JP5247375B2 - Exposure apparatus and device manufacturing method - Google Patents

Description

    The present invention relates to an exposure apparatus and a device manufacturing method.

  Liquid crystal display devices and semiconductor devices are manufactured by a so-called photolithography technique in which a pattern formed on a mask is transferred onto a photosensitive substrate.

  An exposure apparatus used in such a photolithography process includes a substrate stage that holds a photosensitive substrate and moves two-dimensionally, and a mask stage that holds a mask (original) having a pattern and moves two-dimensionally. Then, the photosensitive substrate is exposed via the pattern formed on the mask and the projection optical system while moving (scanning) the mask stage and the substrate stage.

  As an exposure apparatus, mainly, a batch type exposure apparatus that simultaneously transfers the entire mask pattern onto the photosensitive substrate, and a mask pattern that is continuously transferred onto the photosensitive substrate while synchronously scanning the mask stage and the substrate stage. Two types of scanning exposure apparatuses are known. Among these, when manufacturing a liquid crystal display device, since the enlargement of a display area is requested | required, the scanning exposure apparatus is mainly used.

  By the way, when the mask is enlarged, the mask is bent by its own weight. When the mask is bent, the pattern transferred to the photosensitive substrate is distorted by the bent mask.

  As a technique for correcting the deflection of the mask, in Patent Document 1, a chamber member (container) is provided on the upper surface of the mask, and the pressure of the space formed between the container and the mask is set to a negative pressure, thereby reducing the mask. It is disclosed to correct the deflection.

Further, in Patent Document 2, in order to prevent the mask held by the mask holder from being greatly bent by its own weight, the mask holder can be deformed into a convex shape by an external force applied from the external force applying mechanism to the mask holder. It is disclosed.
JP 59-96730 A JP 2006-178318 A

  Since the transmissive mask is supported at the periphery thereof, especially when the mask is enlarged, the mask is bent due to its own weight, and the margin of focus depth of the projection system is used in the mask. For this reason, it is necessary to correct the deflection of the mask by using air pressure control or the like as in the prior art. However, even if the air pressure control technique is used, the deflection due to the flatness of the mask holding portion cannot be effectively corrected.

  Also, the degree of freedom for adjusting the deflection of the mask is small even by the above-described technique for deforming the mask holder into a convex shape.

The present invention has been made in view of such problems, and provides an exposure apparatus that is advantageous for adjusting the deflection and position of an original and a device manufacturing method using the exposure apparatus.

An exposure apparatus according to one aspect of the present invention is an exposure apparatus that has a projection optical system and exposes a substrate pattern and the substrate through the projection optical system, and is an original stage that holds and moves the original A measuring unit that measures a position in the direction of the optical axis of the projection optical system with respect to a measurement location of the original held by the original stage, and a first pressure that adjusts the pressure in the space in contact with the upper or lower surface of the original An adjustment unit; a plurality of holding units provided on the original stage for holding the original; a second adjustment unit for adjusting the position of each of the plurality of holding units in the direction of the optical axis; and a plurality of the originals the have a control unit for controlling the first adjusting section and the second adjustment unit based on a plurality of the position measured by the measuring unit with respect to the measuring points, the plurality of holders, said light On the axis A plurality of first holding portions respectively provided along intersecting first axes, and a plurality of second holding portions provided respectively along a second axis perpendicular to both the optical axis and the first axis. The plurality of first holding units and the plurality of second holding units are configured to be independently movable, and the first adjustment unit adjusts the pressure of the space. The amount of deflection of the original plate is adjusted, and the second adjustment unit adjusts the position of each of the plurality of first holding units and the plurality of second holding units, whereby the original plate in the direction of the optical axis is adjusted. Adjust the position .

An exposure apparatus according to another aspect of the present invention is an exposure apparatus that has a projection optical system and performs exposure of a substrate through a pattern of the original and the projection optical system, and the original that holds and moves the original A stage, a measuring unit that measures a position in the direction of the optical axis of the projection optical system with respect to a measurement location of the original held on the original stage, and a first pressure that adjusts the pressure in the space in contact with the upper or lower surface of the original An adjustment unit, a control unit that controls the first adjustment unit based on the plurality of positions measured by the measurement unit with respect to a plurality of measurement locations of the original , and the original plate provided on the original stage. a plurality of holding portions for holding, have a second adjusting unit for adjusting the position in the direction of the optical axis of each of the plurality of holding portions, the plurality of holding portions, the first orthogonal to the optical axis Along the axis A plurality of first holding portions provided respectively, and a plurality of second holding portions provided respectively along a second axis orthogonal to both the optical axis and the first axis, The first holding unit and the plurality of second holding units are configured to be independently movable, and the first adjusting unit adjusts the pressure of the space to adjust the deflection amount of the original. The second adjusting unit adjusts the position of the original in the direction of the optical axis by adjusting the positions of the plurality of first holding units and the plurality of second holding units .

  Other objects and features of the present invention are illustrated in the following examples.

According to the present invention, it is possible to provide an exposure apparatus that is advantageous for adjusting the deflection and position of an original and a device manufacturing method using the exposure apparatus.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In each figure, the same members are denoted by the same reference numerals, and redundant description is omitted.

  First, the configuration of the exposure apparatus in the present embodiment will be described.

  1 and 2 are a perspective view and a side view, respectively, showing a schematic configuration of an exposure apparatus in the present embodiment. FIG. 3 is an enlarged view of a part of the exposure apparatus shown in FIG. FIG. 4 is a sectional view of the periphery of the mask stage of the exposure apparatus shown in FIGS.

  1 to 3, the exposure apparatus EX includes a mask stage MST (original stage) that supports a mask M (original) on which a pattern is formed, and a substrate stage PST that supports a photosensitive substrate P. The exposure apparatus EX holds an illumination optical system IL that illuminates the mask M supported by the mask stage MST with the exposure light EL, and an image of the pattern of the mask M illuminated with the exposure light EL on the substrate stage PST. A projection optical system PL for projecting onto the photosensitive substrate P. Further, the exposure apparatus EX includes a measurement device 60 (measurement unit) that can measure the flatness (deflection amount) of the mask M.

  An upper part of the mask M is provided with a deflection control unit 1 (a member surrounding the space S) that forms a space S in which the surface of the mask M is a part of the boundary and performs the deflection control. The deflection control unit 1 includes a light transmissive member 3 as a partition that transmits exposure light, and a frame 2 for arranging the light transmissive member 3 above the mask M. The space S is formed by disposing the light transmission member 3 so as to face the upper surface of the mask M.

  The deflection control unit 1 includes a pressure control pipe 30 for controlling the pressure in the space S and a pressure control source (not shown). The pressure control source is connected to the pressure control pipe 30 and changes the pressure inside the space S by discharging air from the space S or sending air into the space S.

  A space S for controlling pressure is formed by disposing the light transmitting member 3 via the frame 2 so as to face at least one (upper or lower) surface of the mask M. The deflection control unit 1 functions as a pressure control unit (also referred to as a first adjustment unit) that controls the pressure in the space S formed on at least one (upper or lower) side of the mask M. As will be described later, the pressure control unit controls the pressure in the space S based on the flatness of the mask M measured by the measuring device 60 so as to improve the flatness.

  In the present embodiment, the deflection control unit 1 is disposed above the mask M, but is not limited to this. The deflection control unit 1 can be disposed below the mask M. Further, the deflection control unit 1 may be disposed both above and below the mask M.

  The mask M held on the mask stage MST and the photosensitive substrate P held on the substrate stage PST are arranged in a conjugate positional relationship via the projection optical system PL. The exposure apparatus EX is configured as a so-called mirror scan type exposure apparatus having a large concave mirror. The photosensitive substrate P is obtained by applying a photosensitive agent (photoresist) to a glass plate (glass substrate).

  In this embodiment, the exposure apparatus EX is configured as a scanning exposure apparatus. The scanning exposure apparatus moves the mask M and the photosensitive substrate P in synchronization with the illumination optical system IL that emits the exposure light EL, and exposes the photosensitive substrate P through the pattern of the mask M.

  In the following description, the optical axis direction of the projection optical system PL is the Z-axis direction, the direction perpendicular to the Z-axis direction is the synchronous movement direction of the mask M and the photosensitive substrate P is the Y-axis direction (scanning direction), the Z-axis direction, and the Y-axis. The direction orthogonal to both axial directions is taken as the X-axis direction. Further, the directions around the X axis, the Y axis, and the Z axis are defined as a θX direction, a θY direction, and a θZ direction, respectively.

  Illumination optical system IL includes, for example, a light source including a high-pressure mercury lamp and the like, an elliptical mirror that collects a light beam emitted from the light source, and a condenser lens that expands the light beam collected by the elliptical mirror and converts it into a parallel light beam Is provided. Further, the illumination optical system IL is arranged at a position conjugate with the mask M in order to cut a portion of the parallel light flux from the condenser lens that is not used as the irradiation light to the mask M and limit the exposure irradiation area of a predetermined area. In some cases, a restriction slit plate may be provided. Further, there may be provided a mirror that reflects the light beam from the limiting slit plate and irradiates the mask M with the slit-shaped illumination light beam.

Examples of the exposure light EL generated by the illumination optical system IL include, but are not limited to, ultraviolet emission lines (g-line, h-line, i-line) emitted from a mercury lamp. In addition, for example, far ultraviolet light (DUV light) such as KrF excimer laser light (wavelength 248 nm), ArF excimer laser light (wavelength 193 nm), or vacuum ultraviolet light such as F ₂ laser light (wavelength 157 nm) ( VUV light) or the like can be used. The illumination optical system IL can be configured as a so-called Koehler illumination system.

    Mask stage MST is configured to scan and drive mask M with respect to illumination optical system IL. Mask stage MST has a long stroke in the Y-axis direction (scanning direction) and an appropriate stroke in the X-axis direction orthogonal to the scanning direction. In addition, the mask stage MST has a suction unit 40 (suction port) for holding the mask M.

    The suction unit 40 is connected to a vacuum device (not shown), and the mask M is vacuum-sucked and held by the suction unit 40. The mask stage drive unit MSTD drives the mask stage MST in the X axis direction and the Y axis direction. The mask stage driving unit MSTD can be controlled by the main control system.

  As shown in FIG. 1, movable mirrors 32 a and 32 b are provided at respective edges in the X-axis direction and the Y-axis direction on the mask stage MST in directions orthogonal to each other. A laser interferometer Mx1 is disposed so as to face the movable mirror 32a. A plurality of laser pedometers My1 and My2 are arranged so as to face the movable mirror 32b. In this embodiment, there are two laser interferometers arranged opposite to the movable mirror 32b. However, the present invention is not limited to this, and three or more laser interferometers may be arranged oppositely.

  The laser interferometers My1 and My2 irradiate the movable mirror 32b with laser light, and detect the distance between the laser interferometers My1 and My2 and the movable mirror 32b. The detection results of the laser interferometers My1 and My2 are output to the main control system. The main control system calculates the position of the mask stage MST in the Y-axis direction and the amount of rotation about the Z-axis based on the detection results of the laser interferometers My1 and My2.

  The laser interferometer Mx1 irradiates the movable mirror 32a with laser light, and detects the distance between the laser interferometer Mx1 and the movable mirror 32a. The detection result of the laser interferometer Mx1 is output to the main control system. The main control system obtains the position of the mask stage MST in the X-axis direction based on the detection result of the laser interferometer Mx1.

  The main control system monitors the position (posture) of the mask stage MST from the outputs of the laser interferometer Mx1 and the laser interferometers My1 and My2. The main control system sets the mask stage MST to a predetermined position (attitude) by controlling the mask stage driving unit MSTD while monitoring the position of the mask stage MST.

  The exposure light EL that has passed through the mask M enters the projection optical system PL. The projection optical system PL forms an image of a pattern existing in the illumination area of the mask M on the photosensitive substrate P. As shown in FIG. 2, the projection optical system PL can form an image of the pattern of the mask M on the photosensitive substrate P via the trapezoidal mirror 52, the convex mirror 53, and the concave mirror 54, for example. The projection area of the projection optical system PL on the photosensitive substrate P is set to a predetermined shape such as an arc shape.

  The substrate stage PST that holds the photosensitive substrate P includes a substrate holder that holds the photosensitive substrate P. Similar to mask stage MST, substrate stage PST has a scanning stroke in the Y-axis direction (scanning direction) and a stroke for step movement in the X-axis direction orthogonal to the scanning direction. Further, the substrate stage PST is configured to be movable in the Z-axis direction and the θX, θY, and θZ directions.

  The substrate stage drive unit PSTD drives the substrate stage PST in the X axis direction and the Y axis direction. The substrate stage drive unit PSTD is controlled by the main control system.

  As shown in FIG. 1, movable mirrors 33 a and 33 b are installed in the directions perpendicular to each other at the respective edges in the Y-axis direction and the X-axis direction on the substrate stage PST.

  A plurality of (for example, three) laser interferometers Pxl, Px2, and Px3 are arranged so as to face the movable mirror 33a extending in the X-axis direction. A plurality of (for example, two) laser interferometers Pyl and Py2 are arranged so as to face the movable mirror 33b extending in the Y-axis direction.

  The plurality of laser interferometers Pxl to Px3 are arranged at equal intervals along the Y-axis direction. The laser interferometers Pyl and Py2 irradiate the moving mirror 33b with laser light to detect the distance between the laser interferometers Py1 and Py2 and the moving mirror 33b. The detection results of the laser interferometers Pyl and Py2 are output to the main control system. The main control system obtains the position of the substrate stage PST in the Y-axis direction and the rotation amount around the Z-axis based on the detection results of the laser interferometers Pyl and Py2.

  The laser interferometers Pxl to Px3 irradiate the moving mirror 33a with laser light, and detect the distance between the laser interferometers Px1 to Px3 and the moving mirror 33a. Here, since the substrate stage PST has a long scanning stroke in the Y-axis direction, the laser interferometers Pxl to Px3 can be switched according to the position of the substrate stage PST.

  The detection results of the laser interferometers Pxl to Px3 are output to the main control system. The main control system obtains the position of the substrate stage PST in the X-axis force direction based on the detection results of the laser interferometers Pxl to Px3. The main control system monitors the position (posture) of the substrate stage PST from the outputs of the laser interferometers Pyl and Py2 and the laser interferometers Pxl to Px3. The main control system sets the substrate stage PST to a predetermined position (posture) by controlling the substrate stage drive unit PSTD while monitoring the position (posture) of the substrate stage PST.

  The mask stage drive unit MSTD and the substrate stage drive unit PSTD are driven by the mask stage drive unit MSTD and the substrate stage drive unit PSTD, respectively. The main control system controls the driving units PSTD and MSTD while monitoring the positions of the mask stage MST and the substrate stage PST, thereby moving the mask M and the photosensitive substrate P to an arbitrary scanning speed (synchronized with respect to the projection optical system PL). (Moving speed) and move synchronously in the Y-axis direction.

  In the present embodiment, the configuration of an exposure apparatus suitable for manufacturing a liquid crystal display device has been described. However, the present invention is not limited to this. The exposure apparatus in this embodiment can also be used for manufacturing other devices such as semiconductor chips and thin film magnetic heads.

Further, in the exposure apparatus of the present embodiment, the projection optical system PL may be any of an equal magnification system, a reduction system, or an enlargement system. When using far ultraviolet rays such as excimer laser, projection optical system PL is preferably made of a glass material that transmits far ultraviolet rays such as quartz or fluorite. In the case of using the F ₂ laser is preferably configured as an optical system of the catadioptric system or a refraction system.

  When a linear motor is used as a driving device for the substrate stage PST and the mask stage MST, for example, an air levitation type using an air bearing or a magnetic levitation type using a Lorentz force or a reactance force can be employed.

  The stage may be a type that moves along a guide, or may be a guideless type that is not provided with a guide. When a flat motor is used as the stage drive device, for example, either the magnet unit or the electric machine (coil) unit is arranged on the stage side, and the other of the magnet unit and the electric machine unit is arranged on the surface plate (base) side of the stage. do it.

  The reaction force generated by the movement of the substrate stage PST can be released mechanically to the floor (ground) using the frame member. Similarly to the substrate stage PST, the reaction force generated by the movement of the mask stage MST can be mechanically released to the floor (ground) using the frame member.

  FIG. 3 is an enlarged view of a part of the exposure apparatus shown in FIG. FIG. 3 shows a measuring device 60 that measures the deflection of the mask M and its periphery.

  The measuring device 60 is disposed, for example, above the mask M, and measures the position (height) in the Z-axis direction of the measurement location on the upper surface or the lower surface of the mask M. By moving the mask M with the mask stage MST or arranging a plurality of measuring devices 60, the position (height) in the Z-axis direction can be measured with respect to a plurality of measurement locations on the upper surface or the lower surface of the mask M. it can. The deflection control unit 1 disposed on the mask M includes a light transmission member 3 disposed to face the mask M. The measurement device 60 includes, for example, a laser displacement meter, and can perform measurement with measurement light transmitted through the light transmission member 3. The amount of deflection of the mask M can be obtained by a control unit (not shown) by measuring the plurality of measurement points on the upper surface or the lower surface of the mask M.

  In the present embodiment, the measuring device 60 is disposed above the mask, but is not limited thereto, and may be disposed below the mask M. In this case, the measuring device 60 measures the amount of deflection of the mask M from below the mask M.

  Further, the movement stroke of the mask stage MST in the X-axis direction is smaller than the movement stroke in the Y-axis direction (scanning direction). For this reason, in order to measure the deflection amount of the whole area | region of the mask M, it is preferable to provide the measuring device 60 with two (for example, three pieces) in the X-axis direction.

  The measurement result of the measuring device 60 is input to an arithmetic device (not shown). The arithmetic device corrects (changes) the displacement amount (deflection amount) of the mask M based on the flatness (measurement result) of the mask M measured by the measurement device 60. That is, the arithmetic unit calculates a pressure command value necessary for correction and outputs it to a pressure control source (not shown). The pressure control source discharges air from the space S through the pressure control pipe 30 or sets the inside of the space S so as to reach a predetermined pressure in the space S based on the pressure command value from the arithmetic unit. Send air to.

  Next, the configuration of the mask holding unit 4 in the present embodiment will be described with reference to FIGS.

  FIG. 4 is a sectional view of the periphery of the mask stage of the exposure apparatus in this embodiment. As shown in FIG. 4, the mask holding unit 4 is fixed to an adjustment unit 5 that adjusts the position of the mask holding unit in the Z-axis direction. The mask holding unit 4 has an appropriate stroke in the Z-axis direction, for example, by the adjusting unit 5. Therefore, the mask holding unit 4 can be moved relative to the mask stage MST in the Z direction. That is, the mask holding unit 4 is configured to be able to change the relative positional relationship with respect to the mask stage MST.

  As shown in FIG. 3, in this embodiment, the mask holding unit 4 includes two mask holding units 4xa and 4xb in the X-axis direction and four mask holding units 4ya, 4yb, and 4yc in the Y-axis direction. 4 yd.

  Each of the plurality of mask holding units 4 is provided with an adjusting unit 5. The plurality of mask holders 4 are configured to be independently movable. Therefore, each mask holding unit 4 can independently adjust the position of the mask M in the Z direction. Note that the plurality of mask holding units 4 are not limited to those configured to have the adjusting unit 5, but only a part of the mask holding units 4 (for example, the mask holding unit 4xa) adjusts. You may comprise so that the part 5 may be provided.

  For example, the adjustment unit 5 may be a spacer that determines and fixes the position of the mask holding unit 4 in the Z-axis direction. The adjustment unit 5 may include, for example, a linear guide and a pulse motor (actuator), and may control the position of the mask holding unit 4 in the Z-axis direction.

  Next, a method for transferring the pattern of the mask M to the photosensitive substrate P using the exposure apparatus in this embodiment will be described. Here, as shown in FIG. 4, it is assumed that the mask M is bent so as to protrude downward due to its own weight.

  When the mask M to which the deflection control unit 1 is attached is held on the mask stage MST and the photosensitive substrate P is held on the substrate stage PST, the main control system starts scanning exposure after the alignment processing.

  As shown in FIG. 4, for example, the upper surface of the mask M (near the center of the mask M) is on the −Z side (downward side) with respect to the ideal position Zr (a position where the best focus is obtained) represented by a broken line. Is bent. For this reason, in the present embodiment, the measurement device 60 measures the amount of deflection of the mask M, and the deflection control space S so that the deflection of the mask M is corrected based on the amount of deflection (the output of the measurement device 60). The pressure is controlled. The pressure in the deflection control space S is controlled (increase or decrease in pressure) by a pressure control device.

  In the present embodiment, as shown in FIG. 4, the pressure control device reduces the pressure in the deflection control space S so that the position of the upper surface of the mask M in the exposure apparatus EX matches the ideal position Zr. When the pressure in the deflection control space S decreases, the deflection amount near the center of the mask decreases, and the mask M is flattened over the entire surface. FIG. 5 shows a state (flattened state) in which the flatness of the mask M is improved.

  As shown in FIG. 5, even when the pressure of the deflection control space S is reduced and the mask M is flattened, the mask M is positioned at the position −Z in the Z-axis direction with respect to the ideal position Zr represented by the broken line. There may be deviation. The amount of deviation varies depending on the flatness (flatness) of the mask holding unit 4 of the mask stage MST, the accuracy of the projection optical system PL, and the like.

  For this reason, the mask holding unit 4 (adjustment unit 5) moves the mask based on the output of the measuring device 60 so that the upper surface of the mask M is positioned at the ideal position Zr represented by a broken line. By controlling in this way, the pattern formation surface of the mask M can be matched with an ideal position.

  As shown in FIG. 5, the mask M is disposed perpendicular to the Z-axis direction. However, even when the mask M is tilted around the X axis or the Y axis, the pattern forming surface of the mask M is adjusted with respect to the Z axis direction by adjusting the positions of the plurality of mask holding portions 4 in the Z axis direction. Can be adjusted to be vertical.

  If good flatness cannot be obtained for the mask M, the pattern forming surface of the mask M can be flattened by adjusting the pressure in the deflection control space S and the position of the mask holding unit 4 based on the measurement result of the measuring device 60. Can be made (flattened).

  By the way, the image plane may be curved (for example, convex upward or downward) in the X-axis direction (direction perpendicular to the scanning direction) by the projection optical system PL.

  When the pressure in the deflection control space S is changed, the pattern formation surface of the mask M changes in both the X-axis direction and the Y-axis direction. For this reason, control which makes the Y-axis direction flat and bends the X-axis direction cannot be performed.

  Therefore, each of the plurality of mask holding portions 4 is moved in the Z-axis direction so as to be arranged at a predetermined position, and the pressure in the deflection control space S is controlled to a predetermined value, so that the Y-axis direction is flattened. The axial direction can be bent. Here, the amount of deflection in the X-axis direction can be set based on the curvature of field of the projection optical system PL.

  As described above, the deflection control unit 1 of the present embodiment adjusts the flatness of the mask M in the scanning (Y-axis) direction of the mask stage MST, and the plurality of mask holding units 4 are different from the scanning direction of the mask stage MST. The displacement (deflection) of the mask M in the vertical (X-axis) direction can be adjusted. Therefore, it is possible to control the flattening (deflection) of the mask M in consideration of the imaging characteristics (field curvature, etc.) of the projection optical system PL.

  Hereinafter, this control method will be specifically described with reference to FIG. FIG. 6 is a schematic diagram showing the relationship between the mask holding unit 4 and the amount of deflection of the mask M in the exposure apparatus of the present embodiment. The flatness (deflection) of the mask M can be determined by the position of the mask holding unit 4 in the Z-axis direction and the pressure of the space S adjusted by the deflection control unit 1.

  FIG. 6A shows a state where the positions of the left and right mask holding portions 4 are different. As shown in FIG. 6A, the shape (deflection) of the periphery of the mask M is less influenced by the pressure in the space S, and the influence of the position of the mask holding unit 4 in the Z-axis direction is dominant. That is, the position of the peripheral portion of the mask M is displaced greatly depending on the position of the mask holding unit 4.

  On the other hand, as it approaches the center of the mask M, the mask M is bent by its own weight. For this reason, the influence of the pressure in the space S is dominant in the central portion of the mask M.

  As shown in FIG. 6A, when the deformation amount (local displacement amount) of the mask M is divided into a component that depends on the position of the mask holding unit 4 and a component that depends on its own weight, respectively, Is represented by the mask displacement Z4 due to and the mask displacement ZS due to its own weight.

  FIG. 6B shows a state in which the mask displacement Z4 is set to zero by moving the right mask holding portion 4 downward. FIG. 6C shows a state where the pressure in the space S is reduced.

  In order to flatten the mask M, as shown in FIG. 6B, the position of the mask holding unit 4 in the Z-axis direction is changed to reduce the mask displacement Z4. Here, the mask holding unit 4 can be controlled based on the measurement result by the measuring device 60 so that the flatness is improved (the Z coordinates of the plurality of mask holding units approach). Moreover, the position of the mask holding part 4 can also be changed manually.

  However, even when the position of the mask holding unit 4 is changed, the mask displacement ZS (deflection component) due to its own weight remains in the mask M. Due to this deflection component, the mask M does not become flat.

  Next, as shown in FIG. 6C, when the pressure in the space S is lowered, the mask M receives a relatively large pressure from the lower surface of the mask M, so that the mask displacement ZS decreases. As represented by the solid line in FIG. 6C, the mask M is flattened by controlling the pressure in the space S to a predetermined value.

  Thus, by appropriately controlling the position of the mask holding unit 4 in the Y-axis direction and the pressure in the space S, the mask displacement Z4 and ZS can be reduced to make the mask M flat (flat). Note that the series of controls includes, for example, the adjustment unit 5 (second adjustment unit) including an actuator and the first adjustment unit (pressure control unit) described above as the measurement result of the measurement unit (measurement device 60). What is necessary is just to perform using the common control part controlled based on.

  Next, the case where the exposure apparatus in this embodiment supports various mask sizes will be described. FIG. 7 is a schematic block diagram when the exposure apparatus EX of the present embodiment corresponds to various mask sizes.

  When the mask M having a small size in the Y-axis direction is held on the mask stage, the size of the mask holding unit 4 and the size of the mask M may not match. At this time, the reinforcing beam 6 provided in the support mechanism 7 and the deflection control unit 1 is required.

The support mechanism 7 is provided, for example, in the mask holding unit 4 and includes a plurality of other mask holding units and a plurality of adjusting units for independently adjusting the positions in the Z-axis direction. Therefore, the above-described mask displacement Z4 can be adjusted even for a small mask, as in the state where the sizes of the mask holding unit 4 and the mask M are matched.

In this embodiment, the position of the mask holding part 4 in the Z-axis direction is adjusted. However, an external force that compresses the peripheral part of the mask M in the Z-axis direction is applied to displace the pattern forming surface of the mask M (described above). (Corresponding to the mask displacement Z4) may be adjusted.
[Embodiment of Device Manufacturing] Next, a device manufacturing method (semiconductor device, liquid crystal display device, etc.) according to an embodiment of the present invention will be exemplified.

  A semiconductor device is manufactured through a pre-process for producing an integrated circuit on a wafer (semiconductor substrate) and a post-process for completing an integrated circuit chip on the wafer produced in the pre-process as a product. The pre-process can include a step of exposing the wafer coated with the photosensitive agent using the above-described exposure apparatus, and a step of developing the wafer. The post-process can include an assembly process (dicing, bonding) and a packaging process (encapsulation). Moreover, a liquid crystal display device is manufactured by passing through the process of forming a transparent electrode. The step of forming a transparent electrode includes a step of applying a photosensitive agent to a glass substrate on which a transparent conductive film is deposited, a step of exposing the glass substrate on which the photosensitive agent is applied using the above-described exposure apparatus, and a glass Developing the substrate.

  The device manufacturing method of the present embodiment is more advantageous than the conventional one in at least one of device productivity and quality.

    According to the present embodiment, it is possible to provide an exposure apparatus capable of adjusting the deflection of the original plate with high accuracy and a device manufacturing method using the exposure apparatus. Therefore, according to the present embodiment, for example, the pattern surface of the mask can be flattened globally. Alternatively, the deflection of the mask can be adjusted according to the curvature of field of the projection optical system.

    The embodiment of the present invention has been specifically described above. However, the present invention is not limited to the matters described as the above-described embodiments, and can be appropriately changed without departing from the technical idea of the present invention.

It is a perspective view which shows schematic structure of the exposure apparatus in a present Example. It is a side view which shows schematic structure of the exposure apparatus in a present Example. It is a one part enlarged view of the exposure apparatus in a present Example. It is sectional drawing of the mask stage periphery part of the exposure apparatus in a present Example. It is sectional drawing of the mask stage periphery part of the exposure apparatus in a present Example, and has shown the state by which the bending of the mask was correct | amended. In the exposure apparatus in a present Example, it is the schematic which shows the relationship between the mask holding | maintenance part 4 and the deflection amount of the mask M. It is a schematic block diagram in case the exposure apparatus in a present Example respond | corresponds to various mask sizes.

Explanation of symbols

1: Deflection control unit 2: Frame 3: Light transmission member 4: Mask holding unit 5: Mask holding movable unit 6: Reinforcement beam 7: Support mechanism EX: Exposure apparatus IL: Illumination system M: Mask MST: Mask stage PL: Projection Optical system PST: Substrate stage S: Space

Claims (6)

An exposure apparatus that has a projection optical system and that exposes a substrate through an original pattern and the projection optical system,
An original stage that moves while holding the original;
A measurement unit that measures a position in the direction of the optical axis of the projection optical system with respect to a measurement position of the original plate held on the original stage;
A first adjustment unit for adjusting the pressure of the space in contact with the upper surface or the lower surface of the original plate;
A plurality of holding units provided on the original stage to hold the original; and
A second adjustment unit that adjusts the position of each of the plurality of holding units in the direction of the optical axis;
A control unit for controlling the first adjustment unit and the second adjustment unit based on the plurality of positions measured by the measurement unit with respect to a plurality of measurement points of the original plate;
I have a,
The plurality of holding portions are provided along a first axis that is provided along a first axis that is orthogonal to the optical axis, and a second axis that is orthogonal to both the optical axis and the first axis. A plurality of second holding portions each provided,
The plurality of first holding portions and the plurality of second holding portions are configured to be independently movable,
The first adjustment unit adjusts the amount of deflection of the original by adjusting the pressure of the space,
The second adjustment unit adjusts the position of the original in the direction of the optical axis by adjusting the positions of the plurality of first holding units and the plurality of second holding units, respectively. Exposure equipment to do. The exposure apparatus according to claim 1, wherein the second adjustment unit adjusts an inclination of the original plate around the first axis or the second axis. The first adjustment unit includes a light transmission member as a partition of the space,
The measuring unit, the light transmitting member to measure the position by measuring light transmitted through the, that exposure apparatus according to claim 1 or 2 wherein. A substrate stage that holds and moves the substrate;
The exposure of the substrate is performed by moving the original stage and the substrate stage in the direction of the second axis ,
The control unit is configured so that the original is bent according to the curvature of field of the projection optical system with respect to the direction of the first axis, and the original is flat with respect to the direction of the second axis . Controlling the adjustment unit and the second adjustment unit,
The exposure apparatus according to any one of claims 1 to 3, wherein An exposure apparatus that has a projection optical system and that exposes a substrate through an original pattern and the projection optical system,
An original stage that moves while holding the original;
A measurement unit that measures a position in the direction of the optical axis of the projection optical system with respect to a measurement position of the original plate held on the original stage;
A first adjustment unit for adjusting the pressure of the space in contact with the upper surface or the lower surface of the original plate;
A control unit that controls the first adjustment unit based on the plurality of positions measured by the measurement unit with respect to a plurality of measurement points of the original;
A plurality of holding units provided on the original stage to hold the original; and
A second adjustment unit that adjusts the position of each of the plurality of holding units in the direction of the optical axis;
I have a,
The plurality of holding portions are provided along a first axis orthogonal to the optical axis and a second axis orthogonal to both the optical axis and the first axis. A plurality of second holding portions each provided,
The plurality of first holding units and the plurality of second holding units are configured to be independently movable,
The first adjustment unit adjusts the amount of deflection of the original by adjusting the pressure of the space,
The second adjustment unit adjusts the position of the original in the direction of the optical axis by adjusting the positions of the plurality of first holding units and the plurality of second holding units, respectively. Exposure equipment to do. A step of exposing a substrate using the exposure apparatus according to claim 1;
Developing the substrate exposed in the step;
A device manufacturing method comprising: