JPH06275489A - Mask supporting device - Google Patents

Mask supporting device

Info

Publication number
JPH06275489A
JPH06275489A JP8512593A JP8512593A JPH06275489A JP H06275489 A JPH06275489 A JP H06275489A JP 8512593 A JP8512593 A JP 8512593A JP 8512593 A JP8512593 A JP 8512593A JP H06275489 A JPH06275489 A JP H06275489A
Authority
JP
Japan
Prior art keywords
mask
control chamber
fluid
temperature
pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8512593A
Other languages
Japanese (ja)
Inventor
Naoki Uchida
直樹 内田
Yukio Ishiba
幸生 石葉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Topcon Corp
Original Assignee
Topcon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Topcon Corp filed Critical Topcon Corp
Priority to JP8512593A priority Critical patent/JPH06275489A/en
Publication of JPH06275489A publication Critical patent/JPH06275489A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature

Landscapes

  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To provide a mask supporting device wherein mask's deflection deformation and thermal deformation are suppressed to minimum, for higher pattern transfer precision. CONSTITUTION:Relating to a mask supporting device which is applied to an exposure device and supports a mask, a control chamber 15 is provided on one side of a mask 14, a fluid supply device 18 that supplies with the fluid, controlled in temperature based on mask's temperature, is provided in the control chamber, a discharge device 21 for discharging the fluid in the control chamber is provided, and a pressure control device 24 that detects pressure in the control chamber for controlling supply/discharge of the fluid is provided.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】この発明は、露光装置に適用しマ
スクを支持するためのマスク支持装置に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mask supporting device applied to an exposure apparatus to support a mask.

【０００２】[0002]

【従来の技術】液晶表示装置の製造工程では、基板にパ
ターンを露光する手段の１つとして、プロキシミティー
露光装置が用いられる。近年液晶表示装置の大型化が進
んでいるが、大型の液晶表示装置を製造するためには、
プロキシミティー露光装置で使用するマスクも大型化す
る必要がある。2. Description of the Related Art In a manufacturing process of a liquid crystal display device, a proximity exposure device is used as one of means for exposing a pattern on a substrate. In recent years, liquid crystal display devices have become larger, but in order to manufacture large liquid crystal display devices,
It is also necessary to increase the size of the mask used in the proximity exposure apparatus.

【０００３】さて、マスクはその周辺部をマスクステー
ジで支持する構成になっている。このため、大型のマス
クを用いる場合には、自重によってマスクがたわんでパ
ターンの転写精度が悪化する傾向がある。この問題を解
決するため、本出願人はたわみ補正機構付きマスク支持
装置（特開平４−１１０８５５号公報参照）を提案し
た。この装置は、マスク上方に密封空隙を構成し、この
空隙内の圧力をコントロールすることによりマスクの自
重たわみを補正する構成になっている。Now, the mask is constructed so that its peripheral portion is supported by a mask stage. For this reason, when a large mask is used, the mask tends to bend due to its own weight and the pattern transfer accuracy tends to deteriorate. In order to solve this problem, the present applicant has proposed a mask support device with a deflection correction mechanism (see Japanese Patent Laid-Open No. 4-110855). This device has a structure in which a hermetically sealed void is formed above the mask, and the deflection of the mask due to its own weight is corrected by controlling the pressure in this void.

【０００４】[0004]

【発明が解決しようとする課題】プロキシミティー露光
においては、マスクと露光部材との間隔を小さくするこ
とによって解像度を向上させることができ、また、この
間隔をマスク全面にわたって均一に保つことによって線
幅ムラのない良好なパターンを形成することが可能であ
る。この意味で前述のマスク支持装置は大きな効果を有
する。In the proximity exposure, the resolution can be improved by reducing the distance between the mask and the exposure member, and the line width can be improved by keeping this distance uniform over the entire surface of the mask. It is possible to form a good pattern without unevenness. In this sense, the mask supporting device described above has a great effect.

【０００５】しかしながら、プロキシミティー露光にお
いてマスクが大型の場合には、マスクの熱変形も無視で
きなくなり、転写精度が悪化する懸念がある。すなわ
ち、パターン転写のために上方から照射される露光光に
よってマスクが加熱されて変形し、転写精度が悪化する
のである。However, when the mask is large in the proximity exposure, thermal deformation of the mask cannot be ignored, and there is a concern that the transfer accuracy may be deteriorated. That is, the mask is heated and deformed by the exposure light emitted from above for the pattern transfer, and the transfer accuracy deteriorates.

【０００６】本発明は、前述したような従来技術の問題
点を解消し、マスクのたわみ変形及び熱変形を最小限に
抑え、パターンの転写精度を格段に向上することが可能
なマスク支持装置を提供することを目的としている。The present invention solves the problems of the prior art as described above, suppresses the flexural deformation and thermal deformation of the mask to a minimum, and provides a mask supporting device capable of significantly improving the pattern transfer accuracy. It is intended to be provided.

【０００７】[0007]

【課題を解決するための手段】この発明は、露光装置に
適用しマスクを支持するためのマスク支持装置におい
て、マスク１４の一方側に制御室１５を設け、制御室内
にマスクの温度をもとに温度制御された流体を供給する
ための流体供給装置１８を設け、制御室内の流体を排出
するための排出装置２１を設け、制御室内の圧力を検知
して流体の供給と排出をコントロールする構成の圧力コ
ントロール装置２４を設けたことを特徴とするマスク支
持装置を要旨としている。The present invention is applied to an exposure apparatus for supporting a mask, and in the mask supporting apparatus, a control chamber 15 is provided on one side of the mask 14, and the temperature of the mask is controlled in the control chamber. A configuration is provided in which a fluid supply device 18 for supplying a temperature-controlled fluid is provided, an exhaust device 21 for exhausting the fluid in the control chamber is provided, and the supply and the exhaust of the fluid are controlled by detecting the pressure in the control chamber. The gist of the mask support device is that the pressure control device 24 is provided.

【０００８】[0008]

【実施例】以下、図面を参照して本発明の実施例を説明
する。図１は本発明によるマスク支持装置の実施例を示
す概念図である。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a conceptual diagram showing an embodiment of a mask supporting device according to the present invention.

【０００９】マスク支持装置１０は基板ステージ１１を
有し、その上には被露光部材１２が載置されている。被
露光部材１２は例えば基板である。The mask supporting device 10 has a substrate stage 11 on which an exposed member 12 is placed. The exposed member 12 is, for example, a substrate.

【００１０】基板ステージ１１の上方にはマスクステー
ジ１３が設けられている。マスクステージ１３にはマス
ク１４が支持されている。マスク１４は周辺部のみが支
持されている。A mask stage 13 is provided above the substrate stage 11. A mask 14 is supported on the mask stage 13. Only the peripheral portion of the mask 14 is supported.

【００１１】マスク１４の上方には密閉された制御室１
５が形成されている。制御室１５は下方がマスク１４の
上面で画成され、上方と側方は透明板１６と枠体１７に
よって画成されている。透明板１６と枠体１７は例えば
透明なガラスで形成されている。A control room 1 is sealed above the mask 14.
5 is formed. The lower part of the control chamber 15 is defined by the upper surface of the mask 14, and the upper and side parts thereof are defined by the transparent plate 16 and the frame body 17. The transparent plate 16 and the frame 17 are made of, for example, transparent glass.

【００１２】マスク支持装置１０には、たわみ・温度調
整手段３０が設けられている。たわみ・温度調整手段３
０は、制御室内に温度を制御した流体を供給し、かつ、
制御室内の圧力を制御する構成になっている。以下、た
わみ・温度調整手段３０について詳細に述べる。The mask supporting device 10 is provided with a deflection / temperature adjusting means 30. Deflection / temperature adjusting means 3
0 supplies a fluid whose temperature is controlled into the control chamber, and
It is configured to control the pressure in the control chamber. The deflection / temperature adjusting means 30 will be described in detail below.

【００１３】たわみ・温度調整手段３０は、流体供給装
置１８、真空発生装置２１及び圧力コントロール装置２
４を有している。The deflection / temperature adjusting means 30 comprises a fluid supply device 18, a vacuum generating device 21 and a pressure control device 2.
Have four.

【００１４】流体供給装置１８は、温度制御した恒温の
流体を供給する装置で、Ｎ2 ，Ａｒ2 ，Ｈ2 Ｏ等の流体
源と温度調整部を備えている。ここで恒温とは、予め定
めた所定の温度でも良いし、あるいは露光光により上昇
したマスクの温度を冷却するのに必要な温度に合わせて
設定することもできる。恒温流体供給装置１８は配管１
９によって制御室１５内に接続されている。配管１９の
途中には流量調整弁２０が配置されている。流体供給装
置はマスクの温度を検知する温度センサー２６でフィー
ドバック制御可能である。The fluid supply device 18 is a device for supplying a constant temperature fluid whose temperature is controlled, and is provided with a fluid source such as N 2 , Ar 2 and H 2 O and a temperature adjusting section. Here, the constant temperature may be a predetermined temperature, or may be set in accordance with the temperature required to cool the temperature of the mask raised by the exposure light. The constant temperature fluid supply device 18 is a pipe 1
It is connected to the inside of the control room 15 by 9. A flow rate adjusting valve 20 is arranged in the middle of the pipe 19. The fluid supply device can be feedback-controlled by a temperature sensor 26 that detects the temperature of the mask.

【００１５】真空発生装置２１は、制御室１５内の排気
を行うための装置で、配管２２によって制御室１５に接
続されている。配管２２の途中にはコントロールバルブ
２３が配置されている。The vacuum generator 21 is a device for exhausting the inside of the control chamber 15, and is connected to the control chamber 15 by a pipe 22. A control valve 23 is arranged in the middle of the pipe 22.

【００１６】圧力コントロール装置２４は、制御室１５
内の圧力を検知し、流量調整弁１９とコントロールバル
ブ２３を制御するための装置で、配管２５を介して制御
室１５に接続されている。圧力コントロール装置２４に
よって弁１９とバルブ２３を制御することによって、制
御室１５内の圧力を所望の値に維持することが可能であ
る。The pressure control device 24 includes a control chamber 15
A device for detecting the internal pressure and controlling the flow rate adjusting valve 19 and the control valve 23, which is connected to the control chamber 15 via a pipe 25. By controlling the valves 19 and 23 with the pressure control device 24, it is possible to maintain the pressure in the control chamber 15 at a desired value.

【００１７】次に、マスク支持装置１０の動作を説明す
る。Next, the operation of the mask support device 10 will be described.

【００１８】準備段階 準備段階ではいわゆる校正作業を行う。すなわち、所定
のマスクをマスクステージに設置した場合に、マスクの
たわみを０にする制御室内圧力（負圧）を予め測定し
て、圧力コントロール装置２４にインプットしておくの
である。マスクのたわみは電気マイクロメータ等を用い
て測定してもよいし、光学的に測定してもよい。 Preparation Stage In the preparation stage, so-called calibration work is performed. That is, when a predetermined mask is installed on the mask stage, the pressure (negative pressure) in the control chamber that reduces the deflection of the mask to 0 is measured in advance and input to the pressure control device 24. The deflection of the mask may be measured using an electric micrometer or the like, or may be measured optically.

【００１９】露光段階 制御室圧力を測定しながら制御しつつ、露光Ｌを照射す
ることによって露光作業を行う。The exposure operation is performed by irradiating the exposure L while controlling the exposure stage control chamber while measuring and controlling the pressure.

【００２０】制御室内温度及びマスク温度をモニターし
ながら露光を行い、マスクの温度が、規定の温度以上に
上昇した場合には、流体の温度を制御し、マスクの冷却
を行う。ただし、恒温流体を多量に流すとマスクが振動
する場合もあるので、この動作は特に露光作業のあいま
に行うと有利である。Exposure is performed while monitoring the temperature in the control chamber and the mask temperature. When the temperature of the mask rises above a specified temperature, the temperature of the fluid is controlled to cool the mask. However, if a large amount of constant temperature fluid is flown, the mask may vibrate, and this operation is particularly advantageous during the exposure operation.

【００２１】[0021]

【発明の効果】本発明のマスク支持装置は、マスク１４
の一方側に制御室１５を設け、制御室内にマスクの温度
をもとに温度制御された流体を供給するための流体供給
装置１８を設け、制御室内の流体を排出するための排出
装置２１を設け、制御室内の圧力を検知して流体の供給
と排出をコントロールするための圧力コントロール装置
２４を設けたことを特徴とするので、制御室内に温度制
御した流体を供給しかつ制御室内の圧力をコントロール
することによって、マスクの自重によるたわみ変形並び
に露光光の照射で生じる熱変形を最小限に抑えることが
でき、従って、転写精度を比躍的に高めることができ
る。According to the mask supporting apparatus of the present invention, the mask 14
A control chamber 15 is provided on one side, a fluid supply device 18 for supplying a fluid whose temperature is controlled based on the temperature of the mask is provided in the control chamber, and a discharge device 21 for discharging the fluid in the control chamber is provided. Since the pressure control device 24 is provided to detect the pressure in the control chamber and control the supply and discharge of the fluid, the temperature-controlled fluid is supplied to the control chamber and the pressure in the control chamber is controlled. By controlling, it is possible to minimize the flexural deformation due to the weight of the mask and the thermal deformation caused by the irradiation of the exposure light, and therefore, the transfer accuracy can be dramatically improved.

【００２２】なお、本発明は前述の実施例に限定されな
い。例えば、ステッパー及びミラープロジェクション方
式の露光装置のマスク支持方式にも同様な目的に利用可
能である。The present invention is not limited to the above embodiment. For example, it can be used for the same purpose in a mask supporting system of an exposure apparatus of a stepper and a mirror projection system.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明によるマスク支持装置の実施例を示す概
念図。FIG. 1 is a conceptual diagram showing an embodiment of a mask supporting device according to the present invention.

【符号の説明】[Explanation of symbols]

１０ マスク支持装置 １１ 基板ステージ １２ 被露光部材 １３ マスクステージ １４ マスク １５ 制御室 １６ 透明板 １７ 枠体 １８ 流体供給装置 １９，２２，２５ 配管 ２０ 流量調整弁 ２１ 真空発生器 ２３ コントロールバルブ ２４ 圧力コントロール装置 ２６ 温度センサー 10 Mask Support Device 11 Substrate Stage 12 Exposed Member 13 Mask Stage 14 Mask 15 Control Room 16 Transparent Plate 17 Frame 18 Fluid Supply Device 19, 22, 25 Piping 20 Flow Control Valve 21 Vacuum Generator 23 Control Valve 24 Pressure Control Device 26 Temperature sensor

Claims (1)

【特許請求の範囲】[Claims] 【請求項１】 露光装置に適用しマスクを支持するため
のマスク支持装置において、マスク（１４）の一方側に
制御室（１５）を設け、制御室内にマスクの温度をもと
に温度制御された流体を供給するための流体供給装置
（１８）を設け、制御室内の流体を排出するための排出
装置（２１）を設け、制御室内の圧力を検知して流体の
供給と排出をコントロールする構成の圧力コントロール
装置（２４）を設けたことを特徴とするマスク支持装
置。1. A mask supporting device applied to an exposure apparatus for supporting a mask, wherein a control chamber (15) is provided on one side of the mask (14), and the temperature is controlled based on the temperature of the mask in the control chamber. And a discharge device (21) for discharging the fluid in the control chamber, and detecting the pressure in the control chamber to control the supply and discharge of the fluid. A mask support device, characterized in that a pressure control device (24) is provided.
JP8512593A 1993-03-22 1993-03-22 Mask supporting device Pending JPH06275489A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8512593A JPH06275489A (en) 1993-03-22 1993-03-22 Mask supporting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8512593A JPH06275489A (en) 1993-03-22 1993-03-22 Mask supporting device

Publications (1)

Publication Number Publication Date
JPH06275489A true JPH06275489A (en) 1994-09-30

Family

ID=13849927

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8512593A Pending JPH06275489A (en) 1993-03-22 1993-03-22 Mask supporting device

Country Status (1)

Country Link
JP (1) JPH06275489A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4862432A (en) * 1986-04-22 1989-08-29 Shiojiri Kogyo Kabushiki Kaisha Securing construction for timepiece
JP2001326154A (en) * 2000-05-12 2001-11-22 Nikon Corp Projection aligner, microdevice, and manufacturing method therefor
EP1207425A2 (en) * 2000-11-15 2002-05-22 Canon Kabushiki Kaisha Exposure apparatus and maintenance method
JP2010129567A (en) * 2008-11-25 2010-06-10 Canon Inc Photolithography device, and device manufacturing method
KR101015841B1 (en) * 2008-03-13 2011-02-23 삼성모바일디스플레이주식회사 Mask frame assembly
JP2013054343A (en) * 2011-08-10 2013-03-21 Nsk Technology Co Ltd Proximity exposure device and proximity exposure method

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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