JP5250944B2 - Structure, transmissive liquid crystal display device, semiconductor circuit manufacturing method, and transmissive liquid crystal display device manufacturing method - Google Patents

Description

  The present invention relates to a structure, a transmissive liquid crystal display device, a method for manufacturing a semiconductor circuit, and a method for manufacturing a transmissive liquid crystal display device.

In general, a thin film transistor using amorphous silicon, polycrystalline silicon, or the like has been used as a transistor for driving an electronic device such as a display.
However, since amorphous silicon and polycrystalline silicon are opaque and have photosensitivity in the visible light region, a light shielding film is necessary.
For this reason, a semiconductor circuit (hereinafter referred to as a semiconductor circuit) such as a thin film transistor and its wiring becomes a problem of visibility and has been installed on the back side of the display element when viewed from the display viewing side.
A color filter is generally used for colorization of a transmissive liquid crystal display device. For the above reason, a liquid crystal encapsulating layer is formed between the color filter and the thin film transistor substrate (see Patent Document 1).
However, when the color filter and the semiconductor circuit substrate are formed at this position, for example, in the case of liquid crystal, after the liquid crystal is sealed, it is necessary to align the liquid crystal between the semiconductor circuit and the color filter. In addition, it is difficult to obtain high accuracy, which causes an increase in cost and a decrease in yield.
Japanese Patent Laid-Open No. 9-73082

  The present invention has been made in view of such circumstances, and a structure that allows easy alignment of a semiconductor circuit and a color filter, a transmissive liquid crystal display device, a method for manufacturing a semiconductor circuit, and a transmissive liquid crystal display device It aims to provide a method.

The invention according to claim 1 is a filter arrangement pattern in which a substantially transparent plate-like base material and a red filter, a green filter, and a blue filter are regularly arranged on one surface in the thickness direction of the base material. a color filter having the said red filter surface facing the opposite side of the color filter is the base material, the green filter, and a semiconductor circuit provided in alignment with each of the blue filter, in the structure On the filter array pattern, a transparent resin overcoat for reducing unevenness on the color filter is provided, and the semiconductor circuit includes a substantially transparent thin film transistor and an electric current connected to the transistor. a wiring constituted by a substantially transparent conductive material having contacts, substantially transparent auxiliary capacitor The thin film transistor is a bottom contact type, has a substantially transparent source electrode, drain electrode, gate electrode, semiconductor active layer, and gate insulating film, and the semiconductor active layer is metal oxide The auxiliary capacitor electrode is made of the same material as that of the gate electrode, and is formed of the same material as the main material or the organic material as a main component. .
According to the first aspect of the present invention, by providing a substantially transparent semiconductor circuit on the color filter, it is possible to easily align the color filter and the semiconductor circuit without affecting the visibility. .
According to a second aspect of the present invention, there is provided a filter arrangement pattern in which a substantially transparent plate-like base material and a red filter, a green filter, and a blue filter are regularly arranged on one surface in the thickness direction of the base material. A color filter, a semiconductor circuit provided in alignment with each of the red filter, the green filter, and the blue filter on a surface of the color filter facing the opposite side of the base material, and the semiconductor circuit being the color filter A transmissive liquid crystal display device comprising a transmissive liquid crystal display element provided on a surface facing the opposite side of the filter and driven by the semiconductor circuit, wherein the transmissive liquid crystal display device is disposed on the color filter on the filter arrangement pattern. overcoat transparent resin is provided to reduce the unevenness, the semiconductor circuit is substantially transparent thin film transitional A motor and a substantially wire constituted by a transparent conductive material having an electrical contact that is electrically connected to the transistor, a substantially transparent auxiliary capacitor electrode, and a substantially transparent pixel electrodes, The thin film transistor is a bottom contact type and has a substantially transparent source electrode, drain electrode, gate electrode, semiconductor active layer, and gate insulating film, and the semiconductor active layer is a material mainly composed of a metal oxide. Alternatively, it is made of an organic material as a main component, an interlayer insulating film is formed on the thin film transistor, and the pixel electrode electrically connected to the drain electrode is provided on the interlayer insulating film. the auxiliary capacitor electrode are formed on the same layer with the gate electrode of the same material, covered the whole by the pixel electrode, and wherein the That is a transmission type liquid crystal display device.
According to the invention of claim 2, by providing a substantially transparent semiconductor circuit on the color filter, the color filter and the semiconductor circuit can be easily aligned without affecting the visibility. .
In addition, the conventional transmissive liquid crystal display device requires two substrates, a color filter substrate and a semiconductor circuit substrate, but the transmissive display device of the present invention requires only one substrate. Therefore, the cost of the base material can be reduced and the weight of the image display device is reduced. Here, the transmissive liquid crystal display element is a structure composed of an alignment film / liquid crystal / alignment film / common electrode / substantially transparent substrate.
According to the first and second aspects of the present invention, a transparent thin film transistor having excellent characteristics can be realized by using a metal oxide semiconductor.
According to the first and second aspects of the present invention, a transparent thin film transistor having excellent characteristics can be realized by using a material mainly composed of an organic substance.
The invention of claim 3 has a filter arrangement pattern in which red filters, green filters, and blue filters are regularly arranged on one surface in the thickness direction of a substantially transparent plate-like substrate, and the filter arrangement On the pattern, a process of providing a color filter having a transparent resin overcoat that reduces unevenness;
The color filter has a substantially transparent source electrode, drain electrode, gate electrode, semiconductor active layer, and gate insulating film on a surface facing the opposite side of the substrate, and the semiconductor active layer is mainly made of metal oxide. A thin film transistor that is a bottom contact type made of a material that is a component or an organic material as a main component, a wiring that is constituted by a substantially transparent conductive material having an electrical contact that is conducted to the thin film transistor, and the gate electrode A semiconductor circuit having an auxiliary capacitor electrode and a substantially transparent pixel electrode formed at the same time using the same material in the same process is aligned with each of the red filter, the green filter, and the blue filter. And providing a process,
An interlayer insulating film is formed on the thin film transistor, and the pixel electrode electrically connected to the drain electrode is provided on the interlayer insulating film, and the auxiliary capacitor electrode is entirely formed of the pixel. A method of manufacturing a semiconductor circuit, wherein the semiconductor circuit is covered with an electrode.
According to the invention of claim 3, the alignment of the color filter and the semiconductor circuit is facilitated without affecting the visibility, and the manufacturing cost can be reduced.

  According to the present invention, the substantially transparent semiconductor circuit is formed on the color filter provided on the substantially transparent base material and disposed on the front surface of the transmissive liquid crystal display element, thereby affecting the visibility. Therefore, the alignment of the color filter and the semiconductor circuit is facilitated, which is advantageous in reducing the manufacturing cost.

Although embodiments of the present invention are illustrated and described, the present invention is not limited to these.
1 and 2 show an embodiment of the present invention. FIG. 1 is a partial sectional view of almost one pixel of a transmissive liquid crystal display device of the present invention, and FIG. 1 is a schematic sectional view of the transmissive liquid crystal display device of the present invention.
The base material 3 and the liquid crystal display element base material 18 that form a color filter and a transparent semiconductor circuit must be substantially transparent.
Here, “substantially transparent” means that the transmittance is 70% or more within a wavelength range of 400 nm to 700 nm which is visible light.
Specifically, polymethyl methacrylate, polyacrylate, polycarbonate, polystyrene, polyethylene sulfide, polyethersulfone, polyolefin, polyethylene terephthalate, polyethylene naphthalate, cycloolefin polymer, polyethersulfene, triacetylcellulose, polyvinyl fluoride film, ethylene -Use tetrafluoroethylene copolymer resin, weather resistant polyethylene terephthalate, weather resistant polypropylene, glass fiber reinforced acrylic resin film, glass fiber reinforced polycarbonate, transparent polyimide, fluororesin, cyclic polyolefin resin, glass, quartz, etc. Can do. These may be used as a single substrate, but a composite substrate in which two or more kinds are laminated can also be used.
When the substrate is an organic film, it is also preferable to form a transparent gas barrier layer in order to increase the durability of the device. Examples of the gas barrier layer include, but are not limited to, Al2O3, SiO2, SiN, SiON, SiC, diamond-like carbon (DLC), and the like. These gas barrier layers can also be used by laminating two or more layers. Moreover, a gas barrier layer may be provided only on one side of the organic film substrate, or may be provided on both sides. The gas barrier layer is formed by vapor deposition, ion plating, sputtering, laser ablation, plasma CVD (Chemical Vapor Deposition), hot wire CVD, sol-gel, or the like, but is not limited thereto.

The substantially transparent gate electrode, source electrode, drain electrode, auxiliary capacitor electrode, pixel electrode, scanning line electrode, signal line electrode and common electrode of the transmissive liquid crystal display element of the present invention include indium oxide (In2O3), oxidation Tin (SnO2), zinc oxide (ZnO), cadmium oxide (CdO), indium cadmium oxide (CdIn2O4), cadmium tin oxide (Cd2SnO4), zinc tin oxide (Zn2SnO4), indium zinc oxide (In-Zn-O), etc. An oxide material may be used.
Moreover, what doped this oxide material with the impurity is used suitably.
For example, indium oxide doped with tin (Sn), molybdenum (Mo), titanium (Ti), tin oxide doped with antimony (Sb) or fluorine (F), zinc oxide with indium, aluminum, gallium ( For example, doped with Ga).
Among these, indium tin oxide (commonly called ITO) in which indium oxide is doped with tin (Sn) is particularly preferably used because of high transparency and low resistivity.
In addition, a laminate in which a plurality of thin films of the conductive oxide material and a metal such as Au, Ag, Cu, Cr, Al, Mg, and Li are stacked can be used. In this case, a three-layer structure in which a conductive oxide thin film / metal thin film / conductive oxide thin film is laminated in order in order to prevent oxidation or deterioration with time of the metal material is particularly preferably used.
In addition, it is preferable to make the metal thin film layer as thin as possible so that light reflection and light absorption at the metal thin film layer do not disturb the visibility of the display device. Specifically, it is preferably 1 nm or more and 20 nm or less.
An organic conductive material such as PEDOT (polyethylenedioxythiophene) can also be suitably used.
The gate electrode, the source electrode, the drain electrode, the auxiliary capacitor electrode, the pixel electrode, the scanning line electrode, the signal line electrode, and the common electrode may be made of the same material, or may be made of different materials. However, in order to reduce the number of steps, it is more desirable that the gate electrode and the auxiliary capacitor electrode, the source electrode and the drain electrode are made of the same material. These transparent electrodes can be formed by vacuum deposition, ion plating, sputtering, laser ablation, plasma CVD, photo CVD, hot wire CVD or screen printing, letterpress printing, inkjet printing, etc. However, it is not limited to these.

As the substantially transparent semiconductor active layer used in the display device of the present invention, an oxide semiconductor material or an organic semiconductor material can be preferably used.
The oxide semiconductor material is an oxide containing one or more elements of zinc, indium, tin, tungsten, magnesium, gallium, zinc oxide, indium oxide, indium zinc oxide, tin oxide, tungsten oxide (WO), oxide Known materials such as zinc gallium indium (In-Ga-Zn-O) can be used, but the material is not limited to these. These materials are substantially transparent and have a band gap of 2.8 eV or more, and preferably a band gap of 3.2 eV or more. The structure of these materials may be single crystal, polycrystal, microcrystal, crystal / amorphous mixed crystal, nanocrystal scattered amorphous, or amorphous.
The thickness of the semiconductor layer is desirably at least 20 nm.
The oxide semiconductor layer is formed by a sputtering method, a pulse laser deposition method, a vacuum evaporation method, a CVD method, an MBE (Molecular Beam Epitaxy) method, a sol-gel method, or the like, but preferably a sputtering method or a pulse laser deposition method. These are vacuum evaporation and CVD. Examples of sputtering include RF magnetron sputtering, DC sputtering, vacuum deposition includes heating deposition, electron beam deposition, ion plating, and CVD includes hot wire CVD and plasma CVD. Absent.

  Organic semiconductor materials include acenes such as pentacene and tetracene, naphthalenetetracarboxylic dianhydride (NTCDA) and naphthalenetetracarboxylic diimide (NTCDI), or polythiophene, polyaniline, poly-p-phenylene vinylene, polyacetylene, polydiacetylene. Examples thereof include, but are not limited to, conjugated polymers such as polythienylene vinylene. These materials are substantially transparent and have a band gap of 2.8 eV or more, and preferably a band gap of 3.2 eV or more. These organic semiconductor materials are formed by screen printing, reversal printing, ink-jet method, spin coating, dip coating, vapor deposition, or the like, but are not limited thereto.

Although the material used for the gate insulating film 8 of the thin film transistor used in the present invention is not particularly limited, silicon oxide, silicon nitride, silicon oxynitride (SiNxOy), aluminum oxide, tantalum oxide, yttrium oxide, hafnium oxide, hafnium aluminate Inorganic materials such as zirconia and titanium oxide, or polyacrylates such as PMMA (polymethyl methacrylate), PVA (polyvinyl alcohol), PS (polystyrene), transparent polyimide, polyester, epoxy, polyvinylphenol, polyvinyl alcohol, etc. Although it is mentioned, it is not limited to these. In order to suppress the gate leakage current, the resistivity of the insulating material is preferably 10 ¹¹ Ωcm or more, and preferably 10 ¹⁴ Ωcm or more.
The insulating layer is formed using a method such as vacuum deposition, ion plating, sputtering, laser ablation, plasma CVD, photo CVD, hot wire CVD, spin coating, dip coating, or screen printing. The thickness of the insulating layer is desirably 50 nm to 2 μm. These gate insulating films may be used as a single layer, may be a laminate of a plurality of layers, or may have a composition inclined in the growth direction.

The structure of the thin film transistor used in the present invention is not particularly limited. Either a bottom contact type or a top contact type may be used. However, when an organic semiconductor is used, a bottom contact type in which elements are formed in the order of a gate electrode, a gate insulating film, a source electrode and a drain electrode, and an organic semiconductor is desirable. This is because if the organic semiconductor is exposed to a plasma process or the like in the next step after the organic semiconductor is formed, the semiconductor layer is damaged. Further, it is preferable to increase the aperture ratio by providing the interlayer insulating film 12 on the thin film transistor used in the present invention and further providing the pixel electrode 13 electrically connected to the drain electrode thereon.
The interlayer insulating film 12 is not particularly limited as long as it is insulative and substantially transparent. For example, silicon oxide, silicon nitride, silicon oxynitride (SiNxOy), aluminum oxide, tantalum oxide, yttrium oxide, hafnium oxide, hafnium aluminate, zirconia oxide, titanium oxide and other inorganic materials, or PMMA (polymethyl methacrylate) Examples thereof include, but are not limited to, polyacrylates such as PVA (polyvinyl alcohol), PS (polystyrene), transparent polyimide, polyester, epoxy, polyvinylphenol, and polyvinyl alcohol. The interlayer insulating film may be the same material as the gate insulating film or may be a different material. These interlayer insulating films may be used as a single layer, or a laminate of a plurality of layers may be used.
In the case of an element having a bottom gate structure, it is also preferable to provide a protective film that covers the semiconductor layer. By using the protective film, it is possible to prevent the semiconductor layer from being changed with time due to humidity or the like or affected by the interlayer insulating film. As protective film, inorganic materials such as silicon oxide, silicon nitride, silicon oxynitride (SiNxOy), aluminum oxide, tantalum oxide, yttrium oxide, hafnium oxide, hafnium aluminate, zirconia oxide, titanium oxide, or PMMA (polymethyl methacrylate) ), And the like, but not limited to these. PVA (polyvinyl alcohol), PS (polystyrene), transparent polyimide, polyester, epoxy, polyvinylphenol, polyvinyl alcohol, fluororesin and the like. These protective films may be used as a single layer or may be a laminate of a plurality of layers.

  The pixel electrode of the present invention must be electrically connected to the drain electrode of the thin film transistor. Specifically, the interlayer insulation film is patterned by screen printing or the like, and the interlayer insulation film is not provided on the drain electrode, or the interlayer insulation film is applied over the entire surface and then correlated with laser beams, etc. For example, a method of making a hole in the film.

The transmissive color filter 4 used in the present invention has three types of red filter (R), green filter (G), and blue color filter (B), or red filter (R), green filter (G), and blue color filter ( Although it is preferable that it is formed from B) and a black matrix (BM), it is not limited to these.
In other words, the transmissive color filter is provided on one surface in the thickness direction of a substantially transparent plate-like substrate, and has a filter arrangement pattern in which red filters, green filters, and blue filters are regularly arranged. ing.
In the color filter coloring layer, the respective color filters are appropriately patterned in a linear (stripe) matrix shape having a predetermined width or a rectangular matrix shape having a predetermined size. In addition, a transparent overcoat is suitably provided on the color filter layer in order to protect the color pattern and reduce the unevenness of the color filter layer after forming the colored pattern.

Example 1
1 and 2 are sectional views of the first embodiment. FIG. 1 is a partial cross-sectional view of approximately one pixel of the transmissive display device of this embodiment, and FIG. 2 is a schematic cross-sectional view of the transmissive display device of this embodiment.
A non-alkali glass 1737 (thickness 0.5 mm) manufactured by Corning Inc. was used as the substantially transparent plate-like substrate 3, and R (red), G (green), B ( A blue color filter layer 4 was formed, and a protective layer made of a transparent resin was formed thereon.
Subsequently, an ITO thin film having a thickness of 50 nm was formed on the color filter (color filter layer 4), in other words, on the surface of the color filter facing the opposite side of the substrate 3 by a DC magnetron sputtering method. Then, the ITO thin film was patterned into a desired shape while being aligned with each pixel of the color filter layer, and a gate electrode 6 and an auxiliary capacitor electrode 7 were obtained.
Further, a SiON thin film having a thickness of 150 nm was formed thereon by RF sputtering using a silicon nitride (Si 3 N 4) target to form a gate insulating film 8.
Further, as the semiconductor active layer 11, an InGaZnO4 target was used to form an amorphous In-Ga-Zn-O thin film with a thickness of 40 nm by RF sputtering and patterned into a desired shape.
On top of that, a resist was applied, dried and developed, and then an ITO film was formed to 50 nm by DC magnetron sputtering, and lift-off was performed to form a source electrode 9 and a drain electrode 10.
Further, the interlayer resin film 12 was formed by printing a 5 μm pattern of an epoxy resin using a printing method.
Finally, an ITO film having a thickness of 100 nm was formed by magnetron sputtering and patterned to form a pixel electrode 13.
In other words, on the surface of the color filter facing the opposite side of the substrate 3, a substantially transparent thin film transistor and a wiring made of a substantially transparent conductive material having an electrical contact conducted to the thin film transistor are provided. A semiconductor circuit is provided in alignment with the filter array pattern.
Table 1 shows the conditions for forming each film. An alignment film 22 was applied on the substantially transparent semiconductor circuit thus prepared.
In addition, a base material on which a thin film transistor is formed by applying an alignment film 24 on non-alkali glass 1737 (thickness 0.5 mm) manufactured by Corning, which has an ITO thin film of 70 nm as a common electrode, is disposed via a spacer. Liquid crystal was sealed between the spacers.
Finally, the retardation plate 20 and the polarizing plate 21 were arranged on the surface of the substantially transparent base material 3 where the color filter was not formed, and the display device of Example 1 was produced.
As a result, the display device has a substantially transparent substrate, a color filter, a substantially transparent thin film transistor, and a wiring constituted by a substantially transparent conductive material having electrical contacts with the transistor as viewed from the viewing side. The semiconductor circuit is characterized by comprising a transmissive liquid crystal display element in this order.

(Example 2)
1 and 2 are sectional views of this embodiment. FIG. 1 is a partial cross-sectional view of approximately one pixel of the transmissive display device of this embodiment, and FIG. 2 is a schematic cross-sectional view of the transmissive display device of this embodiment.
A non-alkali glass 1737 (thickness 0.5 mm) manufactured by Corning Inc. was used as the substantially transparent plate-like substrate 3, and R (red), G (green), B ( A blue color filter layer 4 was formed, and a protective layer made of a transparent resin was formed thereon.
Subsequently, an ITO thin film having a thickness of 50 nm was formed on the color filter (color filter layer 4), in other words, on the surface of the color filter facing the opposite side of the substrate 3 by a DC magnetron sputtering method. Then, the ITO thin film was patterned into a desired shape while being aligned with each pixel of the color filter layer, and a gate electrode 6 and an auxiliary capacitor electrode 7 were obtained.
Further, a SiON thin film having a thickness of 150 nm was formed thereon by RF sputtering using a silicon nitride (Si 3 N 4) target to form a gate insulating film 8.
Further, as the semiconductor active layer 11, a ZnO thin film having a thickness of 40 nm was formed by RF sputtering using a ZnO target intentionally not mixed with a dopant, and was patterned into a desired shape. On top of that, a resist was applied, dried and developed, and then an ITO film was formed to 50 nm by DC magnetron sputtering, and lift-off was performed to form a source electrode 9 and a drain electrode 10.
Further, the interlayer resin film 12 was formed by printing a 5 μm pattern of an epoxy resin using a printing method. Finally, an ITO film having a thickness of 100 nm was formed by magnetron sputtering and patterned to form a pixel electrode 13.
In other words, on the surface of the color filter facing the opposite side of the substrate 3, a substantially transparent thin film transistor and a wiring made of a substantially transparent conductive material having an electrical contact conducted to the thin film transistor are provided. A semiconductor circuit is provided in alignment with the filter array pattern.
Table 2 shows the conditions for forming each film. An alignment film 22 was applied on the substantially transparent semiconductor circuit thus prepared.
Further, an aluminum foil (thickness: 25 μm) is used as the conductive base material 27, a base material on which an alignment film 24 is applied on the aluminum foil and a semiconductor circuit is formed is disposed via a spacer, and then a liquid crystal is placed between the spacers. Enclosed.
Finally, the phase difference plate 20 and the polarizing plate 21 were arranged on the surface of the substantially transparent base material 3 where the color filter was not formed to produce the display device of Example 2.
As a result, the display device has a substantially transparent substrate, a color filter, a substantially transparent thin film transistor, and a wiring constituted by a substantially transparent conductive material having electrical contacts with the transistor as viewed from the viewing side. The semiconductor circuit is characterized by comprising a transmissive liquid crystal display element in this order.

As shown in Example 1 and Example 2, a substantially transparent semiconductor circuit is formed on a color filter provided on a substantially transparent substrate, and is disposed on the front surface of the transmissive liquid crystal display element. Thus, unlike the conventional case, no liquid crystal is interposed between the semiconductor circuit and the color filter, and therefore, the alignment of the color filter and the semiconductor circuit is easy and the manufacturing cost is low without affecting the visibility. A transmissive display device can be realized.
The above is an example, and it will be apparent to those skilled in the art that various improvements and modifications can be made based on the above description.

It is a schematic sectional drawing of the display apparatus of this invention. 1 is a partial cross-sectional view of a transmissive liquid crystal display device according to an embodiment of the present invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Transmission type liquid crystal display element, 2 ... Substantially transparent semiconductor circuit, 3 ... Substantially transparent base material, 4 ... Color filter, 5 ... Gate electrode, 6 ... Auxiliary capacitor electrode, 7 ... Gate insulating film, DESCRIPTION OF SYMBOLS 8 ... Source electrode, 9 ... Drain electrode, 10 ... Semiconductor active layer, 11 ... Interlayer insulating film, 12 ... Pixel electrode, 13 ... Polarizing plate 1, 14 ... Alignment film 1, 15 ... Liquid crystal, 16 ... Alignment film 2, 17 ... Common electrode, 18 ... Substantially transparent substrate for liquid crystal display element, 19 ... Polarizing plate 2.

Claims (3)

A substantially transparent plate-like substrate;
A color filter having a filter arrangement pattern in which red filters, green filters, and blue filters are regularly arranged on one surface in the thickness direction of the substrate;
A semiconductor circuit provided in alignment with each of the red filter, the green filter, and the blue filter on a surface of the color filter facing the opposite side of the substrate ;
A structure ,
On the filter arrangement pattern, a transparent resin overcoat that reduces the unevenness on the color filter is provided,
The semiconductor circuit includes a substantially transparent thin film transistor, a wiring made of a substantially transparent conductive material having an electrical contact conducted to the transistor, and a substantially transparent auxiliary capacitor electrode. ,
The thin film transistor is a bottom contact type and has a substantially transparent source electrode, drain electrode, gate electrode, semiconductor active layer, and gate insulating film, and the semiconductor active layer is a material mainly composed of a metal oxide. Or it is made of a material mainly composed of organic matter,
The auxiliary capacitor electrode is formed in the same layer using the same material as the gate electrode,
A structure characterized by that. A substantially transparent plate-like substrate;
A color filter having a filter arrangement pattern in which red filters, green filters, and blue filters are regularly arranged on one surface in the thickness direction of the substrate;
A semiconductor circuit provided in alignment with each of the red filter, the green filter, and the blue filter on the surface of the color filter facing the opposite side of the substrate;
A transmissive liquid crystal display element provided on a surface facing the opposite side of the color filter and driven by the semiconductor circuit ;
A transmissive liquid crystal display device ,
On the filter arrangement pattern, a transparent resin overcoat that reduces the unevenness on the color filter is provided,
The semiconductor circuit includes a substantially transparent thin film transistor, a wiring constituted by a substantially transparent conductive material having an electrical contact conducted to the transistor, a substantially transparent auxiliary capacitor electrode, And a transparent pixel electrode,
The thin film transistor is a bottom contact type and has a substantially transparent source electrode, drain electrode, gate electrode, semiconductor active layer, and gate insulating film, and the semiconductor active layer is a material mainly composed of a metal oxide. Or it is made of a material mainly composed of organic matter,
An interlayer insulating film is formed on the thin film transistor, and the pixel electrode electrically connected to the drain electrode is provided on the interlayer insulating film,
The auxiliary capacitor electrode is formed in the same layer using the same material as the gate electrode, and is entirely covered by the pixel electrode.
A transmissive liquid crystal display device. Substantially one surface in the thickness direction of the transparent plate-like substrate, a red filter, a green filter, have a filter arrangement pattern blue filter are regularly arranged, on the filter array pattern, uneven Providing a color filter having a transparent resin overcoat to reduce
The color filter has a substantially transparent source electrode, drain electrode, gate electrode, semiconductor active layer, and gate insulating film on a surface facing the opposite side of the substrate, and the semiconductor active layer is mainly made of metal oxide. a thin film transistor is a bottom-contact type made of a material composed mainly of material or organic material as a component, wiring and constituted by a substantially transparent conductive material having an electrical contact that is electrically connected to the thin film transistor, said gate electrode A semiconductor circuit having an auxiliary capacitor electrode and a substantially transparent pixel electrode formed at the same time using the same material in the same process is aligned with each of the red filter, the green filter, and the blue filter. A process of providing and
Only including,
An interlayer insulating film is formed on the thin film transistor, and the pixel electrode electrically connected to the drain electrode is provided on the interlayer insulating film,
The auxiliary capacitor electrode is entirely covered by the pixel electrode,
A method of manufacturing a semiconductor circuit.

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