JP5210880B2 - 半導体光装置及び透明光学部材 - Google Patents
半導体光装置及び透明光学部材 Download PDFInfo
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- CREMABGTGYGIQB-UHFFFAOYSA-N carbon carbon Chemical compound C.C CREMABGTGYGIQB-UHFFFAOYSA-N 0.000 claims description 9
- 150000003377 silicon compounds Chemical class 0.000 claims description 9
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- 238000006243 chemical reaction Methods 0.000 description 19
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/045—Polysiloxanes containing less than 25 silicon atoms
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/12—Polysiloxanes containing silicon bound to hydrogen
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
- C08G77/16—Polysiloxanes containing silicon bound to oxygen-containing groups to hydroxyl groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/70—Siloxanes defined by use of the MDTQ nomenclature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- Condensed Matter Physics & Semiconductors (AREA)
- Polymers & Plastics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
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- Silicon Polymers (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Semiconductor Lasers (AREA)
Description
(式(1)中、Aは炭素−炭素不飽和結合を有する基、Bは置換又は非置換の飽和アルキル基もしくは水酸基あるいは水素原子、R1,R2,R3,R4は各々独立に低級アルキル基、フェニル基、低級アリールアルキル基から選ばれる官能基を表し、mは6,8,10,12から選ばれた数、nは2〜m−1の整数、pは0〜m−nの整数を表す。但し、m−n−pは1以上の整数である。)
HR5R6Si−X−SiHR7R8 …(2)
(式(2)中、Xは2価の官能基又は酸素原子を表し、R5,R6,R7,R8は各々独立に炭素数1〜3のアルキル基又は水素原子を表す)
また本発明に係る透明光学部材は、下記式(1)で表されるかご型シルセスキオキサン化合物、又はこの化合物が部分付加反応したかご型シルセスキオキサン化合物の部分重合物と、下記式(2)で表される化合物とを含有するケイ素化合物を、重合して成ることを特徴とするものである。
(式(1)中、Aは炭素−炭素不飽和結合を有する基、Bは置換又は非置換の飽和アルキル基もしくは水酸基あるいは水素原子、R1,R2,R3,R4は各々独立に低級アルキル基、フェニル基、低級アリールアルキル基から選ばれる官能基を表し、mは6,8,10,12から選ばれた数、nは2〜m−1の整数、pは0〜m−nの整数を表す。但し、m−n−pは1以上の整数である。)
HR5R6Si−X−SiHR7R8 …(2)
(式(2)中、Xは2価の官能基又は酸素原子を表し、R5,R6,R7,R8は各々独立に炭素数1〜3のアルキル基又は水素原子を表す)
3 封止材
図1は半導体光装置の一例を示すものであり、基板1の表面に半導体発光素子2が実装され、半導体発光素子2の全体と基板1の表面の一部が封止材3により封止されている。この封止材3の表面には蛍光体の層4が形成されている。また基板1上には電子回路5が形成され、図1の実施の形態ではボンディングワイヤ6で半導体発光素子2と電気的に接続されている。
さらに基板1の表面には、上記のように半導体発光素子2と接続する所定のパターンの電気回路5が形成されているが、この形成方法は特に限定されず公知の方法を用いることができる。
HR5R6Si−X−SiHR7R8 …(2)
上記の式(1)において、Aは炭素−炭素不飽和結合を有する基を表すものであり、炭素−炭素二重結合または炭素−炭素三重結合を基の一部に含むものであれば特に限定はされない。例えば、アルケニル基、アルキニル基、シクロヘキセニル基を含むものを挙げることができるものであり、アルケニル基またはアルキニル基を含む基としては、例えばビニル基、アリル基等の炭素−炭素二重結合を有する基や、エチニル基、プロピニル基等の炭素−炭素三重結合を有する基を挙げることができる。また炭素−炭素二重結合または炭素−炭素三重結合を有する基と、不飽和基を有しない2価の基が結合した基を挙げることもできるものであり、この不飽和基を有しない2価の基が結合した基の例としては、シクロヘキセニルエチルジメチルシロキシ基等を挙げることができる。
上記の[化8]で合成したオクタアリルシルセスキオキサン1.0gに、テトラメチルジシロキサン0.47gを配合し、さらに3.0×10−3質量%濃度のPt(cts)トルエン溶液を、系全体の1ppm加え、均一に混合した後、空気中、120℃で3時間加熱することによって硬化させ、無色透明な樹脂板を得た。
上記の[化9]で合成した、−SiH基を2個持つヘキサアリルシルセスキオキサン1.0gに、テトラメチルジシロキサン0.24gを配合し、さらに3.0×10−3質量%濃度のPt(cts)トルエン溶液を、系全体の1ppm加え、均一に混合した後、空気中、120℃で3時間加熱することによって硬化させ、無色透明な樹脂板を得た。
上記の式(4)のように合成した、−OH基を2個持つヘキサアリルシルセスキオキサン1.0gに、テトラメチルジシロキサン0.50gを配合し、さらに3.0×10−3質量%濃度のPt(cts)トルエン溶液を、系全体の1ppm加え、均一に混合した後、空気中、120℃で3時間加熱することによって硬化させ、無色透明な樹脂板を得た。
上記の、[化9]の−SiH基を2個持つヘキサアリルシルセスキオキサンの合成例において、ヘキサン376mlに、アリルジメチルクロルシランを19.8ml、ジメチルクロルシランを14.6ml配合して、オクタアニオンを反応させるようにした他は、同様にして反応・精製することによって、上記の[化4]の−SiH基を4個持つテトラアリルシルセスキオキサンを合成した。そしてこの[化4]のテトラアリルシルセスキオキサンに3.0×10−3質量%濃度のPt(cts)トルエン溶液を1ppm加え、均一に混合した後、空気中、120℃で3時間加熱することによって硬化させ、無色透明な樹脂板を得た。
Claims (2)
- 下記式(1)で表されるかご型シルセスキオキサン化合物、又はこの化合物が部分付加反応したかご型シルセスキオキサン化合物の部分重合物と、下記式(2)で表される化合物とを含有するケイ素化合物で、半導体発光素子又は半導体受光素子を封止して重合して成ることを特徴とする半導体光装置。
(AR1R2SiOSiO1.5)n(BR3R4SiOSiO1.5)p(HOSiO1.5)m−n−p …(1)
(式(1)中、Aは炭素−炭素不飽和結合を有する基、Bは置換又は非置換の飽和アルキル基もしくは水酸基あるいは水素原子、R1,R2,R3,R4は各々独立に低級アルキル基、フェニル基、低級アリールアルキル基から選ばれる官能基を表し、mは6,8,10,12から選ばれた数、nは2〜m−1の整数、pは0〜m−nの整数を表す。但し、m−n−pは1以上の整数である。)
HR5R6Si−X−SiHR7R8 …(2)
(式(2)中、Xは2価の官能基又は酸素原子を表し、R5,R6,R7,R8は各々独立に炭素数1〜3のアルキル基又は水素原子を表す) - 下記式(1)で表されるかご型シルセスキオキサン化合物、又はこの化合物が部分付加反応したかご型シルセスキオキサン化合物の部分重合物と、下記式(2)で表される化合物とを含有するケイ素化合物を、重合して成ることを特徴とする透明光学部材。
(AR1R2SiOSiO1.5)n(BR3R4SiOSiO1.5)p(HOSiO1.5)m−n−p …(1)
(式(1)中、Aは炭素−炭素不飽和結合を有する基、Bは置換又は非置換の飽和アルキル基もしくは水酸基あるいは水素原子、R1,R2,R3,R4は各々独立に低級アルキル基、フェニル基、低級アリールアルキル基から選ばれる官能基を表し、mは6,8,10,12から選ばれた数、nは2〜m−1の整数、pは0〜m−nの整数を表す。但し、m−n−pは1以上の整数である。)
HR5R6Si−X−SiHR7R8 …(2)
(式(2)中、Xは2価の官能基又は酸素原子を表し、R5,R6,R7,R8は各々独立に炭素数1〜3のアルキル基又は水素原子を表す)
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JP2007031619A (ja) * | 2005-07-28 | 2007-02-08 | Nagase Chemtex Corp | 光素子封止用樹脂組成物 |
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JP4742216B2 (ja) * | 2004-07-08 | 2011-08-10 | Jnc株式会社 | ケイ素化合物 |
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JP2007031619A (ja) * | 2005-07-28 | 2007-02-08 | Nagase Chemtex Corp | 光素子封止用樹脂組成物 |
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