JP5244123B2 - プラズマ封じ込みのための電界低減装置 - Google Patents
プラズマ封じ込みのための電界低減装置 Download PDFInfo
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- JP5244123B2 JP5244123B2 JP2009544266A JP2009544266A JP5244123B2 JP 5244123 B2 JP5244123 B2 JP 5244123B2 JP 2009544266 A JP2009544266 A JP 2009544266A JP 2009544266 A JP2009544266 A JP 2009544266A JP 5244123 B2 JP5244123 B2 JP 5244123B2
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32559—Protection means, e.g. coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32587—Triode systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32633—Baffles
Description
Claims (20)
- チャンバ壁を有するプラズマ処理チャンバ内で基板を処理する方法であって、
前記チャンバ壁と接続している誘電ライナ内に、封入された筒状電極を有した電極構造物を提供するステップと、
前記筒状電極と前記チャンバ壁との間で接続される誘導回路構造物を提供するステップと、
前記基板を処理するために、前記電極構造物を前記プラズマ処理チャンバ内に配置した状態にて該プラズマ処理チャンバ内でプラズマを発生させるステップと、を含み
チャンバ壁はアース(接地)されており、
誘導回路構造物は、並列に接続され切り替え可能な複数のインダクタンスが異なるインダクタを含んでいることを特徴とする方法。 - 誘導回路構造物は抵抗と直列に接続された少なくとも1つのインダクタを含んでいることを特徴とする請求項1記載の方法。
- 誘電ライナはチャンバ壁に接着されていることを特徴とする請求項1記載の方法。
- 誘電ライナは少なくとも1つの非導電性の固定具を使用してチャンバ壁に接続されていることを特徴とする請求項1記載の方法。
- 電極はアルミニウムを含んだ材料で形成されていることを特徴とする請求項1記載の方法。
- プラズマ処理チャンバは容量結合されたプラズマ処理チャンバであることを特徴とする請求項1記載の方法。
- 誘電ライナは基板を処理するプラズマと共存できるように選択された誘電材料で形成されていることを特徴とする請求項1記載の方法。
- 誘導回路構造物は少なくとも1つの可変インダクタを含んでいることを特徴とする請求項1記載の方法。
- チャンバ壁を有するプラズマ処理チャンバ内でプラズマを利用して基板を処理するように設計されている、プラズマ処理チャンバを有したプラズマ処理システムであって、
前記チャンバ壁と接続している誘電ライナ内に、封入された筒状電極を有した電極構造物と、
前記筒状電極と接地(アース)状態との間で接続されている誘導回路構造物と、
前記電極構造物を前記プラズマ処理チャンバ内に配置した状態にて、前記プラズマを発生させ、前記基板を処理するように設計されているRF電力源に接続された下方電極と、
チャンバ壁はアース(接地)され、
誘導回路構造物は、並列に接続され切り替え可能な複数のインダクタンスが異なるインダクタを含んでいることを特徴とするシステム。 - 誘導回路構造物は抵抗と直列に接続された少なくとも1つのインダクタを含んでいることを特徴とする請求項9記載のシステム。
- 誘電ライナはチャンバ壁に接着されていることを特徴とする請求項9記載のシステム。
- 誘電ライナは少なくとも1つの非導電性固定具を使用してチャンバ壁に接続されていることを特徴とする請求項9記載のシステム。
- 電極はアルミニウムを含んだ材料で形成されていることを特徴とする請求項9記載のシステム。
- プラズマ処理チャンバは容量結合プラズマ処理チャンバであることを特徴とする請求項9記載のシステム。
- 誘電ライナはプラズマを利用して基板を処理するのに採用された処理法と両立するように選択された誘電材料で形成されていることを特徴とする請求項9記載のシステム。
- 誘導回路構造物は少なくとも1つの可変インダクタを含んでいることを特徴とする請求項9記載のシステム。
- チャンバ壁を有するプラズマ処理チャンバ内でプラズマを利用して基板を処理するように設計されている、プラズマ処理チャンバを有したプラズマ処理システムであって、
前記チャンバ壁に非接触状態で設置されている導電手段と、
プラズマ処理中に前記導電手段と前記チャンバ壁との間でプラズマが発生するのを阻止するように、該導電手段と該チャンバ壁との間に設置される誘電絶縁手段と、
前記導電手段と接地(アース)状態との間で接続されている誘導回路構造物と、
誘導回路構造物は、並列に接続され切り替え可能な複数のインダクタンスが異なるインダクタを含んでいることを特徴とするシステム。 - 誘導回路構造物は抵抗と直列に接続された少なくとも1つのインダクタを含んでいることを特徴とする請求項17記載のシステム。
- 誘導回路構造物は少なくとも1つの可変インダクタを含んでいることを特徴とする請求項17記載のシステム。
- プラズマ処理チャンバは容量結合プラズマ処理チャンバであることを特徴とする請求項17記載のシステム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/618,591 US7758718B1 (en) | 2006-12-29 | 2006-12-29 | Reduced electric field arrangement for managing plasma confinement |
US11/618,591 | 2006-12-29 | ||
PCT/US2007/088956 WO2008083227A1 (en) | 2006-12-29 | 2007-12-27 | Reduced electric field arrangement for managing plasma confinement |
Publications (2)
Publication Number | Publication Date |
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JP2010515232A JP2010515232A (ja) | 2010-05-06 |
JP5244123B2 true JP5244123B2 (ja) | 2013-07-24 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2009544266A Active JP5244123B2 (ja) | 2006-12-29 | 2007-12-27 | プラズマ封じ込みのための電界低減装置 |
Country Status (7)
Country | Link |
---|---|
US (2) | US7758718B1 (ja) |
JP (1) | JP5244123B2 (ja) |
KR (1) | KR101433408B1 (ja) |
CN (1) | CN101573783A (ja) |
SG (1) | SG177935A1 (ja) |
TW (1) | TWI469693B (ja) |
WO (1) | WO2008083227A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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US8627783B2 (en) * | 2008-12-19 | 2014-01-14 | Lam Research Corporation | Combined wafer area pressure control and plasma confinement assembly |
US8869741B2 (en) * | 2008-12-19 | 2014-10-28 | Lam Research Corporation | Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber |
US8901935B2 (en) * | 2009-11-19 | 2014-12-02 | Lam Research Corporation | Methods and apparatus for detecting the confinement state of plasma in a plasma processing system |
RU2503079C1 (ru) | 2012-04-24 | 2013-12-27 | Евгений Владимирович Берлин | Генератор плазмы (варианты) |
EP2979099B1 (en) * | 2013-03-27 | 2022-08-24 | Mercury Mission Systems, LLC | Lcd source driver feedback system and method |
US9831071B2 (en) | 2013-05-09 | 2017-11-28 | Lam Research Corporation | Systems and methods for using multiple inductive and capacitive fixtures for applying a variety of plasma conditions to determine a match network model |
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JP2002313785A (ja) * | 2001-04-17 | 2002-10-25 | Anelva Corp | 高周波プラズマ処理装置 |
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JP4710216B2 (ja) * | 2002-06-11 | 2011-06-29 | コニカミノルタホールディングス株式会社 | 薄膜形成方法 |
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JP4876641B2 (ja) * | 2006-03-09 | 2012-02-15 | 東京エレクトロン株式会社 | プラズマ処理装置 |
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-
2006
- 2006-12-29 US US11/618,591 patent/US7758718B1/en not_active Expired - Fee Related
-
2007
- 2007-12-27 KR KR1020097013279A patent/KR101433408B1/ko active IP Right Grant
- 2007-12-27 WO PCT/US2007/088956 patent/WO2008083227A1/en active Application Filing
- 2007-12-27 SG SG2011096963A patent/SG177935A1/en unknown
- 2007-12-27 JP JP2009544266A patent/JP5244123B2/ja active Active
- 2007-12-27 CN CNA2007800486592A patent/CN101573783A/zh active Pending
- 2007-12-28 TW TW96150749A patent/TWI469693B/zh active
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2010
- 2010-07-19 US US12/839,374 patent/US8206604B2/en active Active
Also Published As
Publication number | Publication date |
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KR20090094320A (ko) | 2009-09-04 |
JP2010515232A (ja) | 2010-05-06 |
SG177935A1 (en) | 2012-02-28 |
US7758718B1 (en) | 2010-07-20 |
KR101433408B1 (ko) | 2014-09-23 |
US8206604B2 (en) | 2012-06-26 |
WO2008083227A1 (en) | 2008-07-10 |
TWI469693B (zh) | 2015-01-11 |
TW200845827A (en) | 2008-11-16 |
CN101573783A (zh) | 2009-11-04 |
US20100279028A1 (en) | 2010-11-04 |
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Free format text: JAPANESE INTERMEDIATE CODE: R250 |