JP5235223B2 - Method for forming sputtered thin film on substrate and carrier - Google Patents

Method for forming sputtered thin film on substrate and carrier Download PDF

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JP5235223B2
JP5235223B2 JP2011113994A JP2011113994A JP5235223B2 JP 5235223 B2 JP5235223 B2 JP 5235223B2 JP 2011113994 A JP2011113994 A JP 2011113994A JP 2011113994 A JP2011113994 A JP 2011113994A JP 5235223 B2 JP5235223 B2 JP 5235223B2
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JP2011174185A (en
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敏行 小泉
旻生 徐
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Ulvac Inc
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Description

本発明は、フラットパネルディスプレイ(FPD)を製造する際の、ガラス基板にスパッタ薄膜を形成する工程などに適用される、基板へのスパッタ薄膜の形成方法および当該方法を実施するための搬送キャリアに関する。   The present invention relates to a method for forming a sputtered thin film on a substrate, which is applied to a step of forming a sputtered thin film on a glass substrate when manufacturing a flat panel display (FPD), and a carrier for carrying out the method. .

従来、基板への薄膜の形成方法および搬送キャリアとして知られているものには、例えば、特許文献1に記載のものがある。特許文献1には、四角形状の枠体と、枠体の対向する内周部と内周部の間に、その両端を枠体の各内周部と弾性部材を介して連結することでテンションを付加して架設した薄体状部材とから構成される搬送キャリアを用いた、ガラス基板へのMgO被膜などの蒸着被膜の形成方法が記載されている(例えば図2を参照のこと)。   Conventionally known methods for forming a thin film on a substrate and transport carriers include those described in Patent Document 1, for example. In Patent Document 1, a rectangular frame body, and an inner peripheral portion and an inner peripheral portion facing each other of the frame body, both ends thereof are connected to each inner peripheral portion of the frame body via an elastic member, thereby providing tension. A method of forming a vapor deposition film such as an MgO film on a glass substrate using a transport carrier composed of a thin member erected with an additional is described (for example, see FIG. 2).

特許文献1に記載の方法は、基板への蒸着被膜の形成方法として一応の評価をすることができるものである。しかしながら、この方法は、蒸着法に基づくものであるので、搬送キャリアに対して電気的な作用を考慮する必要がないことから、ここに記載の搬送キャリアの構成は、電気的な作用を何ら考慮したものではない。従って、真空状態のプラズマ雰囲気中で薄膜形成を行うスパッタ法に基づく方法に、特許文献1に記載の搬送キャリアを適用した場合、異常放電などを引き起こし、良質なスパッタ薄膜を安定して形成できないという問題がある。また、特許文献1に記載の方法は、蒸着法に基づくものとして評価した場合でも、次のような問題を有する。即ち、特許文献1に記載の方法は、その発明の詳細な説明の段落0012に記載の通り、ガラス基板を四角形状の枠体の内周部に設けた窓枠状の基板受けに載置することで保持するようにしている。従って、例えば、大型のガラス基板を加熱して蒸着被膜を形成する際、枠体自体を加熱しなければならないので、エネルギー消費量が膨大であるといった問題や、枠体の熱歪が起こるといった問題を有していた。また、ガラス基板を搬送キャリアにセットすることで初期に発生する機械応力を緩和することができないといった問題を有していた。さらに、ガラス基板に許容範囲を超える熱応力が発生するとこれを緩和することができないことに加え、ガラス基板の高熱による撓みを基板受けが十分に吸収することができないことで熱のびによって無視することのできない機械応力が発生するといった問題を有していた。その結果、熱負荷によるガラス基板の割れなどを誘発するおそれがあるといった問題を有していた。このような問題は、基板を加熱してスパッタ薄膜を形成する場合には、同じように問題となる。
特開2000−199046号公報
The method described in Patent Document 1 can be temporarily evaluated as a method for forming a vapor deposition film on a substrate. However, since this method is based on the vapor deposition method, it is not necessary to consider the electrical action on the transport carrier. Therefore, the configuration of the transport carrier described here takes into account any electrical action. It was n’t. Therefore, when the carrier described in Patent Document 1 is applied to a method based on a sputtering method for forming a thin film in a plasma atmosphere in a vacuum state, abnormal discharge and the like cannot be stably formed. There's a problem. Moreover, even when the method described in Patent Document 1 is evaluated based on the vapor deposition method, it has the following problems. That is, in the method described in Patent Document 1, as described in paragraph 0012 of the detailed description of the invention, a glass substrate is placed on a window frame-shaped substrate receiver provided on the inner periphery of a rectangular frame. To keep it. Therefore, for example, when a vapor deposition film is formed by heating a large glass substrate, the frame itself must be heated, so that the energy consumption is enormous and the frame is subject to thermal distortion. Had. In addition, there is a problem that mechanical stress generated in the initial stage cannot be relaxed by setting the glass substrate on the carrier. Furthermore, if thermal stress exceeding the allowable range occurs on the glass substrate, it cannot be alleviated, and the substrate holder cannot sufficiently absorb the bending due to the high heat of the glass substrate, so it should be ignored by heat spread. There is a problem that mechanical stress that cannot be generated occurs. As a result, there has been a problem that the glass substrate may be cracked by a thermal load. Such a problem similarly becomes a problem when the substrate is heated to form a sputtered thin film.
JP 2000-199046 A

そこで本発明は、簡易な構成で、異常放電などを引き起こすことなく、1枚のガラス基板から複数枚のパネルを安定に調製することを可能にする、基板へのスパッタ薄膜の形成方法および当該方法を実施するための搬送キャリアを提供することを目的とする。   Accordingly, the present invention provides a method for forming a sputtered thin film on a substrate and a method thereof that can stably prepare a plurality of panels from a single glass substrate without causing abnormal discharge or the like with a simple configuration. An object of the present invention is to provide a carrier for carrying out the above.

本発明者らは、上記の点に鑑みて種々の検討を行った結果、ガラス基板にスパッタ薄膜を形成するために用いる搬送キャリアを、四角形状の枠体と、枠体の対向する枠辺と枠辺の間に、枠体との間で絶縁した状態で、その両端を枠体の各枠辺と弾性部材を介して連結することでテンションを付加して架設した薄体状部材とから構成し、複数本の薄体状部材に、ガラス基板が搬送キャリアに載置されている状態を形成するための保持部材としての機能、および/または、ガラス基板における2つ以上のスパッタ薄膜形成領域を画定するためのマスク部材としての機能を担わせることで、上記の目的を達成することができることを知見した。   As a result of various investigations in view of the above points, the present inventors have determined that a carrier used for forming a sputtered thin film on a glass substrate is a rectangular frame and opposing frame sides of the frame. Consists of a thin member that is installed with tension applied by connecting both ends of the frame body to each frame side of the frame body via an elastic member while being insulated from the frame body. And a function as a holding member for forming a state in which the glass substrate is placed on the carrier, and / or two or more sputtered thin film formation regions in the glass substrate. It has been found that the above object can be achieved by providing a function as a mask member for defining.

上記の知見に基づいてなされた本発明の基板へのスパッタ薄膜の形成方法は、請求項1記載の通り、四角形状の基板を水平から垂直までの任意の角度に維持してスパッタ装置の処理室に搬送し、前記基板にスパッタ薄膜を形成するために用いられる搬送キャリアを、四角形状の枠体と、前記枠体の対向する枠辺と枠辺の間に、その両端を前記枠体の各枠辺と弾性部材を介して連結することでテンションを付加して架設した薄体状部材とから構成し、前記薄体状部材の厚みを0.1mm〜0.8mmとし、前記薄体状部材の熱膨張率を前記基板となるガラス基板の熱膨張率の±20%となるようにし、前記薄体状部材を、一方の対向する枠辺と枠辺の間に他方の枠辺に平行に1本以上、他方の対向する枠辺と枠辺の間に一方の枠辺に平行に1本以上、前記枠体との間で絶縁した状態で架設し、前記枠体と前記基板とが接することがないように前記薄体状部材のみで前記基板の載置面を構成し、且つ、前記基板の外周縁を前記薄体状部材によりマスクし、個々の前記薄体状部材に、前記基板が搬送キャリアに載置されている状態を形成するための保持部材としての機能、および、前記基板における2つ以上のスパッタ薄膜形成領域を画定するためのマスク部材としての機能を担わせ、前記基板にスパッタ薄膜を形成することを特徴とする。
また、本発明の搬送キャリアは、請求項2記載の通り、四角形状の基板を水平から垂直までの任意の角度に維持してスパッタ装置の処理室に搬送し、前記基板にスパッタ薄膜を形成するために用いられる搬送キャリアであって、四角形状の枠体と、前記枠体の対向する枠辺と枠辺の間に、その両端を前記枠体の各枠辺と弾性部材を介して連結することでテンションを付加して架設した薄体状部材とから構成され、前記薄体状部材の厚みを0.1mm〜0.8mmとし、前記薄体状部材の熱膨張率を前記基板となるガラス基板の熱膨張率の±20%となるようにし、前記薄体状部材を、一方の対向する枠辺と枠辺の間に他方の枠辺に平行に1本以上、他方の対向する枠辺と枠辺の間に一方の枠辺に平行に1本以上、前記枠体との間で絶縁した状態で架設し、前記枠体と前記基板とが接することがないように前記薄体状部材のみで前記基板の載置面を構成し、且つ、前記基板の外周縁を前記薄体状部材によりマスクし、個々の前記薄体状部材に、前記基板が搬送キャリアに載置されている状態を形成するための保持部材としての機能、および、前記基板における2つ以上のスパッタ薄膜形成領域を画定するためのマスク部材としての機能を担わせるようにしたことを特徴とする。
The method for forming a sputtered thin film on a substrate according to the present invention based on the above knowledge is characterized in that, as described in claim 1, a rectangular substrate is maintained at an arbitrary angle from horizontal to vertical, and a processing chamber of a sputtering apparatus. transported in a transport carrier which is used to form a sputtered film on the substrate, a rectangular frame, between opposite frame sides with the frame side of the frame, each of both ends of the frame A thin member formed by connecting a frame side and an elastic member to add a tension, and the thin member has a thickness of 0.1 mm to 0.8 mm, and the thin member The thermal expansion coefficient is ± 20% of the thermal expansion coefficient of the glass substrate serving as the substrate, and the thin member is parallel to the other frame side between the one frame side and the frame side. One or more, one parallel to one frame side between the other opposing frame sides Moreover, bridged while insulation between the frame body and constituting a mounting surface of said substrate only in a thin body member so as not to the frame body and said substrate are in contact, and, the The outer peripheral edge of the substrate is masked by the thin member, and the function as a holding member for forming the state in which the substrate is placed on the carrier in each thin member, and the substrate A function as a mask member for defining two or more sputtered thin film formation regions is formed, and a sputtered thin film is formed on the substrate.
Further, according to a second aspect of the present invention, the carrier according to the present invention maintains the rectangular substrate at an arbitrary angle from horizontal to vertical and transports it to the processing chamber of the sputtering apparatus to form a sputtered thin film on the substrate. a conveying carrier to be used for a rectangular frame, between opposite frame sides with the frame side of the frame, connecting the two ends through the respective frame sides and the elastic member of the frame A thin member formed by applying tension to the thin member, the thin member has a thickness of 0.1 mm to 0.8 mm, and the thermal expansion coefficient of the thin member is glass serving as the substrate. One or more of the thin members in parallel to the other frame side between one opposing frame side and the other opposing frame side, so as to be ± 20% of the thermal expansion coefficient of the substrate a frame side parallel to one or more in one frame sides during, shaped insulated between the frame In Erection and the so as not to the frame body and said substrate are in contact constitutes a mounting surface of the substrate only in a thin body member, and the mask by the thin body member outer peripheral edge of said substrate In each thin member, a function as a holding member for forming a state in which the substrate is placed on a transport carrier, and two or more sputtered thin film formation regions in the substrate are defined. It is characterized by having a function as a mask member for this purpose.

本発明によれば、簡易な構成で、異常放電などを引き起こすことなく、1枚のガラス基板から複数枚のパネルを安定に調製することを可能にする、基板へのスパッタ薄膜の形成方法および当該方法を実施するための搬送キャリアが提供される。   According to the present invention, it is possible to stably prepare a plurality of panels from a single glass substrate with a simple configuration without causing abnormal discharge or the like, and a method for forming a sputtered thin film on a substrate, A carrier for carrying out the method is provided.

以下、本発明の基板へのスパッタ薄膜の形成方法を、FPDを製造する際の、ガラス基板にITOスパッタ薄膜を形成する場合を例にとって図面を参照しながら説明する。   Hereinafter, a method for forming a sputtered thin film on a substrate of the present invention will be described with reference to the drawings, taking as an example the case of forming an ITO sputtered thin film on a glass substrate when manufacturing an FPD.

図1は、本発明の基板へのスパッタ薄膜の形成方法を実施するための搬送キャリアの一実施形態の概略平面図である。図1に示した搬送キャリアAは、ステンレスやチタンなどからなる四角形状の枠体1と、枠体1の対向する枠辺と枠辺の間に、その両端を枠体1の各枠辺と弾性部材としてのスプリング3を介して連結することでテンションを付加して架設した薄体状部材2とから構成される。薄体状部材2は、図1における横方向に対向する枠辺と枠辺の間に縦方向の枠辺に平行に3本、縦方向の対向する枠辺と枠辺の間に横方向の枠辺に平行に4本、枠体1との間で絶縁した状態で(即ち、枠体1に対して電気的にフローティングした状態で)架設されている。枠体1と薄板状部材2の間での絶縁性は、ポリイミド樹脂からなる絶縁板4を、ポリイミド樹脂からなる図略の絶縁ブッシュを介して枠体1にボルト5で固定し、このようにして枠体1に固定された絶縁板4にスプリング3を固定することで確保されている(もちろん絶縁性の確保の方法はこの方法に限定されるものではない)。   FIG. 1 is a schematic plan view of an embodiment of a carrier for carrying out the method for forming a sputtered thin film on a substrate of the present invention. The transport carrier A shown in FIG. 1 includes a rectangular frame 1 made of stainless steel, titanium, or the like, and between the opposite frame sides of the frame 1, and both ends of each frame side of the frame 1. The thin member 2 is constructed with a tension applied by connecting via a spring 3 as an elastic member. The thin member 2 has three horizontal sides opposite to each other in the horizontal direction in FIG. 1 in parallel to the vertical frame sides and a horizontal direction between the vertical side frames and the frame sides. Four of them are installed in parallel with the frame side in an insulated state from the frame body 1 (that is, in an electrically floating state with respect to the frame body 1). Insulation between the frame 1 and the thin plate member 2 is achieved by fixing the insulating plate 4 made of polyimide resin to the frame 1 with bolts 5 via an insulating bush made of polyimide resin, not shown. This is ensured by fixing the spring 3 to the insulating plate 4 fixed to the frame body 1 (of course, the method of ensuring insulation is not limited to this method).

図2は、図1に示した搬送キャリアAにガラス基板Xを載置した状態を示す概略平面図である。この態様においては、個々の薄体状部材2を、ガラス基板Xが搬送キャリアAに載置されている状態を形成するための保持部材として機能させるとともに、ガラス基板Xにおける6つのスパッタ薄膜形成領域(斜線で示すYの部分)を画定するためのマスク部材として機能させる。これにより、異常放電などを引き起こすことなく、1枚のガラス基板から6枚のパネルを安定に調製することが可能となる。また、ガラス基板を加熱して各スパッタ薄膜形成領域にITOスパッタ薄膜を形成する際でも、枠体を加熱する必要がないので、省エネルギー化を図ることができる。加えて、枠体の熱歪を抑制することができる。また、両端にテンションを付加した薄体状部材が、ガラス基板を搬送キャリアにセットすることで初期に発生する機械応力を緩和する。また、薄体状であることで熱容量が小さいことから、ガラス基板との温度差が小さくなるので、ガラス基板に発生する熱応力を軽減するとともに、ガラス基板に発生する熱応力を緩和する。さらに、ガラス基板の高熱による撓みを均等に吸収することで熱のびによる機械応力も緩和する。従って、特許文献1に記載の方法のように、ガラス基板を枠体の内周部に設けた窓枠状の基板受けに載置するといった態様の他、薄体状部材をガラス基板の保持部材として機能させる場合であっても、その両端を枠体の各枠辺と弾性部材を介さず固定するといった態様や、一方の端部のみ枠体の枠辺と弾性部材を介して連結することでテンションを付加し、他方の端部は枠体の枠辺と弾性部材を介さず固定するといった態様において起こりうる熱負荷によるガラス基板の割れなどを抑制することができる。   FIG. 2 is a schematic plan view showing a state where the glass substrate X is placed on the transport carrier A shown in FIG. In this embodiment, each thin member 2 functions as a holding member for forming a state in which the glass substrate X is placed on the carrier A, and six sputtered thin film formation regions in the glass substrate X are used. It is made to function as a mask member for demarcating (the Y portion shown by oblique lines). Thereby, it is possible to stably prepare six panels from one glass substrate without causing abnormal discharge or the like. Further, even when the ITO sputtered thin film is formed in each sputtered thin film forming region by heating the glass substrate, it is not necessary to heat the frame, so that energy saving can be achieved. In addition, the thermal distortion of the frame can be suppressed. Moreover, the thin-shaped member which added tension to both ends relieves the mechanical stress which generate | occur | produces initially by setting a glass substrate to a conveyance carrier. Further, since the heat capacity is small due to the thin body shape, the temperature difference with the glass substrate is reduced, so that the thermal stress generated in the glass substrate is reduced and the thermal stress generated in the glass substrate is reduced. Furthermore, the mechanical stress due to heat spread is alleviated by evenly absorbing the bending of the glass substrate due to high heat. Therefore, as in the method described in Patent Document 1, in addition to an aspect in which the glass substrate is placed on a window frame-shaped substrate receiver provided on the inner peripheral portion of the frame, the thin member is a holding member for the glass substrate. Even if it is made to function as an aspect which fixes both ends of each frame side and the elastic member without using an elastic member, or by connecting only one end portion through the elastic frame and the frame side of the frame. It is possible to suppress the breakage of the glass substrate due to a thermal load that may occur in an embodiment in which tension is applied and the other end is fixed without interposing the frame side of the frame without an elastic member.

薄体状部材の熱膨張率をガラス基板の熱膨張率の±20%とする。これにより、ガラス基板を加熱してITOスパッタ薄膜を形成する際、ガラス基板に発生する熱応力や機械応力をより効果的に緩和することができる。従って、熱負荷によるガラス基板の割れなどをより効果的に抑制することができる。例えば、ガラス基板としてホウケイ酸ガラスを用いる場合、薄体状部材はホウケイ酸ガラスと熱膨張率が近似するニッケル鉄合金からなるものが望ましい。   The thermal expansion coefficient of the thin member is set to ± 20% of the thermal expansion coefficient of the glass substrate. Thereby, when heating a glass substrate and forming an ITO sputtered thin film, the thermal stress and mechanical stress which generate | occur | produce in a glass substrate can be relieve | moderated more effectively. Therefore, the crack of the glass substrate by a heat load, etc. can be suppressed more effectively. For example, when borosilicate glass is used as the glass substrate, the thin member is preferably made of a nickel-iron alloy whose thermal expansion coefficient approximates that of borosilicate glass.

薄体状部材の厚みは0.1mm〜0.8mmとする。厚みが0.1mmを下回るとガラス基板の保持部材としての機能が十分でなくなるおそれがある一方、厚みが0.8mmを上回ると薄体状部材と薄体状部材の交差部分周囲に隙間が生じ、マスク部分へのITO成分の回り込み現象(所謂「膜ダレ現象」)が起こることで、ガラス基板におけるスパッタ薄膜形成領域への正確なITOスパッタ薄膜の形成ができなくなるおそれがある。   The thickness of the thin member is 0.1 mm to 0.8 mm. If the thickness is less than 0.1 mm, the function as a glass substrate holding member may not be sufficient. On the other hand, if the thickness exceeds 0.8 mm, a gap is generated around the intersection of the thin member and the thin member. If the ITO component wraps around the mask portion (so-called “film sagging phenomenon”), there is a possibility that an accurate ITO sputtered thin film cannot be formed on the sputtered thin film forming region of the glass substrate.

本発明の基板へのスパッタ薄膜の形成方法を実施するために用いるスパッタ装置は、図面による説明は省略するが、自体公知のものであってよく、搬送キャリアAによって水平から垂直までの任意の角度に維持された状態で処理室に搬送されてきたガラス基板Xに、真空状態のプラズマ雰囲気中で、ターゲットがイオン衝撃を受けることで生成したITO成分を付着させてITOスパッタ薄膜を形成することができる構造を有する装置であれば、どのような装置であってもよい。   The sputtering apparatus used for carrying out the method for forming a sputtered thin film on the substrate of the present invention is omitted from the description with reference to the drawings, but may be known per se, and any angle from horizontal to vertical by the carrier A An ITO sputtered thin film can be formed by adhering the ITO component generated by the target being subjected to ion bombardment in a vacuum plasma atmosphere on the glass substrate X that has been transported to the processing chamber while being maintained at Any device having a structure that can be used may be used.

なお、図1に示した搬送キャリアAは、ガラス基板Xにおける6つのスパッタ薄膜形成領域YにITOスパッタ薄膜を形成することで、1枚のガラス基板Xから6枚のパネルを調製するためのものであるが、薄体状部材2をスプリング3とともに枠体1から着脱自在とし、これらを枠体1の枠辺の任意の位置に任意の本数だけ架設することができるようにすれば、ガラス基板Xに2つ以上の任意の個数かつ任意の大きさのスパッタ薄膜形成領域Yを画定してITOスパッタ薄膜を形成することができるので、1枚のガラス基板Xから2枚以上の任意の枚数かつ任意の大きさのパネルを調製することができる。また、図1に示した搬送キャリアAに複数枚のガラス基板を載置するようにしてもよい。また、枠体1の内周部に、枠体1との間で絶縁した状態で、基板受けや基板押えを補助的に設けてもよい。   The transport carrier A shown in FIG. 1 is for preparing six panels from one glass substrate X by forming ITO sputtered thin films in the six sputtered thin film forming regions Y of the glass substrate X. However, if the thin member 2 is made detachable from the frame 1 together with the spring 3, and an arbitrary number of these members can be installed at arbitrary positions on the frame side of the frame 1, the glass substrate is obtained. An ITO sputtered thin film can be formed by demarcating two or more arbitrary numbers and arbitrary sizes of sputtered thin film forming regions Y in X, so that any number of two or more arbitrary numbers from one glass substrate X and Panels of any size can be prepared. Further, a plurality of glass substrates may be placed on the transport carrier A shown in FIG. In addition, a substrate receiver and a substrate presser may be provided on the inner peripheral portion of the frame body 1 while being insulated from the frame body 1.

本発明は、簡易な構成で、異常放電などを引き起こすことなく、1枚のガラス基板から複数枚のパネルを安定に調製することを可能にする、基板へのスパッタ薄膜の形成方法および当該方法を実施するための搬送キャリアを提供することができる点において産業上の利用可能性を有する。   The present invention provides a method for forming a sputtered thin film on a substrate and a method thereof that enable a plurality of panels to be stably prepared from a single glass substrate without causing abnormal discharge or the like with a simple configuration. It has industrial applicability in that it can provide a carrier for carrying out.

本発明の基板へのスパッタ薄膜の形成方法を実施するための搬送キャリアの一実施形態の概略平面図である。It is a schematic plan view of one Embodiment of the conveyance carrier for enforcing the formation method of the sputtered thin film to the board | substrate of this invention. 図1に示した搬送キャリアAにガラス基板Xを載置した状態を示す概略平面図である。It is a schematic plan view which shows the state which mounted the glass substrate X on the conveyance carrier A shown in FIG.

A 搬送キャリア
1 枠体
2 薄体状部材
3 スプリング
4 絶縁板
5 ボルト
X ガラス基板
Y スパッタ薄膜形成領域
A Transport carrier 1 Frame 2 Thin member 3 Spring 4 Insulating plate 5 Bolt X Glass substrate Y Sputtered thin film formation area

Claims (2)

四角形状の基板を水平から垂直までの任意の角度に維持してスパッタ装置の処理室に搬送し、前記基板にスパッタ薄膜を形成するために用いられる搬送キャリアを、四角形状の枠体と、前記枠体の対向する枠辺と枠辺の間に、その両端を前記枠体の各枠辺と弾性部材を介して連結することでテンションを付加して架設した薄体状部材とから構成し、前記薄体状部材の厚みを0.1mm〜0.8mmとし、前記薄体状部材の熱膨張率を前記基板となるガラス基板の熱膨張率の±20%となるようにし、前記薄体状部材を、一方の対向する枠辺と枠辺の間に他方の枠辺に平行に1本以上、他方の対向する枠辺と枠辺の間に一方の枠辺に平行に1本以上、前記枠体との間で絶縁した状態で架設し、前記枠体と前記基板とが接することがないように前記薄体状部材のみで前記基板の載置面を構成し、且つ、前記基板の外周縁を前記薄体状部材によりマスクし、個々の前記薄体状部材に、前記基板が搬送キャリアに載置されている状態を形成するための保持部材としての機能、および、前記基板における2つ以上のスパッタ薄膜形成領域を画定するためのマスク部材としての機能を担わせ、前記基板にスパッタ薄膜を形成することを特徴とする基板へのスパッタ薄膜の形成方法。 While maintaining the square shape of the substrate at any angle from horizontal to vertical and transported to the processing chamber of a sputtering apparatus, a conveying carrier used to form a sputtered film on the substrate, a rectangular frame, wherein between the frame side and the frame side opposite the frame body, and constitute a two ends and a thin body member which is bridged by adding tension by connecting through the frames edges and the elastic member of the frame body, The thickness of the thin member is 0.1 mm to 0.8 mm, and the thermal expansion coefficient of the thin member is set to be ± 20% of the thermal expansion coefficient of the glass substrate serving as the substrate. member, one of the opposed frame sides and the frame side parallel to one or more the other frame sides between the other opposing frame sides and the frame side parallel to one or more in one frame sides during the Installed in an insulated state from the frame body, so that the frame body and the substrate do not touch each other. Constitute mounting surface of the substrate only in a thin body member, and, masked by the thin body member outer peripheral edge of the substrate, the individual said thin body member, placing the substrate in the conveying carrier A sputtered thin film is formed on the substrate by having a function as a holding member for forming the applied state and a function as a mask member for defining two or more sputtered thin film forming regions in the substrate. A method for forming a sputtered thin film on a substrate. 四角形状の基板を水平から垂直までの任意の角度に維持してスパッタ装置の処理室に搬送し、前記基板にスパッタ薄膜を形成するために用いられる搬送キャリアであって、四角形状の枠体と、前記枠体の対向する枠辺と枠辺の間に、その両端を前記枠体の各枠辺と弾性部材を介して連結することでテンションを付加して架設した薄体状部材とから構成され、前記薄体状部材の厚みを0.1mm〜0.8mmとし、前記薄体状部材の熱膨張率を前記基板となるガラス基板の熱膨張率の±20%となるようにし、前記薄体状部材を、一方の対向する枠辺と枠辺の間に他方の枠辺に平行に1本以上、他方の対向する枠辺と枠辺の間に一方の枠辺に平行に1本以上、前記枠体との間で絶縁した状態で架設し、前記枠体と前記基板とが接することがないように前記薄体状部材のみで前記基板の載置面を構成し、且つ、前記基板の外周縁を前記薄体状部材によりマスクし、個々の前記薄体状部材に、前記基板が搬送キャリアに載置されている状態を形成するための保持部材としての機能、および、前記基板における2つ以上のスパッタ薄膜形成領域を画定するためのマスク部材としての機能を担わせるようにしたことを特徴とする搬送キャリア。 A transport carrier used to form a sputtered thin film on the substrate by transporting it to a processing chamber of a sputtering apparatus while maintaining a rectangular substrate at an arbitrary angle from horizontal to vertical, and a rectangular frame and , composed between the opposing frame sides and the frame side of the frame, a thin body member which is bridged by adding tension by the ends linked via the respective frame sides and the elastic member of the frame The thickness of the thin member is 0.1 mm to 0.8 mm, the thermal expansion coefficient of the thin member is ± 20% of the thermal expansion coefficient of the glass substrate that is the substrate, and the thin member One or more body members between one opposite frame side and the frame side in parallel with the other frame side, and one or more body members between the other opposite frame side and the frame side in parallel with one frame side has never bridged while insulated, the frame body and said substrate are in contact between said frame Uni the Configure mounting surface of the substrate only in a thin body member, and masks the outer periphery of the substrate by the thin body member, the individual said thin body member, said substrate transport carrier A function as a holding member for forming a mounted state, and a function as a mask member for defining two or more sputtered thin film formation regions in the substrate, To carry carrier.
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