JP5247749B2 - 成膜装置 - Google Patents
成膜装置 Download PDFInfo
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- JP5247749B2 JP5247749B2 JP2010063635A JP2010063635A JP5247749B2 JP 5247749 B2 JP5247749 B2 JP 5247749B2 JP 2010063635 A JP2010063635 A JP 2010063635A JP 2010063635 A JP2010063635 A JP 2010063635A JP 5247749 B2 JP5247749 B2 JP 5247749B2
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- 230000008021 deposition Effects 0.000 title claims description 7
- 239000007789 gas Substances 0.000 claims description 133
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 90
- 230000015572 biosynthetic process Effects 0.000 claims description 84
- 239000012495 reaction gas Substances 0.000 claims description 52
- 238000004544 sputter deposition Methods 0.000 claims description 46
- 239000001569 carbon dioxide Substances 0.000 claims description 45
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 45
- 229910052751 metal Inorganic materials 0.000 claims description 36
- 239000002184 metal Substances 0.000 claims description 36
- 238000000151 deposition Methods 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- 239000010408 film Substances 0.000 description 245
- 239000000758 substrate Substances 0.000 description 38
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 35
- 229910001882 dioxygen Inorganic materials 0.000 description 35
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 30
- 239000010409 thin film Substances 0.000 description 24
- 230000003287 optical effect Effects 0.000 description 23
- 230000000052 comparative effect Effects 0.000 description 22
- 238000000034 method Methods 0.000 description 22
- 238000006243 chemical reaction Methods 0.000 description 18
- 230000008569 process Effects 0.000 description 17
- 229910052786 argon Inorganic materials 0.000 description 15
- 238000000137 annealing Methods 0.000 description 11
- 239000000047 product Substances 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 229910010413 TiO 2 Inorganic materials 0.000 description 9
- 239000011521 glass Substances 0.000 description 9
- 230000007704 transition Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 230000009257 reactivity Effects 0.000 description 6
- 150000002736 metal compounds Chemical class 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- 230000001590 oxidative effect Effects 0.000 description 5
- 125000004430 oxygen atom Chemical group O* 0.000 description 5
- 230000007812 deficiency Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000002923 metal particle Substances 0.000 description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000005546 reactive sputtering Methods 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 206010028980 Neoplasm Diseases 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Images
Description
本願発明の成膜装置は、請求項1記載の通り、スパッタ成膜源、スパッタガス源、及び反応ガス源の両原料供給源を真空室内に設けた成膜装置において、前記スパッタ成膜源が金属ターゲットから成り、前記反応ガス源からの反応ガスが二酸化炭素ガスを含有し、前記反応ガス源から供給される二酸化炭素ガスの供給量が、前記スパッタガス源から供給されるスパッタガスの供給量以下で、かつ、高速成膜領域の範囲内で二酸化炭素ガス及びスパッタガスの両ガス流量比を保つように両ガス流量を制御する制御系を備えたことを特徴とする。
[実施例1]及び[実施例2]においてアニール処理を行う直前の交互多層膜に対して反射率特性を測定し、図5に反射率特性図として示した。
[実施例1]、[実施例2]及び[比較例1]で使用した二酸化炭素ガスを酸素ガスで代替したときの比較対照を行う目的で本比較例2を行った。
[比較例2]においてアニール処理を行う直前の交互多層膜に対して反射率特性を測定し、図6に反射率特性図として示した。
反応ガスとして酸素ガスを使用した[比較例2]及び[比較例3]の成膜速度の相違による比較対照を行う目的で本比較例4を行った。
5 Tiターゲット(スパッタ成膜源)
6 Siターゲット(スパッタ成膜源)
9 Tiカソード用交流電源(スパッタ成膜源)
13 Siカソード用交流電源(スパッタ成膜源)
14 スパッタガス導入口(スパッタ成膜源)
15 反応ガス導入口(反応ガス源)
Claims (3)
- スパッタ成膜源、スパッタガス源、及び反応ガス源の両原料供給源を真空室内に設けた成膜装置において、
前記スパッタ成膜源が金属ターゲットから成り、前記反応ガス源からの反応ガスが二酸化炭素ガスを含有し、前記反応ガス源から供給される二酸化炭素ガスの供給量が、前記スパッタガス源から供給されるスパッタガスの供給量以下で、かつ、高速成膜領域の範囲内で二酸化炭素ガス及びスパッタガスの両ガス流量比を保つように両ガス流量を制御する制御系を備えたことを特徴とする成膜装置。 - 前記金属ターゲットは、金属種類ごとに複数箇所に設けて成ることを特徴とする請求項1に記載の成膜装置。
- 前記金属種類は、Si、Ti、Ta、Nb、Al、Mg、Sb、Zr、Zn、Sn及びInのいずれかから成ることを特徴とする請求項2に記載の成膜装置。
Priority Applications (1)
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JP2010063635A JP5247749B2 (ja) | 2010-03-19 | 2010-03-19 | 成膜装置 |
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JP2010063635A JP5247749B2 (ja) | 2010-03-19 | 2010-03-19 | 成膜装置 |
Related Parent Applications (1)
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JP2004014553A Division JP4557558B2 (ja) | 2004-01-22 | 2004-01-22 | 成膜方法 |
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JP2010150670A JP2010150670A (ja) | 2010-07-08 |
JP5247749B2 true JP5247749B2 (ja) | 2013-07-24 |
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Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN111118463B (zh) * | 2019-12-25 | 2022-04-01 | 中国科学院兰州化学物理研究所 | 利用二氧化碳制备高硬减摩耐蚀TiCxOy涂层的方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3840735B2 (ja) * | 1996-04-12 | 2006-11-01 | 旭硝子株式会社 | 酸化物膜の製造方法 |
JPH10183334A (ja) * | 1996-12-26 | 1998-07-14 | Asahi Glass Co Ltd | 酸化タングステン膜の成膜方法 |
JP4280890B2 (ja) * | 2001-07-23 | 2009-06-17 | 旭硝子株式会社 | スパッタ装置及びスパッタ成膜方法 |
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