JP5197565B2 - 酸化物シースを有する金属ナノワイヤ、及びその製造方法 - Google Patents

酸化物シースを有する金属ナノワイヤ、及びその製造方法 Download PDF

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JP5197565B2
JP5197565B2 JP2009500778A JP2009500778A JP5197565B2 JP 5197565 B2 JP5197565 B2 JP 5197565B2 JP 2009500778 A JP2009500778 A JP 2009500778A JP 2009500778 A JP2009500778 A JP 2009500778A JP 5197565 B2 JP5197565 B2 JP 5197565B2
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metal
composite structure
dimensional composite
structure according
substrate
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JP2009533547A (ja
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ミハエル ファイス
クリスチャン ペターゼン
エバ アヴァ ソウ
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ライプニッツ−インスティトゥート フィア ノイエ マテリアーリエン ゲマインニュッツィゲ ゲゼルシャフト ミット ベシュレンクタ ハフトゥンク
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    • D—TEXTILES; PAPER
    • D01—NATURAL OR MAN-MADE THREADS OR FIBRES; SPINNING
    • D01F—CHEMICAL FEATURES IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES OR RIBBONS; APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OF CARBON FILAMENTS
    • D01F9/00—Artificial filaments or the like of other substances; Manufacture thereof; Apparatus specially adapted for the manufacture of carbon filaments
    • D01F9/08—Artificial filaments or the like of other substances; Manufacture thereof; Apparatus specially adapted for the manufacture of carbon filaments of inorganic material
    • D01F9/10—Artificial filaments or the like of other substances; Manufacture thereof; Apparatus specially adapted for the manufacture of carbon filaments of inorganic material by decomposition of organic substances
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • B22F1/054—Nanosized particles
    • B22F1/0547—Nanofibres or nanotubes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • B22F1/054—Nanosized particles
    • B22F1/0553—Complex form nanoparticles, e.g. prism, pyramid, octahedron
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/16—Metallic particles coated with a non-metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00—Making metallic powder or suspensions thereof
    • B22F9/16—Making metallic powder or suspensions thereof using chemical processes
    • B22F9/30—Making metallic powder or suspensions thereof using chemical processes with decomposition of metal compounds, e.g. by pyrolysis
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C23C16/20—Deposition of aluminium only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/403—Oxides of aluminium, magnesium or beryllium
    • D—TEXTILES; PAPER
    • D01—NATURAL OR MAN-MADE THREADS OR FIBRES; SPINNING
    • D01F—CHEMICAL FEATURES IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES OR RIBBONS; APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OF CARBON FILAMENTS
    • D01F8/00—Conjugated, i.e. bi- or multicomponent, artificial filaments or the like; Manufacture thereof
    • D01F8/18—Conjugated, i.e. bi- or multicomponent, artificial filaments or the like; Manufacture thereof from other substances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/89—Deposition of materials, e.g. coating, cvd, or ald
    • Y10S977/891—Vapor phase deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249924—Noninterengaged fiber-containing paper-free web or sheet which is not of specified porosity
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2913—Rod, strand, filament or fiber
    • Y10T428/2933—Coated or with bond, impregnation or core
JP2009500778A 2006-03-23 2007-03-22 酸化物シースを有する金属ナノワイヤ、及びその製造方法 Expired - Fee Related JP5197565B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE200610013484 DE102006013484A1 (de) 2006-03-23 2006-03-23 Metallische Nanodrähte mit einer Hülle aus Oxid und Herstellungsverfahren derselben
DE102006013484.2 2006-03-23
PCT/EP2007/002564 WO2008011920A1 (de) 2006-03-23 2007-03-22 Metallische nanodrähte mit einer hülle aus oxid und herstellungsverfahren derselben

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JP2009533547A JP2009533547A (ja) 2009-09-17
JP5197565B2 true JP5197565B2 (ja) 2013-05-15

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US (1) US8197889B2 (de)
EP (1) EP1996753B1 (de)
JP (1) JP5197565B2 (de)
DE (1) DE102006013484A1 (de)
WO (1) WO2008011920A1 (de)

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DE102007053023A1 (de) 2007-11-05 2009-05-07 Leibniz-Institut Für Neue Materialien Gemeinnützige Gmbh Oxidverbindungen als Beschichtungszusammensetzung
DE102007054691A1 (de) 2007-11-14 2009-05-20 Leibniz-Institut Für Neue Materialien Gemeinnützige Gmbh Verwendung von nanostrukturierten Oberflächen und Verfahren zum Anreichern oder Isolieren von zellulären Subpopulationen
JP5272225B2 (ja) * 2009-03-31 2013-08-28 石原薬品株式会社 低融点金属粉末およびその製造方法
DE102009035795A1 (de) 2009-07-31 2011-02-03 Leibniz-Institut Für Neue Materialien Gemeinnützige Gmbh Struktuierte Oberflächen für Implantate
DE102010021691A1 (de) 2010-05-27 2011-12-01 Leibniz-Institut Für Neue Materialien Gemeinnützige Gmbh Schichtverbund mit einer eindimensionalen Kompositstruktur
DE102010027063A1 (de) 2010-07-13 2012-01-19 Leibniz-Institut Für Neue Materialien Gemeinnützige Gmbh Beschichtung zur Umwandlung von Strahlungsenergie
DE102010032747B4 (de) 2010-07-29 2014-07-17 Deutsches Zentrum für Luft- und Raumfahrt e.V. Verfahren zur solaren Herstellung von Nanodrähten mit einem Katalysator
DE102010062006A1 (de) 2010-11-26 2012-05-31 Robert Bosch Gmbh Nanofasern umfassendes Anodenmaterial für eine Lithiumionenzelle
DK2948757T3 (en) 2013-01-25 2017-06-06 Hewlett Packard Development Co Lp CHEMICAL DETECTION DEVICE
DE102017113758A1 (de) 2017-06-21 2018-12-27 Universität des Saarlandes Beschichtung oder mit einer Beschichtung versehener Körper sowie Verfahren zu deren Herstellung
US11555473B2 (en) 2018-05-29 2023-01-17 Kontak LLC Dual bladder fuel tank
US11638331B2 (en) 2018-05-29 2023-04-25 Kontak LLC Multi-frequency controllers for inductive heating and associated systems and methods
CN112718430B (zh) * 2020-12-22 2022-07-12 哈尔滨工程大学 船用铝合金表面纳米级梯度壳结构疏水涂层的制备方法

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* Cited by examiner, † Cited by third party
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DE4221659C2 (de) 1992-07-02 2001-08-09 Michael Veith Flüchtige, metallorganische Alkoxide und ihre Verwendung zur Herstellung von Mikrokompositen aus Keramik und Metall
DE19529241A1 (de) 1995-08-09 1997-02-13 Basf Ag Aluminiumalkoxyhydride
DE10032303A1 (de) * 2000-07-04 2002-01-17 Basf Ag Metallischse Hydrierkatalysatoren
EP1421026B1 (de) * 2001-07-20 2009-12-16 President And Fellows of Harvard College Übergangsmetalloxid-nanodrähte und diese enthaltende vorrichtungen
JP2003209305A (ja) * 2001-11-13 2003-07-25 Hewlett Packard Co <Hp> 電界調整式双安定分子システム
CN1269598C (zh) 2003-12-12 2006-08-16 中国科学院金属研究所 一种用等离子体制备的一维金属纳米材料及其方法
JP2005268778A (ja) * 2004-03-03 2005-09-29 Hewlett-Packard Development Co Lp 新規な電界変調式双安定分子メカニカルデバイス

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Publication number Publication date
JP2009533547A (ja) 2009-09-17
US8197889B2 (en) 2012-06-12
EP1996753A1 (de) 2008-12-03
EP1996753B1 (de) 2013-09-25
WO2008011920A1 (de) 2008-01-31
DE102006013484A1 (de) 2007-09-27
US20090233349A1 (en) 2009-09-17

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