JP5238178B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5238178B2 JP5238178B2 JP2007083487A JP2007083487A JP5238178B2 JP 5238178 B2 JP5238178 B2 JP 5238178B2 JP 2007083487 A JP2007083487 A JP 2007083487A JP 2007083487 A JP2007083487 A JP 2007083487A JP 5238178 B2 JP5238178 B2 JP 5238178B2
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- semiconductor
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- floating gate
- layer
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007083487A JP5238178B2 (ja) | 2006-03-31 | 2007-03-28 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006101265 | 2006-03-31 | ||
| JP2006101265 | 2006-03-31 | ||
| JP2007083487A JP5238178B2 (ja) | 2006-03-31 | 2007-03-28 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007294928A JP2007294928A (ja) | 2007-11-08 |
| JP2007294928A5 JP2007294928A5 (enrdf_load_stackoverflow) | 2010-03-18 |
| JP5238178B2 true JP5238178B2 (ja) | 2013-07-17 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007083487A Expired - Fee Related JP5238178B2 (ja) | 2006-03-31 | 2007-03-28 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5238178B2 (enrdf_load_stackoverflow) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011108050A1 (ja) * | 2010-03-02 | 2011-09-09 | シャープ株式会社 | 薄膜トランジスタ基板及びその製造方法 |
| JP5790214B2 (ja) * | 2010-09-09 | 2015-10-07 | 株式会社デンソー | 横型の絶縁ゲート型バイポーラトランジスタ |
| TWI602303B (zh) | 2011-01-26 | 2017-10-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| US10141322B2 (en) | 2013-12-17 | 2018-11-27 | Intel Corporation | Metal floating gate composite 3D NAND memory devices and associated methods |
| KR102118440B1 (ko) * | 2018-09-05 | 2020-06-03 | 고려대학교 산학협력단 | 휘발성 및 비휘발성 동작변환 가능한 피드백 전계효과 배열소자 및 이를 이용한 배열 회로 |
| JP7405027B2 (ja) * | 2020-07-07 | 2023-12-26 | 豊田合成株式会社 | 半導体装置とその製造方法 |
Family Cites Families (7)
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|---|---|---|---|---|
| JP3018085B2 (ja) * | 1990-05-16 | 2000-03-13 | セイコーインスツルメンツ株式会社 | 半導体不揮発性メモリ |
| US5241507A (en) * | 1991-05-03 | 1993-08-31 | Hyundai Electronics America | One transistor cell flash memory assay with over-erase protection |
| JPH06168597A (ja) * | 1992-03-19 | 1994-06-14 | Fujitsu Ltd | フラッシュメモリ及びレベル変換回路 |
| JPH05275658A (ja) * | 1992-03-30 | 1993-10-22 | Toshiba Corp | 不揮発性半導体記憶装置 |
| JP3959165B2 (ja) * | 1997-11-27 | 2007-08-15 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| JP2000174241A (ja) * | 1998-12-10 | 2000-06-23 | Toshiba Corp | 不揮発性半導体記憶装置 |
| JP4531194B2 (ja) * | 1999-04-15 | 2010-08-25 | 株式会社半導体エネルギー研究所 | 電気光学装置及び電子機器 |
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2007
- 2007-03-28 JP JP2007083487A patent/JP5238178B2/ja not_active Expired - Fee Related
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|---|---|
| JP2007294928A (ja) | 2007-11-08 |
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