JP2008016744A - Package for semiconductor light emitting device, and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a package for a semiconductor light emitting device capable of attaining high luminance and downsizing of the semiconductor light emitting device, by improving the heat dissipation performance of heat produced from a semiconductor light emitting element. <P>SOLUTION: An integrally formed part 1A formed by consecutively integrally forming a first reflector 1a and a semiconductor light emitting element area 1d, and an integrally formed part 1B formed by consecutively integrally forming a wire bond area 1e and a second reflector 1b, are provided on a metallic lead frame 1 opposite to each other; and insulation tapes 2 for covering outer side faces of both the integrally formed parts 1A, 1B are provided to be an outer wall, to improve the heat dissipation performance and downsize a containing part 6. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a package for a semiconductor light-emitting device and a method for manufacturing the same, and relates to an improvement in the brightness of a semiconductor light-emitting element in a semiconductor light-emitting device used as various light sources such as a liquid crystal display backlight and illumination of a portable electronic device. This relates to the downsizing of the package.

  In recent years, a semiconductor light emitting device with high brightness and high output has been developed as a white semiconductor light emitting device including a nitrogen gallium compound semiconductor light emitting element. This semiconductor light emitting device is widely used as a backlight for liquid crystal display parts of portable electronic devices and various light sources for illumination, and further expansion of applications is expected in the future.

Under such circumstances, a package for a semiconductor light-emitting device that houses a semiconductor light-emitting element is required to efficiently irradiate light from the semiconductor light-emitting element and to be miniaturized.
Semiconductor light-emitting devices are required to have higher reliability and higher brightness than ever as their applications expand. For example, when used as light-emitting devices for vehicles and aircraft, High reliability and high brightness that can withstand the use of the

  In order to obtain this high luminance, it is necessary to flow a large current through the semiconductor light emitting element, and the temperature of the semiconductor light emitting element is rapidly increased by flowing such a large current. Due to this temperature rise, the luminance of the semiconductor light emitting device is degraded. In particular, since the resin material of the semiconductor light emitting device has a low thermal conductivity and a small heat dissipation effect, it has not been possible to sufficiently dissipate the heat that increases with the increase in brightness and suppress the temperature rise.

  As a conventional semiconductor light-emitting device that responds to the demand for heat dissipation accompanying the increase in luminance, for example, as described in Patent Document 1, a reflector is provided, and a semiconductor light-emitting element is mounted on a surface extending from the reflector. There were some things that aimed to improve heat dissipation.

  FIG. 4 shows a conventional semiconductor light emitting device package described in Patent Document 1, wherein 100 is a semiconductor light emitting device package, 110 is a metal lead frame, 110a is a reflector, 110b is an external connection lead, and 110c. Is a semiconductor light emitting element area, 110d is a wire bond area, 112 is a receiving portion, 113 is a resin material, 114 is a semiconductor light emitting element, 115 is a wire, and 116 is a sealing resin.

  In FIG. 4, the semiconductor light emitting device accommodates the semiconductor light emitting element 114 and the wire 115 that is electrically connected to the semiconductor light emitting element 114 and energizes the accommodating part 112 of the package 100 for the semiconductor light emitting device, and fills the accommodating part 112. The semiconductor light emitting element 114 and the wire 115 are sealed with a light transmissive sealing resin 116.

  The semiconductor light emitting device package 100 is provided with a reflector 110a that reflects light emitted from the semiconductor light emitting element 114 in the housing portion 112 to improve the reflectance, and covers the outer periphery of the housing portion 112 with a molding machine. A resin material 113 is provided.

The reflector 110a is formed by cutting and bending a part of the metal lead frame 110. The reflector 110a is continuous with the metal lead frame 110 to improve the heat dissipation of heat generated from the semiconductor light emitting element 114.
JP 2003-152228 A

  However, since the semiconductor light emitting device package 100 having the conventional configuration forms the reflector 110a by cutting and bending a part of the metal lead frame 110, in order to ensure the strength of the reflector 110a, the housing 112 is provided. It was necessary to cover the outer periphery with the resin material 113. Since the heat conductivity of the resin material 113 in contact with the reflector 110a is low, heat dissipation by the reflector 110a is inhibited as a result, and efficient heat dissipation cannot be realized. Therefore, there is a problem that the luminance deterioration of the semiconductor light emitting device 114 due to the temperature rise cannot be sufficiently suppressed.

  In addition, since the semiconductor light emitting device package 100 forms the reflector 110a by cutting and bending a part of the metal lead frame 110, the resin material 113 is further formed on the outer surface of the housing portion 112. Therefore, the reflector 110a and the resin material are formed. The thickness overlapped with 113 is the wall thickness of the package body. For this reason, there has been a problem that the wall thickness of the package body is increased and the package size of the package 100 for the semiconductor light emitting device is increased.

  Further, when the semiconductor light emitting device package 100 is miniaturized, the thickness of the reflector 110 a is uniquely determined by the thickness of the metal lead frame 110 and cannot be changed. For this reason, in order to reduce the size of the package body, the wall thickness of the resin material 113 must be reduced. However, if the wall thickness of the resin material 113 is reduced, unfilled portions of the resin material 113 are generated around the reflector 110a. It was.

  Since the unfilled portion of the resin material 113 causes deterioration of the quality of the semiconductor light emitting device, it is difficult to reduce the size of the package 100 for the semiconductor light emitting device by reducing the wall thickness of the resin material 113. The downsizing of the package has an adverse effect on the quality and production cost, and the downsized semiconductor light emitting device package 100 cannot be efficiently produced in large quantities.

  SUMMARY OF THE INVENTION The present invention solves the above-described problems, sufficiently enhances a heat radiation function for dissipating heat emitted from a semiconductor light emitting element, can suppress deterioration in luminance of the semiconductor light emitting element, and a semiconductor light emitting device An object of the present invention is to provide a package for a semiconductor light emitting device that can further reduce the size of the semiconductor device and a method for manufacturing the same.

  In order to solve the above problems, a package for a semiconductor light-emitting device according to the present invention is a package for a semiconductor light-emitting device provided with a housing portion that accommodates a semiconductor light-emitting element and a sealing resin, and is mutually connected via a predetermined gap. A metal lead frame having a plurality of metal pieces opposed to each other, and an insulating material that integrates one side of each metal piece opposed to each other, and the accommodating portion is provided on one side of each metal piece. An integrally formed portion is provided.

  In addition, the integrally molded portion of one metal piece portion is formed by continuously and integrally forming the first reflector and the semiconductor light emitting element area, and the integrally molded portion of the other metal piece portion is the second reflector and the wire bond area. Is an insulating material comprising an insulating tape that is bonded between the second main surfaces of both metal pieces, with the first main surface of each integrally formed portion facing the storage space of the storage portion. The gap between the metal piece portions is closed, and the other side portion of each metal piece portion is bent to the second main surface side to form an external connection lead.

The insulating material has a heat resistant temperature of 230 ° C. or higher.
The semiconductor light emitting device of the present invention is characterized in that the semiconductor light emitting element and the sealing resin are accommodated in the accommodating portion of any of the packages for the semiconductor light emitting device described above.

  The method for manufacturing a package for a semiconductor light emitting device of the present invention includes a pressing step, a drawing step, and a taping step. In the pressing step, the lead frame metal material is punched by pressing and opposed to each other through a predetermined gap. Forming a metal lead frame having a semiconductor light emitting element area processing portion, a wire bond area processing portion, and each support portion; in the drawing step, the semiconductor light emitting element area processing portion and the wire bond area processing portion are subjected to drawing; The semiconductor light emitting element area processing part is provided with an integrated molding part formed by continuously and integrally forming the semiconductor light emitting element area and the first reflector, and the wire bond area and the second reflector are continuously integrated into the wire bond area processing part. An integral molding part formed by molding is provided, and the semiconductor light emitting element and the sealing resin are collected in both integral molding parts. In the taping step, the insulating tape is pasted between the outer surfaces of the two integrally formed portions to close the gap between the two integrally formed portions, and the semiconductor light emitting element area and the A wire bond area is integrated, and the first reflector and the second reflector are integrated.

  As described above, according to the semiconductor light emitting device package of the present invention, the first reflector and the semiconductor light emitting element area are continuously and integrally formed on one metal piece facing each other with a predetermined gap therebetween. By providing an integrally molded part and providing an integrally molded part formed by continuously and integrally molding the second reflector and the wire bond area on the other metal piece part, the reflector itself can secure sufficient strength.

  Therefore, the insulating material made of insulating tape that is pasted between the two integrally molded parts to form the outer wall of the housing part is not required to have strength as the outer wall, and can be made thinner, compared to the resin material. The degree of influence on the heat dissipation effect of the reflector is reduced. Therefore, excellent heat dissipation can be realized in the reflector of the package for the semiconductor light-emitting device, and a high-luminance semiconductor light-emitting device can be manufactured.

  In addition, the outer wall made of insulating tape does not generate unfilled places like a resin material, and does not cause adverse effects of thinning, so it is possible to efficiently produce large-sized packages for semiconductor light emitting devices, By reducing the size of the package for the semiconductor light emitting device, a smaller and higher luminance semiconductor light emitting device can be realized.

Embodiments of the present invention will be described below with reference to the drawings.
Embodiment 1
1A is a perspective view of a package for a semiconductor light emitting device according to Embodiment 1 of the present invention, and FIG. 1B is a cross-sectional view schematically illustrating a semiconductor light emitting device using the package for a semiconductor light emitting device. It is.

  1A and 1B, 1 is a metal lead frame, 1a is a first reflector, 1b is a second reflector, 1c is an external connection lead, 1d is a semiconductor light emitting element area, and 1e is a wire bond area. 1f is an external connection surface, 2 is an outer wall of an insulating tape, 3 is a semiconductor light emitting element, 4 is a wire, 5 is a sealing resin, 6 is a housing portion, 10 is a package for a semiconductor light emitting device, and 11 is a semiconductor light emitting device. Show.

  A housing portion 6 for housing a semiconductor light emitting element and a sealing resin is provided, and a pair of integrally molded portions 1A and 1B formed on the metal lead frame 1 face each other with a predetermined gap therebetween, and both of them are integrated. The forming part 1A, 1B constitutes the accommodating part 6, and the first main surface (inner surface) side of the integrally molded part 1A, 1B (metal lead frame 1) faces the accommodating space of the accommodating part 6.

  One integrated molding portion 1A of the metal lead frame 1 is formed by continuously and integrally forming the first reflector 1a and the semiconductor light emitting element area 1d, and the other integral molding portion 1B is formed by wire bonding with the second reflector 1b. The area 1e is formed integrally and continuously.

  Between the second main surfaces (outer surfaces) of both the integrally formed portions 1A and 1B, an insulating tape 2 that forms an insulating material is closely attached and pasted. The insulating tape 2 closes the gap between the integrally molded portions 1A and 1B to form an outer wall, and integrates the semiconductor light emitting element area 1d and the wire bond area 1e, and the first reflector 1a and the second reflector 1b. Are integrated.

  The other side portion of the metal lead frame 1 that is continuous with each integrally formed portion 1A, 1B is bent into a J shape toward the second main surface side, and the end portion forms the external connection lead 1c, and the external connection lead 1c is the second side. An external connection surface 1f is provided on the main surface side. That is, the package 10 for a semiconductor light emitting device is a so-called top in which the housing portion 6 opens in a direction perpendicular to the mounting surface in a state where the mounting surface of the mounting substrate (not shown) is aligned with the external connection surface 1f. Of view type.

  The above-mentioned insulating tape 2 on the outer wall is preferably an adhesive tape having a heat resistant temperature of 230 ° C. or higher in consideration of solder heat resistance when mounted on a mounting board, and the material is polyester, epoxy, polyimide, PTFE, meta Aramids, acetates and the like are conceivable. The material of the metal lead frame 1 is preferably copper or an alloy containing copper having excellent thermal conductivity.

  As shown in FIG. 1B, the semiconductor light emitting device 11 has a semiconductor light emitting device in which the semiconductor light emitting device 3 is bonded to the semiconductor light emitting device area 1d of the housing portion 6 of the semiconductor light emitting device package 10 and the wire 4 is wire bonded. The element 3 and the wire bond area 1 e are electrically connected, and the housing portion 6 including the semiconductor light emitting element 3 and the wire 4 is filled with a light-transmitting sealing resin 5.

  According to the above configuration, in the semiconductor light emitting device package 10, the one integrally molded portion 1 </ b> A facing each other with a predetermined gap is formed by integrally forming the first reflector 1 a and the semiconductor light emitting element area 1 d. Thus, the other integral molding portion 1B is formed by continuously and integrally molding the second reflector 1b and the wire bond area 1e, so that the reflectors 1a and 1b can secure sufficient strength by themselves.

  For this reason, the strength as the outer wall is not required for the insulating tape 2, and it is possible to reduce the thickness, and the degree of influence on the heat radiation action of the reflectors 1a and 1b is lower than that of the resin material. Therefore, excellent heat dissipation can be realized in the reflectors 1a and 1b of the package 10 for a semiconductor light emitting device, and a high luminance semiconductor light emitting device can be manufactured. Further, by adopting the insulating tape 2 on the outer wall, an unfilled portion does not occur unlike the resin material, and the adverse effect of thinning the outer wall as in the conventional case does not occur. Can be produced efficiently and in large quantities, and by reducing the size of the semiconductor light emitting device package 10, it is possible to realize a semiconductor light emitting device 11 that is smaller and has higher brightness.

  In the first embodiment, the description has been given of the case in which the pair of integrally molded portions 1A and 1B of the metal lead frame 1 constitutes one accommodating portion 6. However, the number of integrally molded portions and the accommodating portions 6 is limited to this. Is not to be done.

  Based on FIG. 2, the manufacturing method of the package 10 for semiconductor light-emitting devices is demonstrated. The package 10 for a semiconductor light emitting device shown in FIG. 2 is different in shape from that shown in FIG. 1, but there is no difference in the basic structure.

  2A to 2D, 1 is a metal lead frame, 1a is a first reflector, 1b is a second reflector, 1d is a semiconductor light emitting element area, 1e is a wire bond area, and 1g is a semiconductor light emitting element area. Processing part, 1h is a wire bond area processing part, 1i, 1j are support parts (lead parts), 7 is a continuous insulating tape before cutting, 7a is a notch part, 7b is a tape cutting part, 8 is a lead frame Each metal material is shown.

  As shown in FIG. 2A, the metal lead frame 1 is formed by a pressing process. That is, the lead frame metal material 8 is punched by press working to form the semiconductor light emitting element area processed portion 1g, the wire bond area processed portion 1h, and the support portions 1i, 1j facing each other.

  Next, as shown in FIG. 2B, in the drawing process, the semiconductor light emitting element area processing portion 1g and the wire bond area processing portion 1h are drawn. Then, the semiconductor light emitting element area 1d and the first reflector 1a are continuously and integrally formed in the semiconductor light emitting element area processed portion 1g to provide an integrally formed portion 1A, and the wire bond area processed portion 1h and the wire bond area 1e and the second are formed. The reflector 1b is continuously and integrally molded to provide an integrally molded portion 1B.

  2C shows the semiconductor light emitting element area 1d and the wire bond area 1e of the metal lead frame 1 in FIG. 2B, the first reflector 1a and the second reflector 1b extending from them, and the first It is a perspective view which shows the support parts 1i and 1j extended in the mutually opposite direction from the reflector 1a and the 2nd reflector 1b, and comprises the accommodating part 6 which accommodates a semiconductor light-emitting device and sealing resin by both integral molding part 1A, 1B. is doing.

  As shown in FIG. 2 (d), in the taping step after the drawing step, the insulating tape 7 is pasted between the outer side surfaces (second main surfaces) of the two integrally formed portions 1A and 1B, and both the integrally formed portions are formed. The gap between 1A and 1B is closed.

  Here, a case where the metal lead frame 1 has a continuous and repeated shape, that is, a case where a plurality of patterns including the integrally formed portions 1A and 1B and the support portions 1i and 1j are continuous, is shown. Shown as long combined.

  The insulating tape 7 is affixed collectively to all the second main surfaces of the plurality of wire bond areas 1e and the semiconductor light emitting element area 1d. The insulating tape 7 is provided with a notch portion 7a in advance, and the insulating tape 7 is cut with a tape cutting portion 7b corresponding to this portion. And the insulating tape 7 is affixed on the outer surface of the 1st reflector 1a and the 2nd reflector 1b, and while integrating the semiconductor light-emitting element area 1d and the wire bond area 1e with the insulating tape 7, it is the 1st reflector 1a. And the second reflector 1b are integrated.

Thereafter, the metal lead frames 1 are individually separated to form a package 10 for a semiconductor light emitting device as shown in FIG.
Embodiment 2
FIG. 3A is a perspective view showing a package for a semiconductor light emitting device in Embodiment 2 of the present invention, and FIG. 3B is a top view of the package for the semiconductor light emitting device. 3, the same components as those in FIG. 1 are denoted by the same reference numerals, and description thereof is omitted.

  In FIG. 3, the semiconductor light emitting device package 12 is such that the other side portion of the metal lead frame 1 continuous to each integrally formed portion 1 </ b> A, 1 </ b> B is once bent to the second main surface side and further parallel to the side surface of the housing portion 6. The end portion bent so as to form an external connection lead 1c, and the external connection lead 1c has an external connection surface 1f parallel to the side surface of the housing portion 6.

  In other words, the semiconductor light emitting device package 12 is a so-called side in which the housing portion 6 opens in a direction parallel to the mounting surface in a state where the mounting surface of the mounting substrate (not shown) is aligned with the external connection surface 1f. Of view type.

  Then, as shown in FIG. 3B, the semiconductor light emitting device package 12 has a shape in which a dimensional restriction is imposed on the housing portion 6 in the direction of the package width A. That is, between the insulating tapes 2 on both sides forming the outer wall of the housing portion 6 having the package width A, the semiconductor light emitting element area 1d and the wire bond area 1e, the first reflector 1a, and the second reflector 1b are included. The external connection surface 1f is included. For this reason, by appropriately setting the package width A, it can be mounted within the limited dimensions on the mounting surface of the mounting substrate (not shown). For example, a liquid crystal display backlight of a portable electronic device, illumination, etc. This is suitable as a package of a semiconductor light emitting device used as various light sources.

  The present invention is useful as a package for a semiconductor light-emitting device, and is particularly suitable for a package for a semiconductor light-emitting device that is required to be miniaturized with high brightness.

(A) is a perspective view which shows the package for semiconductor light-emitting devices in Embodiment 1 of this invention, (b) is sectional drawing of a semiconductor light-emitting device. Explanatory drawing which shows the main manufacturing processes of the package for semiconductor light-emitting devices of this invention. (A) is a perspective view which shows the package for semiconductor light-emitting devices in Embodiment 2 of this invention, (b) is a top view which shows the package for semiconductor light-emitting devices Sectional drawing which shows the package for conventional semiconductor light-emitting devices

Explanation of symbols

A Package width 1 Metal lead frame 1A, 1B Integrated molding part 1a 1st reflector 1b 2nd reflector 1c External connection lead 1d Semiconductor light emitting element area 1e Wire bond area 1f External connection surface 1g Semiconductor light emitting element area processing part 1h Wire Bond area processing part 1i, 1j Support part (lead part)
2 Insulation tape (outer wall)
DESCRIPTION OF SYMBOLS 3 Semiconductor light emitting element 4 Wire 5 Sealing resin 6 Accommodating part 7 Insulating tape 7a Notch part 7b Tape cut part 8 Lead frame metal material 10, 12 Package for semiconductor light emitting device 11 Semiconductor light emitting device 100 Package for semiconductor light emitting device 110 Metal lead Frame 110a Reflector 112 Housing part 113 Resin material 114 Semiconductor light emitting element 115 Wire 116 Sealing resin

Claims (5)

A package for a semiconductor light emitting device provided with a housing portion for housing a semiconductor light emitting element and a sealing resin, wherein the metal lead frame has a plurality of metal pieces facing each other with a predetermined gap therebetween, and A package for a semiconductor light-emitting device, comprising an insulating material that integrates one side portions that face each other, and an integrally molded portion that forms the housing portion on one side portion of each metal piece portion. The integrally molded part of one metal piece is formed by continuously forming the first reflector and the semiconductor light emitting element area, and the integrally formed part of the other metal piece is continuously formed by the second reflector and the wire bond area. Metal pieces made of an insulating material made of an insulating tape formed by integral molding, with the first main surface of each integrally formed portion facing the housing space of the housing portion, and pasted between the second main surfaces of both metal piece portions 2. The package for a semiconductor light emitting device according to claim 1, wherein the gap between the portions is closed, and the other side portion of each metal piece portion is bent toward the second main surface side to form an external connection lead. The semiconductor light emitting device package according to claim 1, wherein the insulating material has a heat resistant temperature of 230 ° C. or more. 4. A semiconductor light emitting device, wherein a semiconductor light emitting element and a sealing resin are accommodated in an accommodating portion of the package for a semiconductor light emitting device according to claim 1. Including a pressing process, a drawing process and a taping process,
In the pressing step, a lead frame metal material is punched by pressing, and a metal lead frame having a semiconductor light emitting element area processing portion, a wire bond area processing portion, and respective support portions facing each other through a predetermined gap is formed,
In the drawing step, the semiconductor light emitting element area processing portion and the wire bond area processing portion are subjected to drawing processing, and the semiconductor light emitting element area processing portion is formed integrally with the semiconductor light emitting element area and the first reflector. An integral molding part is provided, and an integrated molding part is formed by continuously molding the wire bond area and the second reflector in the wire bond area processing part, and the semiconductor light emitting element and the sealing resin are formed in both integral molding parts. Constituting the accommodating part to accommodate,
In the taping process, the insulating tape is pasted between the outer surfaces of the two integrally molded parts to close the gap between the two integrally molded parts, and the semiconductor light emitting element area and the wire bond area are integrated with the insulating tape. And manufacturing the package for a semiconductor light emitting device, wherein the first reflector and the second reflector are integrated.

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