JP5197565B2 - 酸化物シースを有する金属ナノワイヤ、及びその製造方法 - Google Patents
酸化物シースを有する金属ナノワイヤ、及びその製造方法 Download PDFInfo
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- JP5197565B2 JP5197565B2 JP2009500778A JP2009500778A JP5197565B2 JP 5197565 B2 JP5197565 B2 JP 5197565B2 JP 2009500778 A JP2009500778 A JP 2009500778A JP 2009500778 A JP2009500778 A JP 2009500778A JP 5197565 B2 JP5197565 B2 JP 5197565B2
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- 229910052751 metal Inorganic materials 0.000 title claims description 45
- 239000002184 metal Substances 0.000 title claims description 45
- 239000002070 nanowire Substances 0.000 title claims description 24
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000002131 composite material Substances 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 22
- 229910044991 metal oxide Inorganic materials 0.000 claims description 20
- 150000004706 metal oxides Chemical class 0.000 claims description 20
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 15
- 239000002243 precursor Substances 0.000 claims description 15
- 229910052733 gallium Inorganic materials 0.000 claims description 10
- 239000003054 catalyst Substances 0.000 claims description 9
- 230000006698 induction Effects 0.000 claims description 9
- 150000002902 organometallic compounds Chemical class 0.000 claims description 9
- 238000000197 pyrolysis Methods 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 6
- 125000002723 alicyclic group Chemical group 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 229910052716 thallium Inorganic materials 0.000 claims description 4
- 125000001931 aliphatic group Chemical group 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- 239000013626 chemical specie Substances 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 claims description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical group [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 2
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims description 2
- 239000012811 non-conductive material Substances 0.000 claims 1
- 150000002894 organic compounds Chemical class 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 238000005979 thermal decomposition reaction Methods 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 125000000217 alkyl group Chemical group 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000356 contaminant Substances 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 150000004678 hydrides Chemical class 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- -1 2-ethylhexyl Chemical group 0.000 description 2
- XMTQQYYKAHVGBJ-UHFFFAOYSA-N 3-(3,4-DICHLOROPHENYL)-1,1-DIMETHYLUREA Chemical compound CN(C)C(=O)NC1=CC=C(Cl)C(Cl)=C1 XMTQQYYKAHVGBJ-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 2
- 238000003917 TEM image Methods 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000005293 duran Substances 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- 125000005073 adamantyl group Chemical group C12(CC3CC(CC(C1)C3)C2)* 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 230000019552 anatomical structure morphogenesis Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000004630 atomic force microscopy Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000005524 ceramic coating Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000002114 nanocomposite Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 125000005244 neohexyl group Chemical group [H]C([H])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001971 neopentyl group Chemical group [H]C([*])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 125000002868 norbornyl group Chemical group C12(CCC(CC1)C2)* 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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- D01F9/00—Artificial filaments or the like of other substances; Manufacture thereof; Apparatus specially adapted for the manufacture of carbon filaments
- D01F9/08—Artificial filaments or the like of other substances; Manufacture thereof; Apparatus specially adapted for the manufacture of carbon filaments of inorganic material
- D01F9/10—Artificial filaments or the like of other substances; Manufacture thereof; Apparatus specially adapted for the manufacture of carbon filaments of inorganic material by decomposition of organic substances
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
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- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
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- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
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- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/16—Metallic particles coated with a non-metal
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/16—Making metallic powder or suspensions thereof using chemical processes
- B22F9/30—Making metallic powder or suspensions thereof using chemical processes with decomposition of metal compounds, e.g. by pyrolysis
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
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- B82Y40/00—Manufacture or treatment of nanostructures
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
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- C23C16/20—Deposition of aluminium only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
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- D01F8/00—Conjugated, i.e. bi- or multicomponent, artificial filaments or the like; Manufacture thereof
- D01F8/18—Conjugated, i.e. bi- or multicomponent, artificial filaments or the like; Manufacture thereof from other substances
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01L29/0669—Nanowires or nanotubes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/89—Deposition of materials, e.g. coating, cvd, or ald
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- Crystals, And After-Treatments Of Crystals (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
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Description
El(OR)H2
(式中、ElはAl、Ga、In又はTlを示し、ここではAl及びGaが好ましく、Rは脂肪族又は脂環式炭化水素基を表す)
を有する。
Claims (23)
- 金属酸化物で被覆される金属コアを含む少なくとも1つのナノワイヤを含む一次元複合構造体であって、前記コアの金属が主族IIIの金属であり、触媒又は鋳型の残渣を実質的に含まない一次元複合構造体。
- 前記金属酸化物のシースがセラミックであることを特徴とする、請求項1に記載の一次元複合構造体。
- 前記金属酸化物の金属が主族IIIの金属であることを特徴とする、請求項1又は2に記載の一次元複合構造体。
- 前記金属酸化物の前記金属、及び前記コアの前記金属が、主族IIIの同じ金属であることを特徴とする、請求項1〜3のいずれか一項に記載の一次元複合構造体。
- 前記金属がアルミニウムであり、且つ前記金属酸化物が酸化アルミニウムであることを特徴とする、請求項1〜4のいずれか一項に記載の一次元複合構造体。
- 前記金属がガリウムであり、且つ前記金属酸化物が酸化ガリウムであることを特徴とする、請求項1〜4のいずれか一項に記載の一次元複合構造体。
- 前記ナノワイヤが10〜100nmの範囲の2つの寸法(two dimensions)を有することを特徴とする、請求項1〜6のいずれか一項に記載の一次元複合構造体。
- 基体上に前記一次元複合構造体が形成されていることを特徴とする、請求項1〜7のいずれか一項に記載の一次元複合構造体。
- 電子、光学又は磁気部品又は材料用の一次元複合構造体のための、請求項1〜8のいずれか一項に記載の一次元複合構造体の使用。
- 低濃度の生物学種又は化学種を検出するためのセンサとしての、請求項1〜8のいずれか一項に記載の一次元複合構造体の使用。
- 生物学的システムにおける細胞に影響を与え且つ該細胞を制御するための、請求項1〜8のいずれか一項に記載の一次元複合構造体の使用。
- 自己清浄表面を製造するための請求項1〜8のいずれか一項に記載の一次元複合構造体の使用。
- 請求項1〜8のいずれか一項に記載の一次元複合構造体を製造する方法であって、一般式
El(OR)H2
(式中、ElはAl、Ga、In又はTlを示し、Rは脂肪族又は脂環式炭化水素基を表す)
の少なくとも1つの金属−有機化合物を400℃より高い温度の基体上で、熱分解して、複合構造体を形成する、一次元複合構造体を製造する方法。 - ElがAl又はGaであることを特徴とする、請求項13に記載の方法。
- アルミニウムtert−ブトキシジヒドリド又はガリウムtert−ブトキシジヒドリドが前記金属−有機化合物として使用されることを特徴とする、請求項13又は14に記載の方法。
- 前記熱分解が基体上において起こることを特徴とする、請求項13〜15のいずれか一項に記載の方法。
- 前記基体が半導体材料又は非導電性材料であることを特徴とする、請求項16に記載の方法。
- 前記熱分解が、誘導加熱された導電性基体、炉内に位置する表面又は誘導加熱された導電性基体ホルダ上に位置する表面において起こることを特徴とする、請求項13〜17のいずれか一項に記載の方法。
- 前記誘導加熱された導電性基体が金属であることを特徴とする、請求項18に記載の方法。
- 前記熱分解が触媒及び鋳型の非存在下で実行されることを特徴とする、請求項13〜19のいずれか一項に記載の方法。
- 前記金属−有機化合物が、ガス流中、10−6 mbar〜大気圧の圧力下、450℃〜1200℃の温度で分解されることを特徴とする、請求項13〜20のいずれか一項に記載の方法。
- −50〜120℃の前駆体供給温度で金属−有機化合物が供給されることを特徴とする、請求項13〜21のいずれか一項に記載の方法。
- 前記一次元複合構造体が前記基体から脱着されることを特徴とする、請求項13〜22のいずれか一項に記載の方法。
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DE200610013484 DE102006013484A1 (de) | 2006-03-23 | 2006-03-23 | Metallische Nanodrähte mit einer Hülle aus Oxid und Herstellungsverfahren derselben |
DE102006013484.2 | 2006-03-23 | ||
PCT/EP2007/002564 WO2008011920A1 (de) | 2006-03-23 | 2007-03-22 | Metallische nanodrähte mit einer hülle aus oxid und herstellungsverfahren derselben |
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US (1) | US8197889B2 (ja) |
EP (1) | EP1996753B1 (ja) |
JP (1) | JP5197565B2 (ja) |
DE (1) | DE102006013484A1 (ja) |
WO (1) | WO2008011920A1 (ja) |
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DE102007053023A1 (de) | 2007-11-05 | 2009-05-07 | Leibniz-Institut Für Neue Materialien Gemeinnützige Gmbh | Oxidverbindungen als Beschichtungszusammensetzung |
DE102007054691A1 (de) | 2007-11-14 | 2009-05-20 | Leibniz-Institut Für Neue Materialien Gemeinnützige Gmbh | Verwendung von nanostrukturierten Oberflächen und Verfahren zum Anreichern oder Isolieren von zellulären Subpopulationen |
JP5272225B2 (ja) * | 2009-03-31 | 2013-08-28 | 石原薬品株式会社 | 低融点金属粉末およびその製造方法 |
DE102009035795A1 (de) | 2009-07-31 | 2011-02-03 | Leibniz-Institut Für Neue Materialien Gemeinnützige Gmbh | Struktuierte Oberflächen für Implantate |
DE102010021691A1 (de) | 2010-05-27 | 2011-12-01 | Leibniz-Institut Für Neue Materialien Gemeinnützige Gmbh | Schichtverbund mit einer eindimensionalen Kompositstruktur |
DE102010027063A1 (de) | 2010-07-13 | 2012-01-19 | Leibniz-Institut Für Neue Materialien Gemeinnützige Gmbh | Beschichtung zur Umwandlung von Strahlungsenergie |
DE102010032747B4 (de) | 2010-07-29 | 2014-07-17 | Deutsches Zentrum für Luft- und Raumfahrt e.V. | Verfahren zur solaren Herstellung von Nanodrähten mit einem Katalysator |
DE102010062006A1 (de) | 2010-11-26 | 2012-05-31 | Robert Bosch Gmbh | Nanofasern umfassendes Anodenmaterial für eine Lithiumionenzelle |
DK2948757T3 (en) | 2013-01-25 | 2017-06-06 | Hewlett Packard Development Co Lp | CHEMICAL DETECTION DEVICE |
DE102017113758A1 (de) | 2017-06-21 | 2018-12-27 | Universität des Saarlandes | Beschichtung oder mit einer Beschichtung versehener Körper sowie Verfahren zu deren Herstellung |
US11555473B2 (en) | 2018-05-29 | 2023-01-17 | Kontak LLC | Dual bladder fuel tank |
US11638331B2 (en) | 2018-05-29 | 2023-04-25 | Kontak LLC | Multi-frequency controllers for inductive heating and associated systems and methods |
CN112718430B (zh) * | 2020-12-22 | 2022-07-12 | 哈尔滨工程大学 | 船用铝合金表面纳米级梯度壳结构疏水涂层的制备方法 |
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DE19529241A1 (de) | 1995-08-09 | 1997-02-13 | Basf Ag | Aluminiumalkoxyhydride |
DE10032303A1 (de) | 2000-07-04 | 2002-01-17 | Basf Ag | Metallischse Hydrierkatalysatoren |
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EP1996753A1 (de) | 2008-12-03 |
US8197889B2 (en) | 2012-06-12 |
EP1996753B1 (de) | 2013-09-25 |
DE102006013484A1 (de) | 2007-09-27 |
JP2009533547A (ja) | 2009-09-17 |
US20090233349A1 (en) | 2009-09-17 |
WO2008011920A1 (de) | 2008-01-31 |
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