
- 238000010030 laminating Methods 0.000 claims description 3
- 230000000630 rising effect Effects 0.000 description 10
- 230000035945 sensitivity Effects 0.000 description 10
- 239000002002 slurry Substances 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 239000002245 particle Substances 0.000 description 7
- 239000011324 bead Substances 0.000 description 5
- 229910002077 partially stabilized zirconia Inorganic materials 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 238000010298 pulverizing process Methods 0.000 description 4
- 229920002379 silicone rubber Polymers 0.000 description 4
- 239000004945 silicone rubber Substances 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 239000002270 dispersing agent Substances 0.000 description 2
- 238000007606 doctor blade method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000004014 plasticizer Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000010344 co-firing Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000001846 repelling effect Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Landscapes
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Compositions Of Oxide Ceramics (AREA)
Description
2 (Ni,Zn)O層
4 ZnO層
5 導電層
6 接合部
7 第1の端子電極
8 第2の端子電極
9 内部電極
11 段差
12 立ち上がり面
13 NiOグリーンシート
14 窓
15 ZnOグリーンシート
16 (Ni,Zn)Oグリーンシート
18 グリーン積層体
19 (Ni,Zn)Oグリーン層
20 ZnOグリーン層
21 NiOグリーン層
23 焼結積層体
24 NiO焼結層
25 NiO被覆部
27 集合積層体
Claims (3)
- ZnOがNiOに固溶してなる酸化物半導体からなる、(Ni,Zn)O層と、
前記(Ni,Zn)O層の一方主面の一部を覆うように形成されるものであって、ZnOを含む酸化物半導体からなる、ZnO層と
を含む積層体を備え、さらに、
前記(Ni,Zn)O層と前記ZnO層との接合部の少なくとも一部を露出させた状態で前記積層体の外表面上に形成され、かつ前記(Ni,Zn)O層に電気的に接続される、第1の端子電極と、
前記(Ni,Zn)O層と前記ZnO層との接合部の少なくとも一部を露出させた状態で前記積層体の外表面上に形成され、かつ前記(Ni,Zn)O層および前記ZnO層の双方に電気的に接続される、第2の端子電極と、
前記第1の端子電極に電気的に接続されながら、前記(Ni,Zn)O層内に形成される、内部電極と
を備える、紫外線センサを製造する方法であって、
前記(Ni,Zn)O層となるべき(Ni,Zn)Oグリーン層と、前記(Ni,Zn)Oグリーン層上に積層される、前記ZnO層となるべきZnOグリーン層と、前記ZnOグリーン層の一部を覆うようにZnOグリーン層上に積層される、NiOを含むNiOグリーン層とを含む、グリーン積層体を作製する工程と、
前記グリーン積層体を焼成する工程と、
前記焼成工程によって得られた焼結積層体における前記NiOグリーン層に由来するNiO焼結層と前記ZnOグリーン層に由来するZnO焼結層の、前記NiO焼結層に覆われていた部分とを除去する工程と
を備える、紫外線センサの製造方法。 - 前記グリーン積層体を作製する工程は、前記NiOグリーン層を前記ZnOグリーン層に食い込ませることによって前記グリーン積層体の主面が平坦化されるように、前記グリーン積層体を積層方向にプレスする工程を含む、請求項1に記載の紫外線センサの製造方法。
- 前記グリーン積層体を作製する工程において、前記グリーン積層体は、複数個の紫外線センサを取り出すための集合積層体の状態にあり、前記集合積層体の状態にある前記グリーン積層体を、個々の紫外線センサを得るために分割する工程をさらに備える、請求項1または2に記載の紫外線センサの製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008153936A JP5251282B2 (ja) | 2008-06-12 | 2008-06-12 | 紫外線センサの製造方法 |
Applications Claiming Priority (1)
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JP2008153936A JP5251282B2 (ja) | 2008-06-12 | 2008-06-12 | 紫外線センサの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009300206A JP2009300206A (ja) | 2009-12-24 |
JP5251282B2 true JP5251282B2 (ja) | 2013-07-31 |
Family
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JP2008153936A Expired - Fee Related JP5251282B2 (ja) | 2008-06-12 | 2008-06-12 | 紫外線センサの製造方法 |
Country Status (1)
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JP (1) | JP5251282B2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011158827A1 (ja) * | 2010-06-18 | 2011-12-22 | 株式会社 村田製作所 | 紫外線センサ、及び紫外線センサの製造方法 |
WO2011162127A1 (ja) | 2010-06-21 | 2011-12-29 | 株式会社 村田製作所 | 紫外線センサ、及び紫外線センサの製造方法 |
WO2012023445A1 (ja) * | 2010-08-20 | 2012-02-23 | 株式会社 村田製作所 | 紫外線センサ、及び紫外線センサの製造方法 |
JP5445989B2 (ja) | 2011-03-09 | 2014-03-19 | 株式会社村田製作所 | 紫外線センサ、及び紫外線センサの製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5577183A (en) * | 1978-12-07 | 1980-06-10 | Nec Corp | Photosensitive type semiconductor device |
JPS58158978A (ja) * | 1982-03-16 | 1983-09-21 | Nippon Telegr & Teleph Corp <Ntt> | 半導体受光素子 |
JPS61191063A (ja) * | 1985-02-20 | 1986-08-25 | Matsushita Electric Ind Co Ltd | 化合物半導体装置 |
JP3952076B1 (ja) * | 2006-04-25 | 2007-08-01 | 株式会社村田製作所 | 紫外線センサ |
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- 2008-06-12 JP JP2008153936A patent/JP5251282B2/ja not_active Expired - Fee Related
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