JP5208351B2 - 光学装置 - Google Patents
光学装置 Download PDFInfo
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- JP5208351B2 JP5208351B2 JP2004543284A JP2004543284A JP5208351B2 JP 5208351 B2 JP5208351 B2 JP 5208351B2 JP 2004543284 A JP2004543284 A JP 2004543284A JP 2004543284 A JP2004543284 A JP 2004543284A JP 5208351 B2 JP5208351 B2 JP 5208351B2
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- 230000003287 optical effect Effects 0.000 title claims description 82
- 239000000758 substrate Substances 0.000 claims description 188
- 238000012545 processing Methods 0.000 claims description 32
- 239000004065 semiconductor Substances 0.000 claims description 25
- 239000013078 crystal Substances 0.000 claims description 19
- 239000013307 optical fiber Substances 0.000 claims description 18
- 230000001902 propagating effect Effects 0.000 claims description 14
- 230000001154 acute effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 51
- 239000000463 material Substances 0.000 description 41
- 238000000034 method Methods 0.000 description 38
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 26
- 238000005530 etching Methods 0.000 description 16
- 238000001514 detection method Methods 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 239000000377 silicon dioxide Substances 0.000 description 13
- 239000000835 fiber Substances 0.000 description 12
- 238000000576 coating method Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 10
- 238000012546 transfer Methods 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 8
- 238000000151 deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 5
- 230000000873 masking effect Effects 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 230000002829 reductive effect Effects 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007735 ion beam assisted deposition Methods 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000010606 normalization Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000009718 spray deposition Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/856—Thermoelectric active materials comprising organic compositions
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4214—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Optical Couplings Of Light Guides (AREA)
- Light Receiving Elements (AREA)
Description
本出願は、Henry A. Blauvelt、David W. Vernooy及びHao Leeの名で2002年10月10日付けで出願された米国特許仮出願第60/417,805号、標題「Semiconductor photodetector with internal reflector」に基づく優先権を主張する。前記仮出願を参考のため、本明細書中に全体が示されたものとして引用する。
背景
概要
実施態様の詳細な説明
Claims (9)
- 半導体基板を用いて光学出力を検出する光学装置であって、
光検出器活性領域が形成された基板上面の一部を加工して形成され、前記基板上面に対して平行な光軸を有する光ビームを前記基板内に入射させる入口面と、
前記基板上面の別の一部を加工して形成され、前記入口面から入射させることにより屈折した光ビームを前記基板内にて内部反射させる反射面と、
前記基板上面に形成されており、前記反射面により内部反射させた光ビームが衝突するよう位置決めされた光検出器活性領域と、
を、前記基板上面に有し、
前記入口面及び前記反射面は、前記基板上面と交差するように、且つ、基板下面とは交差しないように形成されており、
前記光検出器活性領域が形成されている基板上面に対して前記入口面が鈍角を成しており、前記光検出器活性領域が形成されている基板上面に対して平行な光軸を有する光ビームが前記入口面を通る際、前記光ビームが前記光検出器活性領域から離反する方向に屈折するよう、前記入口面が位置決めされており、
前記光検出器活性領域が形成されている基板上面に対して前記反射面が鋭角を成しており、前記入口面を通る際に屈折して前記基板内に透過される光ビームが、前記反射面から前記光検出器活性領域が形成されている基板上面に向かって内部反射されるように、前記反射面が前記入口面に対して位置決めされており、
前記基板がInP単結晶基板であり、
前記基板上面が(100)面であり、前記反射面が(111)面または(1−1−1)面であることを特徴とする、光学装置。 - 前記光検出器活性領域がp−i−nフォトダイオードまたはアバランシェ・フォトダイオードを含む、請求項1に記載の光学装置。
- 前記光検出器活性領域が形成されている基板上面に対して前記入口面が90°を上回り120°以下の角度を成している、請求項1に記載の光学装置。
- 前記光検出器活性領域が形成されている基板上面に対して前記入口面が90°を上回り105°以下の角度を成している、請求項1に記載の光学装置。
- 前記光検出器活性領域が形成されている基板上面に対して平行な光軸を有し、前記入口面を通って前記基板内に伝搬される光ビームが、前記反射面から全内部反射させられる、請求項3または4に記載の光学装置。
- さらに、前記基板上面に形成された2つ以上の電気的な接点を含み、前記接点が前記光検出器活性領域に接続されている、請求項1に記載の光学装置。
- さらに、導波路基板上に位置決めされた光導波路を含み、
前記基板は、前記基板上面が前記導波路基板に面する状態で前記導波路基板上に載置され、
前記光導波路の端面から射出する光ビームが、前記入口面を通って前記基板内に透過され、前記反射面から内部反射され、そして前記光検出器活性領域上に衝突する、請求項1に記載の光学装置。 - 前記光導波路が、前記導波路基板上に形成されたプレーナー型導波路または前記導波路基板上の溝内に載置された光ファイバーである、請求項7に記載の光学装置。
- さらに、前記基板上に形成された溝と、
前記基板の前記溝内に載置された光ファイバーと、
を含み、
前記光ファイバーの端面から射出する光ビームが、前記入口面を通って前記基板内に透過され、前記反射面から内部反射され、そして前記光検出器活性領域上に衝突する、請求項1に記載の光学装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US41780502P | 2002-10-10 | 2002-10-10 | |
US60/417,805 | 2002-10-10 | ||
PCT/US2003/028419 WO2004034423A2 (en) | 2002-10-10 | 2003-09-12 | Semiconductor photodetector with internal reflector |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011149907A Division JP2011238948A (ja) | 2002-10-10 | 2011-07-06 | 光学装置 |
Publications (2)
Publication Number | Publication Date |
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JP2006511933A JP2006511933A (ja) | 2006-04-06 |
JP5208351B2 true JP5208351B2 (ja) | 2013-06-12 |
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JP2004543284A Expired - Fee Related JP5208351B2 (ja) | 2002-10-10 | 2003-09-12 | 光学装置 |
JP2011149907A Pending JP2011238948A (ja) | 2002-10-10 | 2011-07-06 | 光学装置 |
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JP2011149907A Pending JP2011238948A (ja) | 2002-10-10 | 2011-07-06 | 光学装置 |
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US (2) | US6992276B2 (ja) |
EP (1) | EP1586109B1 (ja) |
JP (2) | JP5208351B2 (ja) |
KR (1) | KR101037998B1 (ja) |
CN (1) | CN100555670C (ja) |
AU (1) | AU2003270519A1 (ja) |
CA (2) | CA2863017A1 (ja) |
WO (1) | WO2004034423A2 (ja) |
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US7492024B2 (en) * | 2005-07-15 | 2009-02-17 | Hoya Corporation Usa | Reflector for a double-pass photodetector |
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-
2003
- 2003-09-12 AU AU2003270519A patent/AU2003270519A1/en not_active Abandoned
- 2003-09-12 KR KR1020057006252A patent/KR101037998B1/ko not_active IP Right Cessation
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- 2003-09-12 JP JP2004543284A patent/JP5208351B2/ja not_active Expired - Fee Related
- 2003-09-12 CA CA2863017A patent/CA2863017A1/en not_active Abandoned
- 2003-09-12 CA CA2501420A patent/CA2501420C/en not_active Expired - Fee Related
- 2003-09-12 EP EP03752217A patent/EP1586109B1/en not_active Expired - Fee Related
- 2003-09-12 WO PCT/US2003/028419 patent/WO2004034423A2/en active Application Filing
- 2003-09-12 CN CNB038251531A patent/CN100555670C/zh not_active Expired - Fee Related
-
2006
- 2006-01-31 US US11/345,055 patent/US7148465B2/en not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
---|---|
US6992276B2 (en) | 2006-01-31 |
KR20050075355A (ko) | 2005-07-20 |
CA2863017A1 (en) | 2004-04-22 |
CA2501420C (en) | 2014-11-18 |
EP1586109A2 (en) | 2005-10-19 |
US20040129935A1 (en) | 2004-07-08 |
WO2004034423A2 (en) | 2004-04-22 |
EP1586109A4 (en) | 2006-05-31 |
AU2003270519A1 (en) | 2004-05-04 |
CN100555670C (zh) | 2009-10-28 |
KR101037998B1 (ko) | 2011-05-30 |
CN1768433A (zh) | 2006-05-03 |
EP1586109B1 (en) | 2012-10-24 |
JP2011238948A (ja) | 2011-11-24 |
JP2006511933A (ja) | 2006-04-06 |
US7148465B2 (en) | 2006-12-12 |
WO2004034423A3 (en) | 2005-12-08 |
US20060131482A1 (en) | 2006-06-22 |
CA2501420A1 (en) | 2004-04-22 |
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