JP5195671B2 - シリコン単結晶の製造方法 - Google Patents
シリコン単結晶の製造方法 Download PDFInfo
- Publication number
- JP5195671B2 JP5195671B2 JP2009157032A JP2009157032A JP5195671B2 JP 5195671 B2 JP5195671 B2 JP 5195671B2 JP 2009157032 A JP2009157032 A JP 2009157032A JP 2009157032 A JP2009157032 A JP 2009157032A JP 5195671 B2 JP5195671 B2 JP 5195671B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- area
- single crystal
- pulling
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 157
- 229910052710 silicon Inorganic materials 0.000 title claims description 156
- 239000010703 silicon Substances 0.000 title claims description 156
- 239000013078 crystal Substances 0.000 title claims description 114
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 238000000034 method Methods 0.000 claims description 51
- 238000001020 plasma etching Methods 0.000 claims description 44
- 230000007547 defect Effects 0.000 claims description 31
- 238000005530 etching Methods 0.000 claims description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 101
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 30
- 239000001301 oxygen Substances 0.000 description 30
- 229910052760 oxygen Inorganic materials 0.000 description 30
- 239000002244 precipitate Substances 0.000 description 27
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 18
- 239000007789 gas Substances 0.000 description 16
- 238000009826 distribution Methods 0.000 description 15
- 229910004298 SiO 2 Inorganic materials 0.000 description 13
- 238000004140 cleaning Methods 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- 238000011156 evaluation Methods 0.000 description 10
- 239000000758 substrate Substances 0.000 description 9
- CGEORJKFOZSMEZ-MBZVMHRFSA-N (+)-sesamin monocatechol Chemical compound C1=C(O)C(O)=CC=C1[C@@H]1[C@@H](CO[C@@H]2C=3C=C4OCOC4=CC=3)[C@@H]2CO1 CGEORJKFOZSMEZ-MBZVMHRFSA-N 0.000 description 7
- 230000008859 change Effects 0.000 description 7
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 6
- 229910017604 nitric acid Inorganic materials 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 238000003776 cleavage reaction Methods 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 230000007017 scission Effects 0.000 description 3
- 238000004804 winding Methods 0.000 description 3
- 0 O=NC(C1)C2CC(C3)*CCC3C1=CC2 Chemical compound O=NC(C1)C2CC(C3)*CCC3C1=CC2 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 102000030938 small GTPase Human genes 0.000 description 2
- 108060007624 small GTPase Proteins 0.000 description 2
- 238000003325 tomography Methods 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 241000135309 Processus Species 0.000 description 1
- 235000018734 Sambucus australis Nutrition 0.000 description 1
- 244000180577 Sambucus australis Species 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
11 チャンバー
12 支持回転軸
13 グラファイトサセプタ
14 石英るつぼ
15 ヒーター
16 支持軸駆動機構
17 シードチャック
18 ワイヤー
19 ワイヤー巻き取り機構
20 シリコン単結晶インゴット
21 シリコン融液
22 熱遮蔽部材
23 制御装置
24 ガス導入口
25 ガス管
26 コンダクタンスバルブ
27 ガス排出口
28 排ガス管
29 コンダクタンスバルブ
30 真空ポンプ
31 磁場供給装置
40 シリコンウェーハ
41 COP領域
42 OSF領域
43 Pv領域
44 Pi領域
45 転位クラスタ
46 突起発生領域
50d 短冊
51 支持基板
Claims (2)
- チョクラルスキー法によってCOP及び転位クラスタを含まないシリコン単結晶インゴットを育成する育成工程と、
前記シリコン単結晶インゴットからシリコンウェーハを切り出す切り出し工程と、
as-grown状態の前記シリコンウェーハに対して反応性イオンエッチングを施すことにより、酸化シリコンを含むgrown-in欠陥をエッチング面上の突起として顕在化させるエッチング工程と、を備え、
前記エッチング工程にて顕在化された前記突起の発生領域に基づいて、後続の前記育成工程における育成条件を、前記エッチング工程にて前記突起が発生する領域の面積が前記シリコンウェーハの面積の10%以下となるよう調整すると共に、
前記エッチング工程にて顕在化された前記突起の発生領域が前記シリコンウェーハの面積の3%未満である場合には、後続の前記育成工程における前記シリコン単結晶インゴットの引き上げ速度を上昇させることを特徴とするシリコン単結晶の製造方法。 - 前記エッチング工程にて顕在化された前記突起の発生領域が前記シリコンウェーハの面積の3%以上である場合には、後続の前記育成工程における前記シリコン単結晶インゴットの引き上げ速度を低下させることを特徴とする請求項1に記載のシリコン単結晶の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009157032A JP5195671B2 (ja) | 2009-07-01 | 2009-07-01 | シリコン単結晶の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009157032A JP5195671B2 (ja) | 2009-07-01 | 2009-07-01 | シリコン単結晶の製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013002674A Division JP5668764B2 (ja) | 2013-01-10 | 2013-01-10 | シリコン単結晶の製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2011011939A JP2011011939A (ja) | 2011-01-20 |
JP2011011939A5 JP2011011939A5 (ja) | 2012-03-08 |
JP5195671B2 true JP5195671B2 (ja) | 2013-05-08 |
Family
ID=43591201
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009157032A Active JP5195671B2 (ja) | 2009-07-01 | 2009-07-01 | シリコン単結晶の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5195671B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013082622A (ja) * | 2013-01-10 | 2013-05-09 | Sumco Corp | シリコン単結晶の製造方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6981750B2 (ja) * | 2016-12-21 | 2021-12-17 | 株式会社Sumco | シリコン単結晶の製造方法およびシリコン単結晶 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3451955B2 (ja) * | 1998-08-13 | 2003-09-29 | 株式会社豊田中央研究所 | 結晶欠陥の評価方法及び結晶欠陥評価装置 |
JP4254584B2 (ja) * | 2004-03-15 | 2009-04-15 | 信越半導体株式会社 | 結晶欠陥の評価方法 |
JP5204415B2 (ja) * | 2006-03-03 | 2013-06-05 | 国立大学法人 新潟大学 | CZ法によるSi単結晶インゴットの製造方法 |
JP2008162832A (ja) * | 2006-12-27 | 2008-07-17 | Toyota Central R&D Labs Inc | ウェーハの検査方法とウェーハの検査装置 |
-
2009
- 2009-07-01 JP JP2009157032A patent/JP5195671B2/ja active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013082622A (ja) * | 2013-01-10 | 2013-05-09 | Sumco Corp | シリコン単結晶の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2011011939A (ja) | 2011-01-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101272659B1 (ko) | 실리콘 단결정의 제조 방법, 실리콘 단결정 잉곳 및 실리콘 웨이퍼 | |
EP1310583B1 (en) | Method for manufacturing of silicon single crystal wafer | |
KR101997561B1 (ko) | 실리콘 단결정봉의 제조방법 | |
JP5163459B2 (ja) | シリコン単結晶の育成方法及びシリコンウェーハの検査方法 | |
TWI266815B (en) | Method for growing silicon single crystal and method for manufacturing silicon wafer | |
JP2000053497A (ja) | 窒素ド―プした低欠陥シリコン単結晶ウエ―ハおよびその製造方法 | |
TWI486493B (zh) | 矽單結晶的檢查方法及製造方法 | |
WO2006103837A1 (ja) | シリコン単結晶の製造方法およびアニールウェーハおよびアニールウェーハの製造方法 | |
JPH0393700A (ja) | シリコン単結晶の熱処理方法および装置ならびに製造装置 | |
JP5381558B2 (ja) | シリコン単結晶の引上げ方法 | |
JP4192530B2 (ja) | パーティクルモニター用シリコン単結晶ウェーハの製造方法 | |
JP5195671B2 (ja) | シリコン単結晶の製造方法 | |
JP2010275147A (ja) | シリコンウェーハの結晶欠陥評価方法 | |
JP2002145697A (ja) | 単結晶シリコンウェーハ、インゴット及びその製造方法 | |
JP5668764B2 (ja) | シリコン単結晶の製造方法 | |
JP2001217251A (ja) | シリコンウェーハの熱処理方法 | |
JPH11322490A (ja) | シリコン単結晶ウエ―ハの製造方法およびシリコン単結晶ウエ―ハ | |
JP5141495B2 (ja) | シリコン単結晶の製造方法及びシリコンウェーハ | |
JP2010116271A (ja) | シリコン単結晶の育成方法及びシリコン単結晶インゴット | |
JP6493105B2 (ja) | エピタキシャルシリコンウェーハ | |
JP2001089294A (ja) | 点欠陥の凝集体が存在しないシリコン単結晶の連続引上げ法 | |
TW503463B (en) | Silicon wafer and manufacture method thereof | |
JP4510948B2 (ja) | シリコン単結晶ウェ―ハの製造方法 | |
JP3890861B2 (ja) | シリコン単結晶の引上げ方法 | |
JP2013220962A (ja) | シリコンウェーハの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120120 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120120 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120919 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120925 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121101 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130108 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130121 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160215 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 5195671 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |