JP5202151B2 - パッド下側esd及びパッド下側アクティブボンディング用ボンドパッドスタック - Google Patents
パッド下側esd及びパッド下側アクティブボンディング用ボンドパッドスタック Download PDFInfo
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- JP5202151B2 JP5202151B2 JP2008186372A JP2008186372A JP5202151B2 JP 5202151 B2 JP5202151 B2 JP 5202151B2 JP 2008186372 A JP2008186372 A JP 2008186372A JP 2008186372 A JP2008186372 A JP 2008186372A JP 5202151 B2 JP5202151 B2 JP 5202151B2
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- 238000002161 passivation Methods 0.000 claims description 36
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- 239000003989 dielectric material Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000010949 copper Substances 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 229910052802 copper Inorganic materials 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 239000010931 gold Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 208000029523 Interstitial Lung disease Diseases 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
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Description
302 誘電体物質
304 第二部分
306 第一パッシベーション層
308 上側表面区域
310 導電性ボンドパッド層
312 第二パッシベーション層
314 上側ボンドパッド表面区域
Claims (8)
- 集積回路用のボンドパッドスタック構造であって、
それらの間に形成された誘電体物質を有する1個又はそれ以上の下側導電層であって、各下側導電層が第1の幅以下の幅を有する、下側導電層と、
前記1個又はそれ以上の下側導電層の上に形成された上部導電層であって、当該上部導電層と前記1個又はそれ以上の下側導電層との間に形成された誘電体物質を有し、当該上部導電層が前記1個又はそれ以上の下側導電層の上に形成された第1の部分と前記1個又はそれ以上の下側導電層の第1の幅を超えて延在する第2の部分とを含むように、第1の幅より大きい第2の幅を有する、上部導電層と、
前記上部導電層の上に形成されており、前記上部導電層の第2の部分の上側表面区域を露出させるためにそれを貫通して形成された開口を有する第1のパッシベーション層と、
前記第1のパッシベーション層の上に形成された導電性ボンドパッド層であって、当該ボンドパッド層が前記上部導電層の第1の部分の上に形成された第1の部分と前記第1のパッシベーション層内の前記開口を介して延在して前記上部導電層と電気的に接触する第2の部分とを含む、導電性ボンドパッド層と、
前記導電性ボンドパッド層の上に形成されており、前記導電層ボンドパッド層の第1の部分のボンドパッド表面区域を露出させるためにそれを貫通して形成された開口を有する第2のパッシベーション層と、
を含み、
前記誘電体物質が堆積されたシリコン酸化物を含み、
前記下側導電層の幅が前記第2のパッシベーション層内の開口の幅よりも大きい、
構造。 - 請求項1に記載の構造であって、前記第1のパッシベーション層が窒化シリコンを含む、構造。
- 請求項1又は2に記載の構造であって、前記ボンドパッド層がアルミニウムを含む、構造。
- 請求項1乃至3の何れかに記載の構造であって、前記第2のパッシベーション層が窒化シリコンを含む、構造。
- 請求項1乃至3の何れかに記載の構造であって、前記第2のパッシベーション層がベンゾシクロブテン(BCB)を基礎としたポリマー誘電体を含む、構造。
- ボンドパッドスタック構造の製造方法であって、
それらの間に形成された誘電体物質を有する1個又はそれ以上の下側導電層を形成し、このような各下側導電層が第1の幅以下の幅を有し、
上部導電層と前記下側導電層とがそれらの間に形成された誘電体物質を有するように、前記1個又はそれ以上の下側導電層の上に上部導電層を形成し、前記上部導電層が前記1個又はそれ以上の下側導電層の上に形成された第1の部分と前記1個又はそれ以上の下側導電層の第1の幅を超えて延在する第2の部分とを含むように、前記上部導電層が上記第1の幅よりも大きい第2の幅を有し、
前記上部導電層の第2の部分の上側表面区域を露出させるために第1のパッシベーション層がそれを貫通して形成された開口を有するように、前記上部導電層の上に第1のパッシベーション膜を形成し、
導電性ボンドパッド層が前記上部導電層の第1の部分の上に形成された第1の部分と前記第1のパッシベーション層内の前記開口を介して延在して前記上部導電層と電気的に接触する第2の部分とを含むように、前記第1のパッシベーション層の上に導電性ボンドパッド層を形成し、
前記導電性ボンドパッド層の上に第2のパッシベーション層を形成し、前記導電性ボンドパッド層の第1の部分の上側ボンドパッド表面区域を露出させるために前記第2のパッシベーション層がそれを貫通して形成された開口を有し、
前記下側導電層の幅が前記第2のパッシベーション層内の開口の幅よりも大きい、
方法。 - 請求項6に記載の方法であって、前記誘電体物質がシリコン酸化物を含む、方法。
- 請求項6又は7に記載の方法であって、前記第1のパッシベーション層が窒化シリコンを含む、方法。
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US96160907P | 2007-07-23 | 2007-07-23 | |
US60/961,609 | 2007-07-23 | ||
US11/895,779 US7652379B2 (en) | 2007-07-23 | 2007-08-27 | Bond pad stacks for ESD under pad and active under pad bonding |
US11/895,779 | 2007-08-27 |
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JP5202151B2 true JP5202151B2 (ja) | 2013-06-05 |
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JP (1) | JP5202151B2 (ja) |
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US7608538B2 (en) * | 2007-01-05 | 2009-10-27 | International Business Machines Corporation | Formation of vertical devices by electroplating |
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JP5607994B2 (ja) * | 2010-06-15 | 2014-10-15 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置およびその製造方法 |
EP2503594A1 (en) | 2011-03-21 | 2012-09-26 | Dialog Semiconductor GmbH | Signal routing optimized IC package ball/pad layout |
US9773732B2 (en) * | 2013-03-06 | 2017-09-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for packaging pad structure |
US9620460B2 (en) | 2014-07-02 | 2017-04-11 | Samsung Electronics Co., Ltd. | Semiconductor chip, semiconductor package and fabricating method thereof |
KR102161736B1 (ko) | 2014-08-13 | 2020-10-05 | 삼성전자주식회사 | 시스템 온 칩, 시스템 온 칩을 포함하는 전자 장치 및 시스템 온 칩의 설계 방법 |
KR102249172B1 (ko) | 2014-09-19 | 2021-05-11 | 삼성전자주식회사 | 불 휘발성 메모리 장치 |
KR102212558B1 (ko) * | 2014-12-22 | 2021-02-08 | 삼성전자주식회사 | 자기 메모리 소자의 제조 방법 |
FR3050318B1 (fr) * | 2016-04-19 | 2018-05-11 | Stmicroelectronics (Rousset) Sas | Nouvelle protection contre le claquage premature de dielectriques poreux interlignes au sein d'un circuit integre |
JP6649189B2 (ja) * | 2016-06-27 | 2020-02-19 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US10515874B2 (en) * | 2017-11-30 | 2019-12-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method of manufacture |
US10483174B1 (en) * | 2018-06-25 | 2019-11-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated circuit component and package structure having the same |
US11508683B2 (en) * | 2019-06-17 | 2022-11-22 | Western Digital Technologies, Inc. | Semiconductor device with die bumps aligned with substrate balls |
KR102558816B1 (ko) | 2020-01-07 | 2023-07-21 | 양쯔 메모리 테크놀로지스 씨오., 엘티디. | 금속-유전체 결합 방법 및 구조 |
JP2020061580A (ja) * | 2020-01-16 | 2020-04-16 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
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US6803302B2 (en) * | 1999-11-22 | 2004-10-12 | Freescale Semiconductor, Inc. | Method for forming a semiconductor device having a mechanically robust pad interface |
JP2000208520A (ja) * | 2000-01-01 | 2000-07-28 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
JP4594599B2 (ja) * | 2003-03-31 | 2010-12-08 | セイコーエプソン株式会社 | 半導体集積回路 |
JP2005085939A (ja) * | 2003-09-08 | 2005-03-31 | Renesas Technology Corp | 半導体装置およびその製造方法 |
US7056820B2 (en) * | 2003-11-20 | 2006-06-06 | International Business Machines Corporation | Bond pad |
US7242102B2 (en) * | 2004-07-08 | 2007-07-10 | Spansion Llc | Bond pad structure for copper metallization having increased reliability and method for fabricating same |
JP4422004B2 (ja) * | 2004-12-02 | 2010-02-24 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置 |
JP2007087975A (ja) * | 2005-09-16 | 2007-04-05 | Ricoh Co Ltd | 半導体装置 |
JP4675231B2 (ja) * | 2005-12-28 | 2011-04-20 | パナソニック株式会社 | 半導体集積回路装置 |
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