JP5246662B2 - Package for semiconductor device and method for manufacturing the same - Google Patents

Package for semiconductor device and method for manufacturing the same Download PDF

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JP5246662B2
JP5246662B2 JP2009030567A JP2009030567A JP5246662B2 JP 5246662 B2 JP5246662 B2 JP 5246662B2 JP 2009030567 A JP2009030567 A JP 2009030567A JP 2009030567 A JP2009030567 A JP 2009030567A JP 5246662 B2 JP5246662 B2 JP 5246662B2
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resin
hole
semiconductor device
lead
molded body
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JP2010186896A (en
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朝子 上安
綱一 田原
善之 杉田
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

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Description

本発明は、半導体素子搭載領域を備え、樹脂成型された半導体装置用パッケージおよびその製造方法に関する。   The present invention relates to a semiconductor device package that includes a semiconductor element mounting region and is resin-molded, and a method for manufacturing the same.

一般に、半導体装置用パッケージ等の樹脂射出成形において、特に小型形状のものを樹脂射出成形する際には、成形後に金型プレートを開く際に、スプルー、ランナーと樹脂成形体とを該プレート間で自動的に分離させることが行われており、その方法として、ピンポイントゲート方式が採用されている。   Generally, in resin injection molding of semiconductor device packages and the like, especially when a small-sized one is resin injection molded, when opening the mold plate after molding, the sprue, runner and resin molded body are placed between the plates. The separation is performed automatically, and the pinpoint gate method is adopted as the method.

この方式では、分離の際に、樹脂成形体側にゲート残りが発生する事を想定し、樹脂成形体のゲート部にゲート逃がしと称される凹部の底面に設け、ゲート残りがこのゲート逃がしの深さ範囲に収まり、樹脂成形体の外形の表面からはみ出す事を防止する形態が取られている。   In this method, it is assumed that there is a gate residue on the resin molded product side during separation, and the gate portion of the resin molded product is provided on the bottom of a recess called a gate escape, and the gate residue is the depth of this gate escape. The form which is settled in the range and prevents it from protruding from the surface of the outer shape of the resin molded body is taken.

以下、図4を用いて、上述のゲート逃がしを採用する半導体装置用パッケージの製造方法を説明する。
図4は従来の半導体装置用パッケージの製造方法を説明する図であり、図4(a)は成型金型にてリードをインサート成形する方法を示す断面で、図4(b)は完成した半導体装置用パッケージを示す断面である。なお、この説明における半導体装置用パッケージ100は、リードフレームに半導体素子搭載部となる収容部104cを設けた樹脂成形体104が形成される構造である。
Hereinafter, a method for manufacturing a package for a semiconductor device employing the above-described gate relief will be described with reference to FIG.
4A and 4B are diagrams for explaining a conventional method for manufacturing a package for a semiconductor device. FIG. 4A is a cross-sectional view showing a method of insert molding a lead with a molding die, and FIG. 4B is a completed semiconductor. It is a cross section which shows the package for apparatuses. The semiconductor device package 100 in this description has a structure in which a resin molded body 104 is formed in which a lead frame is provided with a housing portion 104c serving as a semiconductor element mounting portion.

図4において、100は光半導体装置用パッケージ、103はリード、103aは接続用電極、103bはアウターリード、104は樹脂成形体、104aはゲート残り、104bはゲート逃がし、104cは収容部、110は成型金型、110aは下型、110bは上型、111はスプルーを各々示している。   In FIG. 4, 100 is a package for an optical semiconductor device, 103 is a lead, 103a is a connection electrode, 103b is an outer lead, 104 is a resin molding, 104a is a remaining gate, 104b is a gate escape, 104c is an accommodating portion, 110 is A molding die, 110a is a lower die, 110b is an upper die, and 111 is a sprue.

樹脂成形の際には、成型金型110である下型110aと上型110bとでリード103を挟持し、成型金型110内部に形成される樹脂成形体104の成形領域となる空隙に熔融した成形樹脂を注入して樹脂成形体104がリード103と一体に成形される。   At the time of resin molding, the lead 103 is sandwiched between the lower mold 110a and the upper mold 110b, which are the molding dies 110, and melted in a gap that becomes a molding region of the resin molded body 104 formed inside the molding dies 110. The resin molding 104 is molded integrally with the lead 103 by injecting molding resin.

樹脂成形体104には半導体素子の搭載領域となる有底凹形状の収容部104cが形成され、リード103は収容部104cの底面から樹脂成形体104の外側へ延出する形状となる。   The resin molded body 104 is formed with a bottomed concave accommodating portion 104c that serves as a semiconductor element mounting region, and the lead 103 has a shape extending from the bottom surface of the accommodating portion 104c to the outside of the resin molded body 104.

樹脂成形体104の、収容部104cを有する側と表裏反対側の面から熔融した成形樹脂が注入され、上金型110bにスプルー111と成る樹脂導入路が前記空隙と連通して設けられる。該スプルー111は樹脂成形体104の方向へ先細りしながら空隙に達してピンポイントゲートを成している。   Melted molding resin is injected from the surface of the resin molded body 104 opposite to the side having the accommodating portion 104c and the front and back sides, and a resin introduction path serving as a sprue 111 is provided in the upper mold 110b in communication with the gap. The sprue 111 tapers in the direction of the resin molded body 104 and reaches the air gap to form a pinpoint gate.

樹脂成形体104において、前記ピンポイントゲートの端部には、凹形状のゲート逃がし104bが形成されている(図4(a))。
樹脂注入後、成形樹脂が固化した後に、下型110aと上型110bとを型開きすると、樹脂成形体104の形状により、該樹脂成形体104は下型110aに対する接触面積が上型110bに対する接触面積よりも大きいので、樹脂成形体104およびリード103は下型110aと離れずに上型110bが離れることと成る。この際に、上型110bと共にスプルー111がピンポイントゲートにて切断され、樹脂成形体104側にはゲート逃がし104bの底面にゲート残り104aとして痕跡が残る。
In the resin molded body 104, a concave gate relief 104b is formed at the end of the pinpoint gate (FIG. 4A).
When the lower mold 110a and the upper mold 110b are opened after the molding resin is solidified after resin injection, the resin molded body 104 has a contact area with the lower mold 110b depending on the shape of the resin molded body 104. Since it is larger than the area, the resin mold 104 and the lead 103 are not separated from the lower mold 110a, but the upper mold 110b is separated. At this time, the sprue 111 is cut with the pin point gate together with the upper mold 110b, and a trace remains as the gate remaining 104a on the bottom surface of the gate relief 104b on the resin molded body 104 side.

しかる後に、下型110aから、一体に形成された樹脂成形体104およびリード103を取り出し、必要に応じて樹脂成形体104の外側に延出したリード103を曲げ加工して半導体装置用パッケージ100を形成する。   Thereafter, the integrally formed resin molded body 104 and the lead 103 are taken out from the lower mold 110a, and the lead 103 extending to the outside of the resin molded body 104 is bent as necessary to form the semiconductor device package 100. Form.

即ち、従来の半導体装置用パッケージ100は、半導体素子を収容する為の収容部104cを有する箱形の樹脂成形体104が包含する形で、収容部104cの底面に露出する接続用電極103aと、樹脂成形体104の外側へ延出するアウターリード103bとから成るリード103を有し、樹脂成形体104の収容部104cが形成される側と表裏反対側の面にゲート逃がし104bが形成され、該ゲート逃がし104bの底面にゲート残り104aが残る(図4(b))。   That is, the conventional package 100 for a semiconductor device includes a connection electrode 103a exposed on the bottom surface of the housing portion 104c in a form encompassed by a box-shaped resin molded body 104 having a housing portion 104c for housing a semiconductor element; A lead 103 comprising an outer lead 103b extending to the outside of the resin molded body 104, and a gate relief 104b is formed on the surface of the resin molded body 104 on the side opposite to the side where the housing portion 104c is formed, The remaining gate 104a remains on the bottom surface of the gate relief 104b (FIG. 4B).

このようにゲート逃がし104bを形成することにより、ピンポイントゲート方式によってスプルー111先端部に残るゲート残り104aがゲート逃がし104b内に収まることにより、パッケージの外寸から突出することを防止していた(例えば、特許文献1参照)。
特開2003−25379号公報
By forming the gate relief 104b in this way, the remaining gate 104a remaining at the tip of the sprue 111 by the pinpoint gate method is prevented from protruding from the outer dimension of the package by being accommodated in the gate relief 104b ( For example, see Patent Document 1).
JP 2003-25379 A

ところで、近年は、光半導体素子を用いた光半導体装置の進歩が目覚しく、特にディスプレイのバックライトとしての使用拡大が予測されており、ディスプレイの薄型化を目的として光半導体装置に対しても低背化が求められている。   By the way, in recent years, the progress of optical semiconductor devices using optical semiconductor elements has been remarkable, and in particular, the use of the optical semiconductor device as a backlight of a display is expected to be increased. Is required.

しかしながら、前記従来の構成では、樹脂成形体104の収容部104cと表裏反対側の面にゲート残り104aを収める凹形状のゲート逃がし104bを設ける必要があり、リード103下部に設ける樹脂の厚みを確保するために、低背化が阻害される要因と成るという課題を有していた。   However, in the conventional configuration, it is necessary to provide the concave gate relief 104b that accommodates the remaining gate 104a on the surface opposite to the front and back sides of the housing portion 104c of the resin molded body 104, and ensures the thickness of the resin provided below the lead 103. In order to do so, there was a problem that a reduction in height would be a factor.

本発明の半導体装置用パッケージおよびその製造方法は、前記従来の課題を解決するもので、外形寸法を拡大することなく、低背化及び小型化を実現することを目的とする。   The package for a semiconductor device and the method for manufacturing the same according to the present invention are intended to solve the above-described conventional problems, and to achieve a reduction in height and size without increasing the external dimensions.

上記目的を達成するために、本発明の半導体装置用パッケージの製造方法は、樹脂成形体形成予定部にかかって形成される1または複数の第一の孔と、アウターリードに形成される1または複数の第二の孔とを備えたリードフレームを用い、前記リードフレームを成形金型で挟持した状態で前記成形金型内部に形成される空隙に成形樹脂を注入して前記リードフレームと前記成形樹脂とを一体に形成するインサート成形の際に、前記第二の孔から前記第一の孔に渡るサイドゲートを備えるスプルーを前記第二の孔に接続し、前記スプルーから前記第二の孔を介して前記成形金型のパーティングラインの、前記リードフレームのアウターリードが挟持される部分から前記空隙へ前記成形樹脂を注入することを特徴とする。 In order to achieve the above object, a method for manufacturing a package for a semiconductor device according to the present invention includes one or more first holes formed on a resin molded body formation scheduled portion and one or more formed on an outer lead. A lead frame having a plurality of second holes is used, and the lead frame and the molding are formed by injecting molding resin into a gap formed inside the molding die in a state where the lead frame is sandwiched between the molding dies. At the time of insert molding integrally forming resin, a sprue having a side gate extending from the second hole to the first hole is connected to the second hole, and the second hole is connected to the second hole from the sprue. The molding resin is injected into the gap from a part of the parting line of the molding die through which the outer lead of the lead frame is sandwiched.

また、前記サイドゲートの前記スプルーとの接続部分に前記第二の孔と繋がる樹脂溜めを設け、前記樹脂溜めから前記サイドゲートを介して前記第一の孔に渡る樹脂流路を形成することを特徴とする。   Further, a resin reservoir connected to the second hole is provided at a connection portion of the side gate with the sprue, and a resin flow path extending from the resin reservoir to the first hole via the side gate is formed. Features.

また、前記樹脂溜めにくびれ部を設けることを特徴とする。
また、前記第二の孔に前記樹脂溜めに近づくにつれて孔の径が広がるようにテーパーを設けることを特徴とする。
In addition, a constricted portion is provided in the resin reservoir.
Further, the second hole is provided with a taper so that the diameter of the hole increases as it approaches the resin reservoir.

さらに、本発明の半導体装置用パッケージは、半導体素子を搭載する半導体装置用パッケージであって、前記半導体素子と接続する接続電極および外部端子となるアウターリードが一体形成される複数のリードと、前記リードに形成される樹脂成形体と、前記樹脂成形体に設けられて前記接続電極を露出して前記半導体素子の搭載領域となる収容部と、前記リードの前記樹脂成形体内から前記樹脂成形体の外側にかかって設けられる第一の孔と、前記アウターリードに設けられた第二の孔と、前記アウターリード上の前記第一の孔に残るゲート残りとを有することを特徴とする。
以上により、外形寸法を拡大することなく、低背化を実現することができる。
Furthermore, the package for a semiconductor device of the present invention is a package for a semiconductor device on which a semiconductor element is mounted, wherein a plurality of leads in which outer electrodes serving as connection electrodes connected to the semiconductor element and external terminals are integrally formed, A resin molded body formed on the lead; a housing provided on the resin molded body to expose the connection electrode and serving as a mounting region of the semiconductor element; and from the resin molded body of the lead to the resin molded body A first hole provided on the outer side , a second hole provided in the outer lead, and a gate residue remaining in the first hole on the outer lead.
As described above, it is possible to reduce the height without increasing the outer dimensions.

以上のように、本発明の半導体装置およびその製造方法によれば、ゲート残りを収容するゲート逃がしが底部に不要になるため、外形寸法を拡大することなく、低背化を実現することができる。   As described above, according to the semiconductor device and the method for manufacturing the same according to the present invention, since the gate relief for accommodating the gate remainder is not required at the bottom, it is possible to realize a low profile without increasing the external dimensions. .

本発明の半導体装置用パッケージの製造方法は、成形金型のリードフレームを挟持するパーティングラインから樹脂を注入することにより、半導体装置用パッケージ底部にゲート逃がしを形成する必要がなくなり、リードフレームの折り曲げ部にゲート残りが残存するために、外形寸法を拡大することなく、低背化を実現することができる。つまり、半導体装置用パッケージの側面から樹脂を注入するため、厚み方向にゲート逃がしを形成する必要がなくなり、少なくとも半導体装置用パッケージの低背化を実現することができる。さらに、アウターリードが存在する領域から樹脂を注入することにより、ゲート残りがアウターリードの曲げ領域に収まり外形寸法を拡大することもない。   The semiconductor device package manufacturing method of the present invention eliminates the need to form a gate relief at the bottom of the semiconductor device package by injecting resin from a parting line that sandwiches the lead frame of the molding die. Since the gate residue remains in the bent portion, the height can be reduced without increasing the external dimensions. That is, since the resin is injected from the side surface of the semiconductor device package, it is not necessary to form a gate relief in the thickness direction, and at least a reduction in the height of the semiconductor device package can be realized. Further, by injecting the resin from the region where the outer lead exists, the remaining gate does not fit in the bent region of the outer lead and the external dimensions are not enlarged.

以下本発明の実施の形態について、図面を参照しながら説明する。
図1は本発明の半導体装置用パッケージに用いるリードフレームの構成を示す図であり、図1(a)は平面図,図1(b)は図1(a)のA−A断面図である。図2は本発明の半導体装置用パッケージの製造方法を示す工程断面図であり、図2(a)は図1(b)と同様のリードフレームの断面図である。
Embodiments of the present invention will be described below with reference to the drawings.
1A and 1B are diagrams showing a configuration of a lead frame used in a package for a semiconductor device according to the present invention. FIG. 1A is a plan view and FIG. 1B is a cross-sectional view taken along line AA in FIG. . FIG. 2 is a process sectional view showing a method for manufacturing a semiconductor device package according to the present invention, and FIG. 2A is a sectional view of a lead frame similar to FIG.

図1,図2において、1はリードフレーム、2は樹脂成形体形成予定部、3はリード、3aは接続用電極、3bはアウターリード、4はリードフレーム1を保持する枠体、5は第一の孔、6は第二の孔、6aはテーパー面、7は成型金型、7aは上型、7bは下型、8は樹脂成形体、9はサイドゲート、10はスプルー、11は樹脂溜め、11aはくびれ部、12はエジェクターピン、13はゲートパンチ、14はゲート残り、15は収容部を各々示している。   In FIGS. 1 and 2, 1 is a lead frame, 2 is a resin molded body forming portion, 3 is a lead, 3a is a connection electrode, 3b is an outer lead, 4 is a frame body for holding the lead frame 1, and 5 is a first One hole, 6 is a second hole, 6a is a tapered surface, 7 is a molding die, 7a is an upper die, 7b is a lower die, 8 is a resin molding, 9 is a side gate, 10 is a sprue, and 11 is a resin. Reservoir 11a is a constricted portion, 12 is an ejector pin, 13 is a gate punch, 14 is a gate remaining, and 15 is a receiving portion.

図1は製造に用いるリードフレーム1の構成を示し、1つの半導体装置用パッケージに用いるリード3が枠体4により複数接続された状態で樹脂成型される。リードフレーム1は搭載される半導体素子と接続される接続用電極3aと外部端子となるアウターリード3bとからなる複数のリード3から構成され、リード3には、少なくとも樹脂成形体形成予定部2にかかる第一の孔5と樹脂成形体形成予定部2外に形成される第二の孔6とが設けられている。このリードフレーム1の樹脂成形体形成予定部2に樹脂成型体8を形成して半導体装置用パッケージとなる。   FIG. 1 shows a configuration of a lead frame 1 used for manufacturing, and resin molding is performed in a state where a plurality of leads 3 used for a package for a semiconductor device are connected by a frame body 4. The lead frame 1 includes a plurality of leads 3 including connection electrodes 3a connected to a semiconductor element to be mounted and outer leads 3b serving as external terminals. The leads 3 include at least a resin molded body formation planned portion 2. The first hole 5 and the second hole 6 formed outside the resin molded body formation scheduled portion 2 are provided. A resin molded body 8 is formed on the resin molded body formation scheduled portion 2 of the lead frame 1 to form a package for a semiconductor device.

図2において、リードフレーム1は、上述のように、枠体4を形成する4辺のうちの対向する1組の2辺に各々リード3が支持されて形成されている。各々のリード3には各々のリード3を跨いで包含する樹脂成形体形成予定部2が想定され、樹脂成形体形成予定部2の内側から外側にかかる第一の孔5と、該第一の孔5よりも樹脂成形体形成予定部2から離れた位置に第二の孔6が開けられている(図2(a))。   In FIG. 2, as described above, the lead frame 1 is formed by supporting the leads 3 on a pair of opposing two sides among the four sides forming the frame body 4. Each lead 3 is assumed to have a resin molded body formation scheduled portion 2 including the respective leads 3, and includes a first hole 5 extending from the inside to the outside of the resin molded body formation planned portion 2, and the first A second hole 6 is formed at a position farther from the resin molded body formation scheduled portion 2 than the hole 5 (FIG. 2 (a)).

本発明の半導体装置用パッケージの製造方法は、リードフレームを成型金型7で挟持して成形金型7の内部に形成された空隙に成形樹脂を注入してリードフレーム1と成形樹脂とを一体に形成するインサート成形を行なうもので、成型金型7の上型7aと下型7bとのパーティングラインの、リードフレームのリード3が挟持される部分から成型金型7の空隙へ成形樹脂を注入するものである。   In the method for manufacturing a package for a semiconductor device of the present invention, a lead frame is sandwiched between molding dies 7 and a molding resin is injected into a gap formed in the molding die 7 so that the lead frame 1 and the molding resin are integrated. The molding resin is inserted from the part of the parting line of the upper mold 7a and the lower mold 7b of the molding die 7 where the lead 3 of the lead frame is sandwiched into the gap of the molding die 7. To be injected.

この時、リードフレームとして、上述のリードフレーム1を用いる事が好ましい。以下、リードフレーム1を用いた製造方法を説明する。
注入される成形樹脂の流路として、リードフレーム1を挟持する成型金型7の上型7aに樹脂供給部(図示せず)から連通するスプルー10がリードフレーム1に対して実質的に垂直に形成される。該スプルー10はリードフレーム1であるリード3に近づくに従い先細りするピンポイントゲートの形態を成し、その先端は、樹脂注入時にリード3に開けられた第二の孔6に接続されるように位置し、下型7bの第二の孔6が接続される部分にはスプルー10から第二の孔6を経て連続に繋がる所定の容量を有する円柱状の樹脂溜め11が形成される。該樹脂溜め11からリード3に沿って、下型7b側表面を這う様に第一の孔5に達するサイドゲート9が形成されている。樹脂溜め11の底面には下型7bに埋設されたエジェクターピン12の頂面が位置している。これにより、樹脂供給部(図示せず)から圧送される成形樹脂はスプルー10からリード3の第二の孔6を経て樹脂溜め11に溜り、サイドゲート9内を通って第一の孔5に達し、成型金型7の空隙に充填される。
At this time, it is preferable to use the above-described lead frame 1 as the lead frame. Hereinafter, a manufacturing method using the lead frame 1 will be described.
As a flow path of the molding resin to be injected, a sprue 10 communicated from a resin supply unit (not shown) to the upper mold 7a of the molding die 7 sandwiching the lead frame 1 is substantially perpendicular to the lead frame 1. It is formed. The sprue 10 is in the form of a pinpoint gate that tapers as it approaches the lead 3 that is the lead frame 1, and its tip is positioned so as to be connected to the second hole 6 opened in the lead 3 when resin is injected. A cylindrical resin reservoir 11 having a predetermined capacity that is continuously connected from the sprue 10 through the second hole 6 is formed at a portion to which the second hole 6 of the lower mold 7b is connected. A side gate 9 that reaches the first hole 5 is formed from the resin reservoir 11 along the lead 3 so as to cover the surface of the lower mold 7b. On the bottom surface of the resin reservoir 11, the top surface of the ejector pin 12 embedded in the lower mold 7b is located. As a result, the molding resin pumped from the resin supply unit (not shown) is accumulated in the resin reservoir 11 from the sprue 10 through the second hole 6 of the lead 3, and passes through the side gate 9 to the first hole 5. And the gap of the molding die 7 is filled.

成型金型7の下型7bにはリード3の表面へ達する凸部が台形状に形成されており、凸部によって収容部15が形成される。収容部15の底部ではリード3が成形樹脂から露出しており、接続用電極3aとなっている。以上のように、成型金型7の空隙に樹脂成形体8が形成される(図2(b))。   A convex portion reaching the surface of the lead 3 is formed in a trapezoidal shape on the lower mold 7b of the molding die 7, and the accommodating portion 15 is formed by the convex portion. The lead 3 is exposed from the molding resin at the bottom of the housing portion 15 and serves as a connection electrode 3a. As described above, the resin molded body 8 is formed in the gap of the molding die 7 (FIG. 2B).

次に、樹脂成形体8の成形が終了した後に、上型7aと下型7bとを型開きさせる。この際には、樹脂成形体8の形状と樹脂溜め11やサイドゲート9の存在により、上型7aよりも下型7bに対する接触面積が大きく、密着力が大きいので樹脂成形体8とリード3は下型7b側に残り、上型7aとは離れることに成る(図2(c))。   Next, after the molding of the resin molded body 8 is completed, the upper mold 7a and the lower mold 7b are opened. At this time, due to the shape of the resin molded body 8 and the presence of the resin reservoir 11 and the side gate 9, the contact area with the lower mold 7b is larger than that of the upper mold 7a, and the adhesion is greater. It remains on the lower mold 7b side and is separated from the upper mold 7a (FIG. 2 (c)).

また、ピンポイントゲートであるスプルー10の先端で成形樹脂が切断されて上型7aと共にスプルー10が離れる。
ここで、拡大図に示す様に、樹脂溜め11の周部にくびれ部11aを設けた場合には、樹脂溜め11と下型7bとのアンカー効果が得られて、型開きの際にスプルー10によって樹脂溜め11が下型7bから離れて浮き上がる事を確実に防止出来る。
Further, the molding resin is cut at the tip of the sprue 10 which is a pinpoint gate, and the sprue 10 is separated together with the upper die 7a.
Here, as shown in the enlarged view, when the constricted portion 11a is provided on the peripheral portion of the resin reservoir 11, an anchor effect between the resin reservoir 11 and the lower mold 7b is obtained, and the sprue 10 is opened when the mold is opened. Thus, it is possible to reliably prevent the resin reservoir 11 from floating away from the lower mold 7b.

次に、エジェクターピン12で樹脂溜め11を突き上げることで、一体に成形されたリード3と樹脂成形体8とサイドゲート9と樹脂溜め11を下型7bから離型させて取りだす(図2(d))。   Next, by pushing up the resin reservoir 11 with the ejector pin 12, the integrally formed lead 3, resin molded body 8, side gate 9, and resin reservoir 11 are released from the lower mold 7b and taken out (FIG. 2D). )).

次に、ゲートカット機(図示せず)のゲートパンチ13にてリード3のサイドゲート9が形成された側の表裏反対面より第二の孔6を通して樹脂溜め11を押圧することで該樹脂溜め11とサイドゲート9とを共にカットする。   Next, the resin reservoir 11 is pressed by pressing the resin reservoir 11 through the second hole 6 from the opposite surface of the lead 3 on the side where the side gate 9 is formed by the gate punch 13 of a gate cutting machine (not shown). 11 and the side gate 9 are cut together.

これにより、樹脂成形体8に残るゲート残り14は、樹脂成形体8から外側へ位置する第一の孔5内または第一の孔5上に止めることが可能である。
ここで、拡大図に示す様に、第二の孔6の断面を樹脂溜め11の側に拡がるテーパー面6aとした場合には、ゲートカットが容易と成り、リード3にかかるストレスを軽減することが可能と成る(図2(e))。
Accordingly, the remaining gate 14 remaining in the resin molded body 8 can be stopped in the first hole 5 or on the first hole 5 located outward from the resin molded body 8.
Here, as shown in the enlarged view, when the cross section of the second hole 6 is a tapered surface 6a that expands toward the resin reservoir 11, the gate can be easily cut and the stress applied to the lead 3 can be reduced. Is possible (FIG. 2E).

次に、必要に応じてリード3を定寸カットし、該リード3に、サイドゲート9が存在した面を外側として折り曲げてアウターリード3bを形成することにより半導体装置を形成する。アウターリード3bはガルウィング状に折り曲げても良いし、Jベンドを施してもよく、端子形状は任意である。   Next, if necessary, the lead 3 is cut to a certain size, and the lead 3 is bent with the surface on which the side gate 9 is present outside to form the outer lead 3b, thereby forming a semiconductor device. The outer lead 3b may be bent into a gull wing shape, may be J-bended, and the terminal shape is arbitrary.

このように、パーティングラインから樹脂を注入することにより、半導体装置用パッケージの底部にゲート逃がし104bを設けることが不要となり、半導体装置用パッケージの厚みを薄くすることが可能となる。   Thus, by injecting the resin from the parting line, it is not necessary to provide the gate relief 104b at the bottom of the semiconductor device package, and the thickness of the semiconductor device package can be reduced.

また、リード3のサイドゲート9が存在した面を外側として樹脂成形体8の側面に沿って曲げることで、ゲート残り14が第一の孔5からリード3の曲げの上側へ位置する関係と成るので、ゲート残り14が曲げの妨げと成ることが無い。   Further, by bending along the side surface of the resin molded body 8 with the side of the lead 3 where the side gate 9 is present as the outside, the remaining gate 14 is positioned above the bending of the lead 3 from the first hole 5. Therefore, the remaining gate 14 does not hinder bending.

また、樹脂成形体8に残るゲート残り14は第一の孔5の範囲に止まるので樹脂成形体8の側面からリード3を超えて突出すること無く、パッケージ寸法に影響を与えることが無い(図2(f))。   Further, since the remaining gate 14 remaining in the resin molded body 8 remains in the range of the first hole 5, it does not protrude beyond the lead 3 from the side surface of the resin molded body 8 and does not affect the package dimensions (FIG. 2 (f)).

かかる構成によれば、樹脂成形体8のゲート残り14を収めるためにゲート逃がし104bを底面に設ける必要が無いので、半導体装置用パッケージの肉厚を薄く形成可能となり、また、リード3の曲げ部分にゲート残り14を納めることができるので、低背化や小型化が可能となる。   According to such a configuration, since it is not necessary to provide the gate relief 104b on the bottom surface to accommodate the remaining gate 14 of the resin molded body 8, the thickness of the semiconductor device package can be reduced, and the bent portion of the lead 3 can be formed. Since the remaining gate 14 can be accommodated in the gate, the height and size can be reduced.

また、図1に示すリードフレーム1を用いない場合であっても、パーティングラインから樹脂を注入することにより、半導体装置用パッケージの底部にゲート逃がし104bを設けることが不要となり、少なくとも半導体装置用パッケージの厚みを薄くすることが可能となる。   Even when the lead frame 1 shown in FIG. 1 is not used, it is not necessary to provide the gate relief 104b at the bottom of the package for the semiconductor device by injecting resin from the parting line, and at least for the semiconductor device. The thickness of the package can be reduced.

また、1つの成形金型7で複数の半導体装置用パッケージを同時に樹脂成型する場合において、成形樹脂の流路のスペースとしてリード3の第一の孔5を利用することにより、成形金型7のパーティングラインである上型7aと下型7bとの接合面から成形樹脂を注入する際に、樹脂流路を別途確保する必要がなくなるので、成形金型7とリードフレーム1の配列のスペース効率を向上でき、同じ大きさの成形金型7で同時に多くの半導体装置用パッケージを成形することができる。   Further, in the case where a plurality of semiconductor device packages are simultaneously resin-molded with one molding die 7, the first hole 5 of the lead 3 is used as a space for the molding resin flow path. When the molding resin is injected from the joining surface of the upper mold 7a and the lower mold 7b, which is a parting line, it is not necessary to secure a resin flow path separately, so the space efficiency of the arrangement of the molding mold 7 and the lead frame 1 is eliminated. Many semiconductor device packages can be molded at the same time with the molding die 7 having the same size.

本発明の光半導体装置用パッケージの製造方法から得られる半導体装置用パッケージは、図2(f)に示すものである。
即ち、半導体素子を収容する為の収容部15を備える箱型の樹脂成形体8と、該収容部15の底面に露出する接続用電極3aから樹脂成形体8の外側へ延出してアウターリード3bと成る一または複数対のリード3を備え、アウターリード3bには樹脂成形体8内から樹脂成形体8の外側にかかる第一の孔5と該第一の孔5よりも樹脂成形体8から離れた所に位置する第二の孔6が開けられ、アウターリード3bは樹脂成形体8の収容部15が形成される表裏反対側方向へ樹脂成形体8の側面に沿って曲げられている。
The semiconductor device package obtained from the method for manufacturing an optical semiconductor device package of the present invention is as shown in FIG.
That is, a box-shaped resin molded body 8 having a housing portion 15 for housing a semiconductor element, and an outer lead 3b extending from the connection electrode 3a exposed on the bottom surface of the housing portion 15 to the outside of the resin molded body 8. The outer lead 3b includes a first hole 5 extending from the resin molded body 8 to the outside of the resin molded body 8 and the resin molded body 8 from the first hole 5. A second hole 6 located at a distant location is opened, and the outer lead 3b is bent along the side surface of the resin molded body 8 in the direction opposite to the front and back where the housing portion 15 of the resin molded body 8 is formed.

また、樹脂成形体8の側面に残るゲート残り14はアウターリード3bの第一の孔5上に位置する。
この様な半導体装置用パッケージを用いた半導体装置について、図3を用いて説明する。
The remaining gate 14 remaining on the side surface of the resin molded body 8 is located on the first hole 5 of the outer lead 3b.
A semiconductor device using such a package for a semiconductor device will be described with reference to FIG.

図3は本発明の半導体装置用パッケージを用いた半導体装置の構成を示す図である。
図3においては、半導体素子として光半導体素子を用いた光半導体装置を例として説明し、図1,図2と同じ構成要素は同じ符合を用い、説明を省略する。
FIG. 3 is a diagram showing a configuration of a semiconductor device using the package for a semiconductor device of the present invention.
In FIG. 3, an optical semiconductor device using an optical semiconductor element as a semiconductor element will be described as an example. The same constituent elements as those in FIGS.

図3に示す光半導体装置は、収容部15の底面に位置する接続用電極3aの一方に光半導体素子16が固着され、光半導体素子16のボンディング電極(図示せず)と他方の接続用電極3aとの間をワイヤー17でワイヤーボンドされ、光半導体素子16を含んで収容部15に透光性の封止樹脂18を満たしたものである。   In the optical semiconductor device shown in FIG. 3, the optical semiconductor element 16 is fixed to one of the connection electrodes 3a located on the bottom surface of the housing portion 15, and the bonding electrode (not shown) of the optical semiconductor element 16 and the other connection electrode are connected. 3a is wire-bonded with a wire 17 and includes the optical semiconductor element 16, and the accommodating portion 15 is filled with a translucent sealing resin 18.

なお、本発明の光半導体装置として、アウターリード3bの曲げ形状としては、樹脂成形体8の、収容部15が形成される表裏反対側方向へ該成形体8の側面に沿って曲げられ、さらに樹脂成形体8の収容部15が形成される面と平行な方向に曲げられているので、樹脂成形体8の収容部15が形成される表裏反対面で実装基板(図示せず)に実装されて、該実装基板(図示せず)の実装面に対して実質的に垂直方向の光軸を有する光を発する、所謂トップビュータイプとして説明したが、これに限定されるものでは無く、アウターリード3bの形状や曲げ方向によっては、実装基板(図示せず)に対する樹脂成形体8の実装面を変更して、該実装基板(図示せず)の実装面に対して実質的に平行な光軸を有する光を発する、所謂サイドビュータイプとすることも可能である。   In the optical semiconductor device of the present invention, the outer lead 3b is bent along the side surface of the molded body 8 in the direction opposite to the front and back of the molded body 8 where the housing portion 15 is formed. Since it is bent in a direction parallel to the surface on which the housing portion 15 of the resin molded body 8 is formed, the resin molded body 8 is mounted on a mounting board (not shown) on the front and back opposite surfaces on which the housing portion 15 is formed. The so-called top view type that emits light having an optical axis substantially perpendicular to the mounting surface of the mounting substrate (not shown) is not limited to this, but the outer lead Depending on the shape and bending direction of 3b, the mounting surface of the resin molded body 8 with respect to the mounting substrate (not shown) is changed so that the optical axis is substantially parallel to the mounting surface of the mounting substrate (not shown). So-called side view that emits light with It is also possible to type.

以上の説明では、外部端子となるアウターリード3bをガルウィング状に形成する例を図示して説明したが、Jベンドを施しても良く、端子形状は任意である。   In the above description, the example in which the outer leads 3b serving as the external terminals are formed in a gull wing shape is illustrated and described. However, J bend may be applied, and the terminal shape is arbitrary.

本発明は、外形寸法を拡大することなく、低背化を実現することができ、半導体素子搭載領域を備え、樹脂成型された半導体装置用パッケージおよびその製造方法等に有用である。   INDUSTRIAL APPLICABILITY The present invention can realize a reduction in height without enlarging the external dimensions, and is useful for a resin-molded semiconductor device package having a semiconductor element mounting region and its manufacturing method.

本発明の半導体装置用パッケージに用いるリードフレームの構成を示す図The figure which shows the structure of the lead frame used for the package for semiconductor devices of this invention 本発明の半導体装置用パッケージの製造方法を示す工程断面図Process sectional drawing which shows the manufacturing method of the package for semiconductor devices of this invention 本発明の半導体装置用パッケージを用いた半導体装置の構成を示す図The figure which shows the structure of the semiconductor device using the package for semiconductor devices of this invention 従来の半導体装置用パッケージの製造方法を説明する図The figure explaining the manufacturing method of the conventional package for semiconductor devices

1 リードフレーム
2 樹脂成形体形成予定部
3、103 リード
3a、103a 接続用電極
3b、103b アウターリード
4 枠体
5 第一の孔
6 第二の孔
6a テーパー面
7、110 成型金型
7a、110b 上型
7b、110a 下型
8、104 樹脂成形体
9 サイドゲート
10、111 スプルー
11 樹脂溜め
11a くびれ部
12 エジェクターピン
13 ゲートパンチ
14、104a ゲート残り
15、104c 収容部
16 光半導体素子
17 ワイヤー
18 封止樹脂
100 半導体装置用パッケージ
104b ゲート逃がし
DESCRIPTION OF SYMBOLS 1 Lead frame 2 Resin molded object formation scheduled part 3, 103 Lead 3a, 103a Connection electrode 3b, 103b Outer lead 4 Frame 5 First hole 6 Second hole 6a Tapered surface 7, 110 Mold 7a, 110b Upper die 7b, 110a Lower die 8, 104 Resin molded body 9 Side gate 10, 111 Sprue 11 Resin reservoir 11a Constricted portion 12 Ejector pin 13 Gate punch 14, 104a Gate remaining 15, 104c Housing portion 16 Optical semiconductor element 17 Wire 18 Sealing Resin 100 Package for semiconductor device 104b Gate escape

Claims (5)

樹脂成形体形成予定部にかかって形成される1または複数の第一の孔と、アウターリードに形成される1または複数の第二の孔とを備えたリードフレームを用い、
前記リードフレームを成形金型で挟持した状態で前記成形金型内部に形成される空隙に成形樹脂を注入して前記リードフレームと前記成形樹脂とを一体に形成するインサート成形の際に、
前記第二の孔から前記第一の孔に渡るサイドゲートを備えるスプルーを前記第二の孔に接続し、前記スプルーから前記第二の孔を介して前記成形金型のパーティングラインの、前記リードフレームのアウターリードが挟持される部分から前記空隙へ前記成形樹脂を注入することを特徴とする半導体装置用パッケージの製造方法。
Using a lead frame having one or more first holes formed over the resin molded body formation scheduled portion and one or more second holes formed in the outer lead,
In the insert molding in which the lead frame and the molding resin are integrally formed by injecting a molding resin into a gap formed inside the molding die with the lead frame sandwiched between the molding dies.
A sprue having a side gate extending from the second hole to the first hole is connected to the second hole, and the parting line of the molding die is connected to the second hole from the sprue through the second hole. A method of manufacturing a package for a semiconductor device, characterized in that the molding resin is injected into the gap from a portion where an outer lead of a lead frame is sandwiched.
前記サイドゲートの前記スプルーとの接続部分に前記第二の孔と繋がる樹脂溜めを設け、前記樹脂溜めから前記サイドゲートを介して前記第一の孔に渡る樹脂流路を形成することを特徴とする請求項1記載の半導体装置用パッケージの製造方法。 A resin reservoir connected to the second hole is provided at a connection portion of the side gate with the sprue, and a resin flow path extending from the resin reservoir to the first hole via the side gate is formed. A method for manufacturing a package for a semiconductor device according to claim 1. 前記樹脂溜めにくびれ部を設けることを特徴とする請求項2記載の半導体装置用パッケージの製造方法。 3. The method for manufacturing a package for a semiconductor device according to claim 2, wherein a constriction is provided in the resin reservoir . 前記第二の孔に前記樹脂溜めに近づくにつれて孔の径が広がるようにテーパーを設けることを特徴とする請求項2または請求項3記載の半導体装置用パッケージの製造方法。 4. The method of manufacturing a package for a semiconductor device according to claim 2 , wherein a taper is provided so that the diameter of the hole increases as the second hole approaches the resin reservoir . 半導体素子を搭載する半導体装置用パッケージであって、A package for a semiconductor device on which a semiconductor element is mounted,
前記半導体素子と接続する接続電極および外部端子となるアウターリードが一体形成される複数のリードと、  A plurality of leads formed integrally with an outer lead to be a connection electrode and an external terminal connected to the semiconductor element;
前記リードに形成される樹脂成形体と、  A resin molded body formed on the lead;
前記樹脂成形体に設けられて前記接続電極を露出して前記半導体素子の搭載領域となる収容部と、  A housing part provided on the resin molded body to expose the connection electrode and serve as a mounting region of the semiconductor element;
前記リードの前記樹脂成形体内から前記樹脂成形体の外側にかかって設けられる第一の孔と、  A first hole provided from the resin molded body of the lead to the outside of the resin molded body;
前記アウターリードに設けられた第二の孔と、  A second hole provided in the outer lead;
前記アウターリード上の前記第一の孔に残るゲート残りと  Gate residue remaining in the first hole on the outer lead
を有することを特徴とする半導体装置用パッケージ。A package for a semiconductor device, comprising:
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