JP5207671B2 - Semiconductor light emitting device package and semiconductor light emitting device - Google Patents

Semiconductor light emitting device package and semiconductor light emitting device Download PDF

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JP5207671B2
JP5207671B2 JP2007167039A JP2007167039A JP5207671B2 JP 5207671 B2 JP5207671 B2 JP 5207671B2 JP 2007167039 A JP2007167039 A JP 2007167039A JP 2007167039 A JP2007167039 A JP 2007167039A JP 5207671 B2 JP5207671 B2 JP 5207671B2
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semiconductor light
light emitting
cup
emitting device
package
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JP2009009956A (en
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祐之 阪本
優貴 白矢
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

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Description

本発明は、半導体発光装置用パッケージおよび半導体発光装置に関し、電子機器の液晶表示部のバックライト、照明等の各種光源として使用される半導体発光装置の技術に係るものである。   The present invention relates to a package for a semiconductor light-emitting device and a semiconductor light-emitting device, and relates to a technique of a semiconductor light-emitting device used as various light sources such as a backlight of a liquid crystal display unit of an electronic apparatus and illumination.

近年、高輝度、高出力な半導体発光装置としてＬＥＤを備えたＬＥＤ発光体等が開発されており、半導体発光装置は携帯型電子機器の液晶表示部のバックライト、照明用の各種光源として幅広く用いられている。   In recent years, LED light emitters equipped with LEDs have been developed as high-luminance and high-power semiconductor light-emitting devices, and the semiconductor light-emitting devices are widely used as backlights for liquid crystal display parts of portable electronic devices and various light sources for illumination. It has been.

半導体発光装置はその用途が拡大するにつれて今まで以上に信頼性の向上と高輝度化が求められており、半導体発光素子を収納する半導体発光装置用パッケージには、半導体発光素子から発光する光を効率よく照射することが要求されている。   As the use of semiconductor light emitting devices expands, higher reliability and higher brightness are demanded more than ever, and the light emitted from a semiconductor light emitting device is received in a package for a semiconductor light emitting device that houses the semiconductor light emitting device. Efficient irradiation is required.

この種の半導体発光装置において、高輝度を得るために半導体発光素子に大電流を流すと半導体発光素子の温度が急激に上昇し、この温度上昇により半導体発光装置から発光する光の輝度の劣化が生じる。   In this type of semiconductor light-emitting device, when a large current is passed through the semiconductor light-emitting element in order to obtain high brightness, the temperature of the semiconductor light-emitting element rises rapidly, and this temperature rise causes deterioration in the luminance of light emitted from the semiconductor light-emitting device. Arise.

この高輝度化を実現するための従来の半導体発光装置としては、例えば図１４に示すものがある。図１４において、１００は半導体発光装置用パッケージ、１１０ａはリード部、１１０ｂはリフレクター、１１１ａは半導体発光素子エリア、１１１ｂはワイヤーボンドエリア、１１２は収容部、１１３は樹脂材料、１１４は半導体発光素子、１１５はワイヤー、１１６は封止樹脂を各々示している。   As a conventional semiconductor light emitting device for realizing this high brightness, there is one shown in FIG. 14, for example. In FIG. 14, 100 is a package for a semiconductor light emitting device, 110a is a lead part, 110b is a reflector, 111a is a semiconductor light emitting element area, 111b is a wire bond area, 112 is a housing part, 113 is a resin material, 114 is a semiconductor light emitting element, Reference numeral 115 denotes a wire, and 116 denotes a sealing resin.

図１４において、半導体発光装置は、半導体発光装置用パッケージ１００の収容部１１２に半導体発光素子１１４と半導体発光素子１１４に電気的に接続して通電するワイヤー１１５を収容し、収容部１１２に充填する光透過性の封止樹脂１１６で半導体発光素子１１４およびワイヤー１１５を封止してなる。   In FIG. 14, in the semiconductor light emitting device, the housing portion 112 of the semiconductor light emitting device package 100 houses the semiconductor light emitting element 114 and the wire 115 that is electrically connected to the semiconductor light emitting element 114 and energizes, and fills the housing portion 112. The semiconductor light emitting element 114 and the wire 115 are sealed with a light transmissive sealing resin 116.

半導体発光装置用パッケージ１００は収容部１１２に半導体発光素子１１４から照射された光を反射して反射率の向上を図るリフレクター１１０ｂを設けており、収容部１１２の外周囲を覆うように樹脂材料１１３を設けている。   The semiconductor light emitting device package 100 is provided with a reflector 110b that reflects light emitted from the semiconductor light emitting element 114 in the housing portion 112 to improve the reflectivity, and a resin material 113 so as to cover the outer periphery of the housing portion 112. Is provided.

この構成では、リフレクター１１０ｂがリード部１１０ａと連続することで半導体発光素子１１４から発する熱の放熱性を向上させている。
特開２００３−１５２２２８号公報 In this configuration, the heat dissipation of heat generated from the semiconductor light emitting device 114 is improved by the reflector 110b being continuous with the lead portion 110a.
JP 2003-152228 A

ところで、上述した従来の半導体発光装置用パッケージ１００では、図１５（ａ）に示すように、銅板を打ち抜き加工することで、金属リードフレーム１１０にリード部１１０ａおよびリフレクター形成部１１０ｃを形成し、図１５（ｂ）に示すように、リフレクター形成部１１０ｃを曲げ起こして基準面となる金属リードフレーム１１０の主面上に起立させ、さらに半導体発光素子１１４を囲むように曲げ加工を行ってリフレクター１１０ｂを形成している。   Incidentally, in the conventional semiconductor light emitting device package 100 described above, as shown in FIG. 15A, a lead portion 110a and a reflector forming portion 110c are formed on a metal lead frame 110 by punching a copper plate. As shown in FIG. 15B, the reflector forming portion 110c is bent and raised on the main surface of the metal lead frame 110 serving as a reference surface, and further bent so as to surround the semiconductor light emitting element 114, thereby forming the reflector 110b. Forming.

このため、リフレクター１１０ｂは、その一部において半導体発光素子エリア１１１ａおよびワイヤーボンドエリア１１１ｂに部分的に支持されているだけであるために、変形し易い構造をなし、その反射面の角度が必ずしも安定しておらず、加工精度のバラツキが大きくなる構造的要因を有している。   For this reason, since the reflector 110b is only partially supported by the semiconductor light emitting element area 111a and the wire bond area 111b, the reflector 110b has a structure that is easily deformed, and the angle of the reflecting surface is not always stable. However, there is a structural factor that causes a large variation in processing accuracy.

また、切り曲げ加工によりリフレクター１１０ｂを形成する従来の構造では、リフレクター１１０ｂに継ぎ目１１０ｄや切れ目１１０ｅが生じ、この継ぎ目１１０ｄや切れ目１１０ｅがリフレクター１１０ｂにおける光の反射に影響を及ぼす要素となる。しかも継ぎ目１１０ｄや切れ目１１０ｅから漏出する樹脂材料１１３がリフレクター１１０ｂの内部に樹脂バリを形成し、この樹脂バリが輝度低下に影響する要因となる。   Further, in the conventional structure in which the reflector 110b is formed by cutting and bending, the joint 110d and the cut 110e are formed in the reflector 110b, and the joint 110d and the cut 110e are elements that affect the reflection of light in the reflector 110b. Moreover, the resin material 113 leaking from the joint 110d and the cut 110e forms a resin burr inside the reflector 110b, and this resin burr becomes a factor that affects the luminance reduction.

さらに、樹脂材料１１３から露出するリフレクター１１０ｂの端面が打ち抜き加工した状態のままの粗い面をなすが、この構造では樹脂成形時にリフレクター１１０ｂの端面を通して樹脂材料１１３が封止樹脂１１６の側へ漏出して樹脂バリの原因となる。   Further, the end surface of the reflector 110b exposed from the resin material 113 forms a rough surface as it is punched. In this structure, the resin material 113 leaks out to the sealing resin 116 through the end surface of the reflector 110b during resin molding. Cause resin burrs.

半導体発光装置用パッケージ１００は、切り曲げ加工したリフレクター１１０ｂの強度を確保するためにリフレクター１１０ｂの外周囲に所定厚みの樹脂材料１１３を成形しているが、リフレクター形成部１１０ｃが基準面となる金属リードフレーム１１０の主面上に起立し、リフレクター１１０ｂの底部にリード部１１０ａが位置するために、リフレクター形成部１１０ｃに続くリード部１１０ａの一部は樹脂材料１１３の内部に封じ込められる構造となり、リード部１１０ａにおける熱の放熱性を低下させる構造的要因を有し、温度上昇による半導体発光素子１１４の輝度劣化を必ずしも充分に抑制することが出来ないという課題を有していた。   In the semiconductor light emitting device package 100, a resin material 113 having a predetermined thickness is formed on the outer periphery of the reflector 110b in order to ensure the strength of the reflector 110b that has been cut and bent. However, the reflector forming portion 110c serves as a reference surface. Since the lead portion 110a stands on the main surface of the lead frame 110 and is located at the bottom of the reflector 110b, a part of the lead portion 110a following the reflector forming portion 110c is sealed inside the resin material 113, and the lead There is a structural factor that lowers heat dissipation in the portion 110a, and there is a problem that luminance deterioration of the semiconductor light emitting device 114 due to temperature rise cannot be sufficiently suppressed.

本発明は上記の課題を解決するものであり、半導体発光素子から発せられた熱を放熱する放熱作用を充分に高め、半導体発光素子の輝度の劣化を抑制することができる半導体発光装置用パッケージおよび半導体発光装置を提供することを目的とする。   SUMMARY OF THE INVENTION The present invention solves the above-described problem, a semiconductor light emitting device package capable of sufficiently enhancing a heat radiation function for dissipating heat generated from a semiconductor light emitting element and suppressing deterioration in luminance of the semiconductor light emitting element, and An object is to provide a semiconductor light emitting device.

上記の課題を解決するために、本発明の半導体発光装置用パッケージは、半導体発光素子および封止樹脂を収容する収容部を設けた半導体発光装置用パッケージであって、収容部の周囲を形成する樹脂部と、収容部の内面を形成する側部および底部を一体成形してなり側部がリフレクターをなすカップ部と、カップ部の開口縁から連続する形状をなして収容部の周縁部をなすパッケージ主面において樹脂部から露出し、樹脂部の外側に配置するリード部とを備え、カップ部がパッケージ主面に露出するリード部より下方へ窪む凹状をなし、所定間隙を介して一対のカップ部を相互に対向配置し、一方のカップ部が第一のリフレクターをなす側部と半導体発光素子エリアをなす底部とを一体成形してなり、他方のカップ部が第二のリフレクターをなす側部とワイヤーボンドエリアをなす底部とを一体成形し、カップ部の抜け止め用の係止部を双方のカップ部間の樹脂部に設けたものである。 In order to solve the above problems, a package for a semiconductor light emitting device of the present invention is a package for a semiconductor light emitting device provided with a housing portion for housing a semiconductor light emitting element and a sealing resin, and forms the periphery of the housing portion. The resin part, the side part that forms the inner surface of the housing part, and the bottom part are integrally molded, and the side part forms a reflector, and the peripheral part of the housing part is formed in a shape that continues from the opening edge of the cup part. A lead portion that is exposed from the resin portion on the package main surface and disposed outside the resin portion, and the cup portion has a concave shape that is recessed downward from the lead portion that is exposed on the package main surface, and a pair of gaps are formed via a predetermined gap. The cup parts are arranged opposite to each other, and one cup part is integrally formed with a side part forming a first reflector and a bottom part forming a semiconductor light emitting element area, and the other cup part is a second reflector. Integrally molded with the side and bottom forming the wire bonding area Nasu is a locking portion for retaining the cup portion that is provided on the resin portion between the cup portions of the both.

また、カップ部が開口縁にパッケージ主面に沿って広がるフランジ部を有するものである。 Further, the cup portion has a flange portion extending along the package main surface at the opening edge .

本発明の半導体発光装置は、上記の何れかの半導体発光装置用パッケージの収容部に半導体発光素子および封止樹脂を収容したものである。 A semiconductor light-emitting device of the present invention is obtained by housing a semiconductor light-emitting element and a sealing resin in a housing portion of any one of the semiconductor light-emitting device packages described above.

以上のように、本発明の半導体発光装置用パッケージによれば、リード部がカップ部の開口縁から連続する形状をなし、カップ部がリード部より下方へ窪む凹状をなすことで、前記収容部の周縁部をなすパッケージ主面においてリード部がカップ部の開口縁から連続して樹脂部から露出するので、リード部の全体において樹脂部の外側に露出面を形成することが可能となる。このため、リード部における熱の放熱性の向上を図って温度上昇による半導体発光素子の輝度劣化を充分に抑制することができる。   As described above, according to the semiconductor light emitting device package of the present invention, the lead portion has a shape that continues from the opening edge of the cup portion, and the cup portion has a concave shape that is recessed downward from the lead portion. Since the lead part is exposed from the resin part continuously from the opening edge of the cup part on the package main surface forming the peripheral part of the part, an exposed surface can be formed outside the resin part in the entire lead part. For this reason, it is possible to improve heat dissipation in the lead portion and sufficiently suppress the luminance deterioration of the semiconductor light emitting element due to the temperature rise.

カップ部が収容部の内面を形成する側部と底部とを一体成形してなり、側部と底部が連続面をなすことで、カップ部の側部からなるリフレクターは変形し難くなってその反射面の角度が安定し、角度の加工精度にバラツキが生じることなくなる。また、カップ部は、従来のような切り曲げ加工によらず、プレスによる絞り加工やエッチング加工により側部と底部とを一体成形するので、リフレクターに継ぎ目や切れ目が生じず、光の反射に影響を及ぼして高輝度化を疎外する要素を無くすることができる。さらに、リフレクターに継ぎ目や切れ目が生じないことで、継ぎ目や切れ目から樹脂材料が漏出してリフレクターの内部側に樹脂バリを形成することがなく、輝度低下に影響する要因となる樹脂バリを無くすることができる。   The cup part is formed by integrally forming the side part and the bottom part that form the inner surface of the housing part, and the side part and the bottom part form a continuous surface, so that the reflector composed of the side part of the cup part is difficult to deform and its reflection. The angle of the surface is stabilized, and the angle machining accuracy does not vary. In addition, the cup part is not formed by cutting and bending as in the past, but the side part and bottom part are integrally formed by drawing or etching with a press, so there are no joints or breaks in the reflector, affecting light reflection. This can eliminate the element that exempts high brightness. Furthermore, since there are no joints or cuts in the reflector, resin material does not leak from the joints or cuts to form resin burrs on the inner side of the reflector, eliminating resin burrs that cause a reduction in brightness. be able to.

また、カップ部が開口縁にパッケージ主面に沿って広がるフランジ部を有することで、樹脂成形時に樹脂材料がカップ部内に漏出することがなく、輝度低下に影響する要因となる樹脂バリを無くすることができる。   In addition, since the cup portion has a flange portion that extends along the main surface of the package at the opening edge, the resin material does not leak into the cup portion during resin molding, and resin burrs that cause a decrease in luminance are eliminated. be able to.

よって、本発明の半導体発光装置用パッケージは優れた放熱性と高輝度を実現できる。   Therefore, the semiconductor light emitting device package of the present invention can achieve excellent heat dissipation and high luminance.

以下本発明の実施の形態について、図面を参照しながら説明する。
実施の形態１
図１は本発明の実施の形態１に係る半導体発光装置用パッケージの斜視図である。図２は同半導体発光装置用パッケージを示し、（ａ）は底面図、（ｂ）は縦断面図、（ｃ）は背面図、（ｄ）は上面図、（ｅ）は正面図、（ｆ）は側面図、（ｇ）は横断面図である。 Embodiments of the present invention will be described below with reference to the drawings.
Embodiment 1
FIG. 1 is a perspective view of a package for a semiconductor light emitting device according to Embodiment 1 of the present invention. 2A and 2B show the semiconductor light emitting device package, wherein FIG. 2A is a bottom view, FIG. 2B is a longitudinal sectional view, FIG. 2C is a rear view, FIG. 2D is a top view, and FIG. ) Is a side view, and (g) is a cross-sectional view.

図１〜図２において、１０は第一のカップ部、１０ａは第一のリフレクター、１０ｂは半導体発光素子（図示省略）を搭載する半導体発光素子エリア、１０ｃは第一のリード部、１０ｄは第一のフランジ部、２０は第二のカップ部、２０ａは第二のリフレクター、２０ｂはワイヤー（図示省略）を接続するワイヤーボンドエリア、２０ｃは第二のリード部、２０ｄは第二のフランジ部、３０は半導体発光装置用パッケージ、３１は熱可塑性樹脂等からなる樹脂部、３２は収容部を各々示している。   1-2, 10 is a first cup portion, 10a is a first reflector, 10b is a semiconductor light emitting element area for mounting a semiconductor light emitting device (not shown), 10c is a first lead portion, and 10d is a first lead portion. One flange portion, 20 is a second cup portion, 20a is a second reflector, 20b is a wire bond area for connecting a wire (not shown), 20c is a second lead portion, 20d is a second flange portion, Reference numeral 30 denotes a semiconductor light emitting device package, 31 denotes a resin portion made of a thermoplastic resin, and 32 denotes an accommodating portion.

図１〜図２において、半導体発光装置用パッケージ３０は凹状の収容部３２を備えており、収容部３２は半導体発光素子（図示省略）および半導体発光素子とワイヤーボンドエリア２０ｂとを接続するワイヤ（図示省略）を封止する封止樹脂（図示省略）を収容するものである。   1 to 2, the package 30 for a semiconductor light emitting device includes a concave housing portion 32, and the housing portion 32 includes a semiconductor light emitting element (not shown) and a wire for connecting the semiconductor light emitting element and the wire bond area 20 b ( A sealing resin (not shown) for sealing (not shown) is accommodated.

半導体発光装置用パッケージ３０は、収容部３２の周囲に構造体をなす樹脂部３１を形成しており、収容部３２に第一のカップ部１０と第二のカップ部２０とが所定間隙を介して配置してある。   The semiconductor light emitting device package 30 has a resin portion 31 forming a structure around the housing portion 32, and the first cup portion 10 and the second cup portion 20 are placed in the housing portion 32 with a predetermined gap therebetween. Are arranged.

第一のカップ部１０と第二のカップ部２０は収容部３２の内面を形成する側部と底部とを一体成形してなり、第一のカップ部１０は側部が第一のリフレクター１０ａをなし、底部が半導体発光素子エリア１０ｂをなしており、第二のカップ部２０は側部が第二のリフレクター２０ａをなし、底部がワイヤーボンドエリア２０ｂをなしている。   The first cup portion 10 and the second cup portion 20 are formed by integrally forming a side portion and a bottom portion that form the inner surface of the housing portion 32, and the first cup portion 10 has the first reflector 10a on the side portion. None, the bottom portion forms the semiconductor light emitting element area 10b, the side portion of the second cup portion 20 forms the second reflector 20a, and the bottom portion forms the wire bond area 20b.

各カップ部１０、２０は開口縁にそれぞれ第一のフランジ部１０ｄ、第二のフランジ部２０ｄを有しており、第一のフランジ部１０ｄ、第二のフランジ部２０ｄは収容部３２の周縁部をなすパッケージ主面に沿って広がっている。   Each cup part 10, 20 has a first flange part 10 d and a second flange part 20 d at the opening edge, respectively, and the first flange part 10 d and the second flange part 20 d are peripheral parts of the housing part 32. It extends along the main surface of the package.

各カップ部１０、２０のそれぞれの開口縁から連続する形状をなす第一のリード部１０ｃおよび第二のリード部２０ｃは、収容部３２の周縁部をなすパッケージ主面（上面）において樹脂部３１から表面が露出し、樹脂部３１の外側に配置する部位が樹脂部３１の側面および底面に沿って折り曲げて配置してあり、第一のリード部１０ｃおよび第二のリード部２０ｃはその全長において樹脂部３１から露出する面を有している。
リフレクター１０ａ、２０ａの表面には、熱伝導率および反射率に優れた皮膜が施されている。皮膜としては金、銀、ニッケル、パラジウム、ロジウムなどを用いることが出来る。光の波長が４５０ｎｍから８００ｎｍの可視光領域の場合、銀の皮膜が好適である。
また、皮膜を施す方法としては電気めっきや無電解めっきなどのめっき法、蒸着法、スパッタリング法などを用いることが出来る。複数が連続した条材に施すにはめっき法が好適である。
この構成によれば、反射率に優れた皮膜によって、半導体発光素子からの発光を効率よく半導体発光装置用パッケージ３０から出射することができる。さらに、半導体発光素子の動作に起因する発熱をフランジ部１０ｄ、２０ｄからも効率よく外部拡散することで放熱性を高め、半導体発光素子が高温に曝されることで生じる輝度低下を抑制することができる。 The first lead portion 10c and the second lead portion 20c, which are continuous from the respective opening edges of the cup portions 10 and 20, have a resin portion 31 on the package main surface (upper surface) forming the peripheral portion of the housing portion 32. The surface of the resin portion 31 is exposed and the portion disposed outside the resin portion 31 is bent along the side surface and the bottom surface of the resin portion 31, and the first lead portion 10 c and the second lead portion 20 c are at their entire length. It has a surface exposed from the resin part 31.
The surface of the reflectors 10a and 20a is provided with a film having excellent thermal conductivity and reflectance. As the film, gold, silver, nickel, palladium, rhodium, or the like can be used. In the case where the light wavelength is in the visible light region of 450 nm to 800 nm, a silver film is suitable.
In addition, as a method for applying the film, a plating method such as electroplating or electroless plating, a vapor deposition method, a sputtering method, or the like can be used. A plating method is suitable for applying a plurality of continuous strips.
According to this configuration, the light emission from the semiconductor light emitting element can be efficiently emitted from the package for semiconductor light emitting device 30 by the film having excellent reflectance. Furthermore, heat dissipation due to the operation of the semiconductor light emitting element is efficiently diffused from the flange portions 10d and 20d to improve heat dissipation, and to suppress a decrease in luminance caused by the semiconductor light emitting element being exposed to high temperatures. it can.

以下に、カップ部１０、２０およびリード部１０ｃ、２０ｃの成形について説明する。図５に示すように、銅板を打ち抜き加工することで、金属リードフレーム５０にリード部１０ｃ、２０ｃおよびカップ形成部５０ａ、５０ｂを形成する。   Below, shaping | molding of the cup parts 10 and 20 and the lead parts 10c and 20c is demonstrated. As shown in FIG. 5, the lead portions 10 c and 20 c and the cup forming portions 50 a and 50 b are formed on the metal lead frame 50 by punching a copper plate.

次に、図３〜図４に示すように、カップ形成部５０ａ、５０ｂにプレスによる絞り加工やエッチング加工により基準面となる金属リードフレーム５０の主面より下方に窪む凹状のカップ部１０、２０を形成する。   Next, as shown in FIGS. 3 to 4, the cup-shaped portions 50 a and 50 b are recessed cup portions 10 that are recessed below the main surface of the metal lead frame 50 that serves as a reference surface by drawing or etching by pressing. 20 is formed.

次に、図示を省略するが、上記の半導体発光装置用パッケージ３０の収容部３２に半導体発光素子および封止樹脂を収容することで半導体発光装置となる。
上記した構成により、本発明の半導体発光装置用パッケージによれば、リード部１０ｃ、２０ｃがカップ部１０、２０の開口縁から連続する形状をなし、かつカップ部１０、２０がリード部リード部１０ｃ、２０ｃを基準として下方へ窪む凹状をなす構造を有することで、収容部３２の周縁部をなすパッケージ主面においてリード部１０ｃ、２０ｃおよびフランジ部１０ｄ、２０ｄがカップ部１０、２０の開口縁から連続して樹脂部３１から露出するので、リード部１０ｃ、２０ｃの全体に樹脂部３１の外側に露出する面を形成することが可能となる。よって、リード部１０ｃ、２０ｃにおける熱の放熱性の向上を図って温度上昇による半導体発光素子の輝度劣化を充分に抑制することができる。 Next, although not shown in the drawing, a semiconductor light emitting device is obtained by housing the semiconductor light emitting element and the sealing resin in the housing portion 32 of the package 30 for semiconductor light emitting device.
With the configuration described above, according to the package for a semiconductor light emitting device of the present invention, the lead portions 10c and 20c are continuous from the opening edges of the cup portions 10 and 20, and the cup portions 10 and 20 are the lead portion lead portion 10c. 20c, the lead portions 10c and 20c and the flange portions 10d and 20d are open edges of the cup portions 10 and 20 on the package main surface forming the peripheral portion of the housing portion 32. Since it is continuously exposed from the resin portion 31, it is possible to form a surface exposed to the outside of the resin portion 31 on the entire lead portions 10c and 20c. Therefore, it is possible to improve heat dissipation in the lead portions 10c and 20c and sufficiently suppress the luminance deterioration of the semiconductor light emitting element due to the temperature rise.

また、カップ部１０、２０が収容部３２の内面を形成する側部と底部とを一体成形してなり、第一のカップ部１０では側部からなる第一のリフレクター１０ａと底部をなす半導体発光素子エリア１０ｂとが全体的に連続面をなし、第二のカップ部２０では側部からなる第二のリフレクター２０ａと底部をなすワイヤーボンドエリア２０ｂとが全体的に連続面をなすことで、カップ部１０、２０の側部からなるリフレクター１０ａ、２０ａは変形し難くなってその反射面の角度が安定し、角度の加工精度にバラツキが生じることがなくなる。   In addition, the cup portions 10 and 20 are formed by integrally forming the side portion and the bottom portion forming the inner surface of the housing portion 32, and the first cup portion 10 and the first reflector 10a including the side portions and the semiconductor light emission forming the bottom portion. The element area 10b forms a continuous surface as a whole, and in the second cup portion 20, the second reflector 20a including the side portion and the wire bond area 20b forming the bottom portion form a continuous surface as a whole. The reflectors 10a and 20a formed by the side portions of the portions 10 and 20 are not easily deformed, and the angle of the reflecting surface is stabilized, and the angle processing accuracy does not vary.

また、カップ部１０、２０は、従来のような切り曲げ加工によらず、プレスによる絞り加工やエッチング加工により側部と底部とを一体成形するので、リフレクター１０ａ、２０ａに継ぎ目や切れ目が生じず、光の反射に影響を及ぼして高輝度化を疎外する要素を無くすることができる。   Further, since the cup portions 10 and 20 are integrally formed with the side portion and the bottom portion by a drawing process or an etching process by a press, not by a conventional cutting and bending process, there is no seam or break in the reflectors 10a and 20a. It is possible to eliminate an element that affects the reflection of light and alienates the increase in luminance.

さらに、リフレクター１０ａ、２０ａに継ぎ目や切れ目が生じないことで、継ぎ目や切れ目から樹脂材料が漏出してリフレクター１０ａ、２０ａの内部側に樹脂バリを形成することがなく、輝度低下に影響する要因となる樹脂バリを無くすることができる。   Furthermore, since there are no joints or breaks in the reflectors 10a and 20a, the resin material does not leak from the joints or breaks, and a resin burr is not formed on the inner side of the reflectors 10a and 20a. The resin burr | flash which becomes can be eliminated.

また、カップ部１０、２０が開口縁にパッケージ主面に沿って広がるフランジ部１０ｄ、２０ｄを有することで、樹脂成形時に樹脂材料がカップ部１０、２０の内部に漏出することがなく、輝度低下に影響する要因となる樹脂バリを無くすることができる。
実施の形態２
カップ部１０、２０は、図６に示すように、フランジ部１０ｄ、２０ｄの裏面側に樹脂部３１へ突き出る突状部１０ｅ、２０ｅを形成しても良く、この構造によりカップ部１０、２０と樹脂部３１との密着性が向上する。
実施の形態３
カップ部１０、２０は、図７に示すように、フランジ部１０ｄ、２０ｄの裏面側に段部１０ｆ、２０ｆを形成しても良く、この構造によりカップ部１０、２０と樹脂部３１との密着性が向上する。
実施の形態４
さらに、図８〜図９に示すように、収容部３２の内側においてカップ部１０、２０の間の樹脂部３１に抜け止め用の係止部３１ａを設け、係止部３１ａで双方のカップ部１０、２０のリフレクター１０ａ、２０ａを係止することで、カップ部１０、２０と樹脂部３１との密着性が向上する。
実施の形態５
また、図１０〜図１１に示すように、収容部３２の内側においてカップ部１０、２０の間の樹脂部３１に抜け止め用の係止部３１ｂを設け、係止部３１ｂで双方のカップ部１０、２０の半導体発光素子エリア１０ｂおよびワイヤーボンドエリア２０ｂを係止することで、カップ部１０、２０と樹脂部３１との密着性が向上する。
実施の形態６
また、図１２〜図１３に示すように、収容部３２の外側で、収容部３２の周縁部をなすパッケージ主面においてカップ部１０、２０の間の樹脂部３１に抜け止め用の係止部３１ｃを設け、係止部３１ｃで双方のカップ部１０、２０のフランジ部１０ｄ、２０ｄを係止することで、カップ部１０、２０と樹脂部３１との密着性が向上する。 In addition, since the cup portions 10 and 20 have flange portions 10d and 20d that extend along the main surface of the package at the opening edge, the resin material does not leak into the cup portions 10 and 20 during resin molding, and the luminance is reduced. It is possible to eliminate resin burrs that are factors that affect the process.
Embodiment 2
As shown in FIG. 6, the cup portions 10 and 20 may be formed with protruding portions 10e and 20e protruding to the resin portion 31 on the back side of the flange portions 10d and 20d. Adhesiveness with the resin part 31 improves.
Embodiment 3
As shown in FIG. 7, the cup portions 10 and 20 may be formed with step portions 10f and 20f on the back surface side of the flange portions 10d and 20d. With this structure, the cup portions 10 and 20 and the resin portion 31 are in close contact with each other. Improves.
Embodiment 4
Further, as shown in FIGS. 8 to 9, a retaining portion 31a for retaining is provided in the resin portion 31 between the cup portions 10 and 20 inside the accommodating portion 32, and both the cup portions are provided by the retaining portion 31a. By locking the 10 and 20 reflectors 10a and 20a, the adhesiveness between the cup portions 10 and 20 and the resin portion 31 is improved.
Embodiment 5
Further, as shown in FIGS. 10 to 11, a retaining portion 31 b for preventing the slipping is provided in the resin portion 31 between the cup portions 10 and 20 inside the accommodating portion 32, and both the cup portions are provided by the retaining portion 31 b. By locking the semiconductor light emitting element area 10b and the wire bond area 20b of 10 and 20, the adhesion between the cup parts 10 and 20 and the resin part 31 is improved.
Embodiment 6
As shown in FIGS. 12 to 13, on the outer surface of the housing portion 32, a locking portion for retaining the resin portion 31 between the cup portions 10, 20 on the package main surface forming the peripheral portion of the housing portion 32. By providing 31c and locking the flange portions 10d and 20d of the cup portions 10 and 20 with the locking portion 31c, the adhesion between the cup portions 10 and 20 and the resin portion 31 is improved.

本発明は半導体発光装置用パッケージとして有用であり、特に高輝度で小型化が要求される半導体発光装置用パッケージに適している。   The present invention is useful as a package for a semiconductor light-emitting device, and is particularly suitable for a package for a semiconductor light-emitting device that is required to be miniaturized with high brightness.

本発明の実施の形態１に係る半導体発光装置用パッケージの斜視図The perspective view of the package for semiconductor light-emitting devices concerning Embodiment 1 of this invention. 同半導体発光装置用パッケージを示し、（ａ）は底面図、（ｂ）は縦断面図、（ｃ）は背面図、（ｄ）は上面図、（ｅ）は正面図、（ｆ）は側面図、（ｇ）は横断面図The package for the semiconductor light emitting device is shown, (a) is a bottom view, (b) is a longitudinal sectional view, (c) is a rear view, (d) is a top view, (e) is a front view, and (f) is a side view. Figure, (g) is a cross-sectional view 同半導体発光装置用パッケージのカップ部を示す斜視図The perspective view which shows the cup part of the package for the semiconductor light-emitting devices 同半導体発光装置用パッケージのカップ部を示し、（ａ）は上面図、（ｂ）は側面図、（ｃ）は縦断面図、（ｄ）は横断面図The cup part of the package for semiconductor light-emitting devices is shown, (a) is a top view, (b) is a side view, (c) is a longitudinal sectional view, and (d) is a transverse sectional view. 同半導体発光装置用パッケージの金属リードフレームにおけるカップ形成部を示し、（ａ）は上面図、（ｂ）は正面図The cup formation part in the metal lead frame of the package for semiconductor light-emitting devices is shown, (a) is a top view, (b) is a front view. 本発明の実施の形態２に係る半導体発光装置用パッケージの断面図Sectional drawing of the package for semiconductor light-emitting devices which concerns on Embodiment 2 of this invention. 本発明の実施の形態３に係る半導体発光装置用パッケージの断面図Sectional drawing of the package for semiconductor light-emitting devices which concerns on Embodiment 3 of this invention. 本発明の実施の形態４に係る半導体発光装置用パッケージの斜視図The perspective view of the package for semiconductor light-emitting devices which concerns on Embodiment 4 of this invention. 同半導体発光装置用パッケージを示し、（ａ）は底面図、（ｂ）は縦断面図、（ｃ）は背面図、（ｄ）は上面図、（ｅ）は正面図、（ｆ）は側面図、（ｇ）は横断面図The package for the semiconductor light emitting device is shown, (a) is a bottom view, (b) is a longitudinal sectional view, (c) is a rear view, (d) is a top view, (e) is a front view, and (f) is a side view. Figure, (g) is a cross-sectional view 本発明の実施の形態５に係る半導体発光装置用パッケージの斜視図The perspective view of the package for semiconductor light-emitting devices which concerns on Embodiment 5 of this invention. 同半導体発光装置用パッケージを示し、（ａ）は底面図、（ｂ）は縦断面図、（ｃ）は背面図、（ｄ）は上面図、（ｅ）は正面図、（ｆ）は側面図、（ｇ）は横断面図The package for the semiconductor light emitting device is shown, (a) is a bottom view, (b) is a longitudinal sectional view, (c) is a rear view, (d) is a top view, (e) is a front view, and (f) is a side view. Figure, (g) is a cross-sectional view 本発明の実施の形態６に係る半導体発光装置用パッケージの斜視図The perspective view of the package for semiconductor light-emitting devices which concerns on Embodiment 6 of this invention. 同半導体発光装置用パッケージを示し、（ａ）は底面図、（ｂ）は縦断面図、（ｃ）は背面図、（ｄ）は上面図、（ｅ）は正面図、（ｆ）は側面図、（ｇ）は横断面図The package for the semiconductor light emitting device is shown, (a) is a bottom view, (b) is a longitudinal sectional view, (c) is a rear view, (d) is a top view, (e) is a front view, and (f) is a side view. Figure, (g) is a cross-sectional view 従来の半導体発光装置用パッケージを示す断面図Sectional drawing which shows the package for conventional semiconductor light-emitting devices 従来の半導体発光装置用パッケージの金属リードフレームにおけるリフレクター形成部を示し、（ａ）は加工前の展開図、（ｂ）は加工後の組立図The reflector formation part in the metal lead frame of the conventional package for semiconductor light-emitting devices is shown, (a) is a development before processing, and (b) is an assembly drawing after processing.

符号の説明Explanation of symbols

１０ 第一のカップ部
１０ａ 第一のリフレクター
１０ｂ 半導体発光素子エリア
１０ｃ 第一のリード部
１０ｄ 第一のフランジ部
１０ｅ 突状部
１０ｆ 段部
２０ 第二のカップ部
２０ａ 第二のリフレクター
２０ｂ ワイヤーボンドエリア
２０ｃ 第二のリード部
２０ｄ 第二のフランジ部
２０ｅ 突状部
２０ｆ 段部
３０ 半導体発光装置用パッケージ
３１ 樹脂部
３１ａ、３１ｂ、３１ｃ 係止部
３２ 収容部
５０ 金属リードフレーム
５０ａ、５０ｂ カップ形成部 DESCRIPTION OF SYMBOLS 10 1st cup part 10a 1st reflector 10b Semiconductor light-emitting device area 10c 1st lead part 10d 1st flange part 10e Projection part 10f Step part 20 2nd cup part 20a 2nd reflector 20b Wire bond area 20c Second lead portion 20d Second flange portion 20e Protruding portion 20f Step portion 30 Semiconductor light emitting device package 31 Resin portion 31a, 31b, 31c Locking portion 32 Housing portion 50 Metal lead frame 50a, 50b Cup forming portion

Claims (3)

半導体発光素子および封止樹脂を収容する収容部を設けた半導体発光装置用パッケージであって、前記収容部の周囲を形成する樹脂部と、前記収容部の内面を形成する側部および底部を一体成形してなり前記側部がリフレクターをなすカップ部と、前記カップ部の開口縁から連続する形状をなして前記収容部の周縁部をなすパッケージ主面において前記樹脂部から露出し、前記樹脂部の外側に配置するリード部とを備え、前記カップ部が前記パッケージ主面に露出する前記リード部より下方へ窪む凹状をなし、
所定間隙を介して一対のカップ部を相互に対向配置し、一方のカップ部が第一のリフレクターをなす側部と半導体発光素子エリアをなす底部とを一体成形してなり、他方のカップ部が第二のリフレクターをなす側部とワイヤーボンドエリアをなす底部とを一体成形し、
前記カップ部の抜け止め用の係止部を双方のカップ部間の前記樹脂部に設けたことを特徴とする半導体発光装置用パッケージ。 A package for a semiconductor light emitting device provided with a housing portion for housing a semiconductor light emitting element and a sealing resin, wherein a resin portion forming the periphery of the housing portion and a side portion and a bottom portion forming an inner surface of the housing portion are integrated. A molded cup part whose side part forms a reflector, and a package main surface that forms a peripheral part of the housing part by forming a shape continuous from an opening edge of the cup part, and is exposed from the resin part. A lead portion disposed on the outside of the lead portion, the cup portion having a concave shape recessed downward from the lead portion exposed on the package main surface ,
A pair of cup portions are arranged opposite to each other with a predetermined gap, and one cup portion is integrally formed with a side portion forming a first reflector and a bottom portion forming a semiconductor light emitting element area, and the other cup portion is The side part that forms the second reflector and the bottom part that forms the wire bond area are integrally molded,
A package for a semiconductor light emitting device, wherein a locking portion for preventing the cup portion from being detached is provided in the resin portion between both cup portions. カップ部が開口縁にパッケージ主面に沿って広がるフランジ部を有することを特徴とする請求項１に記載の半導体発光装置用パッケージ。   The package for a semiconductor light-emitting device according to claim 1, wherein the cup portion has a flange portion extending along the package main surface at the opening edge. 請求項１〜２の何れか１項に記載の半導体発光装置用パッケージの収容部に半導体発光素子および封止樹脂を収容したことを特徴とする半導体発光装置。 A semiconductor light emitting device comprising: a semiconductor light emitting element and a sealing resin accommodated in the housing portion of the package for a semiconductor light emitting device according to claim 1 .
JP2007167039A 2007-06-26 2007-06-26 Semiconductor light emitting device package and semiconductor light emitting device Expired - Fee Related JP5207671B2 (en)

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