JP5244650B2 - Ｓｏｉウェーハの製造方法 - Google Patents

Ｓｏｉウェーハの製造方法 Download PDF

Info

Publication number
JP5244650B2
JP5244650B2 JP2009043403A JP2009043403A JP5244650B2 JP 5244650 B2 JP5244650 B2 JP 5244650B2 JP 2009043403 A JP2009043403 A JP 2009043403A JP 2009043403 A JP2009043403 A JP 2009043403A JP 5244650 B2 JP5244650 B2 JP 5244650B2
Authority
JP
Japan
Prior art keywords
wafer
insulating film
soi
bonded
bond
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2009043403A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010199353A5 (enExample
JP2010199353A (ja
Inventor
浩司 阿賀
功 横川
宣彦 能登
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2009043403A priority Critical patent/JP5244650B2/ja
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to PCT/JP2010/000076 priority patent/WO2010098007A1/ja
Priority to US13/145,275 priority patent/US20110281420A1/en
Priority to KR1020117019761A priority patent/KR20110116036A/ko
Priority to EP10745896.0A priority patent/EP2402983B1/en
Priority to CN2010800086820A priority patent/CN102326227A/zh
Publication of JP2010199353A publication Critical patent/JP2010199353A/ja
Publication of JP2010199353A5 publication Critical patent/JP2010199353A5/ja
Application granted granted Critical
Publication of JP5244650B2 publication Critical patent/JP5244650B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10P90/1916—
    • H10P14/20—
    • H10P30/20—
    • H10P50/283—
    • H10P50/644—
    • H10W10/181—

Landscapes

  • Element Separation (AREA)
  • Weting (AREA)
JP2009043403A 2009-02-26 2009-02-26 Ｓｏｉウェーハの製造方法 Active JP5244650B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2009043403A JP5244650B2 (ja) 2009-02-26 2009-02-26 Ｓｏｉウェーハの製造方法
US13/145,275 US20110281420A1 (en) 2009-02-26 2010-01-08 Method for manufacturing soi wafer
KR1020117019761A KR20110116036A (ko) 2009-02-26 2010-01-08 Ｓｏｉ 웨이퍼의 제조 방법
EP10745896.0A EP2402983B1 (en) 2009-02-26 2010-01-08 Method for manufacturing soi wafer
PCT/JP2010/000076 WO2010098007A1 (ja) 2009-02-26 2010-01-08 Ｓｏｉウェーハの製造方法
CN2010800086820A CN102326227A (zh) 2009-02-26 2010-01-08 Soi晶片的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009043403A JP5244650B2 (ja) 2009-02-26 2009-02-26 Ｓｏｉウェーハの製造方法

Publications (3)

Publication Number Publication Date
JP2010199353A JP2010199353A (ja) 2010-09-09
JP2010199353A5 JP2010199353A5 (enExample) 2012-04-19
JP5244650B2 true JP5244650B2 (ja) 2013-07-24

Family

ID=42665227

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009043403A Active JP5244650B2 (ja) 2009-02-26 2009-02-26 Ｓｏｉウェーハの製造方法

Country Status (6)

Country Link
US (1) US20110281420A1 (enExample)
EP (1) EP2402983B1 (enExample)
JP (1) JP5244650B2 (enExample)
KR (1) KR20110116036A (enExample)
CN (1) CN102326227A (enExample)
WO (1) WO2010098007A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI430348B (zh) 2008-03-31 2014-03-11 Ｍｅｍｃ電子材料公司 蝕刻矽晶圓邊緣的方法
KR20110099108A (ko) 2008-11-19 2011-09-06 엠이엠씨 일렉트로닉 머티리얼즈, 인크. 반도체 웨이퍼의 에지를 스트리핑하기 위한 방법 및 시스템
JP5477277B2 (ja) * 2010-12-20 2014-04-23 信越半導体株式会社 Ｓｏｉウェーハの製造方法
US8853054B2 (en) 2012-03-06 2014-10-07 Sunedison Semiconductor Limited Method of manufacturing silicon-on-insulator wafers
JP5978764B2 (ja) 2012-05-24 2016-08-24 信越半導体株式会社 Ｓｏｉウェーハの製造方法
JP5862521B2 (ja) * 2012-09-03 2016-02-16 信越半導体株式会社 Ｓｏｉウェーハの製造方法
JP6056516B2 (ja) * 2013-02-01 2017-01-11 信越半導体株式会社 Ｓｏｉウェーハの製造方法及びｓｏｉウェーハ
US9177967B2 (en) * 2013-12-24 2015-11-03 Intel Corporation Heterogeneous semiconductor material integration techniques
CN105280541A (zh) * 2015-09-16 2016-01-27 中国电子科技集团公司第五十五研究所 一种用于超薄半导体圆片的临时键合方法及去键合方法
FR3076393A1 (fr) * 2017-12-28 2019-07-05 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de transfert d'une couche utile

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11121310A (ja) * 1997-10-09 1999-04-30 Denso Corp 半導体基板の製造方法
US6534380B1 (en) * 1997-07-18 2003-03-18 Denso Corporation Semiconductor substrate and method of manufacturing the same
JP3030545B2 (ja) 1997-07-19 2000-04-10 信越半導体株式会社 接合ウエーハの製造方法
DE69917819T2 (de) * 1998-02-04 2005-06-23 Canon K.K. SOI Substrat
JP4313874B2 (ja) * 1999-02-02 2009-08-12 キヤノン株式会社 基板の製造方法
JP4304879B2 (ja) 2001-04-06 2009-07-29 信越半導体株式会社 水素イオンまたは希ガスイオンの注入量の決定方法
FR2880184B1 (fr) * 2004-12-28 2007-03-30 Commissariat Energie Atomique Procede de detourage d'une structure obtenue par assemblage de deux plaques
CN101124657B (zh) * 2005-02-28 2010-04-14 信越半导体股份有限公司 贴合晶圆的制造方法及贴合晶圆
JP2007141946A (ja) * 2005-11-15 2007-06-07 Sumco Corp Ｓｏｉ基板の製造方法及びこの方法により製造されたｓｏｉ基板

Also Published As

Publication number Publication date
WO2010098007A1 (ja) 2010-09-02
US20110281420A1 (en) 2011-11-17
EP2402983A1 (en) 2012-01-04
KR20110116036A (ko) 2011-10-24
EP2402983B1 (en) 2015-11-25
CN102326227A (zh) 2012-01-18
EP2402983A4 (en) 2012-07-25
JP2010199353A (ja) 2010-09-09

Similar Documents

Publication Publication Date Title
JP5244650B2 (ja) Ｓｏｉウェーハの製造方法
JP5135935B2 (ja) 貼り合わせウエーハの製造方法
US8288251B2 (en) Method for preparing SOI substrate having backside sandblasted
WO2003009386A1 (en) Method for producing bonding wafer
WO2002084738A1 (en) Soi wafer and its manufacturing method
JP2010538459A (ja) 熱処理を用いる剥離プロセスにおける半導体ウエハの再使用
KR101910100B1 (ko) Soi 웨이퍼의 제조방법
JP6380245B2 (ja) Ｓｏｉウェーハの製造方法
JP4421652B2 (ja) Ｓｏｉウェーハの製造方法
JP5862521B2 (ja) Ｓｏｉウェーハの製造方法
JP2010092909A (ja) Ｓｏｉウェーハの製造方法
CN104364880B (zh) Soi晶片的制造方法
JP6200273B2 (ja) 貼り合わせウェーハの製造方法
KR20160052551A (ko) 접합 웨이퍼의 제조방법

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110124

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120302

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20120302

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20120321

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120403

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20120724

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121015

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20121022

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20121109

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130121

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130408

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20160412

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 5244650

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250