JP5237998B2 - 固体撮像素子、撮像装置および信号処理方法 - Google Patents
固体撮像素子、撮像装置および信号処理方法 Download PDFInfo
- Publication number
- JP5237998B2 JP5237998B2 JP2010158030A JP2010158030A JP5237998B2 JP 5237998 B2 JP5237998 B2 JP 5237998B2 JP 2010158030 A JP2010158030 A JP 2010158030A JP 2010158030 A JP2010158030 A JP 2010158030A JP 5237998 B2 JP5237998 B2 JP 5237998B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- photosensitive cell
- signal
- color
- cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000003384 imaging method Methods 0.000 title claims description 96
- 238000003672 processing method Methods 0.000 title description 4
- 230000003595 spectral effect Effects 0.000 claims description 132
- 238000006243 chemical reaction Methods 0.000 claims description 75
- 238000000034 method Methods 0.000 claims description 38
- 238000004364 calculation method Methods 0.000 claims description 20
- 230000003287 optical effect Effects 0.000 claims description 18
- 230000008569 process Effects 0.000 claims description 6
- 238000004611 spectroscopical analysis Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 description 20
- 239000000758 substrate Substances 0.000 description 20
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 14
- 230000035945 sensitivity Effects 0.000 description 9
- 239000003086 colorant Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000009826 distribution Methods 0.000 description 6
- 230000014509 gene expression Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000012860 organic pigment Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000010187 selection method Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/80—Camera processing pipelines; Components thereof
- H04N23/84—Camera processing pipelines; Components thereof for processing colour signals
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N2209/00—Details of colour television systems
- H04N2209/04—Picture signal generators
- H04N2209/041—Picture signal generators using solid-state devices
- H04N2209/042—Picture signal generators using solid-state devices having a single pick-up sensor
- H04N2209/047—Picture signal generators using solid-state devices having a single pick-up sensor using multispectral pick-up elements
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Color Television Image Signal Generators (AREA)
- Studio Devices (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010158030A JP5237998B2 (ja) | 2010-07-12 | 2010-07-12 | 固体撮像素子、撮像装置および信号処理方法 |
US13/498,598 US8520126B2 (en) | 2010-07-12 | 2011-04-22 | Solid-state image capturing element, image capturing device and signal processing method |
PCT/JP2011/002380 WO2012008076A1 (ja) | 2010-07-12 | 2011-04-22 | 固体撮像素子、撮像装置および信号処理方法 |
CN201180003763.6A CN102484723B (zh) | 2010-07-12 | 2011-04-22 | 固体摄像元件、摄像装置以及信号处理方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010158030A JP5237998B2 (ja) | 2010-07-12 | 2010-07-12 | 固体撮像素子、撮像装置および信号処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012023450A JP2012023450A (ja) | 2012-02-02 |
JP5237998B2 true JP5237998B2 (ja) | 2013-07-17 |
Family
ID=45469096
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010158030A Active JP5237998B2 (ja) | 2010-07-12 | 2010-07-12 | 固体撮像素子、撮像装置および信号処理方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8520126B2 (zh) |
JP (1) | JP5237998B2 (zh) |
CN (1) | CN102484723B (zh) |
WO (1) | WO2012008076A1 (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010082455A1 (ja) * | 2009-01-14 | 2010-07-22 | パナソニック株式会社 | 撮像装置 |
CN103503143B (zh) * | 2012-05-02 | 2016-12-28 | 松下电器(美国)知识产权公司 | 固体摄像元件以及摄像装置 |
JP6094832B2 (ja) * | 2012-09-03 | 2017-03-15 | パナソニックIpマネジメント株式会社 | 固体撮像素子および撮像装置 |
JP6039649B2 (ja) * | 2012-09-03 | 2016-12-07 | パナソニック インテレクチュアル プロパティ コーポレーション オブ アメリカPanasonic Intellectual Property Corporation of America | 固体撮像素子、撮像装置および信号処理方法 |
WO2014083836A1 (ja) | 2012-11-30 | 2014-06-05 | パナソニック株式会社 | 集光装置、固体撮像素子および撮像装置 |
JP2015096878A (ja) * | 2013-11-15 | 2015-05-21 | 日本オクラロ株式会社 | 光受信モジュール及び光送信モジュール |
TWI587359B (zh) * | 2013-12-02 | 2017-06-11 | 聯華電子股份有限公司 | 半導體感測裝置 |
JP6602763B2 (ja) * | 2014-07-25 | 2019-11-06 | 株式会社半導体エネルギー研究所 | 撮像装置 |
KR102316447B1 (ko) * | 2014-08-28 | 2021-10-22 | 삼성전자주식회사 | 광 이용 효율이 향상된 이미지 센서 |
JP2016102733A (ja) * | 2014-11-28 | 2016-06-02 | 株式会社東芝 | レンズ及び撮影装置 |
KR102409389B1 (ko) | 2015-10-06 | 2022-06-15 | 삼성전자주식회사 | 색분리 소자를 포함하는 이미지 센서 |
CN116088193A (zh) * | 2022-11-07 | 2023-05-09 | 北京京东方技术开发有限公司 | 显示装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5990467A (ja) | 1982-11-15 | 1984-05-24 | Mitsubishi Electric Corp | 固体撮像素子 |
JP2000151933A (ja) | 1998-11-06 | 2000-05-30 | Nec Corp | 撮像素子及びその製造方法 |
US7245325B2 (en) * | 2000-03-17 | 2007-07-17 | Fujifilm Corporation | Photographing device with light quantity adjustment |
JP2001309395A (ja) | 2000-04-21 | 2001-11-02 | Sony Corp | 固体撮像素子及びその製造方法 |
JP4652634B2 (ja) | 2001-08-31 | 2011-03-16 | キヤノン株式会社 | 撮像装置 |
JP4499348B2 (ja) * | 2002-11-28 | 2010-07-07 | ソニー株式会社 | 固体撮像装置及びその信号読み出し方法 |
JP4192867B2 (ja) * | 2004-08-30 | 2008-12-10 | ソニー株式会社 | 物理情報取得装置、複数の単位構成要素が配列されてなる物理量分布検知の半導体装置、並びに半導体装置の製造方法 |
KR100818987B1 (ko) * | 2006-09-19 | 2008-04-04 | 삼성전자주식회사 | 이미지 촬상 장치 및 상기 이미지 촬상 장치의 동작 방법 |
JP5325117B2 (ja) | 2008-06-18 | 2013-10-23 | パナソニック株式会社 | 固体撮像装置 |
JP5055643B2 (ja) * | 2008-07-28 | 2012-10-24 | 株式会社リコー | 撮像素子および画像撮像装置 |
US8314872B2 (en) | 2008-11-19 | 2012-11-20 | Panasonic Corporation | Imaging device |
WO2010070869A1 (ja) * | 2008-12-19 | 2010-06-24 | パナソニック株式会社 | 撮像装置 |
WO2010082455A1 (ja) * | 2009-01-14 | 2010-07-22 | パナソニック株式会社 | 撮像装置 |
-
2010
- 2010-07-12 JP JP2010158030A patent/JP5237998B2/ja active Active
-
2011
- 2011-04-22 US US13/498,598 patent/US8520126B2/en not_active Expired - Fee Related
- 2011-04-22 WO PCT/JP2011/002380 patent/WO2012008076A1/ja active Application Filing
- 2011-04-22 CN CN201180003763.6A patent/CN102484723B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2012023450A (ja) | 2012-02-02 |
WO2012008076A1 (ja) | 2012-01-19 |
US8520126B2 (en) | 2013-08-27 |
CN102484723A (zh) | 2012-05-30 |
CN102484723B (zh) | 2015-04-01 |
US20120182453A1 (en) | 2012-07-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5503459B2 (ja) | 固体撮像素子および撮像装置 | |
JP5237998B2 (ja) | 固体撮像素子、撮像装置および信号処理方法 | |
WO2011010455A1 (ja) | 撮像装置および固体撮像素子 | |
JP5331107B2 (ja) | 撮像装置 | |
JP5296077B2 (ja) | 撮像装置 | |
JP6039558B2 (ja) | 固体撮像装置 | |
JP5997149B2 (ja) | 固体撮像素子、撮像装置、および信号処理方法 | |
JP5894573B2 (ja) | 固体撮像素子、撮像装置および信号処理方法 | |
JP6039649B2 (ja) | 固体撮像素子、撮像装置および信号処理方法 | |
JP5852006B2 (ja) | 固体撮像素子、撮像装置および信号処理方法 | |
JP6039567B2 (ja) | 固体撮像装置 | |
JP2014086743A (ja) | 固体撮像素子、撮像装置、および信号処理方法 | |
JP2014086742A (ja) | 固体撮像素子、撮像装置、および信号処理方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20121107 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130305 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130329 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160405 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |